IS61DDSB22M18C IS61DDSB21M36C 2Mx18, 1Mx36 36Mb DDR-II (Burst 2) SIO SYNCHRONOUS SRAM FEATURES 1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid window. Seperate I/O read and write ports. Synchronous pipeline read with self-timed late write operation. Double Data Rate (DDR) interface for read and write input ports. Fixed 2-bit burst for read and write operations. Clock stop support. Two input clocks (K and K#) for address and control registering at rising edges only. Two input clocks (C and C#) for data output control. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. +1.8V core power supply and 1.5V to 1.8V VDDQ, used with 0.75V to 0.9V VREF. HSTL input and output interface. Registered addresses, write and read controls, byte writes, data in, and data outputs. Full data coherency. Boundary scan using limited set of JTAG 1149.1 functions. Byte write capability. Fine ball grid array (FBGA) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array Programmable impedance output drivers via 5x user-supplied precision resistor. ADVANCED INFORMATION JANUARY 2015 DESCRIPTION The 36Mb IS61DDSB21M36C and IS61DDSB22M18C are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have a separate I/O bus. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operations of these DDR-II (Burst of 2) SIO SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Reads and writes are performed in double data rate. The following are registered internally on the rising edge of the K clock: Read/write address Read enable Write enable Byte writes for first burst address Data-in for first burst address The following are registered on the rising edge of the K# clock: Byte writes for second burst address Data-in for second burst address Byte writes can change with the corresponding data-in to enable or disable writes on a per-byte basis. An internal write buffer enables the data-ins to be registered one cycle after the write address. The first data-in burst is clocked one cycle later than the write command signal, and the second burst is timed to the following rising edge of the K# clock. During the burst read operation, the data-outs from the first bursts are updated from output registers of the second rising edge of the C# clock (starting one and half cycles later after read command). The data-outs from the second bursts are updated with the third rising edge of the C clock. The K and K# clocks are used to time the data-outs whenever the C and C# clocks are tied high. The device is operated with a single +1.8V power supply and is compatible with HSTL I/O interfaces. Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 1 IS61DDSB22M18C IS61DDSB21M36C Package ballout and description x36 FBGA Ball Configuration (Top View) 1 2 3 1 NC/SA 4 1 5 6 7 8 9 10 11 1 A CQ# NC/SA R/W# BW 2# K# BW 1# LD# SA NC/SA B Q27 Q18 D18 SA BW 3# K BW 0# SA D17 Q17 CQ Q8 C D27 Q28 D19 VSS SA SA SA VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H Doff# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS SA SA SA VSS Q10 D9 D1 P Q35 D35 Q26 SA SA C SA SA Q9 D0 Q0 R TDO TCK SA SA SA C# SA SA SA TMS TDI 9 10 Notes: 1. The following balls are reserved for higher densities: 3A for 72Mb, 10A for 144Mb and 2A for 288Mb. x18 FBGA Ball Configuration (Top View) 1 2 A CQ# NC/SA B NC Q9 C NC D NC E NC F 3 1 4 5 6 7 SA R/W# BW 1# K# NC/SA D9 SA NC K NC D10 VSS SA D11 Q10 VSS VSS NC Q11 VDDQ VSS NC Q12 D12 VDDQ G NC D13 Q13 H Doff# VREF J NC NC K NC L 8 1 11 1 LD# SA NC/SA CQ BW 0# SA NC NC Q8 SA SA VSS NC Q7 D8 VSS VSS VSS NC NC D7 VSS VSS VDDQ NC D6 Q6 VDD VSS VDD VDDQ NC NC Q5 VDDQ VDD VSS VDD VDDQ NC NC D5 VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS SA SA SA VSS NC NC D1 P NC NC Q17 SA SA C SA SA NC D0 Q0 R TDO TCK SA SA SA C# SA SA SA TMS TDI Notes: 1. The following balls are reserved for higher densities: 10A for 72Mb and 2A for 144Mb, Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 2 IS61DDSB22M18C IS61DDSB21M36C Ball Descriptions Symbol Type K, K# Input C, C# Input CQ, CQ# Output Doff# Input SA Input D0 - Dn Input Q0 - Qn Output R/W# Input LD# Input BW x# Input Description Input clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data on the rising edge of K and the rising edge of K#. K# is ideally 180 degrees out of phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges. These balls cannot remain VREF level. Input clock for output data. C and C# are used to clock out the READ data. They can be used together to deskew the flight times of various devices on the board back to the controller. See application example for further details. Synchronous echo clock outputs: The edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. These signals are free running clocks and do not stop when Q tri-states. DLL disable and reset input : when low, this input causes the DLL to be bypassed and reset the previous DLL information. When high, DLL will start operating and lock the frequency after tCK lock time. The device behaves in one read latency mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz. Synchronous address inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K. These inputs are ignored when device is deselected. Synchronous