Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC625ALP5E v01.0314 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625ALP5E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection • WiBro / WiMAX / 4G High Output IP3: +33 dBm • Microwave Radio & VSAT TTL/CMOS Compatible Serial, Parallel, or latched Parallel Control • Test Equipment and Sensors • IF & RF Applications ±0.25 dB Typical Gain Step Error Single +5V Supply 32 Lead 5x5 mm SMT Package: 25 mm2 Functional Diagram General Description The HMC625ALP5E is a digitally controlled variable gain amplifier which operates from DC to 6 GHz, and can be programmed to provide anywhere from 13.5 dB attenuation, to 18 dB of gain, in 0.5 dB steps. The HMC625ALP5E delivers noise figure of 6 dB in its maximum gain state, with output IP3 of up to +33 dBm in any state. The dual mode control interface is CMOS/ TTL compatible, and accepts either a three wire serial input or a 6 bit parallel word. The HMC625ALP5E also features a user selectable power up state and a serial output port for cascading other Hittite serial controlled components. The HMC625ALP5E is housed in a RoHS compliant 5x5 mm QFN leadless package, and requires no external matching components. Electrical Specifications, TA = +25° C, 50 Ohm System, Vdd= +5V, Vs= +5V Parameter Gain (Maximum Gain State) Frequency Min. Typ. DC - 3.0 GHz 3.0 - 6.0 GHz 13 5 18 13 Gain Control Range Input Return Loss Units dB dB 31.5 dB 15 dB Output Return Loss DC - 6.0 GHz 13 dB Gain Accuracy: (Referenced to Maximum Gain State) All Gain States DC - 0.8 GHz 0.8 - 6.0 GHz ± (0.10 + 5% of Gain Setting) Max. ± (0.30 + 3% of Gain Setting) Max. dB dB Output Power for 1dB Compression DC - 3.0 GHz 3.0 - 6.0 GHz Output Third Order Intercept Point (Two-Tone Output Power= 0 dBm Each Tone, 1 MHz Spacing) Noise Figure Total Supply Current (Idd + Is) 1 DC - 6.0 GHz Max. 19 16 dBm dBm DC - 6.0 GHz 33 dBm 900 MHz 6 dB DC - 6.0 GHz 16 13 60 87.5 100 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC625ALP5E v01.0314 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Normalized Attenuation [2] Maximum Gain vs. Frequency (Only Major States are Shown) 25 NORMALIZED ATTENUATION (dB) 15 GAIN (dB) 10 [1] 5 0 -5 -10 +25 C +85 C -40 C -15 -20 -25 -5 -10 -15 -20 -25 -30 -35 0 1 2 3 4 5 6 0 0.5 1 FREQUENCY (GHz) 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) Input Return Loss [1] Output Return Loss [1] (Only Major States are Shown) (Only Major States are Shown) 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) IL STATE -10 -15 -20 -25 -30 -10 -15 -20 -25 -30 31.5 dB STATE -35 -35 -40 -40 0 1 2 3 4 5 6 0 1 FREQUENCY (GHz) 2 3 4 5 6 5 6 FREQUENCY (GHz) Input Return Loss [2] Output Return Loss [2] (Only Major States are Shown) (Only Major States are Shown) 0 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 0 [2] 20 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) IL STATE -10 -15 -20 -25 -30 -10 -15 -20 -25 -30 31.5 dB STATE -35 -35 -40 -40 0 1 2 3 4 5 6 FREQUENCY (GHz) 0 1 2 3 4 FREQUENCY (GHz) [1] Tested with broadband bias tee on RF ports and C1 = 10,000 pF [2] Tested with broadband bias tee on RF ports and C1 = 100 pF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC625ALP5E v01.0314 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Bit Error vs. Frequency [2] Bit Error vs. Attenuation State [2] 2 1 1.5 0.8 BIT ERROR (dB) BIT ERROR (dB) 500MHz, 1GHz, 2GHz 0.6 1 0.5 0 -0.5 -1 0.4 0.2 0 -0.2 100MHz, 3GHz, 4GHz -0.4 -0.6 -1.5 -0.8 -2 -1 0 1 2 3 4 5 6 0 4 8 FREQUENCY (GHz) 12 16 20 24 28 32 ATTENUATION STATE (dB) Normal Relative Phase vs. Frequency [2] (Only Major States are Shown) Step Error vs. Frequency [2] (Only Major States are Shown) 1 80 0.8 31.5 dB 60 0.6 16 dB STEP ERROR (dB) RELATIVE PHASE (deg) VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT (Only Major States are Shown) 40 8 dB 20 0 0.5 - 4 dB -20 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -40 -1 0 1 2 3 4 5 6 FREQUENCY (GHz) 0 1 2 3 4 5 6 FREQUENCY (GHz) Output IP3 vs. Attenuation Settings[2] (Only Major States are Shown) 40 OIP3 (dBm) 35 30 25 20 15 10 0 1 2 3 4 5 6 FREQUENCY (GHz) IL 0.5 dB 1 dB 2 dB 4 dB 8 dB 16 dB [1] Tested with broadband bias tee on RF ports and C1 = 10,000 pF [2] Tested with broadband bias tee on RF ports and C1 = 100 pF 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC625ALP5E v01.0314 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz The HMC625ALP5E contains a 3-wire SPI compatible digital interface (SERIN, CLK, LE). It is activated when P/S is kept high. The 6-bit serial word must be loaded MSB first. The positive-edge sensitive CLK and LE requires clean transitions. If mechanical switches were used, sufficient debouncing should be provided. When LE is high, 6-bit data in the serial input register is transferred to the attenuator. When LE is high CLK is masked to prevent data transition during output loading. When P/S is low, 3-wire SPI interface inputs (SERIN, CLK, LE) are disabled and serial input register is loaded asynchronously with parallel digital inputs (D0-D5). When LE is high, 6-bit parallel data is transferred to the attenuator. For all modes of operations, the DVGA state will stay constant while LE is kept low. Parameter Typ. Min. serial period, tSCK 100 ns Control set-up time, tCS 20 ns