IS25LP256 IS25WP256 256MBIT SERIAL FLASH MEMORY WITH 166MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE ADVANCED DATA SHEET IS25LP256, IS25WP256 256MBIT SERIAL FLASH MEMORY WITH 166MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE ADVANCED INFORMATION FEATURES • Industry Standard Serial Interface - IS25LP256: 256Mbit/32Mbyte - IS25WP256: 256Mbit/32Mbyte - 3 or 4 Byte Addressing Mode - Supports Standard SPI, Fast, Dual, Dual I/O, Quad, Quad I/O, SPI DTR, Dual I/O DTR, Quad I/O DTR, and QPI - Software & Hardware Reset - Supports Serial Flash Discoverable Parameters (SFDP) • High Performance Serial Flash (SPI) - 80MHz Normal Read - Up to166Mhz Fast Read - Up to 80MHz DTR (Dual Transfer Rate) - Equivalent Throughput of 664 Mb/s - Selectable Dummy Cycles - Configurable Drive Strength - Supports SPI Modes 0 and 3 - More than 100,000 Erase/Program Cycles - More than 20-year Data Retention • Flexible & Efficient Memory Architecture - Chip Erase with Uniform Sector/Block Erase (4/32/64 Kbyte) - Program 1 to 256 Byte per Page - Program/Erase Suspend & Resume • Efficient Read and Program modes - Low Instruction Overhead Operations - Continuous Read 8/16/32/64 Byte Burst - Selectable Burst Length - QPI for Reduced Instruction Overhead - AutoBoot Operation Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 • Low Power with Wide Temp. Ranges - Single Voltage Supply IS25LP: 2.30V to 3.60V IS25WP: 1.65V to 1.95V - 10 mA Active Read Current - 8 µA Standby Current - 1 µA Deep Power Down - Temp Grades: Extended: -40°C to +105°C Extended+: -40°C to +125°C Auto Grade: up to +125°C Note: Extended+ should not be used for Automotive. • Advanced Security Protection - Software and Hardware Write Protection - Advanced Sector/Block Protection - Top/Bottom Block protection - Power Supply Lock Protection - 4x256 Byte Dedicated Security Area with OTP User-lockable Bits - 128 bit Unique ID for Each Device (Call Factory) • Industry Standard Pin-out & Packages - M =16-pin SOIC 300mil - L = 8-contact WSON 8x6mm - G = 24-ball TFBGA 6x8mm (4x6 ball array)(1) - H = 24-ball TFBGA 6x8mm (5x5 ball array)(1) - KGD (Call Factory) Note: For the additional RESET# pin option, call Factory 2 IS25LP256, IS25WP256 GENERAL DESCRIPTION The IS25LP256 and IS25WP256 Serial Flash memory offers a versatile storage solution with high flexibility and performance in a simplified pin count package. ISSI’s “Industry Standard Serial Interface” Flash is for systems that require limited space, a low pin count, and low power consumption. The device is accessed through a 4wire SPI Interface consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which can also be configured to serve as multi-I/O (see pin descriptions). The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock frequencies of up to 166MHz allow for equivalent clock rates of up to 664MHz (166MHz x 4) which equates to 83Mbytes/s of data throughput. The IS25xP series of Flash adds support for DTR (Double Transfer Rate) commands that transfer addresses and read data on both edges of the clock. These transfer rates can outperform 16-bit Parallel Flash memories allowing for efficient memory access to support XIP (execute in place) operation. The memory array is organized into programmable pages of 256 bytes. This family supports page program mode where 1 to 256 bytes of data are programmed in a single command. QPI (Quad Peripheral Interface) supports 2-cycle instruction further reducing instruction times. Pages can be erased in groups of 4Kbyte sectors, 32Kbyte blocks, 64Kbyte blocks, and/or the entire chip. The uniform sector and block architecture allows for a high degree of flexibility so that the device can be utilized for a broad variety of applications requiring solid data retention. GLOSSARY Standard SPI In this operation, a 4-wire SPI Interface is utilized, consisting of Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. Instructions are sent via the SI pin to encode instructions, addresses, or input data to the device on the rising edge of SCK. The SO pin is used to read data or to check the status of the device. This device supports SPI bus operation modes (0,0) and (1,1). Mutil I/O SPI Multi-I/O operation utilizes an enhanced SPI protocol to allow the device to function with Dual Output, Dual Input and Output, Quad Output, and Quad Input and Output capability. Executing these instructions through SPI mode will achieve double or quadruple the transfer bandwidth for READ and PROGRAM operations. Quad I/O QPI The device enables QPI protocol by issuing an “Enter QPI mode (35h)” command. The QPI mode uses four IO pins for input and output to decrease SPI instruction overhead and increase output bandwidth. SI and SO pins become bidirectional IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3 respectively during QPI mode. Issuing an “Exit QPI (F5h) command will cause the device to exit QPI mode. Power Reset or Hardware/Software Reset can also return the device into the standard SPI mode. DTR In addition to SPI and QPI features, the device also supports SPI DTR READ. SPI DTR allows high data throughput while running at lower clock frequencies. SPI DTR READ mode uses both rising and falling edges of the clock to drive output, resulting in reducing input and output cycles by half. Programmable drive strength and Selectable burst setting. The device offers programmable output drive strength and selectable burst (wrap) length features to increase the efficiency and performance of READ operation. The driver strength and burst setting features are controlled by setting the Read Registers. A total of six different drive strengths and four different burst sizes (8/16/32/64 Byte) are available for selection. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 3 IS25LP256, IS25WP256 TABLE OF CONTENTS FEATURES .......................................................................................................................................................... 2 GENERAL DESCRIPTION .................................................................................................................................. 3 TABLE OF CONTENTS ....................................................................................................................................... 4 1. PIN CONFIGURATION ................................................................................................................................. 7 2. PIN DESCRIPTIONS .................................................................................................................................... 9 3. BLOCK DIAGRAM ...................................................................................................................................... 11 4. SPI MODES DESCRIPTION ...................................................................................................................... 12 5. SYSTEM CONFIGURATION ...................................................................................................................... 14 5.1 BLOCK/SECTOR ADDRESSES .......................................................................................................... 14 6. REGISTERS ............................................................................................................................................... 15 6.1 STATUS REGISTER ............................................................................................................................ 15 6.2 FUNCTION REGISTER ........................................................................................................................ 18 6.3 READ REGISTER AND EXTENDED REGISTER ................................................................................ 19 6.3.1 READ REGISTER ........................................................................................................................ 19 6.3.2 EXTENDED READ REGISTER .................................................................................................... 21 6.4 AUTOBOOT REGISTER ...................................................................................................................... 23 6.5 BANK ADDRESS REGISTER .............................................................................................................. 23 6.6 ADVANCED SECTOR/BLOCK PROTECTION (ASP) RELATED REGISTER .................................... 24 6.6.1 ADVANCED SECTOR/BLOCK PROTECTION REGISTER (ASPR) ........................................... 24 6.6.2 PASSWORD REGISTER ............................................................................................................. 25 6.6.3 PPB LOCK REGISTER ................................................................................................................ 25 6.6.4 PPB REGISTER ........................................................................................................................... 26 6.6.5 DYB REGISTER ........................................................................................................................... 26 7. PROTECTION MODE................................................................................................................................. 27 7.1 HARDWARE WRITE PROTECTION.................................................................................................... 27 7.2 SOFTWARE WRITE PROTECTION .................................................................................................... 27 7.2.1 BLOCK PROTECTION BITS ........................................................................................................ 27 7.2.2 ADVANCED SECTOR/BLOCK PROTECTION (ASP) ................................................................. 28 8. DEVICE OPERATION ................................................................................................................................ 35 8.1 COMMAND OVERVIEW ...................................................................................................................... 35 8.2 COMMAND SET SUMMARY ............................................................................................................... 36 8.3 NORMAL READ OPERATION (NORD, 03h or 4NORD, 13h) ............................................................. 45 8.4 FAST READ OPERATION (FRD, 0Bh or 4FRD, 0Ch) ......................................................................... 48 8.5 HOLD OPERATION .............................................................................................................................. 52 8.6 FAST READ DUAL I/O OPERATION (FRDIO, BBh or 4FRDIO, BCh) ................................................ 53 8.7 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh or 4FRDO, 3Ch)......................................... 57 8.8 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh or 4FRQO 6Ch) ........................................ 60 8.9 FAST READ QUAD I/O OPERATION (FRQIO, EBh or 4FRQIO, ECh) ............................................... 63 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 4 IS25LP256, IS25WP256 8.10 PAGE PROGRAM OPERATION (PP, 02h or 4PP, 12h).................................................................... 70 8.11 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h or 4PPQ, 34h/3Eh) ........................ 73 8.12 ERASE OPERATION ......................................................................................................................... 74 8.13 SECTOR ERASE OPERATION (SER, D7h/20h or 4SER, 21h) ........................................................ 75 8.14 BLOCK ERASE OPERATION (BER32K:52h or 4BER32K:5Ch, BER64K:D8h or 4BER64K:DCh) .. 77 8.15 CHIP ERASE OPERATION (CER, C7h/60h) ..................................................................................... 80 8.16 WRITE ENABLE OPERATION (WREN, 06h) .................................................................................... 81 8.17 WRITE DISABLE OPERATION (WRDI, 04h) ..................................................................................... 82 8.18 READ STATUS REGISTER OPERATION (RDSR, 05h) ................................................................... 83 8.19 WRITE STATUS REGISTER OPERATION (WRSR, 01h) ................................................................. 84 8.20 READ FUNCTION REGISTER OPERATION (RDFR, 48h) ............................................................... 85 8.21 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)............................................................. 86 8.22 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QIOEN,35h; QIODI,F5h) . 87 8.23 PROGRAM/ERASE SUSPEND & RESUME ...................................................................................... 88 8.24 ENTER DEEP POWER DOWN (DP, B9h) ......................................................................................... 91 8.25 RELEASE DEEP POWER DOWN (RDPD, ABh) ............................................................................... 92 8.26 SET READ PARAMETERS OPERATION (SRPNV: 65h, SRPV: C0h/63h) ...................................... 93 8.27 SET EXTENDED READ PARAMETERS OPERATION (SERPNV: 85h, SERPV: 83h) .................... 95 8.28 READ READ PARAMETERS OPERATION (RDRP, 61h) ................................................................. 96 8.29 READ EXTENDED READ PARAMETERS OPERATION (RDERP, 81h) .......................................... 97 8.30 CLEAR EXTENDED READ REGISTER OPERATION (CLERP, 82h) ............................................... 98 8.31 READ PRODUCT IDENTIFICATION (RDID, ABh) ............................................................................ 99 8.32 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh) .................................................................................................................................................................. 101 8.33 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h) ...................... 102 8.34 READ UNIQUE ID NUMBER (RDUID, 4Bh) .................................................................................... 103 8.35 READ SFDP OPERATION (RDSFDP, 5Ah) .................................................................................... 104 8.36 NO OPERATION (NOP, 00h) ........................................................................................................... 104 8.37 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE RESET ...................................................................................................................................................... 105 8.38 SECURITY INFORMATION ROW .................................................................................................... 106 8.39 INFORMATION ROW ERASE OPERATION (IRER, 64h) ............................................................... 107 8.40 INFORMATION ROW PROGRAM OPERATION (IRP, 62h) ........................................................... 108 8.41 INFORMATION ROW READ OPERATION (IRRD, 68h) ................................................................. 109 8.42 FAST READ DTR MODE OPERATION (FRDTR, 0Dh or 4FRDTR, 0Eh) ....................................... 110 8.43 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh or 4FRDDTR, BEh) ................. 115 8.44 FAST READ QUAD IO DTR MODE OPERATION (FRQDTR, EDh or 4FRQDTR, EEh) ................ 119 8.45 SECTOR LOCK/UNLOCK FUNCTIONS .......................................................................................... 127 8.46 AUTOBOOT ...................................................................................................................................... 130 8.47 READ BANK ADDRESS REGISTER OPERATION (RDBR: 16h/C8h) ........................................... 134 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 5 IS25LP256, IS25WP256 8.48 WRITE BANK ADDRESS REGISTER OPERATION (WRBRNV: 18h, WRBRV: 17h/C5h) ............ 135 8.49 ENTER 4-BYTE ADDRESS MODE OPERATION (EN4B, B7h) ...................................................... 136 8.50 EXIT 4-BYTE ADDRESS MODE OPERATION (EX4B, 29h) ........................................................... 137 8.51 READ DYB OPERATION (RDDYB, FAh or 4RDDYB, E0h) ............................................................ 138 8.52 WRITE DYB OPERATION (WRDYB, FBh or 4WRDYB, E1h) ......................................................... 140 8.53 READ PPB OPERATION (RDPPB, FCh or 4RDPPB, E2h) ............................................................ 142 8.54 PROGRAM PPB OPERATION (PGPPB, FDh or 4PGPPB, E3h) .................................................... 143 8.55 ERASE PPB OPERATION (ERPPB, E4h) ....................................................................................... 145 8.56 READ ASP OPERATION (RDASP, 2Bh) ......................................................................................... 146 8.57 PROGRAM ASP OPERATION (PGASP, 2Fh) ................................................................................. 147 8.58 READ PPB LOCK BIT OPERATION (RDPLB, A7h) ........................................................................ 148 8.59 WRITE PPB LOCK BIT OPERATION (WRPLB, A6h)...................................................................... 149 8.60 SET FREEZE BIT OPERATION (SFRZ, 91h) .................................................................................. 150 8.61 READ PASSWORD OPERATION (RDPWD, E7h) .......................................................................... 151 8.62 PROGRAM PASSWORD OPERATION (PGPWD, E8h) ................................................................. 152 8.63 UNLOCK PASSWORD OPERATION (UNPWD, E9h) ..................................................................... 153 8.64 GANG SECTOR/BLOCK LOCK OPERATION (GBLK, 7Eh) ........................................................... 154 8.65 GANG SECTOR/BLOCK UNLOCK OPERATION (GBUN, 98h) ...................................................... 155 9. ELECTRICAL CHARACTERISTICS......................................................................................................... 156 9.1 ABSOLUTE MAXIMUM RATINGS (1) ................................................................................................. 156 9.2 OPERATING RANGE ......................................................................................................................... 156 9.3 DC CHARACTERISTICS .................................................................................................................... 157 9.4 AC MEASUREMENT CONDITIONS .................................................................................................. 158 9.5 AC CHARACTERISTICS .................................................................................................................... 159 9.6 SERIAL INPUT/OUTPUT TIMING ...................................................................................................... 161 9.7 POWER-UP AND POWER-DOWN .................................................................................................... 163 9.8 PROGRAM/ERASE PERFORMANCE ............................................................................................... 164 9.9 RELIABILITY CHARACTERISTICS ................................................................................................... 164 10. PACKAGE TYPE INFORMATION ....................................................................................................... 165 10.1 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 8x6mm (L)............. 165 10.2 16-LEAD PLASTIC SMALL OUTLINE PACKAGE (300 MILS BODY WIDTH) (M) .......................... 166 10.3 24-BALL THIN PROFILE FINE PITCH BGA 6x8mm 4x6 BALL ARRAY (G) ................................... 167 10.4 24- BALL THIN PROFILE FINE PITCH BGA 6x8mm 5x5 BALL ARRAY (H) .................................. 168 11. ORDERING INFORMATION – Valid Part Numbers ............................................................................ 169 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 6 IS25LP256, IS25WP256 1. PIN CONFIGURATION HOLD# (IO3) HOLD# or RESET# (IO3) (2) 1 16 SCK 2 15 SI (IO0) RESET#/NC 3 14 NC NC 4 13 NC Vcc (3) NC 5 12 NC NC 6 11 NC CE# 7 10 GND SO (IO1) 8 9 16-pin SOIC 300mil 8 Vcc CE# 1 HOLD# or SO (IO1) 2 7 RESET# (IO3)(1) WP# (IO2) 3 6 SCK GND 4 5 SI (IO0) WP# (IO2) 8-contact WSON 8x6mm Notes: 1. According to the P7 bit setting in Read Register, either HOLD# (P7=0) or RESET# (P7=1) pin can be selected. 2. For the dedicated parts that don’t have the additional RESET# pin on pin3, either HOLD# or RESET# pin can be selected on pin1 by the P7 bit setting in Read Register when QE=0. For the dedicated parts with additional RESET# pin on pin3, only HOLD# pin is selected for pin1 regardless of the P7 bit of Read Register when QE=0. 3. The dedicated parts have additional RESET# pin (pin3) on 16-pin SOIC 300mil package. For the parts, Function Register Bit0 (RESET# Enable/Disable) will be set to “0”. The RESET# pin is independent of the P7 bit of Read Register and QE bit of Status Register. The RESET# pin has an internal pull-up resistor and may be left floating if not used. See the Ordering Information for the additional RESET# pin option. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 7 IS25LP256, IS25WP256 Top View, Balls Facing Down A1 A2 A3 NC NC RESET# (NC) Top View, Balls Facing Down A4 (2) NC B1 B2 B3 B4 NC SCK GND VCC C1 C2 C3 C4 NC CE# NC WP#(IO2) D1 D2 D3 D4 SO(IO1) SI(IO0) HOLD# or RESET# (IO3) (1) E1 E2 E3 E4 NC NC NC F1 F2 F3 F4 NC NC NC NC A3 A4 NC RESET# (NC) A5 (2) NC NC A2 NC NC B1 B2 B3 B4 B5 NC SCK GND VCC NC C1 C2 C3 C4 C5 NC CE# NC WP#(IO2) NC D1 D2 D3 D4 NC SO(IO1) SI(IO0) HOLD# or RESET# (IO3) D5 (1) NC E1 E2 E3 E4 E5 NC NC NC NC NC 5x5 Ball Array 4x6 Ball Array 24-ball TFBGA 6x8mm Notes: 1. For the dedicated parts that don’t have the additional RESET# pin, either HOLD# (P7=0) or RESET# (P7=1) pin can be selected on ball D4 by the P7 bit setting in Read Register when QE=0. For the dedicated parts with the additional RESET# pin on ball A3 (4x6 ball array) or A4 (5x5 ball array), only HOLD# pin is selected for ball D4 regardless of the P7 bit of Read Register when QE=0. 2. The dedicated parts have the additional RESET# pin on 24-ball TFBGA 6x8mm package. For the parts, Function Register Bit0 (RESET# Enable/Disable) will be set to “0”. The RESET# pin is independent of the P7 bit of Read Register and QE bit of Status Register. The RESET# pin has an internal pull-up resistor and may be left floating if not used. Call Factory for the additional RESET# pin option. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 8 IS25LP256, IS25WP256 2. PIN DESCRIPTIONS For all other packages except the package with additional RESET# pin option SYMBOL TYPE DESCRIPTION Chip Enable: The Chip Enable (CE#) pin enables and disables the devices operation. When CE# is high the device is deselected and output pins are in a high impedance state. When deselected the devices non-critical internal circuitry power down to allow minimal levels of power consumption while in a standby state. CE# INPUT When CE# is pulled low the device will be selected and brought out of standby mode. The device is considered active and instructions can be written to, data read, and written to the device. After power-up, CE# must transition from high to low before a new instruction will be accepted. Keeping CE# in a high state deselects the device and switches it into its low power state. Data will not be accepted when CE# is high. SI (IO0), SO (IO1) INPUT/ OUTPUT Serial Data Input, Serial Output, and IOs (SI, SO, IO0, and IO1): This device supports standard SPI, Dual SPI, and Quad SPI operation. Standard SPI instructions use the unidirectional SI (Serial Input) pin to write instructions, addresses, or data to the device on the rising edge of the Serial Clock (SCK). Standard SPI also uses the unidirectional SO (Serial Output) to read data or status from the device on the falling edge of the serial clock (SCK). In Dual and Quad SPI mode, SI and SO become bidirectional IO pins to write instructions, addresses or data to the device on the rising edge of the Serial Clock (SCK) and read data or status from the device on the falling edge of SCK. Quad SPI instructions use the WP# and HOLD# pins as IO2 and IO3 respectively. WP# (IO2) INPUT/ OUTPUT Write Protect/Serial Data IO (IO2): The WP# pin protects the Status Register from being written in conjunction with the SRWD bit. When the SRWD is set to “1” and the WP# is pulled low, the Status Register bits (SRWD, QE, BP3, BP2, BP1, BP0) are write-protected and vice-versa for WP# high. When the SRWD is set to “0”, the Status Register is not write-protected regardless of WP# state. When the QE bit is set to “1”, the WP# pin (Write Protect) function is not available since this pin is used for IO2. HOLD# or RESET#/Serial Data IO (IO3): When the QE bit of Status Register is set to “1”, HOLD# pin or RESET# is not available since it becomes IO3. When QE=0 the pin acts as HOLD# or RESET# and either one can be selected by the P7 bit setting in Read Register. HOLD# will be selected if P7=0 (Default) and RESET# will be selected if P7=1. HOLD# or RESET# (IO3) INPUT/ OUTPUT The HOLD# pin allows the device to be paused while it is selected. It pauses serial communication by the master device without resetting the serial sequence. The HOLD# pin is active low. When HOLD# is in a low state and CE# is low, the SO pin will be at high impedance. Device operation can resume when HOLD# pin is brought to a high state. RESET# pin is a hardware RESET signal. When RESET# is driven HIGH, the memory is in the normal operating mode. When RESET# is driven LOW, the memory enters reset mode and output is High-Z. If RESET# is driven LOW while an internal WRITE, PROGRAM, or ERASE operation is in progress, data may be lost. SCK INPUT Vcc POWER GND GROUND NC Unused Serial Data Clock: Synchronized Clock for input and output timing operations. Power: Device Core Power Supply Ground: Connect to ground when referenced to Vcc NC: Pins labeled “NC” stand for “No Connect” and should be left uncommitted. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 9 IS25LP256, IS25WP256 For the package with additional RESET# pin option - RESET# pin will be added to another pin without sharing with HOLD# pin (Call Factory for 24-ball TFBGA 6x8mm packages) SYMBOL TYPE DESCRIPTION CE# INPUT Same as the description in previous page SI (IO0), SO (IO1) INPUT/ OUTPUT Same as the description in previous page WP# (IO2) INPUT/ OUTPUT Same as the description in previous page HOLD#/Serial Data IO (IO3): When the QE bit of Status Register is set to “1”, HOLD# pin is not available since it becomes IO3. When QE=0 the pin acts as HOLD# regardless of the P7 bit of Read Register. HOLD# (IO3) INPUT/ OUTPUT The HOLD# pin allows the device to be paused while it is selected. It pauses serial communication by the master device without resetting the serial sequence. The HOLD# pin is active low. When HOLD# is in a low state and CE# is low, the SO pin will be at high impedance. Device operation can resume when HOLD# pin is brought to a high state. RESET#: This pin is available only for dedicated parts (Call Factory for 24-ball TFBGA 6x8mm packages). RESET# INPUT The RESET# pin is a hardware RESET signal. When RESET# is driven HIGH, the memory is in the normal operating mode. When RESET# is driven LOW, the memory enters reset mode and output is High-Z. If RESET# is driven LOW while an internal WRITE, PROGRAM, or ERASE operation is in progress, data may be lost. SCK INPUT Same as the description in previous page Vcc POWER Same as the description in previous page GND GROUND Same as the description in previous page NC Unused Same as the description in previous page Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 10 IS25LP256, IS25WP256 3. BLOCK DIAGRAM Control Logic High Voltage Generator Status Register I/O Buffers and Data Latches 256 Bytes Page Buffer Serial Peripheral Interface CE# SCK WP# (IO2) SI (IO0) SO (IO1) Y-Decoder (1) X-Decoder HOLD# or RESET# (IO3) Memory Array Address Latch & Counter Note1: RESET# pin can be added to another pin without sharing with HOLD# pin for the dedicated parts. Call Factory for the additional RESET# pin option for 24-ball TFBGA 6x8mm packages. