Bias Resistor Transistor LDTA144VET1G

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
LDTA144VET1G
Applications
Inverter, Interface, Driver
•
3
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
1
2
SC-89
We declare that the material of product compliance with
RoHS requirements.
1
BASE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
VCC
VI
IO
IC(Max.)
−50
−40 to +15
V
V
−30
−100
mA
Pd
200
mW
Tj
Tstg
150
−55 to +150
°C
°C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
R1
3
COLLECTOR
R2
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
LDTA144VET1G
L9
47
10
3000/Tape & Reel
LDTA144VET3G
L9
47
10
8000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
Min.
Typ.
Max.
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
−
−6
−
−
−
33
32.9
0.17
−
−
−
−0.1
−
−
−
47
0.21
250
−1
−
−0.3
−0.16
−0.5
−
61.1
0.26
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC= −5V , IO= −100µA
VO= −0.3V , IO= −2mA
IO= −10mA , II= −0.5mA
VI= −5V
VCC= −50V , VI=0V
IO= −5mA , VO= −5V
−
−
VCE= −10V , IE=5mA , f=100MHz ∗
∗ Transition frequency of the device.
1/3
LESHAN RADIO COMPANY, LTD.
LDTA144VET1G
zElectrical characteristic curves
−100
−5m
OUTPUT CURRENT : IO (A)
−50
INPUT VOLTAGE : VI(on) (V)
−10m
Ta=25°C
VO= −0.3V
−20
−10
−5
−2
−1
−500m
−2m
−1m
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−200m
−2µ
−100m
−100µ −200µ −500µ −1m −2m
−1µ
−1.5
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Ta=25°C
VO= −5V
500
200
100
50
20
10
5
−2.5
−3
−3.5
−4.0
−4.5
Fig.2 Output current vs. Input voltage
(OFF characteristics)
−1
OUTPUT VOLTAGE : VO(on) (V)
1000
−2
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. Output current
(ON characteristics)
DC CURRENT GAIN : GI
Ta=25°C
VCC= −5V
Ta=25°C
IO/II=20
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
2
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. Output current
characteristics
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. Output current
characteristics
2/3
LESHAN RADIO COMPANY, LTD.
LDTA144VET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3