2SA1052 Silicon PNP Epitaxial REJ03G0634-0300 (Previous ADE-208-1006A) Rev.3.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings (Ta = 25°C) Symbol Ratings Unit Collector to base voltage Collector to emitter voltage Item VCBO VCEO –30 –30 V V Emitter to base voltage Collector current VEBO IC –5 –100 V mA Emitter current IE 100 mA Collector power dissipation Junction temperature PC Tj 150 150 mW °C Tstg –55 to +150 °C Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 5 2SA1052 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SA1052 is grouped by hFE as follows. Grade C D Mark MC MD hFE 160 to 320 250 to 500 Rev.3.00 Aug 10, 2005 page 2 of 5 Min –30 –30 –5 — — 160 — — Typ — — — — — — — — Max — — — –0.5 –0.5 500 –0.2 –0.75 Unit V V V µA µA V V Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –20 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA 2SA1052 Main Characteristics Typical Output Characteristics (1) 300 –5 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 200 100 –25 –4 –20 –3 –15 –2 –10 –1 –5 µA IB = 0 0 100 50 150 0 Ambient Temperature Ta (°C) –0.2 –0.4 –0.6 –0.8 –1.0 Collector Emitter Voltage VCE (V) Typical Output Characteristics (2) Typical Transfer Characteristics –5 –5 –15 –3 –2 –10 –1 –5 µA VCE = –12 V –4 –3 –2 25 –20 –4 Ta = 75°C Collector Current IC (mA) Collector Current IC (mA) –25 –1 IB = 0 0 –5 –10 –15 –20 –25 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) DC Current Transfer Ratio hFE –0.2 Collector Emitter Voltage VCE (V) 500 400 0 VCE = –12 V 300 200 100 0 –0.01 –0.1 –1.0 –10 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 5 –100 500 400 VCE = –12 V 300 200 100 0 –0.5 –1.0 –2 –5 –10 Collector Current IC (mA) –20 Collector to Emitter Saturation Voltage VCE(sat) (V) 2SA1052 Rev.3.00 Aug 10, 2005 page 4 of 5 Collector to Emitter Saturation Voltage vs. Collector Current –0.28 IC = 10 IB –0.24 –0.20 –0.16 –0.12 5°C –0.08 Ta =7 –0.04 25 0 –1 –2 –5 –10 –20 –50 –100 Collector Current IC (mA) 2SA1052 Package Dimensions JEITA Package Code RENESAS Code SC-59A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SA1052MCTR-E 2SA1052MDTR-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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