Product Discontinued - Not for New Designs EnerChip™ CC CBC3112 EnerChip CC with Integrated Power Management Features • • • • • • • • • • • Power Manager with Charge Control Integrated 12µAh Thin Film Energy Storage Built-in Energy Storage Protection Temperature Compensated Charge Control Adjustable Switchover Voltage Charges Integrated EnerChip Over a Wide Supply Range Low Standby Power SMT - Solder Reflow Tolerant Thousands of Recharge Cycles Low Self-Discharge Eco-Friendly, RoHS Compliant Applications • Standby supply for non-volatile SRAM, Real-time clocks, controllers, supply supervisors, and other system-critical components. • Wireless sensors and RFID tags and other powered, low duty cycle applications. • Localized power source to keep microcontrollers and other devices alert in standby mode. • Power bridging to provide back-up power to system during exchange of main batteries. • Consumer appliances that have real-time clocks; provides switchover power from main supply to backup battery. • Business and industrial systems such as: network routers, point-of-sale terminals, singleboard computers, test equipment, multi-function printers, industrial controllers, and utility meters. • Energy Harvesting by coupling the EnerChip with energy transducers such as solar panels. 7 mm x 7 mm DFN SMT Package: The EnerChip CC is the world’s first Intelligent Thin Film Energy Storage Device. It is an integrated solution that provides backup energy storage and power management for systems requiring power bridging and/or secondary power. A single EnerChip CC can charge up to 10 additional EnerChips connected in parallel. During normal operation, the EnerChip CC charges itself with a controlled voltage using an internal charge pump that operates from 2.5V to 5.5V. An ENABLE pin allows for activation and deactivation of the charge pump using an external control line in order to minimize current consumption and take advantage of the fast recharge time of the EnerChip. When the primary power supply dips below a userdefined threshold voltage, the EnerChip CC will signal this event and route the EnerChip voltage to VOUT. The EnerChip CC also has energy storage protection circuitry to enable thousands of recharge cycles. The CBC3112 is a 20-pin, 7 mm x 7 mm Dual Flat Nolead (DFN) package, available in tubes, trays, or tapeand-reel for use with automatic insertion equipment. Figure 1 - Typical EnerChip CC Application Circuit ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 1 of 16 EnerChip CC CBC3112 Electrical Properties EnerChip Backup Output voltage: Energy Capacity (typical): Recharge time to 80%: Charge/Discharge cycles: Physical Properties Package size: Operating temperature: Storage temperature: 3.3V 12µAh 10 minutes >5000 to 10% discharge 7 mm x 7 mm -20°C to +70°C -40°C to +125°C (prior to 1st charge) Functional Block Diagram The EnerChip CC internal schematic is shown in Figure 2. The input voltage from the power supply (VDD) is applied to the charge pump, the control logic, and is compared to the user-set threshold as determined by the voltage on VMODE. VMODE is an analog input ranging from 0V to VDD. The ENABLE pin is a digital input that turns off the charge pump when low. VOUT is either supplied from VDD or the integrated EnerChip. RESET is a digital output that, when low, indicates VOUT is being sourced by the integrated EnerChip. CFLY is the flying capacitor in the voltage doubler circuit. The value of CFLY can be changed if the output impedance of the EnerChip CC needs to be modified. The output impedance is dictated by 1/fC, where f is the frequency of oscillation (typically 100kHz) and C is the capacitor value (typically 0.1µF). GND is system ground. Figure 2: EnerChip CC CBC3112 Internal Block Diagram ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 2 of 16 EnerChip CC CBC3112 Device Input/Ouput Descriptions Pin Number(s) Label Description 1 2 VBAT VOUT Positive EnerChip Terminal - Tie to Pin 4 System Voltage 3 VDD Input Voltage 4 VCHG 5 6 ENABLE VMODE EnerChip Charge Voltage - Tie to Pin 1 and/or Optional EnerChip(s) Charge Pump Enable 7 8 9 GND RESET CP 10 CN 11 12 13 14 NC NC NC GND Mode Select for Backup Switchover Threshold