Date:- 05 July, 2013 Data Sheet Issue:- A1 Provisional Data Rectifier Diode Types W4767MC180 & W4767MC220 Development Type No.: WX250MC#220 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, (note 1) 1800-2200 V VRSM Non-repetitive peak reverse voltage, (note 1) 1900-2300 V MAXIMUM LIMITS UNITS OTHER RATINGS IF(AV)M Maximum average forward current, Tsink=55°C, (note 2) 4755 A IF(AV)M Maximum average forward current. Tsink=100°C, (note 2) 3475 A IF(AV)M Maximum average forward current. Tsink=100°C, (note 3) 2015 A IF(RMS)M Nominal RMS forward current, Tsink=25°C, (note 2) 8615 A IF(d.c.) D.C. forward current, Tsink=25°C, (note 4) 7425 A IFSM Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5) 38.0 kA IFSM2 Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5) 41.8 2 2 kA 6 A2s It I t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5) 7.22 x 10 I2 t 2 I t capacity for fusing tp=10ms, Vrm≤10V, (note 5) 8.74 x 106 A2s Tj op Operating temperature range -40 to +175 °C Tstg Storage temperature range -55 to +175 °C Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 175°C Tj initial. Data Sheet. Types W4767MC180 & W4767MC220 Issue A1 Page 1 of 9 July, 2013 Rectifier Diode Types W4767MC180 & W4767MC220 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS - - 1.05 ITM=3000A V - - 1.50 ITM= 8000A V VFM Maximum peak forward voltage VT0 Threshold voltage - - 0.827 V rT Slope resistance - - 0.083 mΩ IRRM Peak reverse current - - 5 Rated VRRM, Tj=25°C mA - - 50 Rated VRRM, Tj= Tjmax mA Qrr Recovered charge - 3800 4100 Qra Recovered charge, 50% Chord - 2250 - Irr Reverse recovery current - 172 - trr Reverse recovery time, 50% Chord - 26 - - - 0.0140 Double side cooled K/W - - 0.0265 Anode side cooled K/W - - 0.0300 Cathode side cooled K/W 25 - 31 - 530 - RthJK F Thermal resistance, junction to heatsink Mounting force µC µC ITM=1000A, tp=1000µs, di/dt=10A/µs, Vr=100V A µs Note 2 kN Notes:1) Unless otherwise indicated Tj=175°C. 2) For other clamp forces, please consult factory. Data Sheet. Types W4767MC180 & W4767MC220 Issue A1 Page 2 of 9 July, 2013 Rectifier Diode Types W4767MC180 & W4767MC220 Notes on Ratings and Characteristics 1.0 Voltage Grade Table VRRM V 1800 2200 Voltage Grade 18 22 VRSM V 1900 2300 VR DC V 1125 1350 2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 4.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 5.0 Computer Modelling Parameters 5.1 Device Dissipation Calculations WAV = − VT 0 + VT 0 + 4 ⋅ ff 2 ⋅ rT ⋅ WAV = 2 ⋅ ff 2 ⋅ rT 2 I AV and: ∆T Rth ∆T = T j max − TK Where VT0=0.827V, rT=0.830mΩ, Rth = Supplementary thermal impedance, see table below and ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle 6 phase (60°) 3 phase (120°) ½ wave (180°) d.c. Square wave Double Side Cooled 0.01665 0.01581 0.01516 0.0140 Square wave Single Side Cooled 0.03217 0.03147 0.03090 0.0297 Sine wave Double Side Cooled 0.01612 0.01531 0.01436 Sine wave Single Side Cooled 0.03174 0.03105 0.03022 Form Factors Conduction Angle 6 phase (60°) 3 phase (120°) ½ wave (180°) d.c. Square wave 2.449 1.732 1.414 1 Sine wave 2.778 1.879 1.57 Data Sheet. Types W4767MC180 & W4767MC220 Issue A1 Page 3 of 9 July, 2013 Rectifier Diode Types W4767MC180 & W4767MC220 5.2 Calculating VF using ABCD Coefficients The on-state characteristic IF vs. VF, on page 6 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VF in terms of IF given below: VF = A + B ⋅ ln (I F ) + C ⋅ I F + D ⋅ I F The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for VF agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients A 175°C Coefficients 0.7125574 A 0.3416283 B 2.1505470 x 10 -2 B 4.7594410 x 10-2 C 4.2526320 x 10-5 C 6.3862610 x 10-5 D 3.1809190 x 10-3 D 2.4763940 x 10-3 Data Sheet. Types W4767MC180 & W4767MC220 Issue A1 Page 4 of 9 July, 2013 Rectifier Diode Types W4767MC180 & W4767MC220 5.3 D.C. Thermal Impedance Calculation −t ⎛ τ rt = ∑ rp ⋅ ⎜1 − e p ⎜ p =1 ⎝ ⎞ ⎟ ⎟ ⎠ p=n Where p = 1 to n, n is the number of terms in the series and: t = Duration of heating pulse in seconds. rt = Thermal resistance at time t. rp = Amplitude of pth term. τp = Time Constant of rth term. The coefficients for this device are shown in the tables below: D.C. Double Side Cooled Term 1 2 rp 8.594785×10 τp 0.7185764 Term -3 3 3.308247×10 -3 1.039072×10 0.09970181 4 -3 7.916582×10-4 5.266433×10-3 0.02165834 1 2 3 rp 0.02196926 5.845724×10 τp 4.127141 0.1629998 -3 1.904897×10-3 8.832583×10-3 6.