data inputs: Input data must meet setup and hold times around the rising edges of K and K# during WRITE operations. See BALL CONFIGURATION figures for ball site location of individual signals. The x18 device uses D0~D17. D18~D35 should be treated as NC pin. The x36 device uses D0~D35. Synchronous data outputs: Output data is synchronized to the respective C and C#, or to the respective K and K# if C and /C are tied to high. This bus operates in response to R# commands. See BALL CONFIGURATION figures for ball site location of individual signals. The x18 device uses Q0~Q17. Q18~Q35 should be treated as NC pin. The x36 device uses Q0~Q35. Synchronous Read or Write input. When LD# is low, this input designates the access type (read when it is High, write when it is Low) for loaded address. R/W# must meet the setup and hold times around edge of K. Synchronous load. This input is brought Low when a bus cycle sequence is defined. This definition includes address and read/write direction. Synchronous byte writes: When low, these inputs cause their respective byte to be registered and written during WRITE cycles. These signals are sampled on the same edge as the corresponding data and must meet setup and hold times around the rising edges of K and #K for each of the two rising edges comprising the WRITE cycle. See Write Truth Table for signal to data relationship. HSTL input reference voltage: Nominally VDDQ/2, but may be adjusted to improve system noise margin. Provides a reference voltage for the HSTL input buffers. Power supply: 1.8 V nominal. See DC Characteristics and Operating Conditions for range. VDD Input reference Power VDDQ Power Power supply: Isolated output buffer supply. Nominally 1.5 V. See DC Characteristics and Operating Conditions for range. VSS Ground Ground of the device ZQ Input Output impedance matching input: This input is used to tune the device outputs to the system data bus impedance. DQ and CQ output impedance are set to 0.2xRQ, where RQ is a resistor from this ball to ground. This ball can be connected directly to VDDQ, which enables the minimum impedance mode. This ball cannot be connected directly to VSS or left unconnected. TMS, TDI, TCK Input IEEE1149.1 input pins for JTAG. TDO Output IEEE1149.1 output pins for JTAG. NC N/A No connect: These signals should be left floating or connected to ground to improve package heat dissipation. VREF Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 3 IS61DDSB22M18C IS61DDSB21M36C SRAM Features description Block Diagram 36 (18) D (Data-In) Data Register 36 (18) 36 (18) Write Driver 72 (36) LD# R/W# 4 (2) Output Register 72 (36) Output Driver 1M x 36 (2M x 18) Memory Array Output Select 19 (20) Sense Amplifiers 36 (18) Address Register Address Decoder 19 (20) Address Q (Data-out) 2 CQ, CQ# (Echo Clocks) Control Logic BWx# K K# C C# Clock Generator Select Output Control Doff# Note: Numerical values in parentheses refer to the x18 device configuration. Read Operations The SRAM operates continuously in a burst-of-two mode. Read cycles are started by registering R/W# in active high state at the rising edge of the K clock. A second set of clocks, C and C#, are used to control the timing to the outputs. A set of free-running echo clocks, CQ and CQ#, are produced internally with timings identical to the data-outs. The echo clocks can be used as data capture clocks by the receiver device. When the C and C# clocks are connected high, the K and K# clocks assume the function of those clocks. In this case, the data corresponding to the first address is clocked one and half cycles later by the rising edge of the K# clock. The data corresponding to the second burst is clocked two cycles later by the following rising edge of the K clock. Whenever LD# is low, a new address is registered at the rising edge of the K clock. A NOP operation (LD# is high) does not terminate the previous read. The output drivers disable automatically to a high state. Write Operations Write operations can also be initiated at every other rising edge of the K clock whenever R/W# is low. The write address is also registered at that time. When the address needs to change, LD# needs to be low simultaneously to be registered by the rising edge of K. Again, the write always occurs in bursts of two. The write data is provided in a ‘late write’ mode; that is, the data-in corresponding to the first address of the burst, is presented one cycle later or at the rising edge of the following K clock. The data-in corresponding to the second write burst address follows next, registered by the rising edge of K#. The data-in provided for writing is initially kept in write buffers. The information on these buffers is written into the array on the third write cycle. A read cycle to the last two write address produces data from the write buffers. Similarly, a read address followed by the same write address produces the latest write data. The SRAM maintains data coherency. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 4 IS61DDSB22M18C IS61DDSB21M36C During a write, the byte writes independently control which byte of any of the two burst addresses is written (see X18/X36 Write Truth Tables and Timing Reference Diagram for Truth Table). Whenever a write is disabled (R/W# is high at the rising edge of K), data is not written into the memory. RQ Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to enable the SRAM to adjust its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the SRAM. For example, an RQ of 250Ω results in a driver impedance of 50Ω. The allowable range of RQ to guarantee impedance matching is between 175Ω and 350Ω at VDDQ=1.5V. The RQ resistor should be placed less than two inches away from the ZQ ball on the SRAM module. The capacitance of the loaded ZQ trace must be less than 7.5pF. The ZQ pin can also be directly connected to VDDQ to obtain a minimum impedance setting. ZQ should not be connected to VSS. Programmable Impedance and Power-Up Requirements Periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by drifts in supply voltage and temperature. During power-up, the driver impedance is in the middle of allowable impedances values. The final impedance value is achieved within 1024clock cycles. Clock Consideration This device uses an internal DLL for maximum output data valid window. It can be placed in a stopped-clock mode to minimize power and requires only 1024 cycles to restart. No clocks can be issued until V DD reaches its allowable operating range. Single Clock Mode This device can be also operated in single-clock mode. In this case, C and C# are both connected high at power-up and must never change. Under this condition, K and K# control the output timings. Either clock pair must have both polarities switching and must never connect to VREF, as they are not differential clocks. Delay Locked Loop (DLL) Delay Lock Loop (DLL) is a new system to align the output data coincident with clock rising or falling edge to enhance the output valid timing characteristics. It is locked to the clock frequency and is constantly adjusted to match the clock frequency. Therefore device can have stable output over the temperature and voltage variation. DLL has a limitation of locking range and jitter adjustment which are specified as tKHKH and tKCvar respectively in the AC timing characteristics. In order to turn this feature off, applying logic low to the Doff# pin will bypass this. In the DLL off mode, the device behaves with one cycle latency and a longer access time which is known in DDR-I or legacy QUAD mode. The DLL can also be reset without power down by toggling Doff# pin low to high or stopping the input clocks K and K# for a minimum of 30ns.(K and K# must be stayed either at higher than VIH or lower than VIL level. Remaining Vref is not permitted.) DLL reset must be issued when power up or when clock frequency changes abruptly. After DLL being reset, it gets locked after 2048 cycles of stable clock. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 5 IS61DDSB22M18C IS61DDSB21M36C Power-Up and Power-Down Sequences 1) 2) The recommendation of voltage apply sequence is : VDD → VDDQ →VREF → VIN Notes: VDDQ can be applied concurrently with VDD. VREF can be applied concurrently with VDDQ. After power and clock signals are stabilized, device can be ready for normal operation after tKC-Lock cycles. In tKClock cycle period, device initializes internal logics and locks DLL. Depending on /Doff status, locking DLL will be skipped. The following timing pictures are possible examples of power up sequence. Sequence1. /Doff is fixed low After tKC-lock cycle of stable clock, device is ready for normal operation. Power On stage Unstable Clock Period Stable Clock period Read to use K K# >tKC-lock for device initialization VDD VDDQ VREF VIN Note) All inputs including clocks must be either logically High or Low during Power On stage. Timing above shows only one of cases. Sequence2. /Doff is controlled and goes high after clock being stable. Power On stage Unstable Clock Period Stable Clock period Read to use K K# Doff# >tKC-lock for device initialization VDD VDDQ VREF VIN Note) All inputs including clocks must be either logically High or Low during Power On stage. Timing above shows only one of cases. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 6 IS61DDSB22M18C IS61DDSB21M36C Sequence3. /Doff is controlled but goes high before clock being stable. Because DLL has a risk to be locked with the unstable clock, DLL needs to be reset and locked with the stable input. a) K-stop to reset. If K or K# stays at VIH or VIL for more than 30nS, DLL will be reset and ready to re-lock. In tKCLock period, DLL will be locked with a new stable value. Device can be ready for normal operation after that. Power On stage Unstable Clock Period K-Stop Stable Clock period Read to use K K# Doff# >30nS >tKC-lock for device initialization VDD VDDQ VREF VIN Note) All inputs including clocks must be either logically High or Low during Power On stage. Timing above shows only one of cases. a) /Doff Low to reset. If /Doff toggled low to high, DLL will be reset and ready to re-lock. In tKC-Lock period, DLL will be locked with a new stable value. Device can be ready for normal operation after that. Power On stage Unstable Clock Period Doff reset DLL Stable Clock period Read to use K K# Doff# >tDoffLowToReset >tKC-lock for device initialization VDD VDDQ VREF VIN Note) Applying DLL reset sequences (sequence 3a, 3b) are also required when operating frequency is changed without power off. Note) All inputs including clocks must be either logically High or Low during Power On stage. Timing above shows only one of cases. