G5110 Global Mixed-mode Technology Inc. 600k/1.2MHz TFT-LCD Step-Up DC-DC Converter Features General Description The G5110 boost converter incorporate high-performance, current-mode, and frequency selectable pulse width modulation (PWM) circuitry with a built-in N-channel MOSFET to provide a highly efficient regulator. 90% Efficiency Adjustable Output from VIN to 22V 4A, 0.125Ω, 22V Power MOSFET 2.5V to 5.5V Input Range 600kHz/1.2MHz Switching Frequency TDFN3X3-10 Package The G5110’s frequency can be selected by user to operate at either 600kHz or 1.2MHz. High switching frequency allows easily filtering and faster loop performance. An external compensation pin provides the user flexibility in determining loop dynamics, allowing the use of small, low ESR ceramic output capacitors. The current-mode architecture provides fast transient response to pulsed loads. Applications LCD Displays Portable Applications Hand-Held Devices The internal N-channel MOSFET can produce output voltage as high as 22V. User programmed soft-start with an external capacitor determines the input current ramp rate. The G5110 is available in a 10-pin TDFN3X3 package. Ordering Information ORDER NUMBER MARKING TEMP. RANGE PACKAGE (Green) G5110RE1U 5110 -40°C to 85°C TDFN3X3-10 Note :RE: TDFN3X3-10 1: Bonding Code U: Tape & Reel Pin Configuration Typical Application Circuit G5110 1 10 FB 2 9 3 GND 4 GND 5 Thermal Pad C3 6.3V 10µF R4 10Ω SS FREQ LX 6 LX G5110 IN C10 1µF 8 IN 7 D1 VOUT 4.5V to 5.5V COMP SHDN L1 3.6µH VIN FREQ SHDN TDFN3X3-10 SS Note: Recommend connecting the Thermal Pad to the Ground or let it keep floating. C12 33nF LX LX GND GND C4 4.7µF 25V C5 4.7µF 25V C6 4.7µF 25V R1 300kΩ FB COMP R3 100kΩ C8 330pF C9 10pF R2 27kΩ TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Sep 09, 2009 1