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 11 IS25LP256, IS25WP256 4. SPI MODES DESCRIPTION Multiple IS25LP256 devices or multiple IS25WP256 devices can be connected on the SPI serial bus and controlled by a SPI Master, i.e. microcontroller, as shown in Figure 4.1. The devices support either of two SPI modes: Mode 0 (0, 0) Mode 3 (1, 1) The difference between these two modes is the clock polarity. When the SPI master is in stand-by mode, the serial clock remains at “0” (SCK = 0) for Mode 0 and the clock remains at “1” (SCK = 1) for Mode 3. Please refer to Figure 4.2 and Figure 4.3 for SPI and QPI mode. In both modes, the input data is latched on the rising edge of Serial Clock (SCK), and the output data is available from the falling edge of SCK. Figure 4.1 Connection Diagram among SPI Master and SPI Slaves (Memory Devices) SDO SPI interface with (0,0) or (1,1) SDI SCK SCK SO SI SCK SO SI SCK SO SI SPI Master (i.e. Microcontroller) CS3 CS2 SPI Memory Device CS1 SPI Memory Device CE# SPI Memory Device CE# WP# HOLD# or RESET (1) CE# WP# HOLD# or RESET# (1) WP# HOLD# or RESET# (1) Notes: 1. RESET# pin can be added to another pin without sharing with HOLD# pin for the dedicated parts. Call Factory for the additional RESET# pin option for 24-ball TFBGA 6x8mm packages. 2. SI and SO pins become bidirectional IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3 respectively during QPI mode. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 12 IS25LP256, IS25WP256 Figure 4.2 SPI Mode Support SCK Mode 0 (0,0) SCK Mode 3 (1,1) MSB SI SO MSB Figure 4.3 QPI Mode Support CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK Mode 0 3-byte Address Mode Bits Data 1 Data 2 Data 3 IO0 C4 C0 20 16 12 8 4 0 4 0 4 0 4 0 4 0 ... IO1 C5 C1 21 17 13 9 5 1 5 1 5 1 5 1 5 1 ... IO2 C6 C2 22 18 14 10 6 2 6 2 6 2 6 2 6 2 ... IO3 C71 C3 23 1 19 15 11 7 3 71 3 71 3 71 3 71 3 ... Note1: MSB (Most Significant Bit) Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 13 IS25LP256, IS25WP256 5. SYSTEM CONFIGURATION The memory array is divided into uniform 4 Kbyte sectors or uniform 32/64 Kbyte blocks (a block consists of eight/sixteen adjacent sectors respectively). Table 5.1 illustrates the memory map of the device. The Status Register controls how the memory is protected. 5.1 BLOCK/SECTOR ADDRESSES Table 5.1 Block/Sector Addresses of IS25LP256 and IS25WP256 Memory Density Block No. (64Kbyte) Block No. (32Kbyte) Block 0 Block 0 Block 1 Block 2 Block 1 Block 3 Block 4 Block 2 Block 5 : : Block 508 256Mb Block 254 Block 509 Block 510 Block 255 Block 511 : : Block 1020 Block 510 Block 1021 Block 1022 Block 511 Block 1023 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Sector 0 : : Sector 15 Sector 16 : : Sector 31 Sector 32 : : Sector Size (Kbyte) 4 : : 4 4 : : 4 4 : : 000000h - 000FFFh : : 00F000h - 00FFFFh 010000h - 010FFFh : : 01F000h - 01FFFFh 020000h - 020FFFh : : Sector 47 4 02F000h - 02FFFFh Sector No. Address Range : : : Sector 4064 : : Sector 4079 Sector 4080 : : Sector 4095 4 : : 4 4 : : 4 FE0000h – FE0FFFh : : FEF000h – FEFFFFh FF0000h – FF0FFFh : : FFF000h – FFFFFFh : : : Sector 8160 : : Sector 8175 Sector 8176 : : Sector 8191 4 : : 4 4 : : 4 1FE0000h – 1FE0FFFh : : 1FEF000h – 1FEFFFFh 1FF0000h – 1FF0FFFh : : 1FFF000h – 1FFFFFFh 14 IS25LP256, IS25WP256 6. REGISTERS The device has many sets of Registers such as Status, Function, Read, AutoBoot, and so on. 6.1 STATUS REGISTER Status Register Format and Status Register Bit Definitions are described in Tables 6.1 & 6.2. Table 6.1 Status Register Format Default Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 SRWD QE BP3 BP2 BP1 BP0 WEL WIP 0 0 0 0 0 0 0 0 Table 6.2 Status Register Bit Definition Bit Name Bit 0 WIP Bit 1 WEL Bit 2 BP0 Bit 3 BP1 Bit 4 BP2 Bit 5 BP3 Bit 6 QE Bit 7 SRWD Definition Write In Progress Bit: "0" indicates the device is ready (default) "1" indicates a write cycle is in progress and the device is busy Write Enable Latch: "0" indicates the device is not write enabled (default) "1" indicates the device is write enabled Block Protection Bit: (See Tables 6.4 for details) "0" indicates the specific blocks are not write-protected (default) "1" indicates the specific blocks are write-protected Quad Enable bit: “0” indicates the Quad output function disable (default) “1” indicates the Quad output function enable Status Register Write Disable: (See Table 7.1 for details) "0" indicates the Status Register is not write-protected (default) "1" indicates the Status Register is write-protected Read/Write Type R Volatile R/W 1 Volatile R/W Non-Volatile R/W Non-Volatile R/W Non-Volatile Note: WEL bit can be written by WREN and WRDI commands, but cannot by WRSR command. The BP0, BP1, BP2, BP3, QE, and SRWD are non-volatile memory cells that can be written by a Write Status Register (WRSR) instruction. The default value of the BP0, BP1, BP2, BP3, QE, and SRWD bits were set to “0” at factory. The Status Register can be read by the Read Status Register (RDSR). The function of Status Register bits are described as follows: WIP bit: Write In Progress (WIP) is read-only, and can be used to detect the progress or completion of a Program, Erase, Write/Set Non-Volatile/OTP Register, or Gang Sector/Block Lock/Unlock operation. WIP is set to “1” (busy state) when the device is executing the operation. During this time the device will ignore further instructions except for Read Status/Function/Extended Read Register and Software/Hardware Reset instructions. In addition to the instructions, an Erase/Program Suspend instruction also can be executed during a Program or Erase operation. When an operation has completed, WIP is cleared to “0” (ready state) whether the operation is successful or not and the device is ready for further instructions. WEL bit: Write Enable Latch (WEL) indicates the status of the internal write enable latch. When WEL is “0”, the internal write enable latch is disabled and the Write operations described in Table 6.3 are inhibited. When WEL is “1”, the Write operations are allowed. WEL is set by a Write Enable (WREN) instruction. Each Write NonVolatile Register, Program and Erase instruction must be preceded by a WREN instruction. The volatile register related commands such as the Set Volatile Read Register, the Set Volatile Extended Read Register, the Write Volatile Bank Address Register, and WRDYB don’t require to set WEL to “1". WEL can be reset by a Write Disable (WRDI) instruction. It will automatically reset after the completion of any Write operation. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 15 IS25LP256, IS25WP256 Table 6.3 Instructions requiring WREN instruction ahead Instructions must be preceded by the WREN instruction Name Hex Code Operation PP 02h Serial Input Page Program (3-byte or 4-byte Address) 4PP 12h Serial Input Page Program (4-byte Address) PPQ 32h/38h Quad Input Page Program (3-byte or 4-byte Address) 4PPQ 34h/3Eh Quad Input Page Program (4-byte Address) SER D7h/20h Sector Erase 4KB (3-byte or 4-byte Address) 4SER 21h Sector Erase 4KB (4-byte Address) BER32 (32KB) 52h Block Erase 32KB (3-byte or 4-byte Address) 4BER32 (32KB) 5Ch Block Erase 32KB (4-byte Address) BER64 (64KB) D8h Block Erase 64KB (3-byte or 4-byte Address) 4BER64 (64KB) DCh Block Erase 64KB (4-byte Address) CER C7h/60h Chip Erase WRSR 01h Write Status Register WRFR 42h Write Function Register SRPNV 65h Set Read Parameters (Non-Volatile) SERPNV 85h Set Extended Read Parameters (Non-Volatile) IRER 64h Erase Information Row IRP 62h Program Information Row WRABR 15h Write AutoBoot Register WRBRNV 17h Write Non-Volatile Bank Address Register PGPPB FDh Write PPB (3-byte or 4-byte Address) 4PGPPB E3h Write PPB (4-byte Address) ERPPB E4h Erase PPB PGASP 2Fh Program ASP WRPLB A6h Write PPB Lock Bit SFRZ 91h Set FREEZE bit PGPWD E8h Program Password BP3, BP2, BP1, BP0 bits: The Block Protection (BP3, BP2, BP1 and BP0) bits are used to define the portion of the memory area to be protected. Refer to Table 6.4 for the Block Write Protection (BP) bit settings. When a defined combination of BP3, BP2, BP1 and BP0 bits are set, the corresponding memory area is protected. Any program or erase operation to that area will be inhibited. Note: A Chip Erase (CER) instruction will be ignored unless all the Block Protection Bits are “0”s. SRWD bit: The Status Register Write Disable (SRWD) bit operates in conjunction with the Write Protection (WP#) signal to provide a Hardware Protection Mode. When the SRWD is set to “0”, the Status Register is not write-protected. When the SRWD is set to “1” and the WP# is pulled low (VIL), the bits of Status Register (SRWD, QE, BP3, BP2, BP1, BP0) become read-only, and a WRSR instruction will be ignored. If the SRWD is set to “1” and WP# is pulled high (VIH), the Status Register can be changed by a WRSR instruction. QE bit: The Quad Enable (QE) is a non-volatile bit in the Status Register that allows quad operation. When the QE bit is set to “0”, the pin WP# and HOLD#/RESET# are enabled. When the QE bit is set to “1”, the IO2 and IO3 pins are enabled. WARNING: The QE bit must be set to “0” if WP# or HOLD#/RESET# pin is tied directly to the power supply. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 16 IS25LP256, IS25WP256 Table 6.4 Block (64Kbyte) assignment by Block Write Protect (BP) Bits Status Register Bits Protected Memory Area BP3 BP2 BP1 BP0 0 0 0 0 TBS(T/B selection) = 0, Top area TBS(T/B selection) = 1, Bottom area 0 ( None) 0 ( None) st th 0 0 0 1 1 (1 block: 511 ) 1 (1 block: 0 ) 0 0 1 0 2 (2 blocks: 510 and 511 ) th st th st 3 (4 blocks: 0 to 3 ) th st 4 (8 blocks: 0 to 7 ) 0 0 1 1 3 (4 blocks: 508 to 511 ) 0 1 0 0 4 (8 blocks: 504 to 511 ) 0 1 0 1 5 (16 blocks: 496 to 511 ) 0 1 1 0 6 (32 blocks: 480 to 511 ) 0 1 1 1 7 (64 blocks: 448 to 511 ) 1 0 0 0 8 (128 blocks: 384 to 511 ) 1 0 0 1 9 (256 blocks: 256 to 511 ) 1 0 1 x 10-11 (512 blocks: 0 to 511 ) All blocks 1 1 x x st 2 (2 blocks: 0 and 1 ) th th rd th th th st 5 (16 blocks: 0 to 15 ) th st 6 (32 blocks: 0 to 31 ) th st 7 (64 blocks: 0 to 63 ) th th st th rd th st 8 (128 blocks: 0 to 127 ) th st 9 (256 blocks: 0 to 255 ) th st th st 12-15 (512 blocks: 0 to 511 ) All blocks Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 th th th th th th st th st 10-11 (512 blocks: 0 to 511 ) All blocks 12-15 (512 blocks: 0 to 511 ) All blocks 17 IS25LP256, IS25WP256 6.2 FUNCTION REGISTER Function Register Format and Bit definition are described in Table 6.5 and Table 6.6. Table 6.5 Function Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 IRL3 IRL2 IRL1 IRL0 ESUS PSUS TBS 0 0 0 0 0 0 0 Default Bit 0 RESET# Enable/Disable 0 or 1 Table 6.6 Function Register Bit Definition Bit Name Bit 0 RESET# Enable/Disable Bit 1 TBS Bit 2 PSUS Bit 3 ESUS Bit 4 IR Lock 0 Bit 5 IR Lock 1 Bit 6 IR Lock 2 Bit 7 IR Lock 3 Definition RESET# Enable/Disable “0” indicates Enable additional RESET# “1” indicates Disable additional RESET# Top/Bottom Selection. (See Table 6.4 for details) “0” indicates Top area. “1” indicates Bottom area. Program suspend bit: “0” indicates program is not suspend “1” indicates program is suspend Erase suspend bit: "0" indicates Erase is not suspend "1" indicates Erase is suspend Lock the Information Row 0: “0” indicates the Information Row can be programmed “1” indicates the Information Row cannot be programmed Lock the Information Row 1: “0” indicates the Information Row can be programmed “1” indicates the Information Row cannot be programmed Lock the Information Row 2: “0” indicates the Information Row can be programmed “1” indicates the Information Row cannot be programmed Lock the Information Row 3: “0” indicates the Information Row can be programmed “1” indicates the Information Row cannot be programmed Read /Write Type R/W for 0 R for 1 OTP R/W OTP R Volatile R Volatile R/W OTP R/W OTP R/W OTP R/W OTP Note: Function Register bits are only one time programmable and cannot be modified once wrote to “1”. RESET# Enable/Disable: The default of the bit is dependent on parts. The dedicated parts that have additional RESET# will default to “0” for enabling additional RESET# pin. All other parts will default to “1” for disabling additional RESET# pin. If the bit defaults to “1”, it can’t be programmed. Top/Bottom Selection: BP0~3 area assignment changed from Top or Bottom. See Table 6.4 for details. PSUS bit: The Program Suspend Status bit indicates when a Program operation has been suspended. The PSUS changes to “1” after a suspend command is issued during the program operation. Once the suspended Program resumes, the PSUS bit is reset to “0”. ESUS bit: The Erase Suspend Status bit indicates when an Erase operation has been suspended. The ESUS bit is “1” after a suspend command is issued during an Erase operation. Once the suspended Erase resumes, the ESUS bit is reset to “0”. IR Lock bit 0 ~ 3: The Information Row Lock bits are programmable. If the bit set to “1”, the Information Row can’t be programmed. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 18 IS25LP256, IS25WP256 6.3 READ REGISTER AND EXTENDED REGISTER Read Register format and bit definitions are described below. Read Register and Extended Read Register consist of a pair of rewritable non-volatile register and volatile register, respectively. During power up sequence, volatile register will be loaded with the value of non-volatile value. 6.3.1 READ REGISTER Table 6.7 and Table 6.8 define all bits that control features in SPI/QPI modes. HOLD#/RESET# pin selection (P7) bit is used to select HOLD# pin or RESET# pin. For 16-pin SOIC, RESET# pin will be a separate pin (pin3). The Dummy Cycle bits (P6, P5, P4, P3) define how many dummy cycles are used during various READ modes. The wrap selection bits (P2, P1, P0) define burst length with an enable bit. The SET READ PARAMETERS Operations (SRPNV: 65h, SRPV: C0h or 63h) are used to set all the Read Register bits, and can thereby define HOLD#/RESET# pin selection, dummy cycles, and burst length with wrap around. SRPNV is used to set the non-volatile register and SRPV is used to set the volatile register. Table 6.7 Read Register Parameter Bit Table Default P7 HOLD#/ RESET# 0 P6 Dummy Cycles 0 P5 Dummy Cycles 0 P4 Dummy Cycles 0 P3 Dummy Cycles 0 P2 Wrap Enable 0 P1 Burst Length 0 P0 Burst Length 0 Table 6.8 Read Register Bit Definition Read/Write Bit Name Definition P0 Burst Length Burst Length R/W P1 Burst Length Burst Length R/W P2 Burst Length Set Enable Burst Length Set Enable Bit: "0" indicates disable (default) "1" indicates enable R/W P3 Dummy Cycles P4 Dummy Cycles P5 Dummy Cycles P6 Dummy Cycles P7 HOLD#/ RESET# Type Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile R/W Number of Dummy Cycles: Bits1 to Bit4 can be toggled to select the number of dummy cycles (1 to 15 cycles) R/W R/W R/W HOLD#/RESET# pin selection Bit: "0" indicates the HOLD# pin is selected (default) "1" indicates the RESET# pin is selected Non-Volatile and Volatile R/W Table 6.9 Burst Length Data P1 P0 8 bytes 0 0 16 bytes 0 1 32 bytes 1 0 64 bytes 1 1 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 19 IS25LP256, IS25WP256 Table 6.10 Wrap Function Wrap around boundary P2 Whole array regardless of P1 and P0 value 0 Burst Length set by P1 and P0 1 Table 6.11 Read Dummy Cycles EB[4:1] Dummy Cycles2,3 1 Fast read5 0Bh/0Ch Fast read5 0Bh/0Ch Fast Read Dual Output 3Bh/3Ch SPI QPI SPI SPI SPI 166MHz 90MHz 166MHz 104MHz Quad IO Dual IO Fast Read Read Read Quad Output EBh/ECh BBh/BCh 6Bh/6Ch FRDTR 0Dh/0Eh FRDDTR BDh/BEh FRQDTR EDh/EEh SPI, QPI SPI/QPI SPI4 SPI, QPI 150MHz 90MHz 80/80MHz 60MHz 70MHz 0 Default 1 1 84MHz 33MHz 95MHz 55MHz 70MHz 33MHz 50/20MHz 30MHz 20MHz 2 2 120MHz 50MHz 104MHz 80MHz 80MHz 50MHz 66/30MHz 40MHz 30MHz 3 3 133MHz 60MHz 120MHz 95MHz 95MHz 60MHz 80/40MHz 50MHz 40MHz 4 4 166MHz 70MHz 133MHz 104MHz 104MHz 70MHz 80/50MHz 60MHz 50MHz 5 5 166MHz 80MHz 140MHz 120MHz 120MHz 80MHz 80/60MHz 70MHz 60MHz 6 6 166MHz 90MHz 150MHz 133MHz 133MHz 90MHz 80/70MHz 80MHz 70MHz 7 7 166MHz 104MHz 166MHz 140MHz 140MHz 104MHz 80/80MHz 80MHz 80MHz 8 8 166MHz 120MHz 166MHz 150MHz 150MHz 120MHz 80/80MHz 80MHz 80MHz 9 9 166MHz 133MHz 166MHz 166MHz 160MHz 133MHz 80/80MHz 80MHz 80MHz 10 10 166MHz 140MHz 166MHz 166MHz 166MHz 140MHz 80/80MHz 80MHz 80MHz 11 11 166MHz 150MHz 166MHz 166MHz 166MHz 150MHz 80/80MHz 80MHz 80MHz 12 12 166MHz 160MHz 166MHz 166MHz 166MHz 160MHz 80/80MHz 80MHz 80MHz 13 13 166MHz 166MHz 166MHz 166MHz 166MHz 166MHz 80/80MHz 80MHz 80MHz 14 14 166MHz 166MHz 166MHz 166MHz 166MHz 166MHz 80/80MHz 80MHz 80MHz 15 15 166MHz 166MHz 166MHz 166MHz 166MHz 166MHz 80/80MHz 80MHz 80MHz Notes: 1. Default dummy cycles are as follows. Operation Command Normal mode Dummy Cycles DTR mode Normal mode DTR mode Fast Read SPI 0Bh/0Ch 0Dh/0Eh 8 8 Fast Read QPI 0Bh/0Ch 0Dh/0Eh 6 6 Fast Read Dual Output 0Bh/0Ch - 8 - Dual IO Read SPI BBh/BCh BDh/BEh 4 4 Fast Read Quad Output 6Bh/6Ch - 8 - Quad IO Read SPI/QPI EBh/ECh EDh/EEh 6 6 Comment RDUID, RDSFDP, IRRD instructions are also applied. 2. Enough number of dummy cycles must be applied to execute properly the AX read operation. 3. Must satisfy bus I/O contention. For instance, if the number of dummy cycles and AX bits cycles are same, then X must be Hi-Z. 4. QPI is not available for FRDDTR command. 5. RDUID, RDSFDP, IRRD instructions are also applied. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 20 IS25LP256, IS25WP256 6.3.2 EXTENDED READ REGISTER Table 6.12 and Table 6.13 define all bits that control features in SPI/QPI modes. The ODS2, ODS1, ODS0 (EB7, EB6, EB5) bits provide a method to set and control driver strength. The four bits (EB3, EB2, EB1, EB0) are read-only bits and may be checked to know what the status is or whether there is an error. These bits are not affected by SERPNV or SERPV commands. EB4 bit remains reserved for future use. The SET EXTENDED READ PARAMETERS Operations (SERPNV: 85h, SERPV: 83h) are used to set all the Extended Read Register bits, and can thereby define the output driver strength used during READ modes. SRPNV is used to set the non-volatile register and SRPV is used to set the volatile register. Table 6.12 Extended Read Register Bit Table EB7 EB6 EB5 EB4 EB3 EB2 EB1 EB0 ODS2 ODS1 ODS0 Reserved E_ERR P_ERR PROT_E WIP 1 1 1 1 0 0 0 0 Read/Write Type R Volatile R Volatile R Volatile R Volatile R Reserved Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Default Table 6.13 Extended Read Register Bit Definition Bit Name EB0 WIP EB1 PROT_E EB2 P_ERR EB3 E_ERR EB4 Reserved EB5 ODS0 EB6 ODS1 EB7 ODS2 Definition Write In Progress Bit: Has exactly same function as the bit0 (WIP) of Status Register “0”: Ready, “1”: Busy Protection Error Bit: "0" indicates no error "1" indicates protection error in an Erase or a Program operation Program Error Bit: "0" indicates no error "1" indicates an Erase operation failure or protection error Erase Error Bit: "0" indicates no error "1" indicates a Program operation failure or protection error Reserved R/W Output Driver Strength: Output Drive Strength can be selected according to Table 6.14 R/W R/W Table 6.14 Driver Strength Table ODS2 ODS1 ODS0 Description 0 0 0 Reserved 0 0 1 12.50% 0 1 0 25% 0 1 1 37.50% 1 0 0 Reserved 1 0 1 75% 1 1 0 100% 1 1 1 50% Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Remark Default 21 IS25LP256, IS25WP256 WIP bit: The definition of the WIP bit is exactly same as the one of Status Register. PROT_E bit: The Protection Error bit indicates whether an Erase or Program operation has attempted to modify a protected array sector or block, or to access a locked Information Row region. When the bit is set to “1” it indicates that there was an error or errors in previous Erase or Program operations. See Table 6.15 for details. P_ERR bit: The Program Error bit indicates whether a Program or Write/Set Register operation has succeeded or failed, or whether a Program operation has attempted to program a protected array sector/block or a locked Information Row region. When the bit is set to “1” it indicates that there was an error or errors in previous Program or Write/Set Register operations. See Table 6.15 for details. E_ERR bit: The Erase Error bit indicates whether an Erase or Write/Set Non-Volatile Register operation has succeeded or failed, or whether an Erase operation has attempted to erase a protected array sector/block or a locked Information Row region. When the bit is set to “1” it indicates that there was an error or errors in previous Erase or Write/Set Non-Volatile Register operations. See Table 6.15 for details. Table 6.15 Instructions to set PROT_E, P_ERR, or E_ERR bit Instructions Description PP/4PP/PPQ/4PPQ/PGPPB/ 4PGPPB/PGPWD The commands will set the P_ERR if there is a failure in the operation. Attempting to program within the protected array sector/block or within an erase suspended sector/block will result in a programming error with P_ERR and PROT_E set to “1”. IRP The command will set the P_ERR if there is a failure in the operation. In attempting to program within a locked Information Row region, the operation will fail with P_ERR and PROT_E set to 1. PGASP The command will set the P_ERR if there is a failure in the operation. Attempting to program ASPR[2:1] after the Protection Mode is selected or attempting to program ASPR[2:1] = 00b will result in a programming error with P_ERR and PROT_E set to “1”. UNPWD If the UNPWD command supplied password does not match the hidden internal password, the UNPWD operation fails in the same manner as a programming operation on a protected sector/block and sets the P_ERR and PROT_E to “1”. WRSR/WRABR/SRPNV/ SERPNV/WRBRNV The update process for the non-volatile register bits involves an erase and a program operation on the non-volatile register bits. If either the erase or program portion of the update fails, the related error bit (P_ERR or E_ERR) will be set to “1”. WRFR The commands will set the P_ERR if there is a failure in the operation. SER/4SER/BER32K/ 4BER32K/BER64K/ 4BER64K/CER/IRER/ERPPB The commands will set the E_ERR if there is a failure in the operation. E_ERR and PROT_E will be set to “1” when the user attempts to erase a protected main memory sector/block or a locked Information Row region. However, the Chip Erase (CER) command will not set E_ERR and PROT_E if a protected sector/block is found during the command execution. Notes: 1. OTP bits in the Function Register and TBPARM (OTP bit) in the ASP Register may only be programmed to “1”. Writing of the bits back to “0” is ignored and no error is set. 2. Read only bits in registers are never modified and the related bits in the Write Register command data byte are ignored without setting a program or erase error indication. 3. Once the PROT_E, P_ERR, and E_ERR error bits are set to “1”, they remains set to “1” until they are cleared to “0” with a Clear Extended Read Register (CLERP) command. This means that those error bits must be cleared through the CLERP command. Alternatively, Hardware Reset, or Software Reset may be used to clear the bits. 4. Any further command will be executed even though the error bits are set to “1”. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 22 IS25LP256, IS25WP256 6.4 AUTOBOOT REGISTER AutoBoot Register Bit (32 bits) definitions are described in Table 6.16. Table 6.16 AutoBoot Register Parameter Bit Table Bits Symbols Function Type Default Value AB[31:24] ABSA Reserved [0h] Reserved 0000000h AB[23:5] ABSA AB[4:1] ABSD AB0 ABE AutoBoot Start Address AutoBoot Start Delay AutoBoot Enable NonVolatile NonVolatile NonVolatile 00000h 00h 0 Description Reserved for future use 512 byte boundary address for the start of boot code access Number of initial delay cycles between CE# going low and the first bit of boot code being transferred 1 = AutoBoot is enabled 0 = AutoBoot is not enabled 6.5 BANK ADDRESS REGISTER Related Commands: Read Volatile Bank Address Register (RDBR 16h/C8h), Write Volatile Bank Address Register (WRBRV 17h/C5h), Write Non-Volatile Bank Address Register (WRBRNV 18h), Enter 4-byte Address Mode (EN4B B7h), and Exit 4-byte Address Mode (EX4B 29h). Bank Address Register Bit (8 bits) definitions are described in Table 6.17 and Table 6.18. Table 6.17 Bank Address Register Bit Table BA7 BA6 BA5 BA4 BA3 BA2 BA1 BA0 EXTADD Reserved Reserved Reserved Reserved Reserved Reserved BA24 0 0 0 0 0 0 0 0 Read/Write Type R/W Non-Volatile and Volatile R Reserved Default Table 6.18 Bank Address Register Bit Definition Bit Name Definition BA0 BA24 BA1 Reserved Enables 128Mb segment selection in 3-byte addressing "0" indicates lower 128Mb segment is selected. "1" indicates upper 128Mb segment is selected. Reserved BA2 Reserved Reserved R Reserved BA3 Reserved Reserved R Reserved BA4 Reserved Reserved R Reserved BA5 Reserved Reserved R Reserved BA6 Reserved R Reserved BA7 EXTADD Reserved 3-byte or 4-byte addressing selection Bit: "0" indicates 3-byte addressing. "1" indicates 4-byte addressing. R/W Non-Volatile and Volatile BA24: The Bank Address Register supplies additional high order bits of the main flash array byte boundary address for legacy commands that supply only the low order 24 bits of address. The Bank Address is used as the high bits of address (above A23) for all 3-byte address commands when EXTADD=0. The Bank Address is not used when EXTADD = 1 and traditional 3-byte address commands are instead required to provide all four bytes of address. EXTADD: Extended Address (EXTADD) controls the address field size for legacy SPI commands. By default (Power Up, Hardware Reset, and Software Reset), it is cleared to “0” for 3 bytes (24 bits) of address. When set to “1”, the legacy commands will require 4 bytes (32 bits) for the address field. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 23 IS25LP256, IS25WP256 6.6 ADVANCED SECTOR/BLOCK PROTECTION (ASP) RELATED REGISTER 6.6.1 ADVANCED SECTOR/BLOCK PROTECTION REGISTER (ASPR) Related Commands: Read ASP (RDASP 2Bh) and Program ASP (PGASP 2Fh). Advanced Sector/Block Protection (ASP) Register Bit (16 bits) definitions are described in Tables 6.19 and 6.20. Table 6.19 Advanced Sector/Block Protection Register (ASPR) Bit Table Default 15 7 to 14 6 5 4 3 2 1 0 TBPARM Reserved Reserved Reserved Reserved Reserved PWDMLB PSTMLB Reserved 1 1 1 1 1 1 1 1 1 Table 6.20 Advanced Sector/Block Protection Register (ASPR) Bit Definition Bit Name 0 Reserved 1 PSTMLB 2 PWDMLB 3:14 Reserved 15 TBPARM Definition Reserved Persistent Protection Mode Lock Bit “0” = Persistent Protection Mode permanently enabled. “1” = Persistent Protection Mode not permanently enabled. Password Protection Mode Lock Bit “0” = Password Protection Mode permanently enabled. “1” = Password Protection Mode not permanently enabled. Reserved Configures Parameter Sectors location “0” = 4KB physical sectors at top, (high address) “1” = 4KB physical sectors at bottom (Low address) Read/Write R Reserved R/W OTP R/W OTP R Reserved R/W OTP Type The Advanced Sector/Block Protection Register (ASPR) is used to permanently configure the behavior of Advanced Sector/Block Protection (ASP) features and parameter sectors location. PWDMLB (ASPR[2]) and PSTMLB (ASPR[1]) bits: When shipped from the factory, all devices default ASP to the Persistent Protection Mode, with all sectors unprotected, when power is applied. The device programmer or host system must then choose which sector/block protection method to use. Programming either of the Protection Mode Lock Bits locks the part permanently in the selected mode: • • • • ASPR[2:1] = 11 = No ASP mode selected, Persistent Protection Mode is the default. ASPR[2:1] = 10 = Persistent Protection Mode permanently selected. ASPR[2:1] = 01 = Password Protection Mode permanently selected. ASPR[2:1] = 00 = Illegal condition, attempting to program both bits to zero results in a programming failure and the program operation will abort. It will result in a programming error with P_ERR set to 1. As a result, PWDMLB and PSTMLB are mutually exclusive, only one may be programmed to zero. ASPR programming rules: • If the Password Protection Mode is chosen, the password must be programmed prior to setting the corresponding bit. • Once the Protection Mode is selected, the ASPR[2:1] bits are permanently protected from programming and no further change to the ASPR[2:1] is allowed. Attempting to program ASPR[2:1] after selected will result in a programming error with P_ERR set to 1. The programming time of the ASPR is the same as the typical page programming time. The system can determine the status of the ASPR programming operation by reading the WIP bit in the Status Register or Extended Read Register. • TBPARM bit can be programmed even after ASPR[2:1] bits are programmed while the FREEZE bit in the PPB Lock Register is “0”. