MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com MAX™ 40 Cell Series HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR (TVS) DIODE STAND-OFF VOLTAGE 12 to 150 Volts 40000 Watt Peak Pulse Power FEATURES • Glass passivated junction • Bidirectional • 40000W Peak Pulse Power capability on 10x1000 μs waveform • Excellent clamping capability • Repetition rate (duty cycle):0.05% • Sharp breakdown voltage • Low incremental surge resistance • Fast response time: typically less than 1.0 ps from 0 volts to BV • Typical IR less than 20μA above 10V • Operation Tempature: -55°C to +150°C See Demensions on Page 4 MECHANICAL DATA Terminals: Ag Plated Axial leads, solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 1.490 ± 0.149g (0.053 ± 0.005 ounces) DEVICES FOR BIPOLAR APPLICATIONS Bidirectional use CA Suffix. Electrical characteristics apply in both directions. Unidirectional A Suffix available as a special order MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. RATING Peak Pulse Power Dissipation on 10/1000 μs waveform Peak Pulse Current of on 10-1000 μs waveform SYMBOL VALUE UNITS Pppm Minimum 20000 Watts Ippm SEE CURVE Amps 5/21/2009 MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. Tel: 760-564-8656 • Fax 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com MAX- 40™ Cell Series Numbers PART NUMBER of Cell MAX40-12CA MAX40-13CA MAX40-14CA MAX40-15CA MAX40-16CA MAX40-17CA MAX40-18CA MAX40-20CA MAX40-22CA MAX40-24CA MAX40-26CA MAX40-28CA MAX40-30CA MAX40-33CA MAX40-36CA MAX40-40CA MAX40-43CA MAX40-45CA MAX40-48CA MAX40-51CA MAX40-54CA MAX40-58CA MAX40-60CA MAX40-64CA MAX40-70CA MAX40-75CA MAX40-78CA MAX40-85CA MAX40-90CA MAX40-100CA MAX40-110CA MAX40-120CA MAX40-130CA MAX40-150CA 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 3 3 3 3 3 4 4 4 4 4 4 6 6 6 6 6 6 8 REVERSE STANDOFF VOLTAGE VRWM(V) 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 BREAKDOWN TEST PEAK VOLTAGE CURRENT PULSE VBR(V) IT CURRENT MIN. @IT Ipp (A) (mA) 14.0 15.2 16.4 17.6 18.8 19.9 21.1 23.4 25.7 28.1 30.4 32.8 35.1 38.7 42.1 46.8 50.3 52.7 56.1 59.7 63.2 67.8 70.2 74.9 81.9 87.7 91.3 99.2 105.5 117.0 128.5 140.0 151.5 176.0 50 50 50 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2010.1 1860.5 1724.1 1639.3 1538.5 1449.3 1369.6 1234.6 1126.8 1028.3 950.1 881.1 826.4 750.5 688.5 620.2 576.4 550.2 516.8 485.4 459.2 427.4 413.2 388.3 354.0 330.6 317.5 292.0 274.0 246.9 226.0 207.3 191.4 164.6 REVERSE LEAKAGE @ VRWM IR(μA) MAXIMUM CLAMPING VOLTAGE @IPP VC (V) 2000 2000 2000 500 200 50 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103.0 113.0 121.0 126.0 137.0 145 162 177 193 209 243 To Order use Part Number Plus - Cell Example: MAX 40-XXX-CA-Cell 5/21/2009 KW MAX-40 Rating Charactistic Curves PEAK PULSE1 10000 Non-repetitive pulse waveform shown in Fig. 3T A = 25ºC 1000 100 1 0.1 1 10 100 1,000 10,000 100,000 td PULSE WIDTH 1 µsec FIG. 1 PEAK PULSE POWER RATING Fig.2 - Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage,% 100 87.5 75 62.5 50 37.5 25 12.5 0 0 25 50 75 100 125 150 175 200 TA - Ambient Temperature (°C) 150 IPPM - Peak Pulse Current,% IRSM Pppm 1 10 TJ = 25°C Pulse Width(td)is defined as the point where the peak current decays to 50% of IPPM tr = 10μsec. Peak Value IPPM 100 Half Value- I PPM 2 10/1000μsec.Waveform as defined by R.E.A. 50 td 0 0 1.0 2.0 3.0 3.0 4.0 4.0 t - Time(ms) Fig.3 - Pulse Waveform 5/21/2009 MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA, U.S.A. Tel: 760-564-8656 • Fax 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com MAX™ 40 Cell Series Cell Outline Dimensions Stack 3 chip Stack 2 chip UNIT: Inch (mm) .373 ±0.006 (9.4±0.1mm) .373 ±0.006 (9.4±0.1mm) .078 ±0.006 (1.9±0.1mm .108 ±0.006 (2.68±0.1m) Stack 6 chip .373 ±0.006 (9.4±0.1mm) Stack 4 chip .373 ±0.006 (9.4±0.1mm) .198 ±0.006 (4.97±0.1mm) .137 ±0.006 (3.44±0.1mm) Stack 8 chip .373 ±0.006 (9.4±0.1mm) .257 ±0.006 (6.5±0.1mm) 5/21/2009