System Ground Reset Signal (Active Low) Flying Capacitor Positive Flying Capacitor Negative No Connection No Connection No Connection System Ground 15 NC No Connection 16 17 18 NC NC NC No Connection No Connection No Connection 19 20 NC NC No Connection No Connection NC NC NC VCHG NC ENABLE NC NC GND RESET NC CP NC CN NC Figure 3: EnerChip CC CBC3112 Package Pin-out ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 3 of 16 EnerChip CC CBC3112 Absolute Maximum Ratings PARAMETER CONDITION MIN TYPICAL MAX UNITS VDD with respect to GND 25°C GND - 0.3 - 6.0 V ENABLE and VMODE Input Voltage 25°C GND - 0.3 - VDD+0.3 V VBAT 25°C 3.0 - 4.15 V 25°C 3.0 - 4.15 V GND - 0.3 GND - 0.3 - 6.0 V RESET Output Voltage 25°C 25°C - VOUT+0.3 V CP, Flying Capacitor Voltage 25°C GND - 0.3 - 6.0 V CN 25°C GND - 0.3 - VDD+0.3 V (1) VCHG (1) VOUT (1) No external connections to these pins are allowed, except parallel EnerChips. Operating Characteristics PARAMETER Output Voltage VOUT CONDITION MIN TYPICAL MAX UNITS VDD > VTH - VDD - V Output Voltage VOUT (backup mode) VDD < VTH EnerChip Pulse Discharge Current - Self-Discharge (5-yr. average; 25°C) 2.2 3.3 3.6 Variable - see App. Note 1025 V - Non-recoverable - 2.5 - % per year Recoverable - 1.5 - % per year Operating Temperature - 25 +70 °C Storage Temperature - -40 - +125 (3) °C Charge cycle 2 - 2.15 5.35 Charge cycle 1000 - 10.7 21.3 Cell Resistance (25°C) Recharge Cycles (to 80% of rated capacity; 4.1V charge voltage) 25°C 40°C Recharge Time (to 80% of rated capacity; 4.1V charge; 25°C) Capacity -40 (1) (2) kΩ 10% depth-of-discharge 5000 - - cycles 50% depth-of discharge 1000 - - cycles 10% depth-of-discharge 2500 - - cycles 50% depth-of-discharge 500 - - cycles Charge cycle 2 - 10 22 Charge cycle 1000 - 45 70 50µA discharge; 25°C 12 - - (1) First month recoverable self-discharge is 4% average. (2) Cell resistance and charging time increase with decreasing temperature. (3) Storage temperature is for EnerChip CC device before 1st charge is applied. minutes µAh Note: All specifications contained within this document are subject to change without notice. ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 4 of 16 EnerChip CC CBC3112 EnerChip Charging Characteristics The EnerChip can be recharged quickly. The following graphs illustrate the correlation between charging time and charging current into a discharged cell, and also the cumulative charge vs. charging time. Both graphs are typical based on constant 4.1V charging at room temperature. Charging time increases at lower temperature. EnerChip Charging Profile CBC3112 120 4.5 4 3.5 80 3 60 Current (µA) 2.5 Voltage (V) 2 40 1.5 Voltage (V) Current (µA) 100 1 20 0.5 0 0 20 40 60 80 100 120 140 160 0 Charge Time (minutes) Charge Capacity vs. Time CBC3112 18 16 Charge Capacity (µAh) 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 Charge Time (minutes) EnerChip Temperature Characteristics EnerChip cell resistance increases (decreases) with decreasing (increasing) temperature. The following graph represents typical cell resistance over the rated operating temperature range. EnerChip Cell Resistance CBC012 Cell Resistance (Ω) 100000 10000 1000 100 -40 -20 0 20 40 60 80 100 Temperature (°C) ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 5 of 16 EnerChip CC CBC3112 POWER SUPPLY CURRENT CHARACTERISTICS Ta = -20ºC to +70ºC CHARACTERISTIC SYMBOL CONDITION ENABLE=GND Quiescent Current IQ ENABLE=VDD MIN MAX UNITS VDD=3.3V - 3.5 µA VDD=5.5V - 6.0 µA VDD=3.3V VDD=5.5V - 35 µA - 38 µA IQBATOFF VBAT < VBATCO, VOUT=0 - 0.5 nA IQBATON VBAT > VBATCO, ENABLE=VDD, IOUT=0 - 42 nA EnerChip Cutoff Current INTERFACE LOGIC SIGNAL CHARACTERISTICS VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC CHARACTERISTIC SYMBOL CONDITION MIN High Level Input Voltage Low Level Input Voltage VIH VIL - High Level Output Voltage VOH VDD>VTH (see Figures 4 and 5) IL=10µA Low Level Output Voltage VOL Logic Input Leakage Current IIN (1) MAX UNITS VDD - 0.5 - Volts - 0.5 Volts VDD 0.04V (1) - Volts IL = -100µA - 0.3 Volts 0<VIN<VDD -1.0 +1.0 nA RESET tracks VDD; RESET = VDD - (IOUT x ROUT). RESET SIGNAL AC/DC CHARACTERISTICS VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC CHARACTERISTIC VDD Rising to RESET Rising VDD Falling to RESET Falling Mode 1 TRIP V VDD Rising Mode 2 TRIP V (2) VDD Rising RESET Hysteresis Voltage (3) (VDD to RESET) SYMBOL CONDITION MIN MAX UNITS tRESETH VDD rising from 2.8V TO 3.1V in <10µs 60 200 ms tRESETL VDD falling from 3.1V to 2.8V in <100ns 0.5 2 µs VRESET VMODE = GND 2.80 3.20 V VRESET VMODE = VDD/2 2.25 2.60 V VMODE=VDD 60 100 VMODE=GND 45 75 VMODE = VDD/2 30 50 VHYST mV (2) User-selectable trip voltage can be set by placing a resistor divider from the VMODE pin to GND. Refer to Figure 8. (3) The hysteresis is a function of trip level in Mode 2. Refer to Figure 9. ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 6 of 16 EnerChip CC CBC3112 CHARGE PUMP CHARACTERISTICS VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC CHARACTERISTIC ENABLE=VDD to Charge Pump Active ENABLE Falling to Charge Pump Inactive SYMBOL tCPON CONDITION MIN MAX UNITS 60 80 µs 0 1 µs - 120 KHz (1) 150 300 Ω ENABLE to 3rd charge pump pulse, VDD=3.3V tCPOFF - Charge Pump Frequency fCP Charge Pump Resistance RCP Delta VBAT, for IBAT charging current of 1µA to 100µA CFLY=0.1µF, CBAT=1.0µF VCHG Output Voltage VCP CFLY=0.1µF, CBAT=1.0µF, IOUT=1µA, Temp=+25ºC 4.075 4.125 V VCHG Temp. Coefficient TCCP IOUT=1µA, Temp=+25ºC -2.0 -2.4 mV/ºC Charge Pump Current Drive ICP IBAT=1mA CFLY=0.1µF, CBAT=1.0µF 1.0 - mA ENABLE=VDD 2.5 - V Charge Pump on Voltage (1) VENABLE fCP = 1/tCPPER ADDITIONAL CHARACTERISTICS Ta = -20ºC to +70ºC CHARACTERISTIC VBAT Cutoff Threshold SYMBOL VBATCO CONDITION IOUT=1µA LIMITS UNITS MIN MAX 2.75 3.25 V +1 +2 mV/ºC - Cutoff Temp. Coefficient TCCO VBAT Cutoff Delay Time tCOOFF VBAT from 40mV above to 20mV below VBATCO IOUT=1µA 18 - ms tRSBR IOUT=1mA VBAT=4.1V 0.2 2.0 µs tRSBF VBAT=4.1V 0.2 2.0 µs - 2.5 Ω VOUT Dead Time, VDD Rising (2) VOUT Dead Time, VDD Falling (2) Bypass Resistance (2) ROUT - Dead time is the time period when the VOUT pin is floating. Size the holding capacitor accordingly. Note: All specifications contained within this document are subject to change without notice ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 7 of 16 EnerChip CC CBC3112 Important timing diagrams for the EnerChip CC relationship between EnerChip Switchover Timing and EnerChip Disconnect from Load Timing are shown in Figure 4. Figure 4: EnerChip CC Switchover and Disconnect Timing Diagrams ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 8 of 16 EnerChip CC CBC3112 Timing diagrams for the EnerChip CC relationship between VDD to RESET and ENABLE high to charge pump becoming active are shown in Figure 5. Figure 5: Timing Diagrams for VDD to RESET and Enable to Charge Pump Active. ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 9 of 16 EnerChip CC CBC3112 EnerChip CC Detailed Description The EnerChip CC uses a charge pump to generate the supply voltage for charging the integrated energy storage device. An internal FET switch with low RDSON is used to route VDD to VOUT during normal operation when main power is above the switchover threshold voltage. When VDD is below the switchover threshold voltage, the FET switch is shut off and VOUT is supplied by the EnerChip. An interrupt signal is asserted low prior to the switchover. Operating Modes The EnerChip CC can be operated from various power supplies such as a primary source or a non-rechargeable battery. With the ENABLE pin asserted high, the charge pump is active and charges the integrated EnerChip. The EnerChip CC will be 80% charged within 10 minutes. Due to the rapid recharge it is recommended that, once the EnerChip CC is fully charged, the user de-assert the ENABLE pin (i.e., force low) to reduce power consumption. A signal generated from the MCU could be used to enable and disable the EnerChip CC. When controlling the ENABLE pin by way of an external controller - as opposed to fixing the ENABLE line to VDD - ensure that the ENABLE pin is forced low by the controller anytime the RESET line is low, which occurs when the switchover threshold voltage is reached and the device is placed in backup mode. Although the internal charge pump is designed to operate below the threshold switchover level when the ENABLE line is active, it is recommended that the ENABLE pin be forced low whenever RESET is low to ensure no parasitic loads are placed on the EnerChip while in this mode. If ENABLE is high or floating while VDD is in an indeterminate state, bias currents within the EnerChip CC could flow, placing a parasitic load on the EnerChip that could dramatically reduce the effective backup operating time. The EnerChip CC supports 2 operational modes as shown in Figures 6 and 7. ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 10 of 16 EnerChip CC CBC3112 Mode 1 Operation For use in 3.3 volt systems. The VMODE pin should be tied directly to GND, as shown in Figure 6. This will set the switchover threshold at approximately 3.0 volts. Figure 6: CBC3112 Typical Circuit for Mode 1 Operation Mode 2 Operation Figure 7 shows the circuitry for user-selectable switchover threshold to a value between 2.5 and 5.0 volts. Use Figure 8 to determine the value of R1. To determine the amount of hysteresis from the EnerChip switchover threshold, use Figure 9. Figure 7: CBC3112 Typical Circuit for Mode 2 Operation ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 11 of 16 EnerChip CC CBC3112 EnerChip charging and backup power switchover threshold for 2.5 to 5.5 volt operation is selected by changing the value of R2 (see Figure 7). To determine the backup switchover point, set the value of R1 to 200kΩ and choose the value of R2 according to Figure 8. For example, to set a 3.0V trip point: If R1=200 kΩ then R2 = R1 x 0.72 = 144kΩ. Figure 7 shows a Mode 2 circuit with standard value resistors of 200kΩ and 143kΩ. Battery Switchover Threshold Voltage vs. R2/R1 Ratio Switchover Threshold Voltage (Volts) 6 5 4 3 Trip point 2 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 R2/R1 Ratio Figure 8: Mode 2 Resistor Selection Graph To determine the backup switchover hysteresis for Mode 2 operation, use Figure 9. Hysteresis in Battery Switchover Threshold Voltage vs. R2/R1 Ratio 0.09 0.08 Hysteresis (Volts) 0.07 0.06 0.05 Hysteresis 0.04 0.03 0.02 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 R2/R1 Ratio Figure 9: Mode 2 Hysteresis as a Function of R2/R1 ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 12 of 16 EnerChip CC CBC3112 Real-Time Clock Application Circuit The EnerChip CC as depicted in Figure 10 is a typical application circuit in a 3.3 volt system where backup and power switchover circuitry for a real-time clock device is provided. Figure 10: EnerChip CC Providing Real-Time Clock Backup Power Adding Power and Energy Capacity with Parallel EnerChips In some applications, additional EnerChip capacity might be needed. The schematic in Figure 11 shows how multiple EnerChips can be supported in parallel by a single EnerChip CC CBC3112. Note that CFLY should be increased by 0.1µF for every additional EnerChip. Figure 11: EnerChip CC Providing Power Management for Multiple EnerChips ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 13 of 16 EnerChip CC CBC3112 EnerChip CC CBC3112 PCB Layout Guidelines - Important Notice! There are several PCB layout considerations that must be taken into account when using the CBC3112: 1. All capacitors should be placed as close as possible to the EnerChip CC. The flying capacitor connections must be as short as possible and routed on the same layer the EnerChip CC is placed. 2. Power connections should be routed on the layer the EnerChip CC is placed. 3. A ground (GND) plane in the PCB should be used for optimal performance of the EnerChip CC. 4. Very low parasitic leakage currents from the VBAT pin to power, signal, and ground connections, can result in unexpected drain of charge from the integrated power source. Maintain sufficient spacing of traces and vias from the VBAT pin and any traces connected to the VBAT pin in order to eliminate parasitic leakage currents that can arise from solder flux or contaminants on the PCB. 5. Pin 1 VBAT and Pin 4 VCHG must be tied together for proper operation. 6. There should be no traces, vias or connections under the CBC3112 exposed die pad. 7. When placing a silk screen on the PCB around the perimeter of the package, place the silk screen outside of the package and all metal pads. Failure to observe this precaution can result in package cracking during solder reflow due to the silk screen material interfering with the solder solidification process during cooling. 