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 24 IS25LP256, IS25WP256 TBPARM bit: TBPARM defines the logical location of the parameter block. The parameter block consists of thirty-two 4KB sectors, which replace two 64KB blocks. When TBPARM is set to a “0” the parameter block is in the top of the memory array address space. When TBPARM is set to a “1” the parameter block is at the Bottom of the array. TBPARM is OTP and set to a “1” when it ships from Factory. If TBPARM is programmed to “0”, an attempt to change it back to “1” will fail and ignore the Program. The desired state of TBPARM must be selected during the initial configuration of the device during system manufacture; before the first program or erase operation on the main flash array. TBPARM must not be programmed after programming or erasing is done in the main flash array. TBS can be programmed independent of TBPARM. Therefore, the user can elect to store parameter information from the bottom of the array and protect boot code starting at the top of the array, and vice versa. Or the user can select to store and protect the parameter information starting from the top or bottom together. 6.6.2 PASSWORD REGISTER Related Commands: Read Password (RDPWD E7h), Program Password (PGPWD E8h), and Unlock Password (UNPWD, E9h). Table 6.21 Password Register Bit Definition Bit 0:63 Name Definition Default Read/Write Type PSTMLB 64 bit hidden password: The password is no longer readable after the password protection mode is selected by programming ASPR bit 2 to zero. FFFFFFFFFFFFFFFFh R/W OTP 6.6.3 PPB LOCK REGISTER Related Commands: Read PPB Lock Bit (RDPLB A7h), Write PPB Lock Bit (WRPLB A6h), and Set FREEZE Bit (SFRZ 91h). The WRPLB is available only in Persistent Protection Mode. Table 6.22 PPB Lock Register Bit Definition Bit Name 0 PPBLK 1:6 Reserved 7 FREEZE Definition PPB Lock bit: Protect PPB Array “0” = PPB array protected until next power cycle or Hardware Reset “1” = PPB array may be programmed or erased. Reserved Lock current state of BP3-0 bits in Status Register, TBS in Function Register and TBPARM in ASPR, and Information Row (IR) regions. “1” = Locked “0” = Un-locked Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Default Read/Write Type Persistent: 1 Password: 0 R/W Volatile R Reserved R/W Volatile Reserved 0 25 IS25LP256, IS25WP256 PPBLK bit: The PPB Lock bit is a volatile bit for protecting all PPB bits. When cleared to 0, it locks all PPBs, when set to 1, it allows the PPBs to be changed. The WRPLB command is used to clear the PPB Lock bit to 0. The PPB Lock bit must be cleared to 0 only after all the PPBs are configured to the desired settings. In Persistent Protection mode, the PPB Lock bit is set to 1 during POR or Hardware Reset. When cleared to 0, no software command sequence can set the PPB Lock bit to 1, only another Hardware Reset or power-up can set the PPB Lock bit. In the Password Protection mode, the PPB Lock bit is cleared to 0 during POR or Hardware Reset. The PPB Lock bit can only be set to 1 by the Unlock Password command. FREEZE bit: FREEZE bit, when set to “1”, locks the current state of BP3-0 in Status Register, TBS in the Function Register, TBPARM in the Advanced Sector/Block Protection Register, and the Information Row. This prevents writing, programming, or erasing these areas. As long as FREEZE remains cleared to logic “0”, BP3-0 in Status Register, TBS in the Function Register, and TBPARM in the Advanced Sector/Block Protection Register are writable and the Information Row is programmable. Once FREEZE has been written to a logic “1” it can only be cleared to a logic “0” by a power-on cycle or a Hardware Reset. Software Reset will not affect the state of FREEZE. The FREEZE is volatile and the default state of FREEZE after power-on is “0”. The FREEZE can be set to “1” by a SFRZ command. 6.6.4 PPB REGISTER Related Commands: Read PPB (RDPPB FCh or 4RDPPB E2h)), Program PPB (PGPPB FDh or 4PGPPB E3h), and Erase PPB (ERPPB E4h). Table 6.23 PPB Register Bit Definition Bit 0:7 Name Definition Default Read/Write Type PPB Read or Program per sector/block PPB: 00h = PPB for the sector/block addressed by the PPBRD or PPBP command is programmed to “0”, protecting that sector/block from program or erase operations. FFh = PPB for the sector/block addressed by the PPBRD or PPBP command is erased to “1”, not protecting that sector/block from program or erase operations. FFh R/W Non-Volatile 6.6.5 DYB REGISTER Related Commands: Read DYB (RDDYB FAh or 4RDDYB E0h) and Write DYB (WRDYB FBh or 4WRDYB E1h). Table 6.24 DYB Register Bit Definition Bit 0:7 Name Definition Default Read/Write Type DYB Read or Write per sector/block DYB: 00h = DYB for the sector/block addressed by the DYBRD or DYBP command is cleared to “0”, protecting that sector/block from program or erase operations. FFh = DYB for the sector/block addressed by the DYBRD or DYBP command is set to “1”, not protecting that sector/block from program or erase operations. FFh R/W Volatile Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 26 IS25LP256, IS25WP256 7. PROTECTION MODE The device supports hardware and software write-protection mechanisms. 7.1 HARDWARE WRITE PROTECTION The Write Protection (WP#) pin provides a hardware write protection method for BP3, BP2, BP1, BP0, SRWD, and QE in the Status Register. Refer to the section 6.1 STATUS REGISTER. Write inhibit voltage (VWI) is specified in the section 9.7 POWER-UP AND POWER-DOWN. All write sequence will be ignored when Vcc drops to VWI. Table 7.1 Hardware Write Protection on Status Register SRWD WP# Status Register 0 Low Writable 1 Low Protected 0 High Writable 1 High Writable Note: Before the execution of any program, erase or Write Status/Function Register instruction, the Write Enable Latch (WEL) bit must be enabled by executing a Write Enable (WREN) instruction. If the WEL bit is not enabled, the program, erase or write register instruction will be ignored. 7.2 SOFTWARE WRITE PROTECTION The device also provides two kinds of software write protection feature. One is Block Protection by Block Protection bits (BP3, BP2, BP1, BP0) and another is Advanced Sector/Block Protection (ASP). When Block Protection is enabled (i.e., any BP3-0 are set to “1”), Advanced Sector/Block Protection (ASP) can still be used to protect sectors/blocks not protected by the Block Protection scheme. In the case that both ASP and Block Protection are used on the same sector/block the logical OR of ASP and Block Protection related to the sector/block is used. Warning: ASP and Block Protection should not be used concurrently. Use one or the other, but not both. 7.2.1 BLOCK PROTECTION BITS The device provides a software write protection feature. The Block Protection bits (BP3, BP2, BP1, BP0) allow part or the whole memory area to be write-protected. For details, see 6.1 Status Register. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 27 IS25LP256, IS25WP256 7.2.2 ADVANCED SECTOR/BLOCK PROTECTION (ASP) There are two ways to implement software Advanced Sector/Block Protection on this device: Password Protection method or Persistent Protection methods. Through these two protection methods, user can disable or enable the programming or erasing operation to any or all blocks including 32 top 4K sectors or 32 bottom 4K sectors. The Figure 7.1 shows an overview of these methods. Every main flash array block/top sector/bottom sector has a non-volatile (PPB) and a volatile (DYB) protection bit associated with it. When either bit is 0, the sector is protected from program and erase operations. The PPB bits are protected from program and erase when the PPB Lock bit is “0”. The PPB bits are erased so that all main flash array sectors are unprotected when shipped from factory. There are two methods for managing the state of the PPB Lock bit, Persistent Protection and Password Protection. The Persistent Protection Mode sets the PPB Lock bit to “1” during power up or Hardware Reset so that the PPB bits are unprotected. There is a WRPLB command to clear the PPB Lock bit to “0” to protect the PPB bits. There is no command in the Persistent Protection method to set the PPB Lock bit therefore the PPB Lock bit will remain at “0” until the next power up or Hardware Reset. The Persistent Protection method allows boot code the option of changing sector protection by programming or erasing the PPB, then protecting the PPB from further change for the remainder of normal system operation by clearing the PPB Lock bit. This is sometimes called Boot-code controlled sector protection. The Password Protection Mode requires use of a password to control PPB protection. In the Password Protection Mode, the PPB Lock bit is cleared to “0” during power up or Hardware Reset to protect the PPB bits. A 64-bit password may be permanently programmed and hidden for the Password Protection Mode. The UNPWD command can be used to provide a password for comparison with the hidden password. If the password matches the PPB Lock bit is set to “1” to unprotect the PPB. The WRPLB command can be used to clear the PPB Lock bit to “0”. After clearing the PPB Lock bit to “0”, the UNPWD command can be used again to unprotect the PPB. The selection of the PPB Lock bit management method is made by programming OTP bits in the ASP Register so as to permanently select the method used. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 28 IS25LP256, IS25WP256 Figure 7.1 Advanced Sector/Block Protection ASP Register Bits (OTP) Password Protection Mode (ASPR[2]=0) Persistent Protection Mode (ASPR[1]=0) 64-bit Password (OTP) Dynamic Protection Bit (DYB) Memory Array DYB 0 Sector/Block 0 PPB 0 DYB 1 Sector/Block 1 PPB 1 DYB 2 Sector/Block 2 PPB 2 DYB 3 Sector/Block 3 PPB 3 DYB N-3 Sector/Block N-3 PPB N-3 DYB N-2 Sector/Block PPB N-2 DYB N-1 Sector/Block PPB N-1 DYB N Sector/Block PPB N 1. 0 = Sector/Block Protected 1 = Sector/Block Unprotected 2. The bit is volatile and defaults to “1” (Unprotected) after power up. Persistent Protection Bit (PPB) PPB Lock Bit 1. 0 = PPBs Locked, 1 = PPBs Unlocked 2. The bit is volatile, and defaults to “1” (Persistent Mode) or “0” (Password Mode) upon reset. 3. Programming to “0” locks all PPBs to their current state. 4. Password Method requires a password to set PPB Lock bit to “1” to enable program or erase of PPB bits. 5. Persistent Method only allows PPB Lock bit to be cleared to ‘0’ to prevent program or erase of PPB bits. Power off or hardware reset required to set PPB Lock bit to “1”. 1. 0 = Sector/Block Protected 1 = Sector/Block Unprotected 2. PPBs programmed individually, but erased collectively. Note: N = 542 = 32 (32 Top 4K sectors or 32 Bottom 4K sectors) + 510 (510 64K blocks) Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 29 IS25LP256, IS25WP256 Table 7.2 PPB/DYB and Sector/Block mapping (TPPARM = 0) Block No. (64Kbyte) PPB Group DYB Group PPB 0 : : PPB 15 PPB 16 : : PPB 31 DYB 0 : : DYB 15 DYB 16 : : DYB 31 PPB 32 DYB 32 Block 2 : : : Block 0 Block 1 PPB 284 DYB 284 Block 254 PPB 285 DYB 285 Block 255 : : : PPB 540 DYB 540 Block 510 PPB 541 DYB 541 Block 511 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Sector 0 : : Sector 15 Sector 16 : : Sector 31 Sector 32 : Sector Size (Kbyte) 4 : : 4 4 : : 4 4 : 000000h - 000FFFh : : 00F000h - 00FFFFh 010000h - 010FFFh : : 01F000h - 01FFFFh 020000h - 020FFFh : : Sector 47 : 4 : 02F000h - 02FFFFh : : : Sector 4064 : : Sector 4079 Sector 4080 : : 4 : : 4 4 : : FE0000h – FE0FFFh : : FEF000h – FEFFFFh FF0000h – FF0FFFh : : Sector 4095 4 FFF000h – FFFFFFh : : : Sector 8160 : : Sector 8175 Sector 8176 : : Sector 8191 4 : : 4 4 : : 4 1FE0000h – 1FE0FFFh : : 1FEF000h – 1FEFFFFh 1FF0000h – 1FF0FFFh : : 1FFF000h – 1FFFFFFh Sector No. Address Range 30 IS25LP256, IS25WP256 Table 7.3 PPB/DYB and Sector/Block mapping (TPPARM = 1) PPB Group DYB Group Block No. (64Kbyte) PPB 0 DYB 0 Block 0 PPB 1 DYB 1 Block 1 PPB 2 DYB 2 Block 2 : : : PPB 254 DYB 254 Block 254 PPB 255 DYB 255 Block 255 : : : PPB 510 : : PPB 525 PPB 525 : : PPB 541 DYB 510 : : DYB 525 DYB 526 : : DYB 541 Block 510 Block 511 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Sector 0 : : Sector 15 Sector 16 : : Sector 31 Sector 32 : Sector Size (Kbyte) 4 : : 4 4 : : 4 4 : 000000h - 000FFFh : : 00F000h - 00FFFFh 010000h - 010FFFh : : 01F000h - 01FFFFh 020000h - 020FFFh : : Sector 47 : 4 : 02F000h - 02FFFFh : : : Sector 4064 : : Sector 4079 Sector 4080 : : 4 : : 4 4 : : FE0000h – FE0FFFh : : FEF000h – FEFFFFh FF0000h – FF0FFFh : : Sector 4095 4 FFF000h – FFFFFFh : : : Sector 8160 : : Sector 8175 Sector 8176 : : Sector 8191 4 : : 4 4 : : 4 1FE0000h – 1FE0FFFh : : 1FEF000h – 1FEFFFFh 1FF0000h – 1FF0FFFh : : 1FFF000h – 1FFFFFFh Sector No. Address Range 31 IS25LP256, IS25WP256 Persistent Protection Bits (PPBs) The Persistent Protection Bits (PPBs) are unique for each sector/block and non-volatile (refer to Figure 7.1, Table 7.2, and Table 7.3). It is programmed individually but must be erased as a group, similar to the way individual words may be programmed in the main array but an entire sector/block must be erased at the same time. The PPBs have the same endurances as the Flash memory. Preprogramming and verification prior to erasure are handled by the device, and therefore do not require system monitoring. Programming a PPB bit requires the typical page programming time. Erasing all the PPBs requires typical sector erase time. During PPB bit programming and PPB bit erasing, status is available by reading the Status Register or Extended Read Register. Reading of a PPB bit requires the initial access time of the device. Notes: 1. Each PPB is individually programmed to “0” and all are erased to “1” in parallel. 2. The PPB Lock bit must be cleared first before changing the status of a PPB. 3. While programming PPB, array data cannot be read from any sectors/blocks. 4. When reading the PPB of the desired sector/block the address should be location zero within the sector/block. The high order address bits not used must be zero. 5. There are no means for individually erasing a specific PPB and no specific sector/block address is required for this operation. 6. The state of the PPB for a given sector/block can be verified by using a PPB Read command. 7. When the parts are first shipped, the PPBs are cleared (erased to “1”). Dynamic Protection Bits (DYBs) Dynamic Protection Bits (DYBs) are volatile and unique for each sector/block and can be individually modified. DYBs only control the protection for unprotected sectors/blocks that have their PPBs cleared (erased to “1”). By issuing the Write DYB command, the DYBs are cleared to “0” or set to “1”, thus placing each sector/block in the protected or unprotected state respectively. This feature allows software to easily protect sectors/blocks against inadvertent changes, yet does not prevent the easy removal of protection when changes are needed. The DYBs can be set or cleared as often as needed as they are volatile bits. Persistent Protection Bit (PPB) Lock Bit The PPB Lock bit is a volatile bit for protecting all PPB bits. When cleared to “0”, it locks all PPBs and when set to “1”, it allows the PPBs to be changed. . If the PPB Lock bit is “0”, the PPB Program or Erase command does not execute and fails without programming or erasing the PPB. In Persistent Protection mode, the PPB Lock bit is set to “1” during power up or Hardware Reset. When cleared to “0”, no software command sequence can set the PPB Lock bit to “1”, only another Hardware Reset or powerup can set the PPB Lock bit. In the Password Protection mode, the PPB Lock bit is cleared to “0” during power up or a Hardware Reset during power up or a Hardware Reset during power up or a Hardware Reset. The PPB Lock bit can only be set to “1” by the Password Unlock command. The PPB Lock bit must be cleared to “0” only after all PPBs are configured to the desired settings. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 32 IS25LP256, IS25WP256 Sector/Block Protection States Summary Each sector in specific blocks and each of all other blocks except for the specific blocks can be in one of the following protection states: • Unlocked – The sector/block is unprotected and protection can be changed by a simple command. The protection state defaults to unprotected after a power cycle, software reset, or hardware reset. • Dynamically Locked – A sector/block is protected and protection can be changed by a simple command. The protection state is not saved across a power cycle or reset. • Persistently Locked – A sector/block is protected and protection can only be changed if the PPB Lock bit is set to “1”. The protection state is non-volatile and saved across a power cycle or reset. Changing the protection state requires programming and or erase of the PPB bits. Table 7.4 contains all possible combinations of the DYB, PPB, and PPB Lock bit relating to the status of the sector/block. In summary, if the PPB Lock bit is locked (cleared to “0”), no changes to the PPBs are allowed. The PPB Lock bit can only be unlocked (set to “1”) through a Hardware Reset or power cycle. Table 7.4 Sector/Block Protection States Protection Bit values “0” = Locked or Protected “1” = Unlocked or Unprotected PPB Lock Bit Assigned Sector/Block State PPB DYB 1 1 Unprotected 1 0 Protected 0 1 Protected 0 0 Protected 1 Changeable Changeable 0 NOT changeable Changeable Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 33 IS25LP256, IS25WP256 Persistent Protection Mode The Persistent Protection Mode sets the PPB Lock bit to “1” during power up or Hardware Reset so that the PPB bits are unprotected by a device Hardware Reset. Software Reset does not affect the PPB Lock bit. The WRPLB command can clear the PPB Lock bit to “0” to protect the PPB. There is no command to set the PPB Lock bit therefore the PPB Lock bit will remain at “0” until the next power up or Hardware Reset. Password Protection Mode The Password Protection Mode allows an even higher level of security than the Persistent Protection Mode by requiring a 64-bit password for unlocking the device PPB Lock bit. In addition to this password requirement, after power up or Hardware Reset, the PPB Lock bit is cleared to “0” to maintain the password mode of operation. Successful execution of the Unlock Password command by entering the entire password sets the PPB Lock bit to “1”, allowing for sector/block PPBs modifications. Notes: 1. The password is all “1”s when shipped from Factory. It is located in its own memory space and is accessible through the use of the Program Password and Read Password commands. 2. Once the Password is programmed and verified, the Password Protection Mode Lock Bit (ASPR[2]=0) in ASP Register must be programmed in order to prevent reading or modifying the password. After the Password Protection Mode Lock Bit is programmed, all further Program and Read commands to the password region are disabled and these commands are ignored so that there is no means to verify what the password is. Password verification is only allowed before selecting the Password Protection Mode. 3. The Program Password Command is only capable of programming “0”s. Programming a “1” after a cell is programmed as a “0” results in the cell left as a “0” with no programming error. 4. All 64-bit password combinations are valid as a password. 5. The Protection Mode Lock Bits in ASP Register are not erasable because they are OTP. 6. The exact password must be entered in order for the unlocking function to occur. If the password provided by Unlock Password command does not match the hidden internal password, the unlock operation fails in the same manner as a programming operation on a protected sector/block. The P_ERR and PROT_E are set to 1 and the PPB Lock bit remains cleared to 0. In this case it is a failure to change the state of the PPB Lock bit because it is still protected by the lack of a valid password. 7. The Unlock Password command cannot be accepted any faster than once every 100μs ± 20μs. This makes it take an unreasonably long time (58 million years) for a hacker to run through all the 64-bit combinations in an attempt to correctly match a password. The Read Status Register command or the Read Extended Read Register may be used to read the WIP bit to determine when the device has completed the Unlock Password command or is ready to accept a new password command. When a valid password is provided the Unlock Password command does not insert the 100μs delay before returning the WIP bit to zero. 8. If the password is lost after selecting the Password Protection Mode, there is no way to set the PPB Lock bit. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 34 IS25LP256, IS25WP256 8. DEVICE OPERATION 8.1 COMMAND OVERVIEW The device utilizes an 8-bit instruction register. Refer to Table 8.4. Instruction Set for details on instructions and instruction codes. All instructions, addresses, and data are shifted in with the most significant bit (MSB) first on Serial Data Input (SI) or Serial Data IOs (IO0, IO1, IO2, IO3). The input data on SI or IOs is latched on the rising edge of Serial Clock (SCK) for normal mode and both of rising and falling edges for DTR mode after Chip Enable (CE#) is driven low (VIL). Every instruction sequence starts with a one-byte instruction code and is followed by address bytes and/or dummy cycles (configurable) and/or data bytes, depending on the type of instruction. CE# must be driven high (VIH) after the last bit of the instruction sequence has been shifted in to end the operation. Commands are structured as follows: • Each command begins with a byte (eight bits) instruction. • The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces in the device. The address may be either a 24-bit or 32-bit byte boundary address. • The SPI interface with Multiple IO provides the option for each transfer of address and data information to be done one, two, or four bits in parallel. This enables a tradeoff between the number of signal connections (IO bus width) and the speed of information transfer. If the host system can support a two or four bit wide IO bus the memory performance can be increased by using the instructions that provide parallel two bit (dual) or parallel four bit (quad) transfers. • The width of all transfers following the instruction are determined by the instruction sent. • All single bit or parallel bit groups are transferred in most to least significant bit order. • Some instructions send Mode Bits following the address to indicate that the next command will be of the same type with an implied, rather than an explicit, instruction. The next command thus does not provide an instruction byte, only a new address and mode bits. This reduces the time needed to send each command when the same command type is repeated in a sequence of commands. • The address or Mode Bits may be followed by Dummy Cycles before read data is returned to the host. • Dummy Cycles may be zero to several SCK cycles. In fact, Mode Bits will be counted as a part of Dummy Cycles. • All instruction, address, Mode, and data information is transferred in byte granularity. Addresses are shifted into the device with the Most Significant Byte first. All data is transferred with the lowest address byte sent first. Following bytes of data are sent in lowest to highest byte address order i.e. the byte address increments. • All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded operation. These are discussed in the individual command descriptions. While a program, erase, or write operation is in progress, it is recommended to check that the Write In Progress (WIP) bit is “0” before issuing most commands to the device, to ensure the new command can be accepted. • Depending on the command, the time for execution varies. A command to read status information from an executing command is available to determine when the command completes execution and whether the command was successful. • Following are some general signal relationship descriptions to keep in mind. – The host always controls the Chip Enable (CE#), Serial Clock (SCK), and Serial Input (SI) - SI for single bit wide transfers. The memory drives Serial Output (SO) for single bit read transfers. The host and memory alternately drive the IO0-IO3 signals during Dual and Quad transfers. – All commands begin with the host selecting the memory by driving CE# low before the first rising edge of SCK. CE# is kept low throughout a command and when CE# is returned high the command ends. Generally, CE# remains low for 8-bit transfer multiples to transfer byte granularity information. All commands will not be accepted if CE# is returned high not at an 8-bit boundary. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 35 IS25LP256, IS25WP256 8.2 COMMAND SET SUMMARY Extended Addressing To accommodate addressing above 128Mb (24-bit), there are three options: 1. New instructions with 4-byte (32-bit) address. See Table 8.2. 2. 4-byte addressing with the 3-byte address instructions: For backward compatibility to the 3-byte address instructions, the standard instructions can be used in conjunction with the EXTADD Bit in the Bank Address Register (BAR[7]) or Enter 4-byte Address Mode to switch from 3 bytes to 4 bytes of address field. When EXTADD bit is set to 1 or Enter 4-byte Address Mode command is issued only in the case that EXTADD bit = 0, the instructions are changed to require 4-byte (32bit) for the address field. See Table 8.3. 3. 