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 7 IS61DDSB22M18C IS61DDSB21M36C Application Example The following figure depicts an implementation of four 2M x 18 DDR-II SIO SRAMs with seperate I/Os. In this application example, the second pair of C and C# clocks is delayed such that the return data meets the data setup and hold times at the bus master. Vt R Address SA Read& Write Control R/W# New Address Control LD# Byte Write Control BWx # Source CLK SRAM#1 K/K# Return CLK Vt Memory Controller R R Vt Data Out Data In SRAM# 1 CQ SRAM# 4 CQ C/C# D Q CQ/ CQ# ZQ RQ = 250Ω SA R = 50Ω V t = V REF R/W# LD# BWx # SRAM#4 K/K# C/C# D Q CQ/ CQ# ZQ RQ = 250Ω Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 8 IS61DDSB22M18C IS61DDSB21M36C State Diagram Power-Up /Load NOP Load /LOAD Load New Address Read Load DDR-II Read /LOAD Write Load DDR-II Write Notes: 1. Internal burst counter is fixed as two-bit linear; that is, when first address is A0+0, next internal burst address is A0+1. 2. Read refers to read active status with R/W# = High. 3. Write refers to write active status with R/W# = LOW. 4. Load refers to read new address active status with LD# = low. 5. Load is read new address inactive status with LD = high. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 9 IS61DDSB22M18C IS61DDSB21M36C Clock Truth Table (Use the following table with the Timing Reference Diagram for Truth Table.) Clock Controls Data Out / Data In Mode K LD# R/W# QA / DB QA+1 / DB+1 Stop Clock Stop X X Previous State Previous State No Operation (NOP) L→H H X High-Z High-Z Read L→H L H DOUT (A+0) at C# (t+1.0) ↑ DOUT (A+1) at C (t+2.0) ↑ Write L→H L L DIN(A+0) at K (t+1.0) ↑ DIN (A+1) at K# (t+1.0) ↑ Notes: 1. X = “don’t care”; H = logic “1”; L = logic “0”. 2. A read operation is started when control signal R/W# is active high. 3. A write operation is started when control signal R/W# is active low. 4. Before entering into stop clock, all pending read and write commands must be completed. 5. For timing definitions, refer to the AC Timing Characteristics table. Signals must meet AC specifications at timings indicated in parenthesis with respect to switching clocks K,K#,C, and C#. x18 Write Truth Table (Use the following table with the Timing Reference Diagram for Truth Table.) Operation K (t+4.0) K# (t+4.0) BW 0 BW 1 DB Write Byte 0 L→H L H D0-8 (t+4.0) Write Byte 1 L→H H L D9-17 (t+4.0) Write All Bytes L→H L L D0-17 (t+4.0) Abort Write L→H H H Don't Care DB+1 Write Byte 0 L→H L H D0-8 (t+4.5) Write Byte 1 L→H H L D9-17 (t+4.5) Write All Bytes L→H L L D0-17 (t+4.5) Abort Write L→H H H Don't Care Notes: 1. For all cases, R/W# needs to be active low during the rising edge of K occurring at time t. 2. For timing definitions refer to the AC Timing Characteristics table. Signals must meet AC specifications with respect to switching clocks K and K#. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 10 IS61DDSB22M18C IS61DDSB21M36C x36 Write Truth Table (Use the following table with the Timing Reference Diagram for Truth Table.) Operation K (t+4.0) K# (t+4.0) BW 0 BW 1 BW 2 BW 3 DB Write Byte 0 L→H L H H H D0-8 (t+4.0) Write Byte 1 L→H H L H H D9-17 (t+4.0) Write Byte 2 L→H H H L H D18-26 (t+4.0) Write Byte 3 L→H H H H L D27-35 (t+4.0) Write All Bytes L→H L L L L D0-35 (t+4.0) Abort Write L→H Don't Care DB+1 H H H H Write Byte 0 L→H L H H H D0-8 (t+4.5) Write Byte 1 L→H H L H H D9-17 (t+4.5) Write Byte 2 L→H H H L H D18-26 (t+4.5) Write Byte 3 L→H H H H L D27-35 (t+4.5) Write All Bytes L→H L L L L D0-35 (t+4.5) Abort Write L→H H H H H Don't Care Notes: 1. For all cases, R/W# needs to be active low during the rising edge of K occurring at time t. 2. For timing definitions refer to the AC Timing Characteristics table. Signals must meet AC specifications with respect to switching clocks K and K#. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 11 IS61DDSB22M18C IS61DDSB21M36C Electrical Specifications Absolute Maximum Ratings Parameter Symbol Min Max Units Power Supply Voltage VDD 0.5 2.9 V I/O Power Supply Voltage VDDQ 0.5 2.9 V DC Input Voltage VIN 0.5 VDD+0.3 V Data Out Voltage VDOUT 0.5 2.6 V Junction Temperature TJ - 110 °C Storage Temperature TSTG 55 +125 °C Note: Stresses greater than those listed in this table can cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Temperature Range Temperature Range Symbol Min Max Units Commercial TA 0 +70 °C Industrial TA 40 +85 °C DC Electrical Characteristics (Over the Operating Temperature Range, VDD=1.8V±5%) Parameter Max TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Units Notes mA 1,2 mA 1,2 mA 1,2 2 +2 µA 3 ILO 2 +2 µA Output “high” level voltage (IOH=100uA, Nominal ZQ) VOH VDDQ0.2 VDDQ V Output “low” level voltage (IOL= 100uA, Nominal ZQ) VOL VSS VSS+0.2 V x36 Average Power Supply Operating Current (IOUT=0, VIN=VIH or VIL ) x18 Average Power Supply Operating Current (IOUT=0, VIN=VIH or VIL ) Power Supply Standby Current (R=VIH, W=VIH. All other inputs=VIH or VIL, IIH=0) Input leakage current ( 0 ≤VIN≤VDDQ for all input balls except VREF, ZQ, TCK, TMS, TDI ball) Output leakage current (0 ≤VOUT ≤VDDQ for all output balls except TDO ball; Output must be disabled.) Symbol IDD25 IDD30 IDD33 IDD40 IDD25 IDD30 IDD33 IDD40 ISB25 ISB30 ISB33 ISB40 Min ILI Notes: 1. IOUT = chip output current. 