LED Chip Infrared

LED Chip Infrared
Product No:
Radiation
Infrared
Type
AlGaAs
OPC8900-28
Electrodes
N (cathode) up
Typ280
Unit: um
Typ150
Φ140
N Electrode
Emission Area
P Electrode
Physical Characteristics & Structure
Material: AlGaAs
Bond Pad Size: 140um diameter
Junction Size: 280um x 280um
Anode Metalization: Gold Alloy
Thickness: 150um
Cathode Metalization: Gold Alloy
Electrical & Optical Characteristics (Ta = 25ºC)
ITEMS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Forward Voltage
Reverse Voltage
Radiant Power*
Peak Wavelength
Spectral Bandwidth at 50%
Vf
Vr
Φe
λp
∆λ0.5
If=20mA
Ir=10uA
If=20mA
If=20mA
If=20mA
-5
0.4
---
---890
75
1.6
-----
V
V
mW
nm
nm
* LED chip is mounted on TO-18 gold header without resin coating.
Absolute Maximum Ratings (Ta = 25ºC)
Continuous Maximum Forward Current: 50mA (DC)
Reverse Voltage: 5V (IR=10uA)
Storage Temperature
while on mylar membrane: 0 to 40 ºC
after removal from mylar membrane: -30 to 100 ºC
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All
operating parameters must be validated for each customer application by the customer.
Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA
TOLL FREE:
1-800-984-5337 •
PHONE:
518-956-2980 •
FAX:
www.marktechopto.com
518-785-4725 •
EMAIL:
[email protected]
2014-04-24
1