3-byte addressing with the 3-byte address instructions: For backward compatibility to the 3-byte addressing, the standard instructions can be used in conjunction with the Bank Address Register. See Table 8.3. • The Bank Address Register is used to switch between 128Mbit (16Mbyte) banks of memory, the standard 3-byte address selects an address within the bank selected by the Bank Address Register. o The host system writes the Bank Address Register to access beyond the first 128Mbit of memory. o This applies to read, erase, and program commands. • The Bank Address Register provides the high order (4th) byte of address, which is used to address the available memory at addresses greater than 128Mbit. • Bank Address Register bits are volatile. o On power up, the default is Bank0 (the lowest address 16 Mbytes). • For Read, the device will continuously transfer out data until the end of the array. o There is no bank to bank delay. o The Bank Address Register is not updated. o The Bank Address Register value is used only for the initial address of an access. Table 8.1 Bank Address Map Bank Address Register Bit 0 Bank 0 0 00000000h 00FFFFFFh 1 1 01000000h 01FFFFFFh Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Memory Array Address Range 36 IS25LP256, IS25WP256 Table 8.2 New Instruction Set with 4-byte address Instruction Name Operation Code Address Mode 4NORD 4-byte Address Normal Read Mode 13h 4-byte Address 4FRD 4-byte Address Fast Read Mode 0Ch 4-byte Address 4FRDIO 4-byte Address Fast Read Dual I/O BCh 4-byte Address 4FRDO 4-byte Address Fast Read Dual Output 3Ch 4-byte Address 4FRQIO 4-byte Address Fast Read Quad I/O ECh 4-byte Address 4FRQO 4-byte Address Fast Read Quad Output 6Ch 4-byte Address 4FRDTR 4-byte Address Fast Read DTR Mode 0Eh 4-byte Address 4FRDDTR 4-byte Address Fast Read Dual I/O DTR BEh 4-byte Address 4FRQDTR 4-byte Address Fast Read Quad I/O DTR EEh 4-byte Address 4PP 4-byte Address Serial Input Page Program 12h 4-byte Address 4PPQ 4-byte Address Quad Input Page Program 34h/3Eh 4-byte Address 4SER 4-byte Address Sector Erase 21h 4-byte Address 4BER32 (32KB) 4-byte Address Block Erase 32KB 5Ch 4-byte Address 4BER64 (64KB) 4-byte Address Block Erase 64KB DCh 4-byte Address 4SECUNLOCK 4-byte Address Sector Unlock 25h 4-byte Address 4RDDYB 4-byte Address Read DYB E0 4-byte Address 4WRDYB 4-byte Address Write DYB E1 4-byte Address 4RDPPB 4-byte Address Read PPB E2 4-byte Address 4PGPPB 4-byte Address Program PPB E3 4-byte Address Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 37 IS25LP256, IS25WP256 Table 8.3 Instruction Set with 3-byte or 4-byte address according to EXTADD Bit setting Address Mode Instruction Name Operation Code EXTADD (BAR[7] = 1 EXTADD (BAR[7]) = 0 NORD Normal Read Mode 03h 4-byte Address 3-byte Address FRD Fast Read Mode 0Bh 4-byte Address 3-byte Address FRDIO Fast Read Dual I/O BBh 4-byte Address 3-byte Address FRDO Fast Read Dual Output 3Bh 4-byte Address 3-byte Address FRQIO Fast Read Quad I/O EBh 4-byte Address 3-byte Address FRQO Fast Read Quad Output 6Bh 4-byte Address 3-byte Address FRDTR Fast Read DTR Mode 0Dh 4-byte Address 3-byte Address FRDDTR Fast Read Dual I/O DTR BDh 4-byte Address 3-byte Address FRQDTR Fast Read Quad I/O DTR EDh 4-byte Address 3-byte Address PP Serial Input Page Program 02h 4-byte Address 3-byte Address PPQ Quad Input Page Program 32h/38h 4-byte Address 3-byte Address SER Sector Erase D7h/20h 4-byte Address 3-byte Address BER32 (32KB) Block Erase 32KB 52h 4-byte Address 3-byte Address BER64 (64KB) Block Erase 64KB D8h 4-byte Address 3-byte Address SECUNLOCK Sector Unlock 26h 4-byte Address 3-byte Address RDDYB Read DYB FA 4-byte Address 3-byte Address WRDYB Write DYB FB 4-byte Address 3-byte Address RDPPB Read PPB FC 4-byte Address 3-byte Address PGPPB Program PPB FD 4-byte Address 3-byte Address Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 38 IS25LP256, IS25WP256 Table 8.4 All Instruction Set Instruction Name Operation Mode Byte0 Byte1 Byte2 Byte3 Byte4 NORD Normal Read Mode (3-byte Address) SPI 03h A <23:16> A <15:8> A <7:0> Data out NORD Normal Read Mode (4-byte Address) SPI 03h A <31::24> A <23:16> A <15:8> A <7:0> Data out 4NORD 4-byte Address Normal Read Mode SPI 13h A <31::24> A <23:16> A <15:8> A <7:0> Data out FRD Fast Read Mode (3-byte Address) SPI QPI 0Bh A <23:16> A <15:8> A <7:0> Dummy(1) Byte Data out FRD Fast Read Mode (4-byte Address) SPI QPI 0Bh A <31::24> A <23:16> A <15:8> A <7:0> Dummy(1) Byte Data out 4FRD 4-byte Address Fast Read Mode SPI QPI 0Ch A <31::24> A <23:16> A <15:8> A <7:0> Dummy(1) Byte Data out FRDIO Fast Read Dual I/O (3-byte Address) SPI BBh A <23:16> Dual A <15:8> Dual A <7:0> Dual AXh(1),(2) Dual Dual Data out FRDIO Fast Read Dual I/O (4-byte Address) SPI BBh A <31::24> A <23:16> Dual A <15:8> Dual A <7:0> Dual AXh(1),(2) Dual Dual Data out 4FRDIO 4-byte Address Fast Read Dual I/O SPI BCh A <31::24> A <23:16> Dual A <15:8> Dual A <7:0> Dual AXh(1),(2) Dual Dual Data out FRDO Fast Read Dual Output (3-byte Address) SPI 3Bh A <23:16> A <15:8> A <7:0> Dummy(1) Byte Dual Data out FRDO Fast Read Dual Output (4-byte Address) SPI 3Bh A <31::24> A <23:16> A <15:8> A <7:0> Dummy(1) Byte Dual Data out 4FRDO 4-byte Address Fast Read Dual Output SPI 3Ch A <31::24> A <23:16> A <15:8> A <7:0> Dummy(1) Byte Dual Data out FRQIO Fast Read Quad I/O (3-byte Address) SPI QPI EBh A <23:16> Quad A <15:8> Quad A <7:0> Quad AXh(1), (2) Quad Quad Data out FRQIO Fast Read Quad I/O (4-byte Address) SPI QPI EBh A <31::24> Quad A <23:16> Quad A <15:8> Quad A <7:0> Quad AXh(1), (2) Quad Quad Data out 4FRQIO 4-byte Address Fast Read Quad I/O SPI QPI ECh A <31::24> Quad A <23:16> Quad A <15:8> Quad A <7:0> Quad AXh(1), (2) Quad Quad Data out FRQO Fast Read Quad Output (3-byte Address) SPI 6Bh A <23:16> A <15:8> A <7:0> Dummy(1) Byte Quad Data out FRQO Fast Read Quad Output (4-byte Address) SPI 6Bh A <31::24> A <23:16> A <15:8> A <7:0> Dummy(1) Byte Quad Data out 4FRQO 4-byte Address Fast Read Quad Output SPI 6Ch A <31::24> A <23:16> A <15:8> A <7:0> Dummy(1) Byte Quad Data out Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Byte5 Byte6 39 IS25LP256, IS25WP256 Instruction Name Operation Mode Byte0 Byte1 Byte2 Byte3 Byte4 Byte5 FRDTR Fast Read DTR Mode (3-byte Address) SPI QPI 0Dh A <23:16> A <15:8> A <7:0> Dummy(1) Byte Dual Data out FRDTR Fast Read DTR Mode (4-byte Address) SPI QPI 0Dh A <31::24> A <23:16> A <15:8> A <7:0> Dummy(1) Byte Dual Data out 4FRDTR 4-byte Address Fast Read DTR Mode SPI QPI 0Eh A <31::24> A <23:16> A <15:8> A <7:0> Dummy(1) Byte Dual Data out FRDDTR Fast Read Dual I/O DTR (3-byte Address) SPI BDh A <23:16> Dual A <15:8> Dual A <7:0> Dual AXh(1), (2) Dual Dual Data out FRDDTR Fast Read Dual I/O DTR (4-byte Address) SPI BDh A <31::24> A <23:16> Dual A <15:8> Dual A <7:0> Dual AXh(1), (2) Dual Dual Data out 4FRDDTR 4-byte Address Fast Read Dual I/O DTR SPI BEh A <31::24> A <23:16> Dual A <15:8> Dual A <7:0> Dual AXh(1), (2) Dual Dual Data out FRQDTR Fast Read Quad I/O DTR (3-byte Address) SPI QPI EDh A <23:16> A <15:8> A <7:0> AXh(1), (2) Quad Quad Data out FRQDTR Fast Read Quad I/O DTR (4-byte Address) SPI QPI EDh A <31::24> A <23:16> A <15:8> A <7:0> AXh(1), (2) Quad Quad Data out 4FRQDTR 4-byte Address Fast Read Quad I/O DTR SPI QPI EEh A <31::24> A <23:16> A <15:8> A <7:0> AXh(1), (2) Quad Quad Data out PP Input Page Program (3-byte Address) SPI QPI 02h A <23:16> A <15:8> A <7:0> PD (256byte) PP Input Page Program (4-byte Address) SPI QPI 02h A <31::24> A <23:16> A <15:8> A <7:0> PD (256byte) 4PP 4-byte Address Input Page Program SPI QPI 12h A <31::24> A <23:16> A <15:8> A <7:0> PD (256byte) PPQ Quad Input Page Program (3-byte Address) SPI 32h/38h A <23:16> A <15:8> A <7:0> Quad PD (256byte) PPQ Quad Input Page Program (4-byte Address) SPI 32h/38h A <31::24> A <23:16> A <15:8> A <7:0> Quad PD (256byte) 4PPQ 4-byte Address Quad Input Page Program SPI 34h/3Eh A <31::24> A <23:16> A <15:8> A <7:0> Quad PD (256byte) SER Sector Erase (3-byte Address) SPI QPI D7h/20h A <23:16> A <15:8> A <7:0> SER Sector Erase (4-byte Address) SPI QPI D7h/20h A <31::24> A <23:16> A <15:8> A <7:0> SER 4-byte Address Sector Erase SPI QPI 21h A <31::24> A <23:16> A <15:8> A <7:0> Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Byte6 40 IS25LP256, IS25WP256 Instruction Name Operation Mode Byte0 Byte1 Byte2 Byte3 BER32 (32KB) Block Erase 32Kbyte (3-byte Address) SPI QPI 52h A <23:16> A <15:8> A <7:0> BER32 (32KB) Block Erase 32Kbyte (4-byte Address) SPI QPI 52h A <31::24> A <23:16> A <15:8> A <7:0> 4BER32 (32KB) 4-byte Address Block Erase 32Kbyte SPI QPI 5Ch A <31::24> A <23:16> A <15:8> A <7:0> BER64 (64KB) Block Erase 64Kbyte (3-byte Address) SPI QPI D8h A <23:16> A <15:8> A <7:0> BER64 (64KB) Block Erase 64Kbyte (4-byte Address) SPI QPI D8h A <31::24> A <23:16> A <15:8> A <7:0> BER64 (64KB) 4-byte Address Block Erase 64Kbyte SPI QPI DCh A <31::24> A <23:16> A <15:8> A <7:0> CER Chip Erase SPI QPI C7h/60h WREN Write Enable SPI QPI 06h WRDI Write Disable SPI QPI 04h RDSR Read Status Register SPI QPI 05h Data out WRSR Write Status Register SPI QPI 01h Data in RDFR Read Function Register SPI QPI 48h Data out WRFR Write Function Register SPI QPI 42h Data in QIOEN Enter QPI mode SPI 35h QIODI Exit QPI mode QPI F5h PERSUS Suspend during program/erase SPI QPI 75h/B0h/ 85h PERRSM Resume program/erase SPI QPI 7Ah/30h/ 8Ah DP Deep Power Down SPI QPI B9h RDID, RDPD Read ID / Release Power Down SPI QPI ABh XXh(3) XXh(3) XXh(3) ID7-ID0 SRPNV Set Read Parameters (Non-Volatile) SPI QPI 65h Data in SRPV Set Read Parameters (Volatile) SPI QPI C0h/63h Data in SERPNV Set Extended Read Parameters (Non-Volatile) SPI QPI 85h Data in Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Byte4 Byte5 Byte6 41 IS25LP256, IS25WP256 Instruction Name Operation Mode Byte0 Byte1 SERPV Set Extended Read Parameters (Volatile) SPI QPI 83h Data in RDRP Read Read Parameters (Volatile) SPI QPI 61h Data out RDERP Read Extended Read Parameters (Volatile) SPI QPI 81h Data out CLERP Clear Extended Read Register SPI QPI 82h RDJDID Read JEDEC ID Command SPI 9Fh RDMDID Read Manufacturer & Device ID SPI QPI 90h Read JEDEC ID QPI mode QPI AFh RDJDIDQ Byte2 Byte3 MF7-MF0 ID15-ID8 ID7-ID0 XXh(3) XXh(3) MF7-MF0 (4) ID15-ID8 Byte5 00h MF7-MF0 ID7-ID0 01h ID7-ID0 MF7-MF0 Byte6 ID7-ID0 RDUID Read Unique ID SPI QPI 4Bh A <23:16> A <15:8> A(4) <7:0> Dummy Byte Data out RDSFDP SFDP Read SPI QPI 5Ah A <23:16> A <15:8> A <7:0> Dummy Byte Data out NOP No Operation SPI QPI 00h RSTEN Software Reset Enable SPI QPI 66h RST Software Reset SPI QPI 99h IRER Erase Information Row SPI QPI 64h A <23:16> A <15:8> A <7:0> IRP Program Information Row SPI QPI 62h A <23:16> A <15:8> A <7:0> PD (256byte) IRRD Read Information Row SPI QPI 68h A <23:16> A <15:8> A <7:0> Dummy Byte SECUNLOCK Sector Unlock (3-byte Address) SPI QPI 26h A <23:16> A <15:8> A <7:0> SECUNLOCK Sector Unlock (4-byte Address) SPI QPI 26h A <31::24> A <23:16> A <15:8> A <7:0> 4SECUNLOCK 4-byte Address Sector Unlock SPI QPI 25h A <31::24> A <23:16> A <15:8> A <7:0> SECLOCK Sector Lock SPI QPI 24h RDABR Read AutoBoot Register SPI QPI 14h WRABR Write AutoBoot Register SPI QPI 15h Data in 1 Data in 2 Data in 3 Data in 4 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 (4) Byte4 Data out 42 IS25LP256, IS25WP256 Instruction Name Operation Mode Byte0 Byte1 RDBR Read Bank Address Register (Volatile) SPI QPI 16h/C8h Data out WRBRV Write Bank Address Register (Volatile) SPI QPI 17h/C5h Data in WRBRNV Write Bank Address Register (Non-Volatile) SPI QPI 18h Data in EN4B Enter 4-byte Address Mode SPI QPI B7h EX4B Exit 4-byte Address Mode SPI QPI 29h RDDYB Read DYB (3-byte Address) SPI QPI FAh RDDYB Read DYB (4-byte Address) SPI QPI 4RDDYB 4-byte Address Read DYB WRDYB Byte2 Byte3 Byte4 A <23:16> A <15:8> A <7:0> Data out FAh A <31::24> A <23:16> A <15:8> A <7:0> Data out SPI QPI E0h A <31::24> A <23:16> A <15:8> A <7:0> Data out Write DYB (3-byte Address) SPI QPI FBh A <23:16> A <15:8> A <7:0> Data in WRDYB Write DYB (4-byte Address) SPI QPI FBh A <31::24> A <23:16> A <15:8> A <7:0> Data in 4WRDYB 4-byte Address Write DYB SPI QPI E1h A <31::24> A <23:16> A <15:8> A <7:0> Data in RDPPB Read PPB (3-byte Address) SPI FCh A <23:16> A <15:8> A <7:0> Data out RDPPB Read PPB (4-byte Address) SPI FCh A <31::24> A <23:16> A <15:8> A <7:0> Data out 4RDPPB 4-byte Address Read PPB SPI E2h A <31::24> A <23:16> A <15:8> A <7:0> Data out PGPPB Program PPB (Individually) (3-byte Address) SPI QPI FDh A <23:16> A <15:8> A <7:0> PGPPB Program PPB (Individually) (4-byte Address) SPI QPI FDh A <31::24> A <23:16> A <15:8> A <7:0> 4PGPPB 4-byte Address Program PPB (Individually) SPI QPI E3h A <31::24> A <23:16> A <15:8> A <7:0> ERPPB Erase PPB (as a group) SPI QPI E4h RDASP Read ASP SPI QPI 2Bh Data out (2 byte) PGASP Program ASP SPI QPI 2Fh PD (2 byte) RDPLB Read PPB Lock Bit SPI QPI A7h Data out WRPLB Write PPB Lock Bit SPI QPI A6h SFRZ Set FREEZE bit SPI QPI 91h Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Byte5 Byte6 43 IS25LP256, IS25WP256 Instruction Name Operation Mode Byte0 Byte1 RDPWD Read Password SPI QPI E7h Data out (8 byte) PGPWD Program Password SPI QPI E8h PD (8 byte) UNPWD Unlock Password SPI QPI E9h Data in (8 byte) GBLK Set all DYB bits (Gang Sector/ Block Lock) SPI QPI 7Eh GBUN Clear all DYB bits (Gang Sector/ Block Unlock) SPI QPI 98h Byte2 Byte3 Byte4 Byte5 Byte6 Notes: 1. The number of dummy cycles depends on the value setting in the Table 6.11 Read Dummy Cycles. 2. AXh has to be counted as a part of dummy cycles. X means “don’t care”. 3. XX means “don’t care”. 4. A<23:9> are “don’t care” and A<8:4> are always “0”. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 44 IS25LP256, IS25WP256 8.3 NORMAL READ OPERATION (NORD, 03h or 4NORD, 13h) The Normal Read (NORD) instruction is used to read memory contents at a maximum frequency of 80MHz. • 03h (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 03h (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 13h is followed by a 4-byte address (A31-A0) The Normal Read instruction code is transmitted via the SI line, followed by three (A23 - A0) or four (A31 – A0) address bytes of the first memory location to be read as above. A total of 24 or 32 address bits are shifted in, but only AMSB (Most Significant Bit) - A0 are decoded. The remaining bits (A31 – AMSB+1) are ignored. The first byte addressed can be at any memory location. Upon completion, any data on the SI will be ignored. Refer to Table 8.5 for the related Address Key. The first byte data (D7 - D0) is shifted out on the SO line, MSB first. A single byte of data, or up to the whole memory array, can be read out in one Normal Read instruction. The address is automatically incremented by one after each byte of data is shifted out. The read operation can be terminated at any time by driving CE# high (VIH) after the data comes out. When the highest address of the device is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read in one continuous Read instruction. If the Normal Read instruction is issued while an Erase, Program or Write operation is in process (WIP=1) the instruction is ignored and will not have any effects on the current operation. Table 8.5 Address Key Mode 3 byte address 4 byte address Address AMSB–A0 256Mb A23-A0 A24-A0 (A31-A25=X) Note: X=Don’t Care Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 45 IS25LP256, IS25WP256 Figure 8.1 Normal Read Sequence (03h [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 28 29 30 31 0 SCK Mode 0 3-byte Address SI Instruction = 03h 23 22 ... 21 3 2 1 45 46 47 High Impedance SO CE # 32 33 34 35 36 37 39 38 40 41 42 43 44 ... SCK SI Data Out 1 SO tV 7 6 5 4 3 Data Out 2 2 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 1 0 7 6 5 4 3 2 1 0 ... 46 IS25LP256, IS25WP256 Figure 8.2 Normal Read Sequence (03h [EXTADD=1] or 13h, 4-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 36 ... 37 38 39 2 1 0 54 55 SCK Mode 0 4-byte Address SI Instruction = 03h/13h 23 22 ... 21 3 High Impedance SO CE # 40 41 42 43 44 45 47 46 48 49 50 51 52 53 ... SCK SI Data Out 1 SO tV 7 6 5 4 3 Data Out 2 2 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 1 0 7 6 5 4 3 2 1 0 ... 47 IS25LP256, IS25WP256 8.4 FAST READ OPERATION (FRD, 0Bh or 4FRD, 0Ch) The Fast Read (FRD, 4FRD) instruction is used to read memory data at up to a 166MHz clock. • 0Bh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 0Bh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 0Ch is followed by a 4-byte address (A31-A0) The Fast Read instruction code is followed by three or four address bytes as above and dummy cycles (configurable, default is 8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte from the address is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK. The first byte addressed can be at any memory location. The address is automatically incremented by one after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single Fast Read instruction. The Fast Read instruction is terminated by driving CE# high (VIH). If the Fast Read instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored without affecting the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 48 IS25LP256, IS25WP256 Figure 8.3 Fast Read Sequence (0Bh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 28 29 30 31 SCK Mode 0 3-byte Address SI Instruction = 0Bh 31 30 41 42 29 ... 3 2 1 0 44 45 46 47 ... High Impedance SO CE # 32 33 34 35 36 37 38 39 40 43 SCK SI Dummy Cycles Data Out tV SO 7 6 5 4 3 2 1 0 ... Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 49 IS25LP256, IS25WP256 Figure 8.4 Fast Read Sequence (0Bh [EXTADD=1] or 0Ch, 4-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 36 37 38 39 SCK Mode 0 4-byte Address SI Instruction = 0Bh/0Ch 31 30 49 50 29 ... 3 2 1 0 52 53 54 55 ... High Impedance SO CE # 40 41 42 43 44 45 46 47 48 51 SCK SI Dummy Cycles Data Out tV SO 7 6 5 4 3 2 1 0 ... Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 50 IS25LP256, IS25WP256 FAST READ QPI OPERATION (FRD QPI, 0Bh or 4FRD QPI, 0Ch) The Fast Read QPI (FRD QPI) instruction is used to read memory data at up to a 166MHz clock. • 0Bh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 0Bh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 0Ch is followed by a 4-byte address (A31-A0) The Fast Read QPI instruction code (2 clocks) is followed by three (6 clocks) or four (8 clocks) address bytes as above and 6 dummy cycles (configurable, default is 6 clocks), transmitted via the IO3, IO2, IO1 and IO0 lines, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK. The first byte addressed can be at any memory location. The address is automatically incremented by one after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single Fast Read QPI instruction. The Fast Read QPI instruction is terminated by driving CE# high (VIH). If the Fast Read QPI instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored without affecting the current cycle. The Fast Read QPI sequence is also applied to the commands in the following table 8.6. However, only 3-byte address mode QPI sequence is applied for RDUID, RDSFDP, and IRRD commands. Table 8.6 Instructions that Fast Read QPI sequence is applied to Instruction Name Operation Hex Code FRQIO Fast Read Quad I/O EBh RDUID Read Unique ID 4Bh SFDP Read 5Ah Read Information Row 68h RDSFDP IRRD Figure 8.5 Fast Read QPI Sequence (0Bh [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 ... 13 14 15 16 17 ... SCK Mode 0 tV IO[3:0] 0Bh Instruction 23:20 19:16 15:12 11:8 3-byte Address 7:4 3:0 7:4 6 Dummy Cycles 3:0 Data 1 7:4 3:0 Data 2 Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 51 ... IS25LP256, IS25WP256 Figure 8.6 Fast Read QPI Sequence (0Bh [EXTADD=1] or 0Ch, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 ... 15 16 17 ... SCK Mode 0 tV IO[3:0] 0Bh/0Ch Instruction 31:28 27:24 23:20 19:16 15:12 11:8 7:4 4-byte Address 3:0 7:4 6 Dummy Cycles 3:0 ... Data 1 Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. 8.5 HOLD OPERATION HOLD# is used in conjunction with CE# to select the device. When the device is selected and a serial sequence is underway, HOLD# can be used to pause the serial communication with the master device without resetting the serial sequence. To pause, HOLD# is brought low while the SCK signal is low. To resume serial communication, HOLD# is brought high while the SCK signal is low (SCK may still toggle during HOLD). Inputs to SI will be ignored while SO is in the high impedance state, during HOLD. Note: HOLD is not supported in DTR mode or with QE=1 or when RESET# is selected for the HOLD# or RESET# pin. Timing graph can be referenced in AC Parameters Figure 9.4. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 52 IS25LP256, IS25WP256 8.6 FAST READ DUAL I/O OPERATION (FRDIO, BBh or 4FRDIO, BCh) The Fast Read Dual I/O (FRDIO, 4FRDIO) instruction allows the address bits to be input two bits at a time. This may allow for code to be executed directly from the SPI in some applications. • BBh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • BBh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • BCh is followed by a 4-byte address (A31-A0) The FRDIO/4FRDIO instruction code is followed by three or four address bytes as above and dummy cycles (configurable, default is 4 clocks), transmitted via the IO1 and IO0 lines, with each pair of bits latched-in during the rising edge of SCK. The address MSB is input on IO1, the next bit on IO0, and this shift pattern continues to alternate between the two lines. Depending on the usage of AX read operation mode, a mode byte may be located after address input. The first data byte addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO1, while simultaneously the second bit is output on IO0. Figures 8.7 and 8.8 illustrates the timing sequence. The first byte addressed can be at any memory location. The address is automatically incremented by one after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRDIO/4FRDIO instruction. The FRDIO/4FRDIO instruction is terminated by driving CE# high (VIH). The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8 bits, such as M7 to M0. Four cycles after address input are reserved for Mode bits in FRDIO/4FRDIO execution. M7 to M4 are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it enables the AX read operation and subsequent FRDIO/4FRDIO execution skips command code. It saves cycles as described in Figures 8.9 and 8.10. When the code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles in Table 6.11 includes number of mode bit cycles. If dummy cycles are configured as 4 cycles, data output will start right after mode bit is applied. If the FRDIO/4FRDIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not affect the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 53 IS25LP256, IS25WP256 Figure 8.7 Fast Read Dual I/O Sequence (BBh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 18 19 20 21 SCK Mode 0 4 Dummy Cycles 3-byte Address IO0 Instruction = BBh 22 20 18 ... 2 0 6 4 23 21 19 ... 3 1 7 5 High Impedance IO1 Mode Bits CE # 22 23 24 25 26 27 29 28 30 31 32 33 34 35 36 37 ... SCK tV IO0 2 0 6 4 2 0 6 Data Out 1 IO1 3 1 7 5 3 4 2 0 6 Data Out 2 1 7 5 3 4 2 0 6 4 ... 1 7 5 ... Data Out 3 1 7 5 3 Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 54 IS25LP256, IS25WP256 Figure 8.8 Fast Read Dual I/O Sequence (BBh [EXTADD=1] or BCh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 22 ... 23 24 25 SCK Mode 0 4 Dummy Cycles 4-byte Address IO0 Instruction = BBh/BCh 22 20 18 ... 2 0 6 4 23 21 19 ... 3 1 7 5 High Impedance IO1 Mode Bits CE # 26 27 28 29 30 31 33 32 34 35 36 37 38 39 36 41 ... SCK tV IO0 2 0 6 4 2 0 6 Data Out 1 IO1 3 1 7 5 3 4 2 0 6 Data Out 2 1 7 5 3 4 2 0 6 4 ... 1 7 5 ... Data Out 3 1 7 5 3 Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 55 IS25LP256, IS25WP256 Figure 8.9 Fast Read Dual I/O AX Read Sequence (BBh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 ... 11 12 13 14 15 16 17 18 19 20 ... 21 SCK Mode 0 4 Dummy Cycles 3-byte Address tV Data Out 2 Data Out 1 IO0 22 20 18 ... 2 0 6 4 2 0 6 4 2 0 6 4 ... IO1 23 21 19 ... 3 1 7 5 3 1 7 5 3 1 7 5 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Figure 8.10 Fast Read Dual I/O AX Read Sequence (BBh [EXTADD=1] or BCh, 4-byte address) CE # Mode 3 0 1 2 3 ... 15 16 17 18 19 20 21 22 23 24 ... 25 SCK Mode 0 4 Dummy Cycles 4-byte Address tV Data Out 2 Data Out 1 IO0 30 28 26 ... 2 0 6 4 2 0 6 4 2 0 6 4 ... IO1 31 29 27 ... 3 1 7 5 3 1 7 5 3 1 7 5 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 56 IS25LP256, IS25WP256 8.7 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh or 4FRDO, 3Ch) The FRDO/4FRDO instruction is used to read memory data on two output pins each at up to a 166MHz clock. • 3Bh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 3Bh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 3Ch is followed by a 4-byte address (A31-A0) The FRDO/4FRDO instruction code is followed by three or four address bytes as above and dummy cycles (configurable, default is 8 clocks), transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency f CT, during the falling edge of SCK. The first bit (MSB) is output on IO1. Simultaneously, the second bit is output on IO0. The first byte addressed can be at any memory location. The address is automatically incremented by one after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRDO/4FRDO instruction. The instruction FRDO/4FRDO is terminated by driving CE# high (VIH). If the FRDO/4FRDO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not have any effects on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 57 IS25LP256, IS25WP256 Figure 8.11 Fast Read Dual Output Sequence (3Bh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 28 29 30 31 SCK Mode 0 3-byte Address IO0 Instruction = 3Bh 23 22 41 42 21 ... 3 2 1 0 44 45 46 47 ... High Impedance IO1 CE # 32 33 34 35 36 37 38 39 40 43 SCK tV IO0 6 2 0 6 Data Out 1 8 Dummy Cycles IO1 4 7 5 3 4 2 0 ... 1 ... Data Out 2 1 7 5 3 Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 58 IS25LP256, IS25WP256 Figure 8.12 Fast Read Dual Output Sequence (3Bh [EXTADD=1] or 3Ch, 4-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 36 37 38 39 SCK Mode 0 4-byte Address IO0 Instruction = 3Bh/3Ch 23 22 49 50 21 ... 3 2 1 0 52 53 54 55 ... High Impedance IO1 CE # 40 41 42 43 44 45 46 47 48 51 SCK tV IO0 6 2 0 6 Data Out 1 8 Dummy Cycles IO1 4 7 5 3 4 2 0 ... 1 ... Data Out 2 1 7 5 3 Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 59 IS25LP256, IS25WP256 8.8 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh or 4FRQO 6Ch) The FRQO/4FRQO instruction is used to read memory data on four output pins each at up to a 166 MHz clock. • 6Bh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 6Bh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 6Ch is followed by a 4-byte address (A31-A0) The FRQO/4FRQO instruction code is followed by three or four address bytes as above and dummy cycles (configurable, default is 8 clocks), transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. The first byte addressed can be at any memory location. The address is automatically incremented after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRQO/4FRQO instruction. FRQO/4FRQO instruction is terminated by driving CE# high (VIH). If a FRQO/4FRQO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not have any effects on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 60 IS25LP256, IS25WP256 Figure 8.13 Fast Read Quad Output Sequence (6Bh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 28 29 30 31 SCK Mode 0 3-byte Address IO0 Instruction = 6Bh 23 22 41 42 21 ... 3 2 1 0 44 45 46 47 ... High Impedance IO1 High Impedance IO2 High Impedance IO3 CE # 32 33 34 35 36 37 38 39 40 43 SCK tV IO0 4 8 Dummy Cycles 0 4 0 4 0 4 0 ... Data Out 1 Data Out 2 Data Out 3 Data Out 4 IO1 5 1 5 1 5 1 5 1 ... IO2 6 2 6 2 6 2 6 2 ... IO3 7 3 7 3 7 3 7 3 ... Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 61 IS25LP256, IS25WP256 Figure 8.14 Fast Read Quad Output Sequence (6Bh [EXTADD=1] or 6Ch, 4-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 36 37 38 39 SCK Mode 0 4-byte Address IO0 Instruction = 6Bh/6Ch 31 30 29 ... 3 2 1 0 52 53 54 55 ... High Impedance IO1 High Impedance IO2 High Impedance IO3 CE # 40 41 42 43 44 45 46 47 48 49 50 51 SCK tV IO0 4 8 Dummy Cycles 0 4 0 4 0 4 0 ... Data Out 1 Data Out 2 Data Out 3 Data Out 4 IO1 5 1 5 1 5 1 5 1 ... IO2 6 2 6 2 6 2 6 2 ... IO3 7 3 7 3 7 3 7 3 ... Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 62 IS25LP256, IS25WP256 8.9 FAST READ QUAD I/O OPERATION (FRQIO, EBh or 4FRQIO, ECh) The FRQIO/4FRQIO instruction allows the address bits to be input four bits at a time. This may allow for code to be executed directly from the SPI in some applications. • EBh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • EBh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • ECh is followed by a 4-byte address (A31-A0) The FRQIO/4FRQIO instruction code is followed by three or four address bytes as above and dummy cycles (configurable, default is 6 clocks), transmitted via the IO3, IO2, IO1 and IO0 lines, with each group of four bits latched-in during the rising edge of SCK. The address of MSB inputs on IO3, the next bit on IO2, the next bit on IO1, the next bit on IO0, and continue to shift in alternating on the four. Depending on the usage of AX read operation mode, a mode byte may be located after address input. The first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. Figures 8.15 and 8.16 illustrates the timing sequence. The first byte addressed can be at any memory location. The address is automatically incremented after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRQIO/4FRQIO instruction. FRQIO/4FRQIO instruction is terminated by driving CE# high (VIH). The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8 bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO/4FRQIO execution. M7 to M4 are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it enables the AX read operation and subsequent FRQIO/4FRQIO execution skips command code. It saves cycles as described in Figures 8.17 and 8.18. When the code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles in Table 6.11 includes number of mode bit cycles. If dummy cycles are configured as 6 cycles, data output will start right after mode bits and 4 additional dummy cycles are applied. If the FRQIO/4FRQIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not have any effects on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 63 IS25LP256, IS25WP256 Figure 8.15 Fast Read Quad I/O Sequence (EBh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 SCK Mode 0 3-byte Address IO0 20 16 12 8 4 0 4 0 21 17 13 9 5 1 5 1 IO2 22 18 14 10 6 2 6 2 IO3 23 19 15 11 7 3 7 3 Instruction = EBh High Impedance IO1 Mode Bits CE # 16 17 18 19 20 21 23 22 24 25 26 27 28 29 30 31 ... SCK 6 Dummy Cycles tV Data Out 1 Data Out 2 Data Out 3 Data Out 4 Data Out 5 Data Out 6 IO0 4 0 4 0 4 0 4 0 4 0 4 0 ... IO1 5 1 5 1 5 1 5 1 5 1 5 1 ... 6 2 6 2 6 2 6 2 6 2 6 2 ... 7 3 7 3 7 3 7 3 7 3 7 3 ... IO2 IO3 Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 64 IS25LP256, IS25WP256 Figure 8.16 Fast Read Quad I/O Sequence (EBh [EXTADD=1] or ECh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 SCK Mode 0 4-byte Address IO0 28 24 20 16 12 8 4 0 29 25 21 17 13 9 5 1 IO2 30 26 22 18 14 10 6 2 IO3 31 27 23 19 15 11 7 3 25 26 27 28 29 30 31 ... Instruction = EBh/ECh High Impedance IO1 CE # 16 17 18 19 20 21 23 22 24 SCK 6 Dummy Cycles tV Data Out 1 Data Out 2 Data Out 3 Data Out 4 Data Out 5 IO0 4 0 4 0 4 0 4 0 4 0 4 0 ... IO1 5 1 5 1 5 1 5 1 5 1 5 1 ... 6 2 6 2 6 2 6 2 6 2 6 2 ... 7 3 7 3 7 3 7 3 7 3 7 3 ... IO2 IO3 Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 65 IS25LP256, IS25WP256 Figure 8.17 Fast Read Quad I/O AX Read Sequence (EBh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 ... 15 SCK Mode 0 6 Dummy Cycles 3-byte Address tV Data Out 1 Data Out 2 IO0 20 16 12 8 4 0 4 0 4 0 4 0 ... IO1 21 17 13 9 5 1 5 1 5 1 5 1 ... IO2 22 18 14 10 6 2 6 2 6 2 6 2 ... IO3 23 19 15 11 7 3 7 3 7 3 7 3 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 66 IS25LP256, IS25WP256 Figure 8.18 Fast Read Quad I/O AX Read Sequence (EBh [EXTADD=1] or ECh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 ... 15 SCK Mode 0 6 Dummy Cycles 4-byte Address tV Data Out 1 IO0 28 24 20 16 12 8 4 0 4 0 4 0 ... IO1 29 25 21 17 13 9 5 1 5 1 5 1 ... IO2 30 26 22 18 14 10 6 2 6 2 6 2 ... IO3 31 27 23 19 15 11 7 3 7 3 7 3 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 67 IS25LP256, IS25WP256 FAST READ QUAD I/O QPI OPERATION (FRQIO QPI, EBh or 4FRQIO QPI, ECh) The FRQIO/4FRQIO QPI instruction is used to read memory data at up to a 166MHz clock. The FRQIO/4FRQIO QPI instruction utilizes all four IO lines to input the instruction code so that only two clocks are required, while the FRQIO/4FRQIO instruction requires that the byte-long instruction code is shifted into the device only via IO0 line in eight clocks. As a result, 6 command cycles will be reduced by the FRQIO/4FRQIO QPI instruction. In addition, subsequent address and data out are shifted in/out via all four IO lines like the FRQIO/4FRQIO instruction. In fact, except for the command cycle, the FRQIO/4FRQIO QPI operation is exactly same as the FRQIO/4FRQIO. A Quad Enable (QE) bit of Status Register must be set to "1" before sending the FRQIO/4FRQIO QPI instruction. The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8 bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO/4FRQIO execution. M7 to M4 are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it enables the AX read operation and subsequent FRQIO/4FRQIO execution skips command code. It saves cycles as described in Figures 8.17 and 8.18. When the code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles in Table 6.11 includes number of mode bit cycles. If dummy cycles are configured as 6 cycles, data output will start right after mode bits and 4 additional dummy cycles are applied. If the FRQIO/4FRQIO QPI instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not have any effects on the current cycle. Figure 8.19 Fast Read Quad I/O QPI Sequence (EBh [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 ... 13 14 15 16 17 ... SCK Mode 0 Mode Bits IO[3:0] EBh Instruction 23:20 19:16 15:12 11:8 3-byte Address 7:4 3:0 7:4 3:0 6 Dummy Cycles tV 7:4 3:0 Data 1 7:4 3:0 ... Data 2 Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 68 IS25LP256, IS25WP256 Figure 8.20 Fast Read Quad I/O QPI Sequence (EBh [EXTADD=1] or ECh, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 ... 15 16 17 ... SCK Mode 0 Mode Bits IO[3:0] EBh/ECh 31:28 27:24 23:20 18:16 15:12 11:8 Instruction 4-byte Address 7:4 3:0 7:4 3:0 6 Dummy Cycles tV 7:4 3:0 ... Data 1 Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 69 IS25LP256, IS25WP256 8.10 PAGE PROGRAM OPERATION (PP, 02h or 4PP, 12h) The Page Program (PP/4PP) instruction allows up to 256 bytes data to be programmed into memory in a single operation. The destination of the memory to be programmed must be outside the protected memory area set by the Block Protection bits (BP3, BP2, BP1, BP0) or ASP. A PP/4PP instruction which attempts to program into a page that is write-protected will be ignored. Before the execution of PP/4PP instruction, the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction. • 02h (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 02h (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 12h is followed by a 4-byte address (A31-A0) The PP/4PP instruction code, three or four address bytes as above and program data (1 to 256 bytes) are input via the SI line. Program operation will start immediately after the CE# is brought high, otherwise the PP/4PP instruction will not be executed. The internal control logic automatically handles the programming voltages and timing. During a program operation, all instructions will be ignored except the RDSR instruction. The progress or completion of the program operation can be determined by reading the WIP bit. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed. If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously latched data are discarded, and the last 256 bytes are kept to be programmed into the page. The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A byte cannot be reprogrammed without first erasing the whole sector or block. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 70 IS25LP256, IS25WP256 Figure 8.21 Page Program Sequence (02h [EXTADD=0], 3-byte address) 1 ... 7 8 9 ... 31 32 33 ... 39 ... ... 2079 Mode 3 0 2072 CE # SCK Mode 0 SI Data In 1 3-byte Address Instruction = 02h 23 22 ... 0 7 6 ... Data In 256 0 ... 7 ... 0 High Impedance SO Figure 8.22 Page Program QPI Sequence (02h [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ... 7:4 3:0 7:4 3:0 7:4 3:0 7:4 3:0 7:4 3:0 ... SCK Mode 0 IO[3:0] 02h 23:20 19:16 15:12 11:8 3-byte Address Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Data In 1 Data In 2 Data In 3 Data In 4 71 IS25LP256, IS25WP256 Figure 8.23 Page Program Sequence (02h [EXTADD=1] or 12h, 4-byte address) 1 ... 7 8 9 ... 39 40 41 ... 47 ... ... 2087 Mode 3 0 2080 CE # SCK Mode 0 SI Data In 1 4-byte Address Instruction = 02h/12h 31 30 ... 0 7 6 ... Data In 256 0 ... 7 ... 0 High Impedance SO Figure 8.24 Page Program QPI Sequence (02h [EXTADD=1] or 12h, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ... 7:4 3:0 7:4 3:0 7:4 3:0 7:4 3:0 ... SCK Mode 0 IO[3:0] 02h/12h 31:28 27:24 23:20 19:16 15:12 11:8 4-byte Address Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Data In 1 Data In 2 Data In 3 72 IS25LP256, IS25WP256 8.11 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h or 4PPQ, 34h/3Eh) The Quad Input Page Program instruction allows up to 256 bytes data to be programmed into memory in a single operation with four pins (IO0, IO1, IO2 and IO3). The destination of the memory to be programmed must be outside the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits or ASP. A Quad Input Page Program instruction which attempts to program into a page that is write-protected will be ignored. Before the execution of Quad Input Page Program instruction, the QE bit in the Status Register must be set to “1” and the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction. • 32h/38h (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 32h/38h (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 34h/3Eh is followed by a 4-byte address (A31-A0) The Quad Input Page Program instruction code, three or four address bytes as above and program data (1 to 256 bytes) are input via the four pins (IO0, IO1, IO2 and IO3). Program operation will start immediately after the CE# is brought high, otherwise the Quad Input Page Program instruction will not be executed. The internal control logic automatically handles the programming voltages and timing. During a program operation, all instructions will be ignored except the RDSR instruction. The progress or completion of the program operation can be determined by reading the WIP bit. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed. If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously latched data are discarded, and the last 256 bytes data are kept to be programmed into the page. The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A byte cannot be reprogrammed without first erasing the whole sector or block. Figure 8.25 Quad Input Page Program operation (32h/38h [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 ... 31 32 33 34 35 ... SCK Mode 0 3-byte Address Data In 1 Data In 2 4 0 4 0 ... 5 1 5 1 ... IO2 6 2 6 2 ... IO3 7 3 7 3 ... IO0 IO1 Instruction = 32h/38h High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 23 22 ... 0 73 IS25LP256, IS25WP256 Figure 8.26 Quad Input Page Program operation (32h/38h [EXTADD=1] or 34h/3Eh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 ... 39 40 41 42 43 ... SCK Mode 0 4-byte Address Data In 1 Data In 2 4 0 4 0 ... 5 1 5 1 ... IO2 6 2 6 2 ... IO3 7 3 7 3 ... IO0 IO1 Instruction = 32h/38h/34h/3Eh High Impedance 31 30 ... 0 8.12 ERASE OPERATION The memory array of the device is organized into uniform 4 Kbyte sectors or 32/64 Kbyte uniform blocks (a block consists of eight/sixteen adjacent sectors respectively). Before a byte is reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to “1”). In order to erase the device, there are three erase instructions available: Sector Erase (SER), Block Erase (BER), and Chip Erase (CER). A sector erase operation allows any individual sector to be erased without affecting the data in other sectors. A block erase operation erases any individual block. A chip erase operation erases the whole memory array of a device. A sector erase, block erase, or chip erase operation can be executed prior to any programming operation. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 74 IS25LP256, IS25WP256 8.13 SECTOR ERASE OPERATION (SER, D7h/20h or 4SER, 21h) A Sector Erase (SER/4SER) instruction erases a 4 Kbyte sector before the execution of a SER/4SER instruction, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically reset after the completion of Sector Erase operation. • D7h/20h (EXTADD=0) is followed by a 3-byte address (A23-A0) or • D7h/20h (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 21h is followed by a 4-byte address (A31-A0) A SER/4SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire instruction sequence The SER/4SER instruction code, and three or four address bytes as above are input via SI. Erase operation will start immediately after CE# is pulled high. The internal control logic automatically handles the erase voltage and timing. During an erase operation, all instruction will be ignored except Read Status Register, Read Extended Read Register, Erase/Program Suspend, and Software/Hardware Reset instructions. The progress or completion of the erase operation can be determined by reading the WIP bit. If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been completed. Figure 8.27 Sector Erase Sequence (D7h/20h [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 1 0 SCK Mode 0 3-byte Address SI SO Instruction = D7h/20h 23 22 21 ... 3 2 High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 75 IS25LP256, IS25WP256 Figure 8.28 Sector Erase Sequence (D7h/20h [EXTADD=1] or 21h, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 36 37 38 39 1 0 SCK Mode 0 4-byte Address SI Instruction = D7h/20h/21h 31 30 29 ... 3 2 High Impedance SO Figure 8.29 Sector Erase QPI Sequence (D7h/20h [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 7:4 3:0 SCK Mode 0 3-byte Address D7h/20h IO[3:0] 23:20 19:16 15:12 11:8 Figure 8.30 Sector Erase QPI Sequence (D7h/20h [EXTADD=1] or 21h, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 7:4 3:0 SCK Mode 0 IO[3:0] 4-byte Address D7h/ 20h/21h 31:28 27:24 23:20 19:16 15:12 11:8 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 76 IS25LP256, IS25WP256 8.14 BLOCK ERASE OPERATION (BER32K:52h or 4BER32K:5Ch, BER64K:D8h or 4BER64K:DCh) A Block Erase (BER) instruction erases a 32/64 Kbyte block. Before the execution of a BER instruction, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically after the completion of a block erase operation. • 52h/D8h (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 52h/D8h (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 5Ch/DCh is followed by a 4-byte address (A31-A0) The BER instruction code and three or four address bytes as above are input via SI. Erase operation will start immediately after the CE# is pulled high, otherwise the BER instruction will not be executed. The internal control logic automatically handles the erase voltage and timing. Figure 8.31 Block Erase (64K) Sequence (D8h [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 2 1 0 37 38 39 2 1 0 SCK Mode 0 3-byte Address SI Instruction = D8h 23 22 21 ... 3 High Impedance SO Figure 8.32 Block Erase (64K) Sequence (D8h [EXTADD=1] or DCh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 36 SCK Mode 0 4-byte Address SI SO Instruction = D8h/DCh 31 29 28 ... 3 High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 77 IS25LP256, IS25WP256 Figure 8.33 Block Erase (64K) QPI Sequence (D8h [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 7:4 3:0 SCK Mode 0 3-byte Address D8h IO[3:0] 23:20 19:16 15:12 11:8 Figure 8.34 Block Erase (64K) QPI Sequence (D8h [EXTADD=1] or DCh, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 7:4 3:0 SCK Mode 0 4-byte Address D8h/DCh IO[3:0] 31:28 27:24 23:20 19:16 15:12 11:8 Figure 8.35 Block Erase (32K) Sequence (52h [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 2 1 0 SCK Mode 0 3-byte Address SI SO Instruction = 52h 23 22 21 ... 3 High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 78 IS25LP256, IS25WP256 Figure 8.36 Block Erase (32K) Sequence (52h [EXTADD=1] or 5Ch, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 36 37 38 39 2 1 0 SCK Mode 0 4-byte Address SI Instruction = 52h/5Ch 31 29 28 ... 3 High Impedance SO Figure 8.37 Block Erase (32K) QPI Sequence (52h [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 7:4 3:0 SCK Mode 0 3-byte Address 52h IO[3:0] 23:20 19:16 15:12 11:8 Figure 8.38 Block Erase (32K) QPI Sequence (52h [EXTADD=1] or 5Ch, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 7:4 3:0 SCK Mode 0 IO[3:0] 4-byte Address 52h/5Ch 31:28 27:24 23:20 19:16 15:12 11:8 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 79 IS25LP256, IS25WP256 8.15 CHIP ERASE OPERATION (CER, C7h/60h) A Chip Erase (CER) instruction erases the entire memory array. Before the execution of CER instruction, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is automatically reset after completion of a chip erase operation. The CER instruction code is input via the SI. Erase operation will start immediately after CE# is pulled high, otherwise the CER instruction will not be executed. The internal control logic automatically handles the erase voltage and timing. Figure 8.39 Chip Erase Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 SI Instruction = C7h/60h SO High Impedance Figure 8.40 Chip Erase QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 C7h/60h 80 IS25LP256, IS25WP256 8.16 WRITE ENABLE OPERATION (WREN, 06h) The Write Enable (WREN) instruction is used to set the Write Enable Latch (WEL) bit. The WEL bit is reset to the write-protected state after power-up. The WEL bit must be write enabled before any write operation, including Sector Erase, Block Erase, Chip Erase, Page Program, Program Information Row, Write Status Register, Write Function Register, Set Non-Volatile Read Register, Set Non-Volatile Extended Read Register, and Write Autoboot Register operations except for Set Volatile Read Register and Set Volatile Extended Read Register. The WEL bit will be reset to the write-protected state automatically upon completion of a write operation. The WREN instruction is required before any above operation is executed. Figure 8.41 Write Enable Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 06h SI High Impedance SO Figure 8.42 Write Enable QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 06h 81 IS25LP256, IS25WP256 8.17 WRITE DISABLE OPERATION (WRDI, 04h) The Write Disable (WRDI) instruction resets the WEL bit and disables all write instructions. The WRDI instruction is not required after the execution of a write instruction, since the WEL bit is automatically reset. Figure 8.43 Write Disable Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 04h SI High Impedance SO Figure 8.44 Write Disable QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 04h 82 IS25LP256, IS25WP256 8.18 READ STATUS REGISTER OPERATION (RDSR, 05h) The Read Status Register (RDSR) instruction provides access to the Status Register. During the execution of a program, erase or Write Status Register operation, the RDSR instruction will be executed, which can be used to check the progress or completion of an operation by reading the WIP bit. Figure 8.45 Read Status Register Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 05h tV SO Data Out 7 6 5 4 3 2 1 0 Figure 8.46 Read Status Register QPI Sequence CE# Mode 3 0 2 1 3 SCK Mode 0 tV IO[3:0] 05h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 83 IS25LP256, IS25WP256 8.19 WRITE STATUS REGISTER OPERATION (WRSR, 01h) The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and Status Register write protection features by writing “0”s or “1”s into the non-volatile BP3, BP2, BP1, BP0, and SRWD bits. Also WRSR instruction allows the user to disable or enable quad operation by writing “0” or “1” into the non-volatile QE bit. Figure 8.47 Write Status Register Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 Data In SI SO Instruction = 01h 7 6 2 3 7:4 3:0 5 4 3 High Impedence Figure 8.48 Write Status Register QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] 01h Data In Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 84 IS25LP256, IS25WP256 8.20 READ FUNCTION REGISTER OPERATION (RDFR, 48h) The Read Function Register (RDFR) instruction provides access to the Function Register. Refer to Table 6.6 Function Register Bit Definition for more detail. Figure 8.49 Read Function Register Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 48h tV SO Data Out 7 6 5 4 3 2 1 0 Figure 8.50 Read Function Register QPI Sequence CE# Mode 3 0 1 2 3 SCK Mode 0 tV IO[3:0] 48h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 85 IS25LP256, IS25WP256 8.21 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h) The Write Function Register (WRFR) instruction allows the user to enable or disable additional RESET# pin (pin3) by writing into RESET# Enable/Disable bit and lock or unlock the Information Row by writing “0”s (IR Lock) or “1”s (IR Unlock) into IRL3, IRL2, IRL1, IRL0. Figure 8.51 Write Function Register Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 Data In SI SO Instruction = 42h 7 6 2 3 7:4 3:0 5 4 3 High Impedence Figure 8.52 Write Function Register QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] 42h Data In Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 86 IS25LP256, IS25WP256 8.22 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QIOEN,35h; QIODI,F5h) The Enter Quad I/O (QIOEN) instruction, 35h, enables the Flash device for QPI bus operation. Upon completion of the instruction, all instructions thereafter will be 4-bit multiplexed input/output until a power cycle or an Exit Quad I/O instruction is sent to device. The Exit Quad I/O instruction, F5h, resets the device to 1-bit SPI protocol operation. To execute an Exit Quad I/O operation, the host drives CE# low, sends the Exit Quad I/O command cycle, then drives CE# high. The device just accepts QPI (2 clocks) command cycles. Figure 8.53 Enter Quad Peripheral Interface (QPI) Mode Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 35h SI High Impedance SO Figure 8.54 Exit Quad Peripheral Interface (QPI) Mode Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 F5h 87 IS25LP256, IS25WP256 8.23 PROGRAM/ERASE SUSPEND & RESUME The device allows the interruption of Sector Erase, Block Erase, or Page Program operations to conduct other operations. 75h/B0h/85h command for suspend and 7Ah/30h/8Ah for resume will be used. (SPI/QPI all acceptable) Function Register bit2 (PSUS) and bit3 (ESUS) are used to check whether or not the device is in suspend mode. Suspend to read ready timing: 100µs Resume to another suspend timing: 400µs PROGRAM/ERASE SUSPEND DURING SECTOR-ERASE OR BLOCK-ERASE (PERSUS 75h/B0h/85h) The Program/Erase Suspend allows the interruption of Sector Erase and Block Erase operations. After the Program/Erase Suspend, program, read related, resume and reset commands can be accepted. It is possible to nest a Program/Erase Suspend operation during a Program inside a Program/Erase Suspend operation. Refer to Table 8.7 for more detail. To execute the Program/Erase Suspend operation, the host drives CE# low, sends the Program/Erase Suspend command cycle (75h/B0h/85h), then drives CE# high. The Function Register indicates that the Erase has been suspended by changing the ESUS bit from “0” to “1”, but the device will not accept another command until it is ready. To determine when the device will accept a new command, poll the WIP bit or wait the specified time tSUS. When ESUS bit is issued, the Write Enable Latch (WEL) bit will be reset. PROGRAM/ERASE SUSPEND DURING PAGE PROGRAMMING (PERSUS 75h/B0h/85h) The Program/Erase Suspend allows the interruption of an array Program operation. After the Program/Erase Suspend command, WEL bit will be disabled, therefore only read related, resume and reset commands can be accepted. Refer to Table 8.7 for more detail. To execute the Program/Erase Suspend operation, the host drives CE# low, sends the Program/Erase Suspend command cycle (75h/B0h/85h), then drives CE# high. The Function Register indicates that the programming has been suspended by changing the PSUS bit from “0” to “1”, but the device will not accept another command until it is ready. To determine when the device will accept a new command, poll the WIP bit or wait the specified time tSUS. PROGRAM/ERASE RESUME (PERRSM 7Ah/30h/8Ah) The Program/Erase Resume restarts the Program or Erase command that was suspended, and changes the suspend status bit in the Function Register (ESUS or PSUS bits) back to “0”. To execute the Program/Erase Resume operation, the host drives CE# low, sends the Program/Erase Resume command cycle (7Ah/30h/8Ah), then drives CE# high. A cycle is two nibbles long, most significant nibble first. To determine if the internal, selftimed Write operation completed, poll the WIP bit, or wait the specified time tSE, tBE or tPP for Sector Erase, Block Erase, or Page Programming, respectively. The total write time before suspend and after resume will not exceed the uninterrupted write times tSE, tBE or tPP. