LBAT54XV2T1G

LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for
hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
• Device Marking: JV
LBAT54XV2T1G
S- LBAT54XV2T1G
1
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
2
SOD-523
ORDERING INFORMATION
Device
LBAT54XV2T1G
S-LBAT54XV2T1G
LBAT54XV2T3G
S-LBAT54XV2T3G
Marking
Shipping
JV
3000/Tape & Reel
JV
10000/Tape & Reel
1
CATHODE
2
ANODE
MAXIMUM RATINGS (TJ =125°C unless otherwise noted )
Rating
Reverse Voltage
Symbol
VR
Value
30
Unit
V
Symbol
PD
Max
200
Unit
mW
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
1.57
635
125
-40 to +125
RθJA
TJ
Tstg
mW/°C
°C/W
°C
°C
* FR-4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I R = 10 µA)
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
Reverse Leakage (V R = 25 V)
Forward Voltage (I F = 0.1 mAdc)
Forward Voltage (I F = 1.0 mAdc)
Forward Voltage (I F = 10 mAdc)
Forward Voltage (I F = 30 mAdc)
Forward Voltage (I F = 100 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V(BR)R
CT
IR
VF
VF
VF
Min
30
—
—
—
—
—
Typ
—
—
0.5
0.22
0.29
0.35
Max
—
10
2.0
0.24
0.32
0.40
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
VF
VF
—
—
0.41
0.52
0.5
1.0
Vdc
Vdc
trr
—
—
5.0
ns
IF
—
—
—
—
—
—
200
300
600
mAdc
mAdc
mAdc
IFRM
IFSM
Rev.B 1/3
LESHAN RADIO COMPANY, LTD.
LBAT54XV2T1G , S- LBAT54XV2T1G
820 Ω
+10 V
2k
0.1 µF
tp
tr
IF
100 µH
0.1 µF
IF
t
trr
10%
t
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Fig.1 RECOVERY TIME EQUIVALENT TEST CIRCUIT
100
REVERSE CURRENT :IR(uA)
FORWARD CURRENT:IF(mA)
100
10
1
10
1
0.1
0.01
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
FORWARD VOLTAGE:VF(V)
-55℃
25℃
75℃
10
15
20
25
30
35
REVERSE VOLTAGE:VR(V)
100℃
125℃
Fig.2 FORWARD CHARACTERISTICS
-55℃
25℃
75℃
100℃
125℃
Fig.3 REVERSE CHARACTERISTICS
12
TERMINAL CAPACITANCE : CT (pF)
f=1MHz
10
8
6
4
2
0
0
5
10
15
20
25
30
35
REVERSE VOLTAGE:VR(V)
Fig.4 VR-CT CHARACTERISTICS
Rev.B 2/3
LESHAN RADIO COMPANY, LTD.
LBAT54XV2T1G , S- LBAT54XV2T1G
SOD-523
−X−
D
−Y−
E
2X
b
0.08
1
M
2
X Y
TOP VIEW
A
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
DIM
A
b
c
D
E
HE
L
L2
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
HE
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.48
PACKAGE
OUTLINE
1.80
2X
0.40
DIMENSION: MILLIMETERS
Rev.B 3/3