Control hold-time, tCH 20 ns LE setup-time, tLN 10 ns Min. LE pulse width, tLEW 10 ns Min LE pulse spacing, tLES 630 ns Serial clock hold-time from LE, tCKN 10 ns Hold Time tPH 0 ns Latch Enable Minimum width, tLEN 10 ns Setup Time, tPS 2 ns Timing Diagram (Latched Parallel Mode) VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT Serial Control Interface Parallel Mode (Direct Parallel Mode & Latched Parallel Mode) Note: The parallel mode is enabled when P/S is set to low. Direct Parallel Mode - The attenuation state is changed by the Control Voltage Inputs directly. The LE (Latch Enable) must be at a logic high to control the attenuator in this manner. Latched Parallel Mode - The attenuation state is selected using the Control Voltage Inputs and set while the LE is in the Low state. The attenuator will not change state while LE is Low. Once all Control Voltage Inputs are at the desired states the LE is pulsed. See timing diagram above for reference. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC625ALP5E v01.0314 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz PUP Truth Table VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT Power-Up States If LE is set to logic LOW at power-up, the logic state of PUP1 and PUP2 determines the power-up state of the part per PUP truth table. If the LE is set to logic HIGH at power-up, the logic state of D0-D5 determines the power-up state of the part per truth table. The DVGA latches in the desired power-up state approximately 200 ms after power-up. Power-On Sequence The ideal power-up sequence is: GND, Vdd, digital inputs, RF inputs. The relative order of the digital inputs are not important as long as they are powered after Vdd / GND RF Input Power [1] 11.5 dBm (T = +85 °C) Digital Inputs (Reset, Shift Clock, Latch Enable & Serial Input) -0.5 to Vdd +0.5V Bias Voltage (Vdd) 5.6V Collector Bias Voltage (Vcc) 5.5V Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 8.4 mW/°C above 85 °C) [2] 0.546 W Thermal Resistance Storage Temperature 119 °C/W -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A [1] The maximum RF input power increases by the same amount the gain is reduced. The maximum input power at any state is no more than 28 dBm. [2] This value is the total power dissipation in the amplifier. [3] This is the thermal resistance for the amplifier. Bias Voltage 5 PUP1 PUP2 Gain Relative to Maximum Gain 0 0 0 -31.5 0 1 0 -24 0 0 1 -16 0 1 1 Insertion Loss 1 X X 0 to -31.5 dB Note: The logic state of D0 - D5 determines the power-up state per truth table shown below when LE is high at power-up. Truth Table Absolute Maximum Ratings [3] LE Vdd (V) Idd (Typ.) (mA) 5V 2.5 Vs (V) Is (Typ.) (mA) 5V 85 Control Voltage Input Gain Relative to Maximum Gain D5 D4 D3 D2 D1 D0 High High High High High High 0 dB High High High High High Low -0.5 dB High High High High Low High -1 dB High High High Low High High -2 dB High High Low High High High -4 dB High Low High High High High -8 dB Low High High High High High -16 dB Low Low Low Low Low Low -31.5 dB Any combination of the above states will provide a reduction in gain approximately equal to the sum of the bits selected. Control Voltage Table State Vdd = +3V Vdd = +5V Low 0 to 0.5V @ <1 µA 0 to 0.8V @ <1 µA High 2 to 3V @ <1 µA 2 to 5V @ <1 µA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC625ALP5E v01.0314 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC625ALP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [1] Package Marking [2] H625A XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX Pin Descriptions Pin Number Function Description 1 AMPIN This pin is DC coupled. An off chip DC blocking capacitor is required. 29 AMPOUT RF output and DC bias (Vcc) for the output stage of the amplifier. 2, 3, 13, 28, 30 - 32 GND These pins and package bottom must be connected to RF/DC ground. 4, 12 ATTIN, ATTOUT These pins are DC coupled and matched to 50 Ohms. Blocking capacitors are required. Select value based on lowest frequency of operation. 5 - 10 ACG1 - ACG6 External capacitors to ground is required. Select value for lowest frequency of operation. Place capacitor as close to pins as possible. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT Outline Drawing 6 HMC625ALP5E v01.0314 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Pin Descriptions VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT Pin Number 7 Function Description 11 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 14 SEROUT Serial input data delayed by 6 clock cycles. 15, 16 PUP2, PUP1 18 - 23 D5, D4, D3, D2, D1, D0 24 P/S 25 CLK 26 SERIN 27 LE 17 Vdd Interface Schematic Supply Voltage Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC625ALP5E v01.0314 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz U1 List of Materials for Evaluation PCB 116960 - HMC625ALP5 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 18 Pin DC Connector J4 - J6 DC Pin C1 - C9 100 pF Capacitor, 0402 Pkg. C11 - C12 1000 pF Capacitor, 0402 Pkg. C14 2.2 µF Capacitor, CASE A Pkg. R1 - R14 100 kOhm Resistor, 0402 Pkg. R15 1.8 Ohm Resistor, 1206 Pkg. SW1, SW2 SPDT 4 Position DIP Switch L1 24 nH Inductor, 0603 Pkg. U1 HMC625ALP5E Variable Gain Amplifier PCB [2] 116958 Evaluation PCB VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8