2. The numeric suffix indicates the part operating at speed, as indicated in AC Timing Characteristics table (that is, IDD30 indicates 3.0ns cycle time). 3. DOFF# Ball does not follow this spec, ILI = ±5uA Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 12 IS61DDSB22M18C IS61DDSB21M36C Recommended DC Operating Conditions (Over the Operating Temperature Range) Parameter Symbol Min Typical Max Units Notes Supply Voltage VDD 1.8–5% 1.8 1.8+5% V 1 Output Driver Supply Voltage VDDQ 1.4 1.5 VDD V 1 Input High Voltage VIH VREF+0.1 - VDDQ+0.2 V 1, 2 Input Low Voltage VIL –0.2 - VREF –0.1 V 1, 3 VREF 0.68 0.75 0.95 V 1, 5 VIN-CLK –0.2 - VDDQ+0.2 V 1, 4 Input Reference Voltage Clock Signal Voltage Notes: 1. All voltages are referenced to VSS. All VDD, VDDQ, and VSS pins must be connected. 2. VIH(max) AC = See 0vershoot and Undershoot Timings. 3. VIL(min) AC = See 0vershoot and Undershoot Timings. 4. VIN-CLK specifies the maximum allowable DC excursions of each clock (K, K#, C and C#). 5. Peak-to-peak AC component superimposed on VREF may not exceed 5% of VREF. Overshoot and Undershoot Timings 20% Min Cycle Time 20% Min Cycle Time VDDQ + 0.6V GND VDDQ GND - 0.6V VIH(max) AC Overshoot Timing Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 VIL(min) AC Undershoot Timing 13 IS61DDSB22M18C IS61DDSB21M36C Typical AC Input Characteristics Parameter Symbol Min AC Input Logic HIGH VIH (AC) VREF+0.2 AC Input Logic LOW VREF–0.2 VIL (AC) Clock Input Logic HIGH VIH-CLK (AC) Clock Input Logic LOW VIL-CLK (AC) Max VREF+0.2 VREF–0.2 Units Notes V 1, 2, 3, 4 V 1, 2, 3, 4 V 1, 2, 3 V 1, 2, 3 Notes: 1. The peak-to-peak AC component superimposed on VREF may not exceed 5% of the DC component of VREF. 2. Performance is a function of VIH and VIL levels to clock inputs. 3. See the AC Input Definition diagram. 4. See the AC Input Definition diagram. The signals should swing monotonically with no steps rail-to-rail with input signals never ringing back past VIH (AC) and VIL (AC) during the input setup and input hold window. VIH (AC) and VIL (AC) are used for timing purposes only. AC Input Definition K# VREF K VRAIL VIH(AC) Setup Time Hold Time VREF VIL(AC) V-RAIL PBGA Thermal Characteristics Parameter Symbol 13x15 BGA 15x17 BGA Units Thermal resistance (junction to ambient at airflow = 1m/s) RθJA 19.6 18.0 °C/W Thermal resistance (junction to pins) RθJB 4.02 3.30 °C/W Thermal resistance (junction to case) RθJC 4.53 4.20 °C/W Note: these parameters are guaranteed by design and tested by a sample basis only. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 14 IS61DDSB22M18C IS61DDSB21M36C Pin Capacitance Parameter Symbol Input capacitance Test Condition CIN DQ capacitance (DQ0–DQx) CDQ Clocks Capacitance (K, K, C, C) CCLK ° Max Units 5 pF 6 pF 4 pF Note: these parameters are guaranteed by design and tested by a sample basis only. Programmable Impedance Output Driver DC Electrical Characteristics (Over the Operating Temperature Range, VDD=1.8V±5%, VDDQ=1.5V/1.8V) Parameter Symbol Min Max Units Notes Output Logic HIGH Voltage VOH VDDQ /2 -0.12 VDDQ /2 + 0.12 V 1, 3 Output Logic LOW Voltage VOL VDDQ /2 -0.12 VDDQ /2 + 0.12 V 2, 3 Notes: 1. VDDQ 2 | IOH | RQ 5 2. VDDQ 2 | IOL | RQ 5 3. Parameter Tested with RQ=250Ω and VDDQ=1.5V AC Test Conditions (Over the Operating Temperature Range, VDD=1.8V±5%, VDDQ=1.5V/1.8V) Parameter Symbol Conditions Units VDDQ 1.5/1.8 V VIH VREF+0.5 V Input Logic LOW Voltage VIL VREF–0.5 V Input Reference Voltage VREF 0.75/0.9 V Input Rise Time TR 2.0 V/ns Input Fall Time TF 2.0 V/ns Output Timing Reference Level VREF V Clock Reference Level VREF V Output Drive Power Supply Voltage Input Logic HIGH Voltage Output Load Conditions Notes 1, 2 Notes: 1. See AC Test Loading. 2. Parameter Tested with RQ=250Ω and VDDQ=1.5V Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 15 IS61DDSB22M18C IS61DDSB21M36C AC TEST LOADING (a) Unless otherwise noted, AC test loading assume this condition. VREF 50Ω 50Ω Output Test Comparator VREF (b) tCHQZ and tCHQX1 are specified with 5pF load capacitance and measured when transition occurs ±100mV from the steady state voltage. VREF 50Ω Output 5pF Test Comparator VREF ± 100mV (c)TDO VREF 50Ω 50Ω Output 20pF Test Comparator VREF Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 16 IS61DDSB22M18C IS61DDSB21M36C AC Timing Characteristics (Over the Operating Temperature Range, VDD=1.8V±5%, VDDQ=1.5V/1.8V) Parameter Symbol 25 (400MHz) 30 (333MHz) 33 (300MHz) 40 (250MHz) Min Max Min Max Min Max Min Max 2.50 8.4 3.00 8.4 3.33 8.4 4.00 8.4 unit notes Clock Clock Cycle Time (K, K#,C,C#) tKHKH Clock Phase Jitter (K, K#,C,C#) tKC var Clock High Time (K, K#,C,C#) tKHKL 0.4 0.4 0.4 0.4 cycle Clock Low Time (K, K#,C,C#) tKLKH 0.4 0.4 0.4 0.4 cycle Clock to Clock (KH→ K#H, CH→ C#H) tKHK#H 1.10 1.35 1.50 1.80 