8. See Figure 12 for location and dimensions of metal pad placement on the PCB. Important Note: Designers using EnerChips in their products should also download the EnerChip User Manual Application Note AN-1026 found here: http://www.cymbet.com/products/datasheets-downloads.php. Figure 12: Recommend PCB Layout for the CBC3112-D7C Package (Dimensions in mm) Cymbet Logo Lot Number Part Number Date Code CBC3112 Labeling Information Placement ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 14 of 16 EnerChip CC CBC3112 CBC3112 7mm x 7mm DFN Package Drawing and Dimensions Notes: 1. Dimensions in millimeters. 2. Package dimensions do not include mold flash, protrusions, burrs or metal smearing. 3. Coplanarity applies to the exposed pad as well as the exposed terminals. Maximum coplanarity shall be 0.08. Warpage shall not exceed 0.10. 4. Refer to JEDEC MO-229 outline. 5. Exposed metallized feature connected to die paddle. 6. There are 10 contact pads on two opposite sides and no contact pads on the other two sides. Handling EnerChips as MSL 3 Devices EnerChip CBC050 devices are rated Moisture Sensitivity Level 3 and must be mounted and reflowed within 168 hours of being removed from the moisture barrier antistatic bag. Soldering, Rework, and Electrical Test Refer to the Cymbet User Manual AN-1026 for soldering, rework, and replacement of the EnerChip on printed circuit boards, and for instructions on in-circuit electrical testing of the EnerChip. ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 15 of 16 EnerChip CC CBC3112 Energy Harvesting with the EnerChip CC The EnerChip CC can be configured to collect energy from transducers such as low power photovoltaic (PV) cells and use that harvested energy to charge the integrated EnerChip and deliver self-sustaining power to components such as microcontrollers, sensors, and radios in wireless systems. The schematic of Figure 13 illustrates the feedback connection made from RESET to EN to implement the energy harvesting function with the CBC3150. In order to make most efficient use of the power available from the transducer (for example, a PV cell), it is necessary to know the electrical characteristics including voltage and peak power point of the transducer being used. For assistance in designing your system to effectively harvest energy from a power transducer in a specific environment, contact Cymbet Applications Engineering. Figure 13: Implementing Energy Harvesting with the EnerChip CC Ordering Information - available for Last Time Buy until September 12, 2014 EnerChip CC Part Number CBC3112-D7C CBC3112-D7C-TR1 CBC3112-D7C-TR5 CBC3112-D7C-WP Description EnerChip CC 12µAh in 20-pin D7 DFN Package EnerChip CC 12µAh in 20-pin D7 DFN Package EnerChip CC 12µAh in 20-pin D7 DFN Package Notes Shipped in Tube Tape-and-Reel - 1000 pcs (TR1) or 5000 pcs (TR5) per reel Waffle Pack U.S. Patent No. 8,044,508. Additional U.S. and Foreign Patents Pending Disclaimer of Warranties; As Is The information provided in this data sheet is provided “As Is” and Cymbet Corporation disclaims all representations or warranties of any kind, express or implied, relating to this data sheet and the Cymbet EnerChip product described herein, including without limitation, the implied warranties of merchantability, fitness for a particular purpose, non-infringement, title, or any warranties arising out of course of dealing, course of performance, or usage of trade. Cymbet EnerChip products are not authorized for use in life critical applications. Users shall confirm suitability of the Cymbet EnerChip product in any products or applications in which the Cymbet EnerChip product is adopted for use and are solely responsible for all legal, regulatory, and safety-related requirements concerning their products and applications and any use of the Cymbet EnerChip product described herein in any such product or applications. Cymbet, the Cymbet Logo, and EnerChip are Cymbet Corporation Trademarks ©2009-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com DS-72-04 Rev H Page 16 of 16