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 88 IS25LP256, IS25WP256 Table 8.7 Instructions accepted during Suspend Operation Suspended Instruction Allowed Name Hex Code Operation Program or Erase NORD 03h Normal Read Mode Program or Erase 4NORD 13h 4-byte Address Normal Read Mode Program or Erase FRD 0Bh Fast Read Mode Program or Erase 4FRD 0Ch 4-byte Address Fast Read Mode Program or Erase FRDIO BBh Fast Read Dual I/O Program or Erase 4FRDIO BCh 4-byte Address Fast Read Dual I/O Program or Erase FRDO 3Bh Fast Read Dual Output Program or Erase 4FRDO 3Ch 4-byte Address Fast Read Dual Output Program or Erase FRQIO EBh Fast Read Quad I/O Program or Erase 4FRQIO ECh 4-byte Address Fast Read Quad I/O Program or Erase FRQO 6Bh Fast Read Quad Output Program or Erase 4FRQO 6Ch 4-byte Address Fast Read Quad Output Program or Erase FRDTR 0Dh Fast Read DTR Mode Program or Erase 4FRDTR 0Eh 4-byte Address Fast Read DTR Mode Program or Erase FRDDTR BDh Fast Read Dual I/O DTR Program or Erase 4FRDDTR BEh 4-byte Address Fast Read Dual I/O DTR Program or Erase FRQDTR EDh Fast Read Quad I/O DTR Program or Erase 4FRQDTR EEh 4-byte Address Fast Read Quad I/O DTR Erase PP 02h Serial Input Page Program Erase 4PP 12h 4-byte Address Serial Input Page Program Erase PPQ 32h/38h Quad Input Page Program Erase 4PPQ 34h/3Eh 4-byte Address Quad Input Page Program Erase WREN 06h Write Enable Program or Erase RDSR 05h Read Status Register Program or Erase RDFR 48h Read Function Register Erase CLERP 82h Clear Extended Read Register Program or Erase PERRSM 7Ah/30h/8Ah Program/Erase Resume Erase PERSUS 75h/B0h/85h Program/Erase Suspend Program or Erase RDID ABh Program or Erase SRPV C0/63h Program or Erase SERPV 83h Set Extended Read Parameters (Volatile) Program or Erase RDRP 61h Read Read Parameters (Volatile) Program or Erase RDERP 81h Read Extended Read Parameters (Volatile) Program or Erase RDJDID 9Fh Read Manufacturer and Product ID by JEDEC ID Command Program or Erase RDMDID 90h Read Manufacturer and Device ID Program or Erase RDJDIDQ AFh Read JEDEC ID QPI mode Program or Erase RDUID 4Bh Read Unique ID Number Program or Erase RDSFDP 5Ah SFDP Read Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Read Manufacturer and Product ID Set Read Parameters (Volatile) 89 IS25LP256, IS25WP256 Instruction Allowed Operation Suspended Name Hex Code Program or Erase NOP 00h No Operation Program or Erase RSTEN 66h Software reset enable Program or Erase RST 99h Reset (Only along with RSTEN 66h) Program or Erase IRRD 78h Read Information Row Erase SECUNLOCK 26h Sector Unlock Erase 4SECUNLOCK 25h 4-byte Address Sector Unlock Erase SECLOCK 24h Sector Lock Program or Erase RDABR E1h Read AutoBoot Register Program or Erase RDBR 16h/C8h Read Bank Address Register Program or Erase WRBRV 17h/C5h Write Volatile Bank Address Register Program or Erase EN4B Program or Erase Erase Operation B7h Enter 4-byte Address Mode EX4B 29h Exit 4-byte Address Mode RDDYB FAh Read DYB Erase 4RDDYB E0h 4-byte Address Read DYB Erase WRDYB FBh Write DYB Erase 4WRDYB E1h 4-byte Address Write DYB Erase RDPPB FCh Read PPB Erase 4RDPPB E2h 4-byte Address Read PPB Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 90 IS25LP256, IS25WP256 8.24 ENTER DEEP POWER DOWN (DP, B9h) The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (enter into Power-down mode). During this mode, standby current is reduced from Isb1 to Isb2. While in the Power-down mode, the device is not active and all Write/Program/Erase instructions are ignored. The instruction is initiated by driving the CE# pin low and shifting the instruction code into the device. The CE# pin must be driven high after the instruction has been latched, or Power-down mode will not engage. Once CE# pin driven high, the Power-down mode will be entered within the time duration of tDP. While in the Power-down mode only the Release from Power-down/RDID instruction, which restores the device to normal operation, will be recognized. All other instructions are ignored, including the Read Status Register instruction which is always available during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition for securing maximum write protection. It is available in both SPI and QPI mode. Figure 8.55 Enter Deep Power Down Mode Sequence tDP CE # Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 SI SO Instruction = B9h High Impedance Figure 8.56 Enter Deep Power Down Mode QPI Sequence tDP CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 B9h 91 IS25LP256, IS25WP256 8.25 RELEASE DEEP POWER DOWN (RDPD, ABh) The Release Deep Power-down/Read Device ID instruction is a multi-purpose command. To release the device from the deep power-down mode, the instruction is issued by driving the CE# pin low, shifting the instruction code into the device and driving CE# high. Releasing the device from Power-down mode will take the time duration of tRES1 before normal operation is restored and other instructions are accepted. The CE# pin must remain high during the tRES1 time duration. If the Release Deep Power-down/RDID instruction is issued while an Erase, Program or Write cycle is in progress (WIP=1) the instruction is ignored and will not have any effects on the current cycle. Figure 8.57 Release Power Down Mode Sequence tRES1 CE # Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 SI SO Instruction = ABh High Impedance Figure 8.58 Release Power Down Mode QPI Sequence tRES1 CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 ABh 92 IS25LP256, IS25WP256 8.26 SET READ PARAMETERS OPERATION (SRPNV: 65h, SRPV: C0h/63h) Set Read Parameter Bits This device supports configurable burst length and dummy cycles in both SPI and QPI mode by setting three bits (P2, P1, P0) and four bits (P6, P5, P4, P3) within the Read Register, respectively. To set those bits the SRPNV and SRPV operation instruction are used. Details regarding burst length and dummy cycles can be found in Table 6.9, Table 6.10, and Table 6.11. HOLD#/RESET# pin selection (P7) bit in the Read Register can be set with the SRPNV and SRPV operation as well, in order to select RESET# pin instead of HOLD# pin. For 16-pin SOIC, RESET# pin will be a separate pin and it is independent of the P7 bit setting in Read Register. SRPNV is used to set the non-volatile Read Register, while SRPV is used to set the volatile Read Register. Note: When SRPNV is executed, the volatile Read Register is set as well as the non-volatile Read Register. Figure 8.59 Set Read Parameters Sequence CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 Data In SI SO Instruction = 65h or C0h/63h 7 6 2 3 7:4 3:0 5 4 3 High Impedence Figure 8.60 Set Read Parameters QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] 65h or C0h/63h Data In Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 93 IS25LP256, IS25WP256 Read with “8/16/32/64-Byte Wrap Around” The device is capable of burst read with wrap around in both SPI and QPI mode. The size of burst length is configurable by using P0, P1, and P2 bits in Read Register. P2 bit (Wrap enable) enables the burst mode feature. P0 and P1 define the size of burst. Burst lengths of 8, 16, 32, and 64 bytes are supported. By default, address increases by one up through the entire array. By setting the burst length, the data being accessed can be limited to the length of burst boundary within a 256 byte page. The first output will be the data at the initial address which is specified in the instruction. Following data will come out from the next address within the burst boundary. Once the address reaches the end of boundary, it will automatically move to the first address of the boundary. CE# high will terminate the command. For example, if burst length of 8 and initial address being applied is 0h, following byte output will be from address 00h and continue to 01h,..,07h, 00h, 01h… until CE# terminates the operation. If burst length of 8 and initial address being applied is FEh(254d), following byte output will be from address FEh and continue to FFh, F8h, F9h, FAh, FBh, FCh, FDh, and repeat from FEh until CE# terminates the operation. The commands, “SRPV (65h) or SRPNV (C0h or 63h)”, are used to configure the burst length. If the following data input is one of “00h”,”01h”,”02h”, and ”03h”, the device will be in default operation mode. It will be continuous burst read of the whole array. If the following data input is one of “04h”,”05h”,”06h”, and ”07h”, the device will set the burst length as 8,16,32 and 64, respectively. To exit the burst mode, another “C0h or 63h” command is necessary to set P2 to 0. Otherwise, the burst mode will be retained until either power down or reset operation. To change burst length, another “C0h or 63h” command should be executed to set P0 and P1 (Detailed information in Table 6.9 Burst Length Data). All read commands will operate in burst mode once the Read Register is set to enable burst mode. Refer to Figure 8.59 and Figure 8.60 for instruction sequence. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 94 IS25LP256, IS25WP256 8.27 SET EXTENDED READ PARAMETERS OPERATION (SERPNV: 85h, SERPV: 83h) Set Read Operational Driver Strength This device supports configurable Operational Driver Strength in both SPI and QPI modes by setting three bits (ODS0, ODS1, ODS2) within the Extended Read Register. To set the ODS bits the SERPNV and SERPV operation instructions are required. The device’s driver strength can be reduced as low as 12.50% of full drive strength. Details regarding the driver strength can be found in Table 6.14. SERPNV is used to set the non-volatile Extended Read register, while SERPV is used to set the volatile Extended Read register. Notes: 1. The default driver strength is set to 50%. 2. When SERPNV is executed, the volatile Read Extended Register is set as well as the non-volatile Read Extended Register. Figure 8.61 Set Extended Read Parameters Sequence CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 Data In SI SO Instruction = 85h/83h 7 6 5 4 3 High Impedence Figure 8.62 Set Extended Read Parameters QPI Sequence CE# Mode 3 0 1 2 3 7:4 3:0 SCK Mode 0 IO[3:0] 85h/83h Data In Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 95 IS25LP256, IS25WP256 8.28 READ READ PARAMETERS OPERATION (RDRP, 61h) Prior to, or after setting Read Register, the data of the Read Register can be confirmed by the RDRP command. The instruction is only applicable for the volatile Read Register, not for the non-volatile Read Register. Figure 8.63 Read Read Parameters Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 61h tV SO Data Out 7 6 5 4 3 2 1 0 Figure 8.64 Read Read Parameters QPI Sequence CE# Mode 3 0 1 2 3 SCK Mode 0 tV IO[3:0] 61h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 96 IS25LP256, IS25WP256 8.29 READ EXTENDED READ PARAMETERS OPERATION (RDERP, 81h) Prior to, or after setting Extended Read Register, the data of the Extended Read Register can be confirmed by the RDERP command. The instruction is only applicable for the volatile Extended Read Register, not for the non-volatile Extended Read Register. During the execution of a program, erase or Write Non-Volatile Register operation, the RDERP instruction will be executed, which can be used to check the progress or completion of an operation by reading the WIP bit. Figure 8.65 Read Extended Read Parameters Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 81h tV Data Out SO 7 6 5 4 3 2 1 0 Figure 8.66 Read Extended Read Parameters QPI Sequence CE# Mode 3 0 1 2 3 SCK Mode 0 tV IO[3:0] 81h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 97 IS25LP256, IS25WP256 8.30 CLEAR EXTENDED READ REGISTER OPERATION (CLERP, 82h) A Clear Extended Read Register (CLERP) instruction clears PROT_E, P_ERR, and E_ERR error bits in the Extended Read Register to “0” when the error bits are set to “1”. Once the error bits are set to “1”, they remains set to “1” until they are cleared to “0” with a CLERP command. Figure 8.67 Clear Extended Read Register Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 82h SI High Impedance SO Figure 8.68 Clear Extended Read Register QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 82h 98 IS25LP256, IS25WP256 8.31 READ PRODUCT IDENTIFICATION (RDID, ABh) The Release from Power-down/Read Device ID instruction is a multi-purpose instruction. It can support both SPI and QPI modes. The Read Product Identification (RDID) instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as the table of Product Identification. The RDID instruction code is followed by three dummy bytes, each bit being latched-in on SI during the rising SCK edge. Then the Device ID is shifted out on SO with the MSB first, each bit been shifted out during the falling edge of SCK. The RDID instruction is ended by driving CE# high. The Device ID (ID7-ID0) outputs repeatedly if additional clock cycles are continuously sent to SCK while CE# is at low. Table 8.8 Product Identification Manufacturer ID (MF7-MF0) ISSI Serial Flash 9Dh Instruction ABh 90h Part Number Device ID (ID7-ID0) 9Fh Memory Type + Capacity (ID15-ID0) IS25LP256 18h 6019h IS25WP256 18h 7019h Figure 8.69 Read Product Identification Sequence CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 SCK Mode 0 SI Instruction = ABh 3 Dummy Bytes tV SO Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Data Out Device ID (ID7-ID0) 99 IS25LP256, IS25WP256 Figure 8.70 Read Product Identification QPI Sequence CE# Mode 3 0 1 2 3 4 5 6 7 8 9 SCK Mode 0 tV IO[3:0] ABh Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 6 Dummy Cycles Device ID (ID7-ID0) 100 IS25LP256, IS25WP256 8.32 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh) The JEDEC ID READ instruction allows the user to read the manufacturer and product ID of devices. Refer to Table 8.8 Product Identification for Manufacturer ID and Device ID. After the JEDEC ID READ command (9Fh in SPI mode, AFh in QPI mode) is input, the Manufacturer ID is shifted out MSB first followed by the 2-byte electronic ID (ID15-ID0) that indicates Memory Type and Capacity, one bit at a time. Each bit is shifted out during the falling edge of SCK. If CE# stays low after the last bit of the 2-byte electronic ID, the Manufacturer ID and 2-byte electronic ID will loop until CE# is pulled high. Figure 8.71 Read Product Identification by JEDEC ID Read Sequence in SPI mode CE # Mode 3 0 1 ... 7 8 9 ... 15 16 17 ... 23 24 25 ... 31 SCK Mode 0 SI Instruction = 9Fh tV Manufacturer ID (MF7-MF0) SO Capacity (ID7-ID0) Memory Type (ID15-ID8) Figure 8.72 RDJDIDQ (Read JEDEC ID in QPI Mode) Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 IO[3:0] tV AFh 7:4 3:0 MF7-MF0 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 7:4 3:0 ID15-ID8 7:4 3:0 ID7-ID0 101 IS25LP256, IS25WP256 8.33 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h) The Read Device Manufacturer and Device ID (RDMDID) instruction allows the user to read the Manufacturer and product ID of devices. Refer to Table 8.8 Product Identification for Manufacturer ID and Device ID. The RDMDID instruction code is followed by two dummy bytes and one byte address (A7~A0), each bit being latched-in on SI during the rising edge of SCK. If one byte address is initially set as A0 = 0, then the Manufacturer ID is shifted out on SO with the MSB first followed by the device ID (ID7- ID0). Each bit is shifted out during the falling edge of SCK. If one byte address is initially set as A0 = 1, then Device ID7-ID0 will be read first followed by the Manufacturer ID. The Manufacturer and Device ID can be read continuously alternating between the two until CE# is driven high. Figure 8.73 Read Product Identification by RDMDID Sequence CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47 SCK Mode 0 SI Instruction = 90h 3-byte Address tV Device ID (ID7-ID0) Manufacturer ID (MF7-MF0) SO Notes: 1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) 1-byte Device ID (ID7-ID0) ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) 1-byte Manufacturer ID (MF7-MF0) 2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is pulled high. Figure 8.74 Read Product Identification by RDMDID QPI Sequence CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 SCK Mode 0 tV IO[3:0] 90h 23:20 19:16 15:12 11:8 Instruction 3-byte Address 7:4 3:0 7:4 3:0 7:4 3:0 Manufacturer Device ID ID (MF7-MF0) (ID7-ID0) Notes: 1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) 1-byte Device ID (ID7-ID0) ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) 1-byte Manufacturer ID (MF7-MF0) 2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is pulled high. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 102 IS25LP256, IS25WP256 8.34 READ UNIQUE ID NUMBER (RDUID, 4Bh) The Read Unique ID Number (RDUID) instruction accesses a factory-set read-only 16-byte number that is unique to the device. The ID number can be used in conjunction with user software methods to help prevent copying or cloning of a system. The RDUID instruction is instated by driving the CE# pin low and shifting the instruction code (4Bh) followed by 3 address bytes and dummy cycles (configurable, default is 8 clocks). After which, the 16-byte ID is shifted out on the falling edge of SCK as shown below. As a result, the sequence of RDUID instruction is same as FAST READ. RDUID QPI sequence is also same as FAST READ QPI except for the instruction code. Refer to the FAST READ QPI operation. Note: 16 bytes of data will repeat as long as CE# is low and SCK is toggling. Figure 8.75 RDUID Sequence CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47 ... SCK Mode 0 SI Instruction = 4Bh 3 Byte Address Dummy Cycles tV SO Data Out Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. A[23:16] A[15:9] A[8:4] A[3:0] XXh XXh 00h 0h Byte address XXh XXh 00h 1h Byte address XXh XXh 00h 2h Byte address XXh XXh 00h … Table 8.9 Unique ID Addressing XXh XXh 00h Fh Byte address Note: XX means “don’t care”. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 103 IS25LP256, IS25WP256 8.35 READ SFDP OPERATION (RDSFDP, 5Ah) The Serial Flash Discoverable Parameters (SFDP) standard provides a consistent method of describing the functions and features of serial Flash devices in a standard set of internal parameter tables. These parameters can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. For more details please refer to the JEDEC Standard JESD216A (Serial Flash Discoverable Parameters). The sequence of issuing RDSFDP instruction is same as FAST_READ: CE# goes low Send RDSFDP instruction (5Ah) Send 3 address bytes on SI pin Send dummy cycles (configurable, default is 8 clocks) on SI pin Read SFDP code on SO End RDSFDP operation by driving CE# high at any time during data out. Refer to ISSI’s Application note for SFDP table. The data at the addresses that are not specified in SFDP table are undefined. The sequence of RDSFDP instruction is same as FAST READ except for the instruction code. RDSFDP QPI sequence is also same as FAST READ QPI except for the instruction code. Refer to the FAST READ QPI operation. Figure 8.76 RDSFDP (Read SFDP) Sequence CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47 ... SCK Mode 0 SI Instruction = 5Ah 3 Byte Address Dummy Cycles tV SO Data Out Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. 8.36 NO OPERATION (NOP, 00h) The No Operation command solely cancels a Reset Enable command and has no impact on any other commands. It is available in both SPI and QPI modes. To execute a NOP, the host drives CE# low, sends the NOP command cycle (00H), then drives CE# high. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 104 IS25LP256, IS25WP256 8.37 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE RESET The Software Reset operation is used as a system reset that puts the device in normal operating mode. During the Reset operation, the value of volatile registers will default back to the value in the corresponding non-volatile register. However, the volatile FREEZE bit and the volatile PPB Lock bit in the PPB Lock Register are not changed by Software Reset. In all other respects, Software Reset is the same as Hardware Reset. This operation consists of two commands: Reset-Enable (RSTEN) and Reset (RST). The operation requires the Reset-Enable command followed by the Reset command. Any command other than the Reset command after the Reset-Enable command will disable the Reset-Enable. Execute the CE# pin low sends the Reset-Enable command (66h), and drives CE# high. Next, the host drives CE# low again, sends the Reset command (99h), and pulls CE# high. Only if the RESET# pin is enabled, Hardware Reset function is available. For all other packages except the package with additional RESET# pin option, the RESET# pin will be solely applicable in SPI mode and when the QE bit is disabled. For the package with additional RESET# pin which is enabled by the RESET# Enable/Disable bit setting (“0” indicates Enable) in Function Register, the RESET# pin is always applicable regardless of the QE bit value in Status Register and HOLD#/RESET# selection bit (P7) in Read Register. The additional RESET# pin has an internal pull-up resistor and may be left floating if not used. The RESET# pin has the highest priority among all the input signals and will reset the device to its initial power-on state regardless of the state of all other pins (CE#, IOs, SCK, and WP#). In order to activate Hardware Reset, the RESET# pin must be driven low for a minimum period of tRESET (1µs). Drive RESET# low for a minimum period of tRESET will interrupt any on-going internal and external operations, 1 release the device from deep power down mode , disable all input signals, force the output pin enter a state of high impedance, and reset all the read parameters. If the RESET# pulse is driven for a period shorter than 1µs, it may still reset the device, however the 1µs minimum period is recommended to ensure the reliable operation. The required wait time after activating a HW Reset before the device will accept another instruction (tHWRST) is the same as the maximum value of tSUS (100µs). The Software/Hardware Reset during an active Program or Erase operation aborts the operation, which can result in corrupting or losing the data of the targeted address range. Depending on the prior operation, the reset timing may vary. Recovery from a Write operation will require more latency than recovery from other operations. Note1: The Status and Function Registers remain unaffected. Figure 8.77 Software Reset Enable and Software Reset Sequence (RSTEN, 66h + RST, 99h) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 66h Instruction = 99h High Impedance SO Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 105 IS25LP256, IS25WP256 Figure 8.78 Software Reset Enable and Software Reset QPI Sequence (RSTEN, 66h + RST, 99h) CE# Mode 3 0 1 0 1 SCK Mode 0 IO[3:0] 99h 66h 8.38 SECURITY INFORMATION ROW The security Information Row is comprised of an additional 4 x 256 bytes of programmable information. The security bits can be reprogrammed by the user. Any program security instruction issued while an erase, program or write cycle is in progress is rejected without having any effect on the cycle that is in progress. Table 8.10 Information Row Valid Address Range Address Assignment IRL0 (Information Row Lock0) IRL1 IRL2 IRL3 A[23:16] 00h 00h 00h 00h A[15:8] 00h 10h 20h 30h A[7:0] Byte address Byte address Byte address Byte address Bit 7~4 of the Function Register is used to permanently lock the programmable memory array. When Function Register bit IRLx = “0”, the 256 bytes of the programmable memory array can be programmed. When Function Register bit IRLx = “1”, the 256 bytes of the programmable memory array function as read only. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 106 IS25LP256, IS25WP256 8.39 INFORMATION ROW ERASE OPERATION (IRER, 64h) Information Row Erase (IRER) instruction erases the data in the Information Row x (x: 0~3) array. Prior to the operation, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically reset after the completion of the operation. The sequence of IRER operation: Pull CE# low to select the device Send IRER instruction code Send three address bytes Pull CE# high. CE# should remain low during the entire instruction sequence. Once CE# is pulled high, Erase operation will begin immediately. The internal control logic automatically handles the erase voltage and timing. Figure 8.79 IRER (Information Row Erase) Sequence CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 1 0 SCK Mode 0 3-byte Address SI SO Instruction = 64h 23 22 21 ... 3 2 High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 107 IS25LP256, IS25WP256 8.40 INFORMATION ROW PROGRAM OPERATION (IRP, 62h) The Information Row Program (IRP) instruction allows up to 256 bytes data to be programmed into the memory in a single operation. Before the execution of IRP instruction, the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction. The IRP instruction code, three address bytes and program data (1 to 256 bytes) should be sequentially input. Three address bytes has to be input as specified in the Table 8.10 Information Row Valid Address Range. Program operation will start once the CE# goes high, otherwise the IRP instruction will not be executed. The internal control logic automatically handles the programming voltages and timing. During a program operation, all instructions will be ignored except the RDSR instruction. The progress or completion of the program operation can be determined by reading the WIP bit. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed. If more than 256 bytes data are sent to a device, the address counter rolls over within the same page. The previously latched data are discarded and the last 256 bytes data are kept to be programmed into the page. The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A byte cannot be reprogrammed without first erasing the corresponding Information Row array which is one of IR0~3. Figure 8.80 IRP (Information Row Program) Sequence 1 ... 7 8 9 ... 31 32 33 ... 39 ... ... 2079 Mode 3 0 2072 CE # SCK Mode 0 SI SO Data In 1 3-byte Address Instruction = 62h 23 22 ... 0 7 6 ... Data In 256 0 ... 7 ... 0 High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 108 IS25LP256, IS25WP256 8.41 INFORMATION ROW READ OPERATION (IRRD, 68h) The IRRD instruction is used to read memory data at up to a 166MHz clock. The IRRD instruction code is followed by three address bytes (A23 - A0) and dummy cycles (configurable, default is 8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK. The address is automatically incremented by one after each byte of data is shifted out. Once the address reaches the last address of each 256 byte Information Row, the next address will not be valid and the data of the address will be garbage data. It is recommended to repeat four times IRRD operation that reads 256 byte with a valid starting address of each Information Row in order to read all data in the 4 x 256 byte Information Row array. The IRRD instruction is terminated by driving CE# high (VIH). If an IRRD instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not have any effects on the current cycle The sequence of IRRD instruction is same as Fast Read except for the instruction code. IRRD QPI sequence is same as Fast Read QPI except for the instruction code. Refer to the Fast Read QPI operation. Figure 8.81 IRRD (Information Row Read) Sequence CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47 ... SCK Mode 0 SI Instruction = 68h 3 Byte Address Dummy Cycles tV SO Data Out Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 109 IS25LP256, IS25WP256 8.42 FAST READ DTR MODE OPERATION (FRDTR, 0Dh or 4FRDTR, 0Eh) The FRDTR/4FRDTR instruction is for doubling the data in and out. Signals are triggered on both rising and falling edge of clock. The address is latched on both rising and falling edge of SCK, and data of each bit shifts out on both rising and falling edge of SCK at a maximum frequency fC2. The 2-bit address can be latched-in at one clock, and 2-bit data can be read out at one clock, which means one bit at the rising edge of clock, the other bit at the falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte of data is shifted out, so the whole memory can be read out in a single FRDTR/4FRDTR instruction. The address counter rolls over to 0 when the highest address is reached. • 0Dh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 0Dh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 0Eh is followed by a 4-byte address (A31-A0) The sequence of issuing FRDTR/4FRDTR instruction is: CE# goes low Sending FRDTR/4FRDTR instruction code (1bit per clock) 3-byte or 4-byte address on SI (2-bit per clock) as above 8 dummy clocks (configurable, default is 8 clocks) on SI Data out on SO (2-bit per clock) End FRDTR/4FRDTR operation via driving CE# high at any time during data out. While a Program/Erase/Write Status Register cycle is in progress, FRDTR/4FRDTR instruction will be rejected without any effect on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 110 IS25LP256, IS25WP256 Figure 8.82 FRDTR Sequence (0Dh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 19 20 21 SCK Mode 0 3-byte Address SI Instruction = 0Dh 23 22 21 20 19 18 17 ... 0 High Impedance SO CE # 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 ... SCK SI 8 Dummy Cycles tV Data Out 1 SO Data Out 2 Data Out ... 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 ... Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 111 IS25LP256, IS25WP256 Figure 8.83 FRDTR Sequence (0Dh [EXTADD=1] or 0Eh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 27 28 29 SCK Mode 0 4-byte Address SI Instruction = 0Dh/0Eh 31 30 29 28 27 26 25 ... 0 High Impedance SO CE # 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 ... SCK SI 8 Dummy Cycles tV Data Out 1 SO Data Out 2 Data Out ... 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 ... Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 112 IS25LP256, IS25WP256 FAST READ DTR QPI MODE OPERATION (FRDTR QPI, 0Dh or 4FRDTR QPI, 0Eh) The FRDTR/4FRDTR QPI instruction utilizes all four IO lines to input the instruction code so that only two clocks are required, while the FRDTR/4FRDTR instruction requires that the byte-long instruction code is shifted into the device only via IO0 (SI) line in eight clocks. In addition, subsequent address and data out are shifted in/out via all four IO lines unlike the FRDTR/4FRDTR instruction. Eventually this operation is same as the FRQDTR/4FRQDTR QPI, but the only different thing is that AX mode is not available in the FRDTR/4FRDTR QPI operation. A Quad Enable (QE) bit of Status Register must be set to "1" before sending the FRDTR/4FRDTR QPI instruction. • 0Dh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 0Dh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 0Eh is followed by a 4-byte address (A31-A0) The sequence of issuing FRDTR/4FRDTR QPI instruction is: CE# goes low Sending FRDTR/4FRDTR QPI instruction (4-bit per clock) 24-bit or 32-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) as above 6 dummy clocks (configurable, default is 6 clocks) Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) End FRDTR/4FRDTR QPI operation by driving CE# high at any time during data out. If the FRDTR/4FRDTR QPI instruction is issued while an Erase, Program or Write cycle is in process is in progress (WIP=1), the instruction will be rejected without any effect on the current cycle. Figure 8.84 FRDTR QPI Sequence (0Dh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 ... SCK Mode 0 IO0 IO1 IO2 IO3 Instruction = 0Dh 6 Dummy Cycles 3-byte Address tV Data Data Out Out 4 0 20 16 12 8 4 0 4 0 4 0 ... 5 1 21 17 13 9 5 1 5 1 5 1 ... 6 2 22 18 14 10 6 2 6 2 6 2 ... 7 3 23 19 15 11 7 3 7 3 7 3 ... Notes: 1. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 2. Sufficient dummy cycles are required to avoid I/O contention. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 113 IS25LP256, IS25WP256 Figure 8.85 FRDTR QPI Sequence (0Dh [EXTADD=1] or 0Eh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 ... SCK Mode 0 IO0 IO1 IO2 IO3 Instruction = 0Dh/0Eh 6 Dummy Cycles 4-byte Address tV Data Out 4 0 28 24 20 16 12 8 4 0 4 0 ... 5 1 29 25 21 17 13 9 5 1 5 1 ... 6 2 30 26 22 18 14 10 6 2 6 2 ... 7 3 31 27 23 19 15 11 7 3 7 3 ... Notes: 1. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 2. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 114 IS25LP256, IS25WP256 8.43 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh or 4FRDDTR, BEh) The FRDDTR/4FRDDTR instruction enables Double Transfer Rate throughput on dual I/O of the device in read mode. The address (interleave on dual I/O pins) is latched on both rising and falling edge of SCK, and the data (interleave on dual I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency fT2. The 4bit address can be latched-in at one clock, and 4-bit data can be read out at one clock, which means two bits at the rising edge of clock, the other two bits at the falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte of data is shifted out, so the whole memory can be read out with a single FRDDTR/4FRDDTR instruction. The address counter rolls over to 0 when the highest address is reached. Once writing FRDDTR/4FRDDTR instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit. • BDh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • BDh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • BEh is followed by a 4-byte address (A31-A0) The sequence of issuing FRDDTR/4FRDDTR instruction is: CE# goes low Sending FRDDTR/4FRDDTR instruction (1-bit per clock) 24-bit or 32-bit address interleave on IO1 & IO0 (4-bit per clock) as above 4 dummy clocks (configurable, default is 4 clocks) on IO1 & IO0 Data out interleave on IO1 & IO0 (4-bit per clock) End FRDDTR/4FRDDTR operation via pulling CE# high at any time during data out (Please refer to Figures 8.86 and 8.87 for 2 x I/O Double Transfer Rate Read Mode Timing Waveform). If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation mode which enables subsequent FRDDTR/4FRDDTR execution skips command code. It saves cycles as described in Figures 8.88 and 8.89. When the code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. If the FRDDTR/4FRDDTR instruction is issued while an Erase, Program or Write cycle is in process is in progress (WIP=1), the instruction will be rejected without any effect on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 115 IS25LP256, IS25WP256 Figure 8.86 FRDDTR Sequence (BDh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 13 14 SCK Mode 0 3-byte Address SI Instruction = BDh 22 20 18 16 14 12 10 4 Dummy Cycles ... 0 6 4 Mode Bits High Impedance SO 23 21 19 17 15 13 11 ... 1 7 5 CE # 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 ... SCK tV SI 2 0 Data Out Data Out Data Out Data Out Data Out Data Out 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 ... Mode Bits SO 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 ... Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 116 IS25LP256, IS25WP256 Figure 8.87 FRDDTR Sequence (BDh [EXTADD=1] or BEh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 17 18 SCK Mode 0 4-byte Address SI Instruction = BDh/BEh 30 28 26 24 22 20 18 4 Dummy Cycles ... 0 6 4 Mode Bits High Impedance SO 31 29 27 25 23 21 19 ... 1 7 5 CE # 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 ... SCK tV SI 2 0 Data Out Data Out Data Out Data Out Data Out Data Out 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 ... Mode Bits SO 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 ... Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 117 IS25LP256, IS25WP256 Figure 8.88 FRDDTR AX Read Sequence (BDh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 ... 6 7 8 9 10 11 12 13 14 15 16 ... SCK Mode 0 4 Dummy Cycles tV 3-byte Address SI 22 20 18 16 14 12 10 ... Data Out Data Out Data Out 6 4 2 0 6 4 2 0 6 4 2 0 ... 0 6 4 2 0 Mode Bits SO 23 21 19 17 15 13 11 ... 7 5 3 1 7 5 3 1 7 5 3 1 ... 1 7 5 3 1 Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Figure 8.89 FRDDTR AX Read Sequence (BDh [EXTADD=1] or BEh, 4-byte address) CE # Mode 3 0 1 2 ... 8 9 10 11 12 13 14 15 16 17 18 ... SCK Mode 0 4 Dummy Cycles 4-byte Address SI 30 28 26 24 22 20 18 ... 0 6 4 2 0 tV Data Out Data Out Data Out 6 4 2 0 6 4 2 0 6 4 2 0 ... Mode Bits SO 31 29 27 25 23 21 19 ... 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 ... Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 118 IS25LP256, IS25WP256 8.44 FAST READ QUAD IO DTR MODE OPERATION (FRQDTR, EDh or 4FRQDTR, EEh) The FRQDTR/4FRQDTR instruction enables Double Transfer Rate throughput on quad I/O of the device in read mode. A Quad Enable (QE) bit of Status Register must be set to "1" before sending the FRQDTR/4FRQDTR instruction. The address (interleave on 4 I/O pins) is latched on both rising and falling edge of SCK, and data (interleave on 4 I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency fQ2. The 8-bit address can be latched-in at one clock, and 8-bit data can be read out at one clock, which means four bits at the rising edge of clock, the other four bits at the falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out with a single FRQDTR/4FRQDTR instruction. The address counter rolls over to 0 when the highest address is reached. Once writing FRQDTR/4FRQDTR instruction, the following address/dummy/data out will perform as 8-bit instead of previous 1-bit. • EDh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • EDh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • EEh is followed by a 4-byte address (A31-A0) The sequence of issuing FRQDTR/4FRQDTR instruction is: CE# goes low Sending FRQDTR/4FRQDTR instruction (1-bit per clock) 24-bit or 32-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) as above 6 dummy clocks (configurable, default is 6 clocks) Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) End FRQDTR/4FRQDTR operation by driving CE# high at any time during data out. If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation mode which enables subsequent FRQDTR/4FRQDTR execution skips command code. It saves cycles as described in Figures 8.92 and 8.93. When the code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. If the FRQDTR/4FRQDTR instruction is issued while an Erase, Program or Write cycle is in process is in progress (WIP=1), the instruction will be rejected without any effect on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 119 IS25LP256, IS25WP256 Figure 8.90 FRQDTR Sequence (EDh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 SCK Mode 0 3-byte Address IO0 Instruction = EDh 6 Dummy Cycles 20 16 12 8 4 0 4 0 High Impedance IO1 21 17 13 9 5 1 5 1 IO2 22 18 14 10 6 2 6 2 IO3 23 19 15 11 7 3 7 3 Mode Bits CE # 13 14 15 16 17 18 19 20 21 22 23 24 25 26 ... SCK Data Data Data Data Data Data Data Data Data Data tV Out Out Out Out Out Out Out Out Out Out IO0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 ... IO1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 ... IO2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 ... IO3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 ... Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 120 IS25LP256, IS25WP256 Figure 8.91 FRQDTR Sequence (EDh [EXTADD=1] or EEh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 SCK Mode 0 4-byte Address IO0 Instruction = EDh/EEh 6 Dummy Cycles 28 24 20 16 12 8 4 0 4 0 High Impedance IO1 29 25 21 17 13 9 5 1 5 1 IO2 30 26 22 18 14 10 6 2 6 2 IO3 31 27 23 19 15 11 7 3 7 3 Mode Bits CE # 14 15 16 17 18 19 20 21 22 23 24 25 26 27 ... SCK Data Data Data Data Data Data Data Data Data Data tV Out Out Out Out Out Out Out Out Out Out IO0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 ... IO1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 ... IO2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 ... IO3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 ... Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 121 IS25LP256, IS25WP256 Figure 8.92 FRQDTR AX Read Sequence (EDh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 ... SCK Mode 0 6 Dummy Cycles 3-byte Address IO0 IO1 IO2 IO3 Data Data Data Data tV Out Out Out Out 20 16 12 8 4 0 4 0 4 0 4 0 4 0 4 0 ... 21 17 13 9 5 1 5 1 5 1 5 1 5 1 5 1 ... 22 18 14 10 6 2 6 2 6 2 6 2 6 2 6 2 ... 23 19 15 11 7 3 7 3 7 3 7 3 7 3 7 3 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 122 IS25LP256, IS25WP256 Figure 8.93 FRQDTR AX Read Sequence (EDh [EXTADD=1] or EEh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 ... SCK Mode 0 6 Dummy Cycles 4-byte Address IO0 IO1 IO2 IO3 Data Data Data Data tV Out Out Out Out 28 24 20 16 12 8 4 0 4 0 4 0 4 0 4 0 4 0 ... 29 25 21 17 13 9 5 1 5 1 5 1 5 1 5 1 5 1 ... 30 26 22 18 14 10 6 2 6 2 6 2 6 2 6 2 6 2 ... 31 27 23 19 15 11 7 3 7 3 7 3 7 3 7 3 7 3 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 123 IS25LP256, IS25WP256 FAST READ QUAD IO DTR QPI MODE OPERATION (FRQDTR QPI, EDh OR 4FRQDTR QPI, EEh) The FRQDTR/4FRQDTR QPI instruction utilizes all four IO lines to input the instruction code so that only two clocks are required, while the FRQDTR/4FRQDTR instruction requires that the byte-long instruction code is shifted into the device only via IO0 line in eight clocks. As a result, 6 command cycles will be reduced by the FRQDTR/4FRQDTR QPI instruction. In addition, subsequent address and data out are shifted in/out via all four IO lines like the FRQDTR/4FRQDTR instruction. In fact, except for the command cycle, the FRQDTR/4FRQDTR QPI operation is exactly same as the FRQDTR/4FRQDTR. A Quad Enable (QE) bit of Status Register must be set to "1" before sending the FRQDTR/4FRQDTR QPI instruction. • EDh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • EDh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • EEh is followed by a 4-byte address (A31-A0) The sequence of issuing FRQDTR/4FRQDTR QPI instruction is: CE# goes low Sending FRQDTR/4FRQDTR QPI instruction (4-bit per clock) 24-bit or 32-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) as above 6 dummy clocks (configurable, default is 6 clocks) Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) End FRQDTR/4FRQDTR QPI operation by driving CE# high at any time during data out. If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation mode which enables subsequent FRQDTR/4FRQDTR QPI execution skips command code. It saves cycles as described in Figures 8.92 and 8.93. When the code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. If the FRQDTR/4FRQDTR QPI instruction is issued while an Erase, Program or Write cycle is in process is in progress (WIP=1), the instruction will be rejected without any effect on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 124 IS25LP256, IS25WP256 Figure 8.94 FRQDTR QPI Sequence (EDh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 ... SCK Mode 0 IO0 IO1 IO2 IO3 Instruction = EDh 6 Dummy Cycles 3-byte Address tV Data Data Out Out 4 0 20 16 12 8 4 0 4 0 4 0 4 0 ... 5 1 21 17 13 9 5 1 5 1 5 1 5 1 ... 6 2 22 18 14 10 6 2 6 2 6 2 6 2 ... 7 3 23 19 15 11 7 3 7 3 7 3 7 3 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 125 IS25LP256, IS25WP256 Figure 8.95 FRQDTR QPI Sequence (EDh [EXTADD=1] or EEh, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 ... SCK Mode 0 IO0 IO1 IO2 IO3 Instruction = EDh/EEh 6 Dummy Cycles 4-byte Address tV Data Out 4 0 28 24 20 16 12 8 4 0 4 0 4 0 ... 5 1 29 25 21 17 13 9 5 1 5 1 5 1 ... 6 2 30 26 22 18 14 10 6 2 6 2 6 2 ... 7 3 31 27 23 19 15 11 7 3 7 3 7 3 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 126 IS25LP256, IS25WP256 8.45 SECTOR LOCK/UNLOCK FUNCTIONS SECTOR UNLOCK OPERATION (SECUNLOCK, 26h or 4SECUNLOCK, 25h) The Sector Unlock command allows the user to select a specific sector to allow program and erase operations. This instruction is effective when the blocks are designated as write-protected through the BP0-BP3 bits in the Status Register and TBS bit in the Function Register. Only one sector can be enabled at any time. To enable a different sector, a previously enabled sector must be disabled by executing a Sector Lock command. • 26h (EXTADD=0) is followed by a 3-byte address (A23-A0) or • 26h (EXTADD=1) is followed by a 4-byte address (A31-A0) or • 25h is followed by a 4-byte address (A31-A0) The instruction code is followed by a 24-bit or 32-bit address specifying the target sector as above, but A0 through A11 are not decoded. The remaining sectors within the same block remain as read-only. Figure 8.96 Sector Unlock Sequence (26h [EXTADD=0], 3-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 2 1 0 37 38 39 1 0 SCK Mode 0 3-byte Address SI Instruction = 26h 23 22 21 ... 3 High Impedance SO Figure 8.97 Sector Unlock Sequence (26h [EXTADD=1] or 25h, 4-byte address) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 36 SCK Mode 0 4-byte Address SI SO Instruction = 26h/25h 31 30 29 ... 3 2 High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 127 IS25LP256, IS25WP256 Figure 8.98 Sector Unlock QPI Sequence (26h [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 6 7 7:4 3:0 5 SCK Mode 0 3-byte Address Instruction IO[3:0] 23:20 19:16 15:12 11:8 26h Figure 8.99 Sector Unlock QPI Sequence (26h [EXTADD=1] or 25h, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 7:4 3:0 SCK Mode 0 IO[3:0] 4-byte Address 26h/25h 31:28 27:24 23:20 19:16 15:12 11:8 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 128 IS25LP256, IS25WP256 SECTOR LOCK OPERATION (SECLOCK, 24h) The Sector Lock command relocks a sector that was previously unlocked by the Sector Unlock command. The instruction code does not require an address to be specified, as only one sector can be enabled at a time. The remaining sectors within the same block remain in read-only mode. Figure 8.100 Sector Lock Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 24h SI High Impedance SO Figure 8.101 Sector Lock QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 24h 129 IS25LP256, IS25WP256 8.46 AUTOBOOT SPI devices normally require 32 or more cycles of command and address shifting to initiate a read command. And, in order to read boot code from an SPI device, the host memory controller or processor must supply the read command from a hardwired state machine or from some host processor internal ROM code. Parallel NOR devices need only an initial address, supplied in parallel in a single cycle, and initial access time to start reading boot code. The AutoBoot feature allows the host memory controller to take boot code from the device immediately after the end of reset, without having to send a read command. This saves 32 or more cycles and simplifies the logic needed to initiate the reading of boot code. • As part of the Power-up Reset, Hardware Reset, or Software Reset process the AutoBoot feature automatically starts a read access from a pre-specified address. At the time the reset process is completed, the device is ready to deliver code from the starting address. The host memory controller only needs to drive CE# signal from high to low and begin toggling the SCK signal. The device will delay code output for a prespecified number of clock cycles before code streams out. – The Auto Boot Start Delay (ABSD) field of the AutoBoot register specifies the initial delay if any is needed by the host. – The host cannot send commands during this time. – If QE bit (Bit 6) in the Status Register is set to “1”, Quad IO Read operation will be selected. If it is set to “0”, fast read SPI operation will be applied. Maximum operation frequency will be 166MHz for both operations. • The starting address of the boot code is selected by the value programmed into the AutoBoot Start Address (ABSA) field of the AutoBoot Register. – Data will continuously shift out until CE# returns high. • At any point after the first data byte is transferred, when CE# returns high, the SPI device will reset to standard SPI mode; able to accept normal command operations. – A minimum of one byte must be transferred. – AutoBoot mode will not initiate again until another power cycle or a reset occurs. • An AutoBoot Enable bit (ABE) is set to enable the AutoBoot feature. The AutoBoot register bits are non-volatile and provide: • The starting address set by the AutoBoot Start Address (ABSA). • The number of initial delay cycles, set by the AutoBoot Start Delay (ABSD) 4-bit count value. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 130 IS25LP256, IS25WP256 Figure 8.102 AutoBoot Sequence (QE = 0) CE # Mode 3 0 1 2 ... n-1 n n+2 n+1 n+3 n+4 n+5 n+6 n+7 n+8 n+9 ... n+10 SCK Mode 0 SI ABSD Delay (n) tV SO 7 6 5 3 4 2 1 0 7 ... 6 High Impedance Data Out 1 Data Out 2 ... Figure 8.103 AutoBoot Sequence (QE = 1) CE # Mode 3 0 1 2 ... n-1 n n+2 n+1 n+3 n+4 n+5 n+6 n+7 n+9 n+8 n+10 ... SCK Mode 0 ABSD Delay (n) tV IO0 4 0 4 0 4 0 4 0 4 0 ... IO1 5 1 5 1 5 1 5 1 5 1 ... IO2 6 2 6 2 6 2 6 2 6 2 ... IO3 7 3 7 3 7 3 7 3 7 3 ... High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 Data Out 1 Data Out 2 Data Out 3 Data Out 4 Data Out 5 ... 131 IS25LP256, IS25WP256 AUTOBOOT REGISTER READ OPERATION (RDABR, 14h) The AutoBoot Register Read command is shifted in. Then the 32bit AutoBoot Register is shifted out, least significant byte first, most significant bit of each byte first. It is possible to read the AutoBoot Register continuously by providing multiples of 32bits. Figure 8.104 RDABR Sequence (QE = 1) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 ... 15 SCK Mode 0 SI Instruction = 14h tV SO 7 6 5 4 3 2 1 0 Data Out 1 Figure 8.105 RDABR QPI Sequence (QE = 1) CE# Mode 3 0 1 2 ... 3 SCK Mode 0 tV IO[3:0] 14h 7:4 3:0 ... Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 132 ... IS25LP256, IS25WP256 AUTOBOOT REGISTER WRITE OPERATION (WRABR, 15h) Before the WRABR command can be accepted, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The WRABR command is entered by shifting the instruction and the data bytes, least significant byte first, most significant bit of each byte first. The WRABR data is 32bits in length. CE# must be driven high after the 32nd bit of data has been latched. If not, the WRABR command is not executed. As soon as CE# is driven high, the WRABR operation is initiated. While the WRABR operation is in progress, Status Register or Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1” during the WRABR operation, and is “0” when it is completed. When the WRABR cycle is completed, the WEL is set to “0”. Figure 8.106 WRABR Sequence (QE = 1) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 7 6 5 4 3 2 1 0 ... SCK Mode 0 SI Instruction = 15h ... Data In 1 SO High Impedance Figure 8.107 WRABR QPI Sequence (QE = 1) CE# Mode 3 0 1 2 3 7:4 3:0 ... SCK Mode 0 IO[3:0] 15h ... Data In 1 Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 133 IS25LP256, IS25WP256 8.47 READ BANK ADDRESS REGISTER OPERATION (RDBR: 16h/C8h) The Read Bank Address Register (RDBR) instruction allows the Bank Address Register contents to be read. RDRP is used to read only a volatile Bank Address Register. The instruction code is first shifted in. Then the 8-bit Bank Register is shifted out. It is possible to read the Bank Address Register continuously by providing multiples of eight bits. The maximum operating clock frequency for the RDBR command is 166MHz. Data is shifted in from SI and data is shifted out from SO in SPI sequence whereas data in and out is via four pins (IO0-IO3) in QPI sequence. Figure 8.108 Read Bank Address Register Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 16h/C8h tV SO Data Out 7 6 5 4 3 2 1 0 Figure 8.109 Read Bank Address Register QPI Sequence CE# Mode 3 0 2 1 3 SCK Mode 0 tV IO[3:0] 16h/C8h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 134 IS25LP256, IS25WP256 8.48 WRITE BANK ADDRESS REGISTER OPERATION (WRBRNV: 18h, WRBRV: 17h/C5h) The Write Bank Address Register (WRBRNV and WRBRV) instruction is used to write address bits above A23, into the Bank Address Register (BAR). WRBRNV is used to write the non-volatile Bank Address Register and WRBRV is used to write the volatile Bank Address Register. The instruction is also used to write the Extended Address Control bit (EXTADD) that is also in BAR[7]. BAR provides the high order addresses needed by devices having more than 128Mbits (16Mbytes), when using 3-byte address commands without extended addressing enabled (BAR[7] EXTADD = 0). WRBRNV requires the Write Enable (WREN) command to precede it while WRBRV does not require WREN command. The WRBRNV/WRBRV instruction is entered, followed by the data byte. The Bank Address Register is one data byte in length. The WRBRNV/WRBRV command has no effect on the Write In Progress (WIP) bit. Any bank address bit reserved for the future should always be written as “0”. Data is shifted in from SI and in SPI whereas data is shifted in via four pins (IO0-IO3) in QPI. Note: When WRBRNV is executed, the volatile Bank Address Register is set as well as the non-volatile Bank Address Register. Figure 8.110 Write Bank Address Register Sequence CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 Data In SI SO Instruction = 18h or 17h/C5h 7 6 2 3 7:4 3:0 5 4 3 High Impedence Figure 8.111 Write Bank Address Register QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] 18h or 17h/C5h Data In Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 135 IS25LP256, IS25WP256 8.49 ENTER 4-BYTE ADDRESS MODE OPERATION (EN4B, B7h) The Enter 4-byte Address Mode instruction allows 32bit address (A31-A0) to be used to access the memory array beyond 128Mb. To execute EN4B operation, the host drives CE# low, sends the instruction code and then drives CE# high. The Exit 4-byte Address Mode instruction can be used to exit the 4-byte address mode. Note: The EN4B instruction will set the Bit 7 (EXTADD) of the volatile Bank Address Register to “1”, but will not change the non-volatile Bank Address Register. Figure 8.112 Enter 4-byte Address Mode Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = B7h SI High Impedance SO Figure 8.113 Enter 4-byte Address Mode QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 B7h 136 IS25LP256, IS25WP256 8.50 EXIT 4-BYTE ADDRESS MODE OPERATION (EX4B, 29h) In order to be backward compatible, the Exit 4-byte Address Mode instruction allows 24bit address (A23-A0) to be used to access the memory array up to 128Mb. The Bank Address Register must be used to access the memory array beyond 128Mb. To execute EX4B operation, the host drives CE# low, sends the instruction code and then drives CE# high. Note: The EX4B instruction will reset the Bit 7 (EXTADD) of the volatile Bank Address Register to “0” ”, but will not change the non-volatile Bank Address Register. Figure 8.114 Exit 4-byte Address Mode Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 29h SI High Impedance SO Figure 8.115 Exit 4-byte Address Mode QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 29h 137 IS25LP256, IS25WP256 8.51 READ DYB OPERATION (RDDYB, FAh or 4RDDYB, E0h) FAh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • FAh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • E0h is followed by a 4-byte address (A31-A0) The instruction is used to read Dynamic Protection Bit (DYB) status of the given sector/block. The instruction code is entered first, followed by the 24-bit or 32-bit address selecting location zero within the desired sector/block as above. Then the 8-bit DYB access register contents are shifted out. Each bit (SPI) or four bits (QPI) are shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the same DYB access register continuously by providing multiples of eight bits. The address of the DYB register does not increment so this is not a means to read the entire DYB array. Each location must be read with a separate Read DYB instruction. The maximum operating clock frequency for READ command is 166MHz. Note: The high order address bits not used by 256M must be zero. Figure 8.116 Read DYB Sequence (FAh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 34 35 36 37 38 39 SCK Mode 0 SI Instruction = FAh 3-byte Address tV SO Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 7 6 5 4 3 2 1 0 138 IS25LP256, IS25WP256 Figure 8.117 Read DYB Sequence (FAh [EXTADD=1] or E0h, 4-byte address) CE # Mode 3 0 1 ... 7 8 9 39 ... 40 41 42 43 44 45 46 47 SCK Mode 0 SI Instruction = FAh/E0h 4-byte Address tV SO 7 6 5 3 4 2 1 0 Figure 8.118 Read DYB QPI Sequence (FAh [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 SCK Mode 0 tV 3-byte Address FAh IO[3:0] Data Out Figure 8.119 Read DYB QPI Sequence (FAh [EXTADD=0] or E0h, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 SCK Mode 0 tV IO[3:0] FAh/E0h Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 4-byte Address Data Out 139 IS25LP256, IS25WP256 8.52 WRITE DYB OPERATION (WRDYB, FBh or 4WRDYB, E1h) Before the Write DYB (WRDYB) command can be accepted by the device, a Write Enable (WREN) command must be issued. After the WREN command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to enable any write operations. • FBh (EXTADD=0) is followed by a 3-byte address (A23-A0) or • FBh (EXTADD=1) is followed by a 4-byte address (A31-A0) or • E1h is followed by a 4-byte address (A31-A0) The WRDYB command is entered by driving CE# low, followed by the instruction code, the 24-bit or 32-bit address selecting location zero within the desired sector/block as above, then the data byte. The DYB Access Register is one data byte in length. The WRDYB command affects the WIP bit of the Status in the same manner as any other programming operation. CE# must be driven high after the eighth bit of data has been latched in. As soon as CE# is driven high, the WRDYB operation is initiated. While the WRDYB operation is in progress, the Status Register or Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1” during the WRDYB operation, and is “0” when it is completed. When the WRDYB operation is completed, the WEL is set to “0”. Note: The high order address bits not used by 256M must be zero. Figure 8.120 Write DYB Sequence (FBh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 34 35 36 37 38 39 2 1 0 SCK Mode 0 Data In SI SO Instruction = FBh 3-byte Address 7 6 5 4 3 High Impedence Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 140 IS25LP256, IS25WP256 Figure 8.121 Write DYB Sequence (FBh [EXTADD=1] or E1h, 4-byte address) CE # Mode 3 0 1 ... 