R BZX55-B2V0 THRU BZX55-B200 0.5W SILICON PLANAR ZENER DIODES S E M I C O N D U C T O R DO-35 FEATURES JF The zener voltage are graded according to the international E24 1.083(27.5) MIN standard. Other voltage tolerance and higher zener voltages are on request 0.079(2.0) MAX DIA High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 0.150(3.8) MAX MECHANICAL DATA Case: DO-35 glass case 1.083(27.5) MIN Polarity: Color band denotes cathode end 0.020(0.52) MAX DIA Weight: Approx. 0.13 gram Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C) Symbols Value Units 500 1) mW Zener current see table "Characteristics" Ptot TJ TSTG Power dissipation Junction temperature Storage temperature range 175 C C -65 to+175 1) Valid provided that a distance of 8mm from case is kept at ambient temperature ELECTRICAL CHARACTERISTICS (TA=25 C) Symbols Thermal resistance junction to ambient Forward voltage at IF=100mA Min R JA VF Typ Max 3001) 1.0 Units K/W V 1) Valid provided that a distance of 8mm from case is kept at ambient temperature JINAN JINGHENG ELECTRONICS CO., LTD. 10-6 HTTP://WWW.JINGHENGGROUP.COM BZX55... SILICON PLANAR ZENER DIODES Zener Voltage range 1) Dynamic resistance Reverse leakage current Type BZX55/B2V0 BZX55/B2V2 BZX55/B2V4 BZX55/B2V7 BZX55/B3V0 BZX55/B3V3 BZX55/B3V6 BZX55/B3V9 BZX55/B4V3 BZX55/B4V7 BZX55/B5V1 BZX55/B5V6 BZX55/B6V2 BZX55/B6V8 BZX55/B7V5 BZX55/B8V2 BZX55/B9V1 BZX55/B10 BZX55/B11 BZX55/B12 BZX55/B13 BZX55/B15 BZX55/B16 BZX55/B18 BZX55/B20 BZX55/B22 BZX55/B24 BZX55/B27 BZX55/B30 BZX55/B33 BZX55/B36 BZX55/B39 BZX55/B43 BZX55/B47 BZX55/B51 BZX55/B56 BZX55/B62 BZX55/B68 BZX55/B75 BZX55/B82 BZX55/B91 BZX55/B100 BZX55/B110 BZX55/B120 BZX55/B130 BZX55/B150 BZX55/B160 BZX55/B180 BZX55/B200 rZjt and rZjK at IZK IZT for VZT VZNOM V mA V 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 1 1 1 1 1 1 1 1 1 1.96…2.04 2.15…2.25 2.35…2.45 2.64…2.76 2.94…3.06 3.23…3.37 3.52…3.68 3.82…3.98 4.21…4.39 4.6…4.8 4.99…5.2 5.49…5.71 6.07…6.32 6.66…6.94 7.35…7.65 8.04…8.36 8.92…9.28 9.8…10.2 10.8…11.2 11.8…12.2 12.7…13.3 14.7…15.3 15.7…16.3 17.6…18.4 19.6…20.4 21.6…22.5 23.5…24.5 26.4…27.6 29.4…30.6 32.3…33.7 35.2…36.8 38.2…39.8 42.1…43.9 46…48 49.9…52.1 54.8…57.2 60.7…63.3 66.6…69.4 73.5…76.5 80.3…83.7 89.1…92.9 98…102 107.8…112.2 117.6…122.4 127.4…132.6 147…153 156.8…163.2 176.4…183.6 196…204 < 85 < 85 < 85 < 85 < 85 < 85 < 85 < 85 < 75 < 60 < 35 < 25 < 10 <8 <7 <7 < 10 < 15 < 20 < 20 < 26 < 30 < 40 < 50 < 55 < 55 < 80 < 80 < 80 < 80 < 80 < 90 < 90 < 110 < 125 < 135 < 150 < 200 < 250 < 300 < 450 < 450 < 600 < 800 < 950 < 1250 < 1400 < 1700 < 2000 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 550 < 450 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 220 < 220 < 220 < 220 < 500 < 500 < 600 < 700 < 700 < 1000 < 1000 < 1000 < 1500 < 2000 < 5000 < 5000 < 5500 < 6000 < 6500 < 7000 < 8500 < 10000 Temp Coefficient of zener voltage IR and IR at VR TKVZ mA A A V %/K 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 < 200 < 160 < 100 < 50 < 40 < 40 < 40 < 40 < 20 < 10 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <5 <5 <5 < 10 < 10 < 10 < 10 < 10 < 10 < 10 < 10 < 10 < 10 < 10 < 10 < 10 < 10 < 10 1 1 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.06...-0.03 -0.05...+0.02 -0.02…+0.02 -0.05…+0.05 0.03…0.06 0.03…0.07 0.03…0.07 0.03…0.08 0.03…0.09 0.03…0.1 0.03…0.11 0.03…0.11 0.03…0.11 0.03…0.11 0.03…0.11 0.03…0.11 0.03…0.11 0.04…0.12 0.04…0.12 0.04…0.12 0.04…0.12 0.04…0.12 0.04…0.12 0.04…0.12 0.04…0.12 0.04…0.12 0.04…0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.04...0.12 0.05...0.12 0.05...0.12 0.05...0.12 0.05...0.12 0.05...0.12 0.05...0.12 0.05...0.12 0.05...0.12 0.05...0.12 0.05...0.12 1) Teated with pulses tp=20ms. JINAN JINGHENG ELECTRONICS CO., LTD. 10-7 HTTP://WWW.JINGHENGGROUP.COM BZX55... SILICON PLANAR ZENER DIODES BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED) BZX55... mA 50 B2V7 B0V8 40 B3V9 B3V3 B5V6 B4V7 B8V2 B6V8 IZ 30 TJ=25 C 20 Test current IZ 5mA 10 0 0 1 2 3 4 5 6 7 8 9 10 V VZ BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED) BZX55... mA 30 TJ=25 C B10 B12 B15 IZ 20 B18 B22 B27 B33 Test current IZ 10 5mA 0 0 10 20 30 40 V VZ JINAN JINGHENG ELECTRONICS CO., LTD. 10-8 HTTP://WWW.JINGHENGGROUP.COM