ns Clock to Data Clock (K > C, K# > C#) tKHCH 0 tKC lock 1024 DLL Lock Time (K,C) Doff Low period to DLL reset K static to DLL reset Output Times 0.3 1.10 0.3 0 1024 tDoffLowToReset 5 5 tKCreset 30 30 C,C# High to Output Valid tCHQV C,C# High to Output Hold tCHQX C,C# High to Echo Clock Valid tCHCQV C,C# High to Echo Clock Hold tCHCQX CQ, CQ# High to Output Valid tCQHQV CQ, CQ# High to Output Hold tCQHQX 1.35 0.45 -0.45 1.8 5 5 30 30 ns 0.45 0.45 -0.45 0.45 -0.45 0.25 0.45 -0.45 0.27 -0.27 0.30 -0.30 4 ns ns 0.45 -0.25 0 ns cycle -0.45 -0.45 0.20 1.48 0.3 1024 0.45 0.45 -0.20 0 1024 -0.45 -0.45 0.3 ns 5 ns 1,3 ns 1,3 ns 1 ns 1 ns 1,3 ns 1,3 ns 1,3 1,3 C,C# High to Output High-Z tCHQZ C,C# High to Output Low-Z tCHQX1 -0.45 -0.45 -0.45 -0.45 ns tAVKH 0.40 0.40 0.40 0.40 ns 2 tIVKH 0.40 0.40 0.40 0.40 ns 2 tIVKH2 0.28 0.30 0.30 0.30 ns 2 tDVKH 0.28 0.30 0.30 0.30 ns 2 tKHAX 0.40 0.40 0.40 0.40 ns 2 tKHIX 0.40 0.40 0.40 0.40 ns 2 tKHIX2 0.28 0.30 0.30 0.30 ns 2 tKHDX 0.28 0.30 0.30 0.30 ns 2 0.45 0.45 0.45 0.45 Setup Times Address valid to K rising edge R#,W# control inputs valid to K rising edge BWx# control inputs valid to K rising edge Data-in valid to K, K# rising edge Hold Times K rising edge to address hold K rising edge to R#,W# control inputs hold K rising edge to BWx# control inputs hold K, K# rising edge to data-in hold Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges. 2. During normal operation, VIH, VIL, TRISE, and TFALL of inputs must be within 20% of VIH, VIL, TRISE, and TFALL of clock. 3. If C, C are tied high, then K, K become the references for C, C timing parameters. 4. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 5. VDD slew rate must be less than 0.1V DC per 50ns for DLL lock retention. DLL lock time begins once V DD and input clock are stable. 6. The data sheet parameters reflect tester guard bands and test setup variations. 7. To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention because tCHQX1 is a MIN parameter that is worst case at totally different test conditions (0 C, 1.9V) than tCHQZ, which is a MAX parameter (worst case at 70 C, 1.7V) It is not possible for two SRAMs on the same board to be at such different voltage and temperature. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 17 IS61DDSB22M18C IS61DDSB21M36C Read, Write, and NOP Timing Diagram Read Read 1 2 t KHKH Read 3 Read 4 NOP 5 3 NOP 6 Write 7 Write 8 Read 9 10 11 t KHKL t KLKH K tKHK#H K# t AVKH Address (SA+SA0) A1 t IVKH t KHAX A2 A3 A4 A5 A6 A7 t KHIX LD# R/W# tKHCH C tKHK#H C# Q t CHQV t CHQX 1. 5 Cycle Read Latency t CHQZ t CHQV t CHQX Q1-0 Q1-1 Q2-0 Q2-1 Q3-0 Q3-1 Q4-0 Q4-1 Q7-0 Q7-1 tDVKH . tKHDX D5-0 D5-1 D6-0 D6-1 D t t CQ t CHQV tCQHQX tCQHQV X tCHCQV tCHCQX tCHCQX tCHCQV CQ# Undefined Notes: 1. Q1-0 refers to the output from address A1. Q1-1 refers to the output from the next burst address following A1. 2. Outputs are disabled (high impedance) one clock cycle after a NOP. 3. The second NOP cycle is not necessary for correct device operation, however, at high clock frequencies, it might be required to prevent bus contention. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 18 Don’t Care 12 IS61DDSB22M18C IS61DDSB21M36C IEEE 1149.1 Serial Boundary Scan of JTAG These SRAMs incorporate a serial boundary scan Test Access Port (TAP) controller in 165 FBGA package. That is fully compliant with IEEE Standard 1149.1-2001. The TAP controller operates using standard 1.8 V interface logic levels. Disabling the JTAG feature These SRAMs operate without using the JTAG feature. To disable the TAP controller, TCK must be tied Low (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull up resistor. TDO must be left unconnected. Upon power up, the device comes up in a reset state, which does not interfere with the operation of the device. Test Access Port Signal List: Test Clock (TCK) The test clock is to operate only TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is to set commands of the TAP controller and is sampled on the rising edge of TCK. This pin can be left unconnected at SRAM operation. The pin is pulled up internally to keep logic high level. Test Data-In (TDI) The TDI pin is to receive serially input information into the instruction and data registers. It can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register (Refer to the TAP Controller State Diagram). TDI is internally pulled up and can be unconnected at SRAM. TDI is connected to the most significant bit (MSB) on any register. Test Data-Out (TDO) The TDO pin is to drive serially clock data out from the JTAG registers. The output is active, depending upon the current state of the TAP state machine (Refer to instruction codes). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 19 IS61DDSB22M18C IS61DDSB21M36C TAP Controller State and Block Diagram ... Boundary Scan Register (109 bits) TDI Bypass Register (1 bit) Identification Register (32 bits) TDO Instruction Register (3 bits) Control Signals TMS TAP Controller TCK TAP Controller State Machine 1 Test Logic Reset 0 Run Test Idle 1 Select DR 1 Select IR 0 1 0 0 1 1 Capture DR 0 Capture IR 0 0 Shift DR 1 1 1 1 Exit1 DR Exit1 IR 0 0 0 Pause DR 0 Pause IR 1 1 Exit2 DR 0 Exit2 IR 1 0 1 Update DR 1 0 Shift IR Update IR 0 Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 1 0 20 IS61DDSB22M18C IS61DDSB21M36C Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This Reset does not affect the operation of the SRAM and can be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a High Z state. TAP Registers Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK and output on the TDO pin on the falling edge of TCK. Instruction Register This register is loaded during the update-IR state of the TAP controller. Three-bit instructions can be serially loaded into the instruction register. At power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the capture-IR state, the two LSBs are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register The bypass register is a single-bit register that can be placed between the TDI and TDO balls. It is to skip certain chips without serial boundary scan. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and output balls on the SRAM. Several No Connected(NC) balls are also included in the scan register to reserve other product options. The boundary scan register is loaded with the contents of the SRAM input and output ring when the TAP controller is in the capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the input and output ring. Each bit corresponds to one of the balls on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the shift-DR state. The ID register has a vendor ID code and other information TAP Instruction Set TAP Instruction Set is available to set eight instructions with the three bit instruction register and all combinations are listed in the TAP Instruction Code Table. Three of listed instructions on this table are reserved and must not be used. Instructions are loaded serially into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. To execute an instruction once it is shifted in, the TAP controller must be moved into the Update-IR state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the shift-DR state. The IDCODE instruction is loaded into the instruction register upon powerup or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High Z state until the next command is supplied during the Update IR state. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 21 IS61DDSB22M18C IS61DDSB21M36C SAMPLE/PRELOAD SAMPLE/PRELOAD is a IEEE 1149.1 basic instruction which connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state.. A snapshot of data on the inputs and output balls is captured in the boundary scan register when the TAP controller is in a Shift-DR state. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates significantly faster. Because there is a large difference between the clock frequencies, it is possible that during the capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition. This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To ensure that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time. The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/ PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK# captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the shiftDR state. This places the boundary scan register between the TDI and TDO balls. PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a shift-DR state, the bypass register is placed between TDI and TDO. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. PRIVATE Do not use these instructions. They are reserved for future use and engineering mode. EXTEST The EXTEST instruction drives the preloaded data out through the system output pins. This instruction also connects the boundary scan register for serial access between the TDI and TDO in the Shift-DR controller state. IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tri-state mode. The boundary scan register has a special bit located at bit #109. When this scan cell, called the “EXTEST output bus tri-state,” is latched into the preload register during the Update-DR state in the TAP controller, it directly controls the state of the output (Qbus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a High Z condition. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is pre-set LOW to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state. JTAG DC Operating Characteristics (Over the Operating Temperature Range, VDD=1.8V±5%) Parameter JTAG Input High Voltage JTAG Input Low Voltage JTAG Output High Voltage JTAG Output Low Voltage JTAG Output High Voltage JTAG Output Low Voltage JTAG Input Leakage Current JTAG Output Leakage Current Symbol VIH1 VIL1 VOH1 VOL1 VOH2 VOL2 ILIJTAG ILOJTAG Min 1.3 –0.3 1.4 1.6 -100 -5 Max VDD+0.3 0.5 0.4 0.2 +100 +5 Units V V V V V V uA uA Notes |IOH1|=2mA IOL1=2mA |IOH2|=100uA IOL2=100uA 0 ≤ Vin ≤ VDD 0 ≤ Vout ≤ VDD Notes: 1. All voltages referenced to VSS (GND); All JTAG inputs and outputs are LVTTL-compatible. Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 22 IS61DDSB22M18C IS61DDSB21M36C JTAG AC Test Conditions (Over the Operating Temperature Range, VDD=1.8V±5%, VDDQ=1.5V/1.8V) Parameter Input Pulse High Level Input Pulse Low Level Input Rise Time Input Fall Time Input and Output Timing Reference Level Symbol VIH1 VIL1 TR1 TF1 Conditions 1.3 0.5 1.0 1.0 0.9 Units V V ns ns V JTAG AC Characteristics (Over the Operating Temperature Range, VDD=1.8V±5%, VDDQ=1.5V/1.8V) Parameter TCK cycle time TCK high pulse width TCK low pulse width TMS Setup TMS Hold TDI Setup TDI Hold Capture Setup Capture Hold TCK Low to Valid Data* TCK Low to Invalid Data* Symbol tTHTH tTHTL tTLTH tMVTH tTHMX tDVTH tTHDX tCVTH tTHCX tTLOV tTLQX Min 50 20 20 5 5 5 5 5 5 – 0 Max – – – – – – – – – 10 – Units ns ns ns ns ns ns ns ns ns ns ns Note: See AC Test Loading(c) JTAG Timing Diagram tTHTL tTHTH tTLTH TCK tMVTH tTHMX tDVTH tTHDX TMS TDI tTLOX tTLOV TDO Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 23 IS61DDSB22M18C IS61DDSB21M36C Instruction Set Code Instruction TDO Output 000 EXTEST Boundary Scan Register 001 IDCODE 32-bit Identification Register 010 SAMPLE-Z Boundary Scan Register 011 PRIVATE Do Not Use 100 SAMPLE(/PRELOAD) Boundary Scan Register 101 PRIVATE Do Not Use 110 PRIVATE Do Not Use 111 BYPASS Bypass Register ID Register Definition Revision Number (31:29) Part Configuration (28:12) Vendor ID Code (11:1) Start Bit (0) 000 0TDEF0WX01PQLBTS0 0000 1010101 1 Part Configuration Definition: 1. 2. 3. 4. 5. 6. 7. 8. DEF = 001 for 18Mb, 010 for 36Mb, 011 for 72Mb WX = 11 for x36, 10 for x18 P = 1 for II+(QUAD-P/DDR-IIP), 0 for II(QUAD/DDR-II) Q = 1 for QUAD, 0 for DDR-II L = 1 for RL=2.5, 0 for RL≠2.5 B = 1 for burst of 4, 0 for burst of 2 S = 1 for Separate I/O, 0 for Common I/O T = 1 for ODT option, 0 for No ODT option Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 24 IS61DDSB22M18C IS61DDSB21M36C Boundary Scan Exit Order ORDER 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Pin ID 6R 6P 6N 7P 7N 7R 8R 8P 9R 11P 10P 10N 9P 10M 11N 9M 9N 11L 11M 9L 10L 11K 10K 9J 9K 10J 11J 11H 10G 9G 11F 11G 9F 10F 11E 10E ORDER 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Pin ID 10D 9E 10C 11D 9C 9D 11B 11C 9B 10B 11A 10A 9A 8B 7C 6C 8A 7A 7B 6B 6A 5B 5A 4A 5C 4B 3A 2A 1A 2B 3B 1C 1B 3D 3C 1D ORDER 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 Pin ID 2C 3E 2D 2E 1E 2F 3F 1G 1F 3G 2G 1H 1J 2J 3K 3J 2K 1K 2L 3L 1M 1L 3N 3M 1N 2M 3P 2N 2P 1P 3R 4R 4P 5P 5N 5R Internal Notes: 1. NC pins as defined on the FBGA Ball Assignments are read as ”don’t cares”. 2. State of internal pin (#109) is loaded via JTAG Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 25 IS61DDSB22M18C IS61DDSB21M36C Ordering Information Commercial Range: 0 °C to + 70 °C Speed 400MHz 333MHz 300MHz 250MHz Order Part No. IS61DDSB21M36C-400M3 IS61DDSB21M36C-400M3L IS61DDSB22M18C-400M3 IS61DDSB22M18C-400M3L IS61DDSB21M36C-333M3 IS61DDSB21M36C-333M3L IS61DDSB22M18C-333M3 IS61DDSB22M18C-333M3L IS61DDSB21M36C-300M3 IS61DDSB21M36C-300M3L IS61DDSB22M18C-300M3 IS61DDSB22M18C-300M3L IS61DDSB21M36C-250M3 IS61DDSB21M36C-250M3L IS61DDSB22M18C-250M3 IS61DDSB22M18C-250M3L Organization 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 Package 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free Commercial Range: 0 °C to + 70 °C Speed 400MHz 333MHz 300MHz 250MHz Order Part No. IS61DDSB21M36C-400B4 IS61DDSB21M36C-400B4L IS61DDSB22M18C-400B4 IS61DDSB22M18C-400B4L IS61DDSB21M36C-333B4 IS61DDSB21M36C-333B4L IS61DDSB22M18C-333B4 IS61DDSB22M18C-333B4L IS61DDSB21M36C-300B4 IS61DDSB21M36C-300B4L IS61DDSB22M18C-300B4 IS61DDSB22M18C-300B4L IS61DDSB21M36C-250B4 IS61DDSB21M36C-250B4L IS61DDSB22M18C-250B4 IS61DDSB22M18C-250B4L Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 Organization 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 Package 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 26 IS61DDSB22M18C IS61DDSB21M36C Industrial Range: -40 °C to + 85 °C Speed 400MHz 333MHz 300MHz 250MHz Order Part No. Organization IS61DDSB21M36C-400M3I IS61DDSB21M36C-400M3LI IS61DDSB22M18C-400M3I IS61DDSB22M18C-400M3LI IS61DDSB21M36C-333M3I IS61DDSB21M36C-333M3LI IS61DDSB22M18C-333M3I IS61DDSB22M18C-333M3LI IS61DDSB21M36C-300M3I IS61DDSB21M36C-300M3LI IS61DDSB22M18C-300M3I IS61DDSB22M18C-300M3LI IS61DDSB21M36C-250M3I IS61DDSB21M36C-250M3LI IS61DDSB22M18C-250M3I IS61DDSB22M18C-250M3LI 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 Package 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free 165 FBGA (15x17 mm) 165 FBGA (15x17 mm), lead free Industrial Range: -40 °C to + 85 °C Speed 400MHz 333MHz 300MHz 250MHz Order Part No. IS61DDSB21M36C-400B4I IS61DDSB21M36C-400B4LI IS61DDSB22M18C-400B4I IS61DDSB22M18C-400B4LI IS61DDSB21M36C-333B4I IS61DDSB21M36C-333B4LI IS61DDSB22M18C-333B4I IS61DDSB22M18C-333B4LI IS61DDSB21M36C-300B4I IS61DDSB21M36C-300B4LI IS61DDSB22M18C-300B4I IS61DDSB22M18C-300B4LI IS61DDSB21M36C-250B4I IS61DDSB21M36C-250B4LI IS61DDSB22M18C-250B4I IS61DDSB22M18C-250B4LI Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 Organization 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 1Mx36 1Mx36 2Mx18 2Mx18 Package 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 165 FBGA (13x15 mm) 165 FBGA (13x15 mm), lead free 27 IS61DDSB22M18C IS61DDSB21M36C Package drawing – 15x17x1.4 BGA Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 28 IS61DDSB22M18C IS61DDSB21M36C Package drawing – 13X15X1.4 BGA Integrated Silicon Solution, Inc.- www.issi.com Rev. 00A 11/26/2014 29