7 8 9 39 ... 40 41 42 43 44 45 46 47 2 1 0 SCK Mode 0 Data In SI Instruction = FBh/E1h 4-byte Address 7 6 5 4 3 High Impedence SO Figure 8.122 Write DYB QPI Sequence (FBh [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 SCK Mode 0 3-byte Address FBh IO[3:0] Data In Figure 8.123 Write DYB QPI Sequence (FBh [EXTADD=1] or E1h, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 SCK Mode 0 IO[3:0] FBh/E1h Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 4-byte Address Data In 141 IS25LP256, IS25WP256 8.53 READ PPB OPERATION (RDPPB, FCh or 4RDPPB, E2h) FCh (EXTADD=0) is followed by a 3-byte address (A23-A0) or FCh (EXTADD=1) is followed by a 4-byte address (A31-A0) or E2h is followed by a 4-byte address (A31-A0) The instruction code is shifted into SI by the rising edges of the SCK signal, followed by the 24-bit or 32-bit address selecting location zero within the desired sector/block as above. Then the 8-bit PPB Access Register contents are shifted out on SO. The RDPPB/4RDPPB is supporting only SPI, not supporting QPI. It is possible to read the same PPB Access Register continuously by providing multiples of eight bits. The address of the PPB Access Register does not increment so this is not a means to read the entire PPB array. Each location must be read with a separate Read PPB command. The maximum operating clock frequency for the Read PPB command is 166MHz. Note: The high order address bits not used by 256M must be zero. Figure 8.124 Read PPB Sequence (FCh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 34 35 36 37 38 39 SCK Mode 0 SI Instruction = FCh 3-byte Address tV SO 7 6 5 2 3 4 1 0 Figure 8.125 Read PPB Sequence (FCh [EXTADD=1] or E2h, 4-byte address) CE # Mode 3 0 1 ... 7 8 9 ... 39 40 41 42 43 44 45 46 47 SCK Mode 0 SI Instruction = FCh/E2h 4-byte Address tV SO Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 7 6 5 4 3 2 1 0 142 IS25LP256, IS25WP256 8.54 PROGRAM PPB OPERATION (PGPPB, FDh or 4PGPPB, E3h) Before the Program PPB (PGPPB/4PGPPB) command is sent, a Write Enable (WREN) command must be issued. After the WREN command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register. FDh (EXTADD=0) is followed by a 3-byte address (A23-A0) or FDh (EXTADD=1) is followed by a 4-byte address (A31-A0) or E3h is followed by a 4-byte address (A31-A0) The PGPPB/4PGPPB command is entered by driving CE# low, followed by the instruction code, followed by the 24-bit or 32-bit address selecting location zero within the desired sector/block as above. The PGPPB/4PGPPB command affects the WIP bit in the same manner as any other programming operation. CE# must be driven high after the last bit of address has been latched in. As soon as CE# is driven high, the PGPPB/4PGPPB operation is initiated. While the PGPPB/4PGPPB operation is in progress, the Status Register or Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1” during the PGPPB/4PGPPB operation, and is “0” when it is completed. When the PGPPB/4PGPPB operation is completed, the WEL is set to “0”. Note: The high order address bits not used by 256M must be zero. Figure 8.126 Program PPB Sequence (FDh [EXTADD=0], 3-byte address) CE # Mode 3 0 1 ... 7 8 9 ... 31 SCK Mode 0 SI Instruction = FDh 3-byte Address High Impedence SO Figure 8.127 Program PPB Sequence (FDh [EXTADD=1] or E3h, 4-byte address) CE # Mode 3 0 1 ... 7 8 9 ... 39 SCK Mode 0 SI Instruction = FDh/E3h SO Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 4-byte Address High Impedence 143 IS25LP256, IS25WP256 Figure 8.128 Program PPB QPI Sequence (FDh [EXTADD=0], 3-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 3-byte Address FDh IO[3:0] Figure 8.129 Program PPB QPI Sequence (FDh [EXTADD=1] or E3h, 4-byte address) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 SCK Mode 0 IO[3:0] FDh/E3h Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 4-byte Address 144 IS25LP256, IS25WP256 8.55 ERASE PPB OPERATION (ERPPB, E4h) The Erase PPB (ERPPB) command sets all PPB bits to “1”. Before the ERPPB command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction code is shifted in by the rising edges of the SCK signal. CE# must be driven high after the eighth bit of the instruction byte has been latched in. This will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of the entire PPB memory array. Without CE# being driven high after the eighth bit of the instruction, the PPB erase operation will not be executed. With the internal erase cycle in progress, the user can read the value of the Write In Progress (WIP) bit to check if the operation has been completed. The WIP bit will indicate “1” when the erase cycle is in progress and “0” when the erase cycle has been completed. When the ERPPB operation is completed, the WEL is set to “0”. Erase suspend is not allowed during PPB Erase. Figure 8.130 Erase PPB Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = E4h SI High Impedance SO Figure 8.131 Erase PPB QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 E4h 145 IS25LP256, IS25WP256 8.56 READ ASP OPERATION (RDASP, 2Bh) The RDASP instruction code is shifted in by the rising edge of the SCK signal. Then the 16-bit ASP register contents is shifted out, least significant byte first, most significant bit of each byte first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the ASP register continuously by providing multiples of 16 bits. The maximum operating clock frequency for the RDASP command is 166MHz. Figure 8.132 Read ASP Sequence CE # Mode 3 0 1 2 3 4 5 8 7 6 9 ... 15 16 17 ... 23 SCK Mode 0 SI Instruction = 2Bh 1st byte Data Out tV SO 7 ... 6 2nd byte Data Out 0 15 14 ... 8 Figure 8.133 Read ASP QPI Sequence CE# Mode 3 0 1 2 3 4 5 SCK Mode 0 tV IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 2Bh 1st byte Data Out 2nd byte Data Out 146 IS25LP256, IS25WP256 8.57 PROGRAM ASP OPERATION (PGASP, 2Fh) Before the Program ASP (PGASP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After the WREN command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to enable any write operations. The PGASP command is entered by driving CE# low, followed by the instruction code and two data bytes, least significant byte first, most significant bit of each byte first. The ASP Register is two data bytes in length. The PGASP command affects the Write In Progress (WIP) bit in the same manner as any other programming operation. CE# input must be driven high after the sixteenth bit of data has been latched in. If not, the PGASP command is not executed. As soon as CE# is driven high, the PGASP operation is initiated. While the PGASP operation is in progress, the Status Register or the Extended Read Register may be read to check the value of WIP bit. The WIP bit is “1” during the PGASP operation, and is “0” when it is completed. When the PGASP operation is completed, the WEL is set to “0”. Figure 8.134 Program ASP Sequence CE # Mode 3 0 1 ... 7 8 9 ... 13 14 15 16 17 ... 21 22 23 9 8 SCK Mode 0 SI 1st byte Data In Instruction = 2Fh 7 6 2nd byte Data In ... 2 1 0 15 1 2 3 4 5 14 ... 10 High Impedence SO Figure 8.135 Program ASP QPI Sequence CE# Mode 3 0 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 2Fh 1st byte Data In 2nd byte Data In 147 IS25LP256, IS25WP256 8.58 READ PPB LOCK BIT OPERATION (RDPLB, A7h) The Read PPB Lock Bit (RDPLB) command allows the PPB Lock Register contents to be read. It is possible to read the PPB Lock Register continuously by providing multiples of eight bits. The PPB Lock Register contents may only be read when the device is in standby state with no other operation in progress. It is recommended to check the Write In Progress (WIP) bit before issuing a new command to the device. Figure 8.136 Read PPB Lock Bit Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = A7h tV SO Data Out 7 6 5 4 3 2 1 0 Figure 8.137 Read PPB Lock Bit QPI Sequence CE# Mode 3 0 1 2 3 SCK Mode 0 tV IO[3:0] A7h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 148 IS25LP256, IS25WP256 8.59 WRITE PPB LOCK BIT OPERATION (WRPLB, A6h) The Write PPB Lock Bit (WRPLB) command clears the PPB Lock (PPBLK) bit to zero. Before the WRPLB command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The WRPLB command is entered by driving CE# low, followed by the instruction code. CE# must be driven high after the eighth bit of instruction has been latched in. If not, the WRPLB command is not executed. As soon as CE# is driven high, the WRPLB operation is initiated. While the WRPLB operation is in progress, the Status Register or Extended Read Register may still be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1” during the WRPLB operation, and is “0” when it is completed. When the WRPLB operation is completed, the WEL is set to “0”. The maximum clock frequency for the WRPLB command is 166MHz. Figure 8.138 Write PPB Lock Bit Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = A6h SI High Impedance SO Figure 8.139 Write PPB Lock Bit QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 A6h 149 IS25LP256, IS25WP256 8.60 SET FREEZE BIT OPERATION (SFRZ, 91h) The Set FREEZE Bit (SFRZ) command sets FREEZE (PPB Lock Register bit7) to one. Please refer to the section 6.6.3 PPB Lock Register for more detail. Before the SFRZ command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The SFRZ command is entered by driving CE# low, followed by the instruction code. CE# must be driven high after the eighth bit of instruction has been latched in. If not, the SFRZ command is not executed. As soon as CE# is driven high, the SFRZ operation is initiated. While the SFRZ operation is in progress, the Status Register or Extended Read Register may still be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1” during the SFRZ operation, and is “0” when it is completed. When the SFRZ operation is completed, the WEL is set to “0”. The maximum clock frequency for the SFRZ command is 166MHz. Figure 8.140 Set FREEZE Bit Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = A6h SI High Impedance SO Figure 8.141 Set FREEZE Bit QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 A6h 150 IS25LP256, IS25WP256 8.61 READ PASSWORD OPERATION (RDPWD, E7h) The correct password value may be read only after it is programmed and before the Password Mode has been selected by programming the Password Protection Mode bit to “0” in the ASP Register (ASP[2]). After the Password Protection Mode is selected the RDPWD command is ignored. The RDPWD command is shifted in. Then the 64-bit Password is shifted out, least significant byte first, most significant bit of each byte first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the Password continuously by providing multiples of 64bits. The maximum operating clock frequency for the RDPWD command is 166MHz. Figure 8.142 Read password Sequence CE # Mode 3 0 1 ... 7 8 9 15 ... 16 17 ... 23 ... 64 65 71 ... SCK Mode 0 SI Instruction = E7h 1st byte Data Out tV SO 7 6 ... ... 2nd byte Data Out 0 15 14 ... 8 ... 8th byte Data Out 63 62 ... Figure 8.143 Read Password QPI Sequence CE# Mode 3 0 1 2 3 4 5 ... 16 17 SCK Mode 0 tV IO[3:0] E7h Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 1st byte Data In 2nd byte Data In ... 8th byte Data In 151 56 IS25LP256, IS25WP256 8.62 PROGRAM PASSWORD OPERATION (PGPWD, E8h) Before the Program Password (PGPWD) command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device which sets the Write Enable Latch (WEL) to enable the PGPWD operation. The password can only be programmed before the Password Mode is selected by programming the Password Protection Mode bit to “0” in the ASP Register (ASP[2]). After the Password Protection Mode is selected the PGPWD command is ignored. The PGPWD command is entered by driving CE# low, followed by the instruction code and the password data bytes, least significant byte first, most significant bit of each byte first. The password is 64bits in length. th CE# must be driven high after the 64 bit of data has been latched. If not, the PGPWD command is not executed. As soon as CE# is driven high, the PGPWD operation is initiated. While the PGPWD operation is in progress, the Status Register or Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1” during the PGPWD operation, and is “0” when it is completed. When the PGPWD operation is completed, the Write Enable Latch (WEL) is set to “0”. The maximum clock frequency for the PGPWD command is 166MHz. Figure 8.144 Program Password Sequence CE # Mode 3 0 1 ... 7 8 9 15 ... 16 17 ... 23 ... 64 65 71 ... SCK Mode 0 1st byte Data In SI Instruction = E8h 7 ... 6 ... 2nd byte Data In ... 14 15 0 ... 8 8th byte Data In 63 62 ... 56 High Impedence SO Figure 8.145 Program Password QPI Sequence CE# Mode 3 0 1 2 3 5 ... 2nd byte Data In ... 4 16 17 SCK Mode 0 IO[3:0] E8h Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 1st byte Data In 8th byte Data In 152 IS25LP256, IS25WP256 8.63 UNLOCK PASSWORD OPERATION (UNPWD, E9h) The UNPWD command is entered by driving CE# low, followed by the instruction code and the password data bytes, least significant byte first, most significant bit of each byte first. The password is 64bits in length. th CE# must be driven high after the 64 bit of data has been latched. If not, the UNPWD command is not executed. As soon as CE# is driven high, the UNPWD operation is initiated. While the UNPWD operation is in progress, the Status Register or Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1” during the UNPWD operation, and is “0” when it is completed. If the UNPWD command supplied password does not match the hidden password in the Password Register, the UNPWD command is ignored. This returns the device to standby state, ready for a new command such as a retry of the UNPWD command. If the password does match, the PPB Lock bit is set to “1”. The maximum clock frequency for the UNPWD command is 166MHz. Figure 8.146 Unlock Password Sequence CE # Mode 3 0 1 ... 7 8 9 15 ... 16 17 ... 23 ... 64 65 71 ... SCK Mode 0 1st byte Data In SI Instruction = E9h 7 ... 6 ... 2nd byte Data In ... 14 15 0 ... 8 8th byte Data In 63 62 ... 56 High Impedence SO Figure 8.147 Unlock Password QPI Sequence CE# Mode 3 0 1 2 3 5 ... 2nd byte Data In ... 4 16 17 SCK Mode 0 IO[3:0] E9h Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 1st byte Data In 8th byte Data In 153 IS25LP256, IS25WP256 8.64 GANG SECTOR/BLOCK LOCK OPERATION (GBLK, 7Eh) The Gang Sector/Block Lock (GBLK) instruction provides a quick method to set all DYB (Dynamic Protection Bit) bits to “0” at once. The sequence of issuing GBLK instruction is: drive CE# low send GBLK instruction code drive CE# high. The instruction code will be shifted into the device on the rising edge of SCK. The GBLK command is accepted in both SPI and QPI mode. The CE# must go high exactly at the byte boundary, otherwise, the instruction will be ignored. Figure 8.148 Gang Sector/Block Lock Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 7Eh SI High Impedance SO Figure 8.149 Gang Sector/Block Lock QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 7Eh 154 IS25LP256, IS25WP256 8.65 GANG SECTOR/BLOCK UNLOCK OPERATION (GBUN, 98h) The Gang Sector/Block Unlock (GBUN) instruction provides a quick method to clear all DYB (Dynamic Protection Bit) bits to “1” at once. The sequence of issuing GBUN instruction is: drive CE# low send GBUN instruction code drive CE# high. The instruction code will be shifted into the device on the rising edge of SCK. The GBUN command is accepted in both SPI and QPI mode. The CE# must go high exactly at the byte boundary, otherwise, the instruction will be ignored and not be executed. Figure 8.150 Gang Sector/Block Unlock Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 98h SI High Impedance SO Figure 8.151 Gang Sector/Block Unlock QPI Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 98h 155 IS25LP256, IS25WP256 9. ELECTRICAL CHARACTERISTICS 9.1 ABSOLUTE MAXIMUM RATINGS (1) Storage Temperature -65°C to +150°C Surface Mount Lead Soldering Temperature Standard Package 240°C 3 Seconds Lead-free Package 260°C 3 Seconds Input Voltage with Respect to Ground on All Pins -0.5V to VCC + 0.5V All Output Voltage with Respect to Ground -0.5V to VCC + 0.5V VCC IS25LP -0.5V to +6.0V IS25WP -0.5V to +2.5V Note: 1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 9.2 OPERATING RANGE Operating Temperature VCC Power Supply Extended Grade E -40°C to 105°C Extended+ Grade E1 -40°C to 125°C Automotive Grade A1 -40°C to 85°C Automotive Grade A2 -40°C to 105°C Automotive Grade A3 -40°C to 125°C IS25LP 2.3V (VMIN) – 3.6V (VMAX); 3.3V (Typ) IS25WP 1.65V (VMIN) –1.95V (VMAX); 1.8V (Typ) Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 156 IS25LP256, IS25WP256 9.3 DC CHARACTERISTICS (Under operating range) Symbol ICC1 Parameter Condition VCC Active Read current(3) Min Typ (2) Max NORD at 80MHz 4 FRD Single at 166MHz 7 9 FRD Dual at 166MHz 9 11 FRD Quad at 166MHz 11 14 FRD Single at 133MHz 6 8 FRD Dual at 133MHz 8 10 FRD Quad at 133MHz 10 13 9 FRD Quad at 83MHz 8 10 FRD Quad at 104MHz 9 11 FRD Single DDR at 66MHz 6 8 FRD Dual DDR at 66MHz 8 10 FRD Quad DDR at 66MHz 10 13 ICC2 VCC Program Current CE# = VCC 25 30 ICC3 VCC WRSR Current CE# = VCC 25 30 ICC4 VCC Erase Current (4K/32K/64K) CE# = VCC 25 30 ICC5 VCC Erase Current (CE) CE# = VCC 25 30 VCC Standby Current CMOS CE# = VCC, CE#, RESET#(4) = VCC IS25LP ISB2 CE# = VCC, CE#, RESET#(4) = VCC Deep power down current IS25WP CE# = VCC, CE#, RESET#(4) = VCC mA mA TBD (6) 85°C ISB1 Units 105°C 10 TBD (6) 125°C 50 85°C TBD (6) 105°C 5 TBD (6) 125°C 20 85°C TBD (6) 105°C 1 125°C µA µA TBD (6) TBD ILI Input Leakage Current VIN = 0V to VCC ±1(5) µA ILO Output Leakage Current VIN = 0V to VCC ±1(5) µA (1) Input Low Voltage -0.5 0.3VCC V (1) VIH Input High Voltage 0.7VCC VCC + 0.3 V VOL Output Low Voltage IOL = 100 µA 0.2 V VOH Output High Voltage IOH = -100 µA VIL VCC - 0.2 V Notes: 1. Maximum DC voltage on input or I/O pins is VCC + 0.5V. During voltage transitions, input or I/O pins may overshoot VCC by +2.0V for a period of time not to exceed 20ns. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, input or I/O pins may undershoot GND by -2.0V for a period of time not to exceed 20ns. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (Typ), TA=25°C. 3. Outputs are unconnected during reading data so that output switching current is not included. 4. Only for the additional RESET# pin. 5. The Max of ILI and ILO for the additional RESET# pin is ±2 µA. 6. These parameters are characterized and are not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 157 IS25LP256, IS25WP256 9.4 AC MEASUREMENT CONDITIONS Symbol Max Units Load Capacitance up to 104MHz/52MHz DTR 30 pF Load Capacitance up to 166MHz/80MHz DTR 15 pF TR,TF Input Rise and Fall Times 5 ns VIN Input Pulse Voltages 0.2VCC to 0.8VCC V VREFI Input Timing Reference Voltages 0.3VCC to 0.7VCC V VREFO Output Timing Reference Voltages 0.5VCC V CL Parameter Min Figure 9.1 Output test load & AC measurement I/O Waveform 0.8VCC Input 1.8k VCC/2 AC Measurement Level 0.2VCC OUTPUT PIN 1.2k 15/30pf Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 158 IS25LP256, IS25WP256 9.5 AC CHARACTERISTICS (Under operating range, refer to section 9.4 for AC measurement conditions) Symbol fCT fC2, fT2, fQ2 fC Min Clock Frequency for fast read mode: SPI, Dual, Dual I/O, Quad I/O, and QPI. Clock Frequency for fast read DTR: SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, and QPI DTR. Clock Frequency for read mode SPI Typ (3) Max Units 0 166 MHz 0 80 MHz 0 80 MHz (1) SCK Rise Time (peak to peak) 0.1 V/ns (1) SCK Fall Time ( peak to peak) 0.1 V/ns tCLCH tCHCL Parameter For read mode 45% fC tCKH SCK High Time tCKL SCK Low Time tCEH CE# High Time 7 ns tCS CE# Setup Time 3 ns tCH CE# Hold Time 3 ns tDS Data In Setup Time tDH Data in Hold Time tV Output Valid tOH For others For read mode For others Normal Mode DTR Mode Normal Mode DTR Mode ns 45% fCT/C2/T2/Q2 45% fC ns 45% fCT/C2/T2/Q2 2 ns 1.5 2 ns 1.5 @ 166MHz (CL = 15pF) 7 @ 133MHz (CL = 15pF) 7 @ 104MHz (CL = 30pF) 8 Output Hold Time ns 2 ns (1) tDIS Output Disable Time tHLCH HOLD Active Setup Time relative to SCK 2 ns tCHHH HOLD Active Hold Time relative to SCK 2 ns tHHCH HOLD Not Active Setup Time relative to SCK 2 ns tCHHL HOLD Not Active Hold Time relative to SCK 2 tLZ 8 ns ns (1) HOLD to Output Low Z 8 ns (1) HOLD to Output High Z 8 ns tHZ tEC Sector Erase Time (4Kbyte) 50 300 ms Block Erase Time (32Kbyte) 0.14 0.75 s Block Erase time (64Kbyte) 0.2 1.0 s 50 180 s 0.2 0.8 ms Chip Erase Time tPP 256Mb Page Program Time Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 159 IS25LP256, IS25WP256 Symbol tRES1 (1) Parameter Deep power down tW Write Status Register time (1) tSRST (1) tRESET (1) tHWRST (1) Typ Release deep power down (1) tDP tSUS Min (3) Max Units 15 µs 3 µs 15 ms Suspend to read ready 100 µs Software Reset recovery time 100 µs RESET# pin low pulse width Hardware Reset recovery time 2 1 (2) µs 100 µs Notes: 1. These parameters are characterized and not 100% tested. 2. If the RESET# pulse is driven for a period shorter than 1µs (tRESET minimum), it may still reset the device, however the 1µs minimum period is recommended to ensure reliable operation. 3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (Typ), TA=25°C. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 160 IS25LP256, IS25WP256 9.6 SERIAL INPUT/OUTPUT TIMING Figure 9.2 SERIAL INPUT/OUTPUT TIMING (Normal Mode) (1) tCEH CE# tCH tCS tCKH SCK tDS SI tCKL tDH VALID IN VALID IN tOH tV SO HI-Z tDIS HI-Z VALID OUTPUT Note1: For SPI Mode 0 (0,0) Figure 9.3 SERIAL INPUT/OUTPUT TIMING (DTR Mode) (1) tCEH CE# tCH tCS tCKH SCK tDS SI tCKL tDH VALID IN VALID IN VALID IN tV SO HI-Z tV Output tOH Output tDIS HI-Z Note1: For SPI Mode 0 (0,0) Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 161 IS25LP256, IS25WP256 Figure 9.4 HOLD TIMING CE# tHLCH tCHHL tHHCH SCK tCHHH tHZ tLZ SO SI HOLD# Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 162 IS25LP256, IS25WP256 9.7 POWER-UP AND POWER-DOWN At Power-up and Power-down, the device must be NOT SELECTED until Vcc reaches at the right level. (Adding a simple pull-up resistor on CE# is recommended.) Power up timing VCC VCC(max) All Write Commands are Rejected Chip Selection Not Allowed VCC(min) Reset State tVCE Read Access Allowed V(write inhibit) Device fully accessible tPUW Symbol Min. Vcc(min) to CE# Low 1 (1) Power-up time delay to write instruction 1 tPUW VWI Parameter (1) tVCE (1) Write Inhibit Voltage Max Unit ms 10 IS25LP 2.1 IS25WP 1.3 ms V Note: These parameters are characterized and not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 163 IS25LP256, IS25WP256 9.8 PROGRAM/ERASE PERFORMANCE Parameter Typ Max Unit Sector Erase Time (4Kbyte) Block Erase Time (32Kbyte) Block Erase Time (64Kbyte) 45 300 ms 0.15 0.75 s 0.3 1.5 s Chip Erase Time Page Programming Time Byte Program 256Mb 60 180 s 0.2 0.8 ms 8 40 µs Note: These parameters are characterized and not 100% tested. 9.9 RELIABILITY CHARACTERISTICS Parameter Min Unit Test Method Endurance 100,000 Cycles JEDEC Standard A117 Data Retention 20 Years JEDEC Standard A103 ESD – Human Body Model 2,000 Volts JEDEC Standard A114 ESD – Machine Model 200 Volts JEDEC Standard A115 Latch-Up 100 + ICC1 mA JEDEC Standard 78 Note: These parameters are characterized and not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 164 IS25LP256, IS25WP256 10. PACKAGE TYPE INFORMATION 10.1 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 8X6MM (L) SYMBOL DIMENSION IN MM MIN. NOM MAX A 0.70 0.75 0.80 A1 0.00 0.02 0.05 A2 --- 0.20 --- D 7.90 8.00 8.10 E 5.90 6.00 6.10 D1 4.65 4.70 4.75 E1 4.55 4.60 4.65 e --- 1.27 --- b 0.35 0.40 0.48 L 0.4 0.50 0.60 Note: All dimensions are in millimeters. Lead co-planarity is 0.08mm. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 165 IS25LP256, IS25WP256 10.2 16-LEAD PLASTIC SMALL OUTLINE PACKAGE (300 MILS BODY WIDTH) (M) Millimeters 10.0 10.65 7.4 9 7.6 16 10.1 10.5 0.23 0.32 Detail A 1 8 2.25 2.4 2.35 2.65 Detail A 1.27 0.1 0.33 0.51 0.1 0.3 0.4 1.27 00 80 Note: All dimensions are in millimeters. Lead co-planarity is 0.08mm. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 166 IS25LP256, IS25WP256 10.3 24-BALL THIN PROFILE FINE PITCH BGA 6X8MM 4X6 BALL ARRAY (G) 4 D 3 2 1 A1 Corner Index Area A B E E1 C e D E F (TOP VIEW) nX Øb e D1 (BOTTOM VIEW) A1 Corner Index Area A3 A A2 A1 SYMBOL DIMENSIONS (MM) MIN NOM MAX A - - 1.20 A1 0.27 - 0.37 A2 0.21 REF A3 0.54 REF D 6 BSC E 8 BSC D1 - 3.00 - E1 - 5.00 - e - 1.00 - b - 0.40 - Note: All dimensions are in millimeters. Lead co-planarity is 0.08mm. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 167 IS25LP256, IS25WP256 10.4 24- BALL THIN PROFILE FINE PITCH BGA 6X8MM 5X5 BALL ARRAY (H) 5 D 4 3 2 1 A1 Corner Index Area A B e E E1 C D E nX Øb (TOP VIEW) e D1 (BOTTOM VIEW) A1 Corner Index Area A3 A A2 A1 SYMBOL DIMENSIONS (MM) MIN NOM MAX A - - 1.20 A1 0.27 - 0.37 A2 0.21 REF A3 0.54 REF D 6 BSC E 8 BSC D1 - 4.00 - E1 - 4.00 - e - 1.00 - b - 0.40 - Note: All dimensions are in millimeters. Lead co-planarity is 0.08mm. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 168 IS25LP256, IS25WP256 11. ORDERING INFORMATION – Valid Part Numbers IS25LP256 - J B L E TEMPERATURE RANGE E = Extended (-40°C to +105°C) E1 = Extended+ (-40°C to +125°C) A1 = Automotive Grade (-40°C to +85°C) A2 = Automotive Grade (-40°C to +105°C) A3 = Automotive Grade (-40°C to +125°C) PACKAGING CONTENT L = RoHS compliant PACKAGE Type L = 8-contact WSON (8x6mm) M = 16-pin SOIC 300mil (1) G = 24-ball TFBGA (6x8mm) 4x6 ball array (1) H = 24-ball TFBGA (6x8mm) 4x6 ball array W = KGD (Call Factory) Option J = Standard R = additional RESET# pin option Die Revision Blank = First Revision Density 256 = 256 Megabit BASE PART NUMBER IS = Integrated Silicon Solution Inc. 25LP = FLASH, 2.30V ~ 3.60V, QPI 25WP = FLASH, 1.65V ~ 1.95V, QPI Note: 1. For the additional RESET# pin option for 24-ball TFBGA 6x8mm packages, call Factory Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 169 IS25LP256, IS25WP256 Density, Voltage 256M, 3V 256M, 1.8V Frequency (MHz) STR 166, DTR 80 STR 166, DTR 80 Order Part Number(1) Package IS25LP256-JLLE IS25LP256-JLLE1 8-contact WSON 8x6mm IS25LP256-JMLE IS25LP256-JMLE1 16-pin SOIC 300mil IS25LP256-JGLE IS25LP256-JGLE1 24-ball TFBGA 6x8mm 4x6 ball array(3) IS25LP256-JHLE IS25LP256-JHLE1 24-ball TFBGA 6x8mm 5x5 ball array(3) IS25LP256-RMLE IS25LP256-RMLE1 16-pin SOIC 300mil(2) IS25LP256-JLLA* 8-contact WSON (8x6mm) (Call Factory) IS25LP256-JMLA* 16-pin SOIC 300mil (Call Factory) IS25LP256-JGLA* 24-ball TFBGA 6x8mm 4x6 ball array(3) (Call Factory) IS25LP256-JHLA* 24-ball TFBGA 6x8mm 5x5 ball array(3) (Call Factory) IS25LP256-RMLA* 16-pin SOIC 300mil(2) (Call Factory) IS25LP256-JWLE KGD (Call Factory) IS25WP256-JLLE IS25WP256-JLLE1 8-contact WSON 8x6mm IS25WP256-JMLE IS25WP256-JMLE1 16-pin SOIC 300mil IS25WP256-JGLE IS25WP256-JGLE1 24-ball TFBGA 6x8mm 4x6 ball array(3) IS25WP256-JHLE IS25WP256-JHLE1 24-ball TFBGA 6x8mm 5x5 ball array(3) IS25WP256-RMLE IS25WP256-RMLE1 16-pin SOIC 300mil(2) IS25WP256-JLLA* 8-contact WSON (8x6mm) (Call Factory) IS25WP256-JMLA* 16-pin SOIC 300mil (Call Factory) IS25WP256-JGLA* 24-ball TFBGA 6x8mm 4x6 ball array(3) (Call Factory) IS25WP256-JHLA* 24-ball TFBGA 6x8mm 5x5 ball array(3) (Call Factory) IS25WP256-RMLA* 16-pin SOIC 300mil(2) (Call Factory) IS25WP256-JWLE KGD (Call Factory) Notes: 1. A*= A1, A2, A3: Meets AEC-Q100 requirements with PPAP, E1= Extended+ non-Auto qualified Temp Grades: E= -40 to 105°C, E1= -40 to 125°C, A1= -40 to 85°C, A2= -40 to 105°C, A3= -40 to 125°C 2. The dedicated parts have additional RESET# pin on pin3. 3. For the additional RESET# pin option for 24-ball TFBGA 6x8mm packages, call Factory. Integrated Silicon Solution, Inc.- www.issi.com Rev.00A 05/14/2015 170