General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
LMBT2516QLT1G
Series
FEATURE
3
ƽHigh current capacity in compact package.
ƽEpitaxial planar type.
1
ƽNPN complement: LMBT2506QLT1G
2
ƽWe declare that the material of product compliance with RoHS requirements.
SOT–23
DEVICE MARKING AND ORDERING INFORMATION
Device
COLLECTOR
3
Shipping
Marking
LMBT2516PLT1G
1GB
3000/Tape&Reel
LMBT2516PLT3G
1GB
10000/Tape&Reel
LMBT2516QLT1G
1GD
3000/Tape&Reel
LMBT2516QLT3G
1GD
10000/Tape&Reel
LMBT2516RLT1G
1GF
3000/Tape&Reel
LMBT2516RLT3G
1GF
10000/Tape&Reel
LMBT2516SLT1G
1GH
3000/Tape&Reel
LMBT2516SLT3G
1GH
10000/Tape&Reel
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
Max
Unit
VCEO
VCBO
VEBO
IC
-25
-40
V
V
-5
-500
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Max
Unit
TA=25°C
225
mW
Derate above 25°C
1.8
mW/°C
556
°C/W
Alumina Substrate,(2) TA=25°C
300
mW
Derate above 25°C
2.4
mW/°C
R θJ A
417
°C/W
T j,T St g
-55 to +150
°C
Total Device Dissipation FR-5 Board,(1)
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJ A
PD
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LMBT2516QLT1G
Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
-25
–
–
V
V(BR)EBO
-5
–
–
V
V(BR)CBO
-40
–
–
V
Collector Cutoff Current (VCB=-30V)
ICBO
–
–
-100
nA
Emitter Cutoff Current (VEB=-4V)
IEBO
–
–
-100
nA
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100 µΑ)
Collector-Base Breakdown Voltage
(IC=-100 µΑ)
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
IC=-100mA,VCE =-1V
H FE
100
-
600
VCE(S)
-
-
-0.5
V
VBE(S)
-
-
-1.2
V
Collector-Emitter Saturation Voltage
(IC=-500mA,I B =-50mA)
Base Emitter Saturation Voltage
(IC=-500mA,I B =-50mA)
NOTE :
*
P
Q
hF E
100~200
150~300
R
200~400
S
300~600
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LMBT2516QLT1G
Series
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3