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 Fig. 1 150 µs (ii) Qrr is based on a 150µs integration time i.e. Qrr = ∫i rr .dt 0 (iii) K Factor = t1 t2 Data Sheet. Types W4767MC180 & W4767MC220 Issue A1 Page 5 of 9 July, 2013 Rectifier Diode Types W4767MC180 & W4767MC220 Curves Figure 1 – Forward characteristics of Limit device 10000 Figure 2 – Transient thermal impedance 0.1 W4767MC180-220 Issue A1 175°C W4767MC180-220 Issue A1 KSC 25°C ASC Thermal impedance (K/W) Instantaneous forward current - IFM (A) 0.01 1000 DSC 0.001 0.0001 0.00001 100 0.00 0.50 1.00 1.50 0.000001 1E-05 0.0001 0.001 2.00 0.01 Maximum instantaneous forw ard voltage - V FM (V) 0.1 1 10 100 Time (s) Figure 3 – Maximum surge Rating 1.00E+08 I2t: VR≤10V I2t: VR=60% VRRM 2 2 IFSM: VR≤10V Maximum I t (A s) Total peak half sine surge current - IFSM (A) 100000 10000 IFSM: VR=60% VRRM W4767MC180-220 Issue A1 1000 1 3 5 10 Duration of surge (ms) Data Sheet. Types W4767MC180 & W4767MC220 Issue A1 1.00E+07 Tj (initial) = 175°C 1 5 10 50 100 1.00E+06 Duration of surge (cycles @ 50Hz) Page 6 of 9 July, 2013 Rectifier Diode Types W4767MC180 & W4767MC220 Figure 4 – Total recovered charge, Qrr Figure 5 – Recovered charge, Qra (50% chord) 10000 W4767MC180-220 Issue A1 10000 4000A 3000A 2000A 1000A T j = 175°C W 4767MC180-220 Issue A1 4000A 3000A T j = 175°C 2000A Total recovered charge - Qrr (µC) Recovered charge - Qra, 50% chord (µC) 1000A 1000 1000 1 10 100 1000 1 10 Commutation rate - di/dt (A/µs) 1000 Figure 7 – Maximum recovery time, trr (50% chord) Figure 6 – Peak reverse recovery current, Irm 10000 100 W 4767M C180-220 Issue A1 W4767MC180-220 Issue A1 T j = 175°C T j = 175°C 4000A 3000A 2000A 1000A Reverse recovery time - trr, 50% chord (µs) Reverse recovery current - Irm (A) 100 Commutation rate - di/dt (A/µs) 1000 100 10 4000A 3000A 2000A 1000A 10 1 1 10 100 1000 1 Commutation rate - di/dt (A/µs) Data Sheet. Types W4767MC180 & W4767MC220 Issue A1 10 100 1000 Commutation rate - di/dt (A/µs) Page 7 of 9 July, 2013 Rectifier Diode Types W4767MC180 & W4767MC220 Figure 8 – Forward current vs. Power dissipation – Double Side Cooled Figure 9 – Forward current vs. Heatsink temperature – Double Side Cooled 175 12000 W 4767M C180-220 Issue A1 W 4767M C180-220 Issue A1 d.c. 150 ½ wave 10000 3ø Maximum permissable heatsink temperature (°C) Maximum Forward Dissipation (W) 6ø 8000 6000 4000 125 100 75 50 2000 25 6ø d.c. ½ wave 3ø 0 0 0 100 200 300 400 0 Mean Forw ard Current (A) (W hole cycle averaged) 100 200 300 400 M ean Forw ard Current (A) (W hole cycle averaged) Figure 10 – Forward current vs. Power dissipation – Single Side Cooled Figure 11 – Forward current vs. Heatsink temperature – Single Side Cooled 6000 175 W 4767M C180-220 Issue A1 W 4767M C180-220 Issue A1 d.c. 5000 150 Maximum permissible heatsink temperature (°C) Maximum Forward Dissipation (W) 6ø ½ wave 3ø 4000 3000 2000 125 100 75 50 1000 25 6ø 0 ½ wave 3ø d.c. 0 0 50 100 150 200 250 300 0 M ean Forw ard Current (A) (W hole cycle averaged) Data Sheet. Types W4767MC180 & W4767MC220 Issue A1 50 100 150 200 250 300 Mean forw ard current (A) (W hole cycle averaged) Page 8 of 9 July, 2013 Rectifier Diode Types W4767MC180 & W4767MC220 Outline Drawing & Ordering Information 100A353 ORDERING INFORMATION MC ♦♦ 0 Fixed Outline Code Voltage code VRRM/100 18 & 22 Fixed Code W4767 Fixed Type Code (Please quote 10 digit code as below) Order code: W4767MC180 -1800V VRRM, 26.3mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: [email protected] IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: WSL.sales@westcode,com www.ixysuk.com www.ixys.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS Long Beach, Inc 2500 Mira Mar Avenue Long Beach CA 90815 USA Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types W4767MC180 & W4767MC220 Issue A1 Page 9 of 9 July, 2013