Micro-spectrometer C12666MA Finger-tip size, ultra-compact spectrometer head integrating MEMS and image sensor technologies The C12666MA is an ultra-compact (Finger-tip size) spectrometer head developed based on our MEMS and image sensor technologies. The adoption of a newly designed optical system has achieved a remarkably small size, less than half the volume of the previous mini-spectrometer MS series (C10988MA-01). In addition, the employment of hermetic packaging has improved humidity resistance. This product is suitable for integration into a variety of devices, such as integration into printers and hand-held color monitoring devices that require color management. It is also suitable for applications that collaborate with portable devices, such as smartphones and tablets. Features Applications Finger-tip size: 20.1 × 12.5 × 10.1 mm Color monitoring for printers and printing machines Weight: 5 g Testers for lights and LEDs Spectral response range: 340 to 780 nm Color adjustment of various large size displays Spectral resolution: 15 nm max. Water quality control monitors and other environment measuring instruments Hermetic package: High reliability against humidity Installation into mobile measurement equipment Wavelength conversion factor*1 is listed on final inspection sheet Measuring instruments that use portable devices such as smartphones and tablets *1: A conversion factor for converting the image sensor pixel number into a wavelength. A calculation factor for converting the A/D converted count into the input light level is not provided. Optical characteristics Parameter Spectral response range Spectral resolution (FWHM) Wavelength reproducibility*2 Wavelength temperature dependence Spectral stray light*3 Value 340 to 780 15 max. -0.5 to +0.5 -0.1 to +0.1 -25 Unit nm nm nm nm/°C dB *2: Measured under constant light input conditions *3: Spectral stray light = 10 × log (Tl/Th) Th: count measured when light at a certain wavelength is input Tl: count measured at a wavelength 40 nm longer or shorter than the input light wavelength Electrical characteristics Parameter Supply voltage Power consumption Video rate Output impedance Min. 4.75 0.25 - Typ. 5 30 150 *4 Max. 5.25 200 - Unit V mW kHz Ω *4: An increase in the current consumption at the video output terminal also increases the chip temperature and so causes the dark current to rise. To avoid this, connect a buffer amplifier for impedance conversion to the video output terminal so that the current flow is minimized. As the buffer amplifier, use a JFET or CMOS input operational amplifier of optical input impedance. www.hamamatsu.com 1 Micro-spectrometer C12666MA Structure Parameter Dimensions (W × D × H) Weight Slit*5 (H × V) NA*6 Image sensor (H × V) Number of pixels Pixel size (H × V) Specification 20.1 × 12.5 × 10.1 5 50 × 750 0.22 CMOS linear image sensor with a slit 256 12.5 × 1000 Unit mm g μm pixels μm Value +5 to +50 -20 to +70 Unit °C °C *5: Entrance slit aperture size *6: Numeric aperture (solid angle) Absolute maximum ratings Parameter Operating temperature*7 Storage temperature*7 *7: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Optical component layout Besides a CMOS image sensor chip integrated with an optical slit by etching technology, the C12666MA employs a reflective concave brazed grating formed by nanoimprint. In addition, the glass used in the light path of the previous C10988MA-01 is not used in the C12666MA, making it extremely compact. Previous product C10988MA-01 Structure CMOS linear image sensor with a slit Incident light C12666MA Entrance slit CMOS linear image sensor with a slit [Incident light side (back of chip)] Hollow Slit Reflective concave brazed grating Grating chip KACCC0757EB CMOS chip 2 Micro-spectrometer C12666MA Spectral response (typical example) Spectral resolution vs. wavelength (typical example) (Ta=25 °C) 100 (Ta=25 °C) 14 12 Spectral resolution (nm) Relative sensitivity (%) 80 60 40 20 10 8 6 4 2 0 300 400 500 600 700 0 300 350 400 450 500 550 600 650 700 750 800 800 Wavelength (nm) Wavelength (nm) KACCB0351EA KACCB0350EB Dark output vs. ambient temperature (typical example) 10 Typical example of A/D output Ideal A/D output Difference between ideal value and typical example 8 6 10000 A/D output 4 2 1000 0 -2 -4 100 -6 -8 10 10 100 1000 -10 10000 (using C11351-10, integration time 10 s, low gain) 70000 A/D output (averaged over all pixels) (using C11351-10, low gain) 100000 Difference between ideal value and typical example (%) Linearity (typical example) 60000 50000 40000 30000 20000 10000 0 0 10 20 30 40 50 Integration time (ms) Ambient temperature (°C) A/D output is the output with dark output is subtracted when light is input. The difference between the ideal value and typical example contains a measurement error. The smaller the A/D output, the larger the measurement error. A/D output is the sum of the sensor and circuit offset outputs and the sensor dark output. KACCB0354EB KACCB0352EA 3 Micro-spectrometer C12666MA Measurable incident light level C12666MA 10-13 10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 Incident light level* (W) * Input spot diameter: 800 μm (λ=550 nm) KACCB354EA Recommended driver circuit example Vdd C12666MA Gain 9 Gain CLK 4 CLK ST 7 ST EOS 10 EOS Timing generator Digital buffer A/D converter etc Vdd 1 Analog arithmetic circuit * (subtraction, amplification, etc.) Vdd 5 Case 3 GND + 2 Video * Use as needed KACCC0758EB Precautions · The packaging of C12666MA is electrically conductive, so be careful when designing the circuit to avoid short circuit caused by contact with a circuit pattern. · If external force is repeatedly applied to the lead pins, this may damage the lead pins. · To prevent damage due to soldering, be careful of the soldering temperature and time. As a general guide, finish soldering within 3.5 seconds at 350 °C or less when soldering by hand, or within 10 seconds at 260 °C or less when using a solder bath. 4 Micro-spectrometer C12666MA Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2) 0.5 Slit +0.1 ϕ3.2 -0 10.91 [Top view] 12.5 0.05 × 0.75 Index mark 20.12 Slit position 10.12 2.5 18.53 3.3 ± 0.3 0.7 [Side view] 0.47 ± 0.03 7.62 ϕ1.4 ± 0.05 7.62 2.54 [Bottom view] Vdd Video GND CLK Case NC ST NC Gain EOS KACCA0336EB Pin connections Make electrical connections to an external circuit using leads. Pin no. 1 2 3 4 5 6 7 8 9 10 Symbol Vdd Video GND CLK Case NC ST NC Gain EOS Name Supply voltage Video output Ground Clock pulse Case Start pulse Gain End of scan I/O I O I I I O Description Image sensor power supply: 5 V Video output signal Sensor ground Sensor scan sync signal Case connection terminal No connection Start pulse No connection Image sensor: Gain setting Sensor scan end signal Note: Pin no. 9 is pulled up internally to Vdd via 10 kΩ. Do not pull-up or pull-down the gain setting using an external circuit. For low gain, leave the pin open or connect to Vdd. For high gain, connect to GND. 5 Micro-spectrometer C12666MA Internal CMOS image sensor specifications Recommended terminal voltage Parameter Supply voltage Gain selection terminal voltage Clock pulse voltage Start pulse voltage Symbol Vdd High gain Low gain High level Low level High level Low level Gain V(CLK) V(ST) Min. 4.75 0 Vdd - 0.25 Vdd - 0.25 0 Vdd - 0.25 0 Typ. 5 Vdd Vdd Vdd - Max. 5.25 0.4 Vdd + 0.25 Vdd + 0.25 0.4 Vdd + 0.25 0.4 Unit V V V V V V V Min. 1 - Typ. - Max. 800 60 60 Unit kHz Min. 0.15 0.15 2.3 1.4 - Typ. 0.02 0.02 0.35 0.35 1.4 4.8 2.8 1.7 0.3 0.2 Max. 0.08 0.08 0.55 0.55 3.3 2.0 0.5 0.4 Unit Electrical characteristics Parameter Clock pulse frequency*8 Power consumption Symbol f(CLK) High gain Low gain P mW *8: Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 Electrical and optical characteristics Parameter Dark current Output offset voltage Charge amplifier feedback capacitance*9 Saturation output voltage*10 Readout noise Symbol High gain Low gain High gain Low gain High gain Low gain High gain Low gain High gain Low gain ID Vo Cf Vsat Nr pA V pF V mV rms *9: Gain=5 V (low gain), Vg=0 V (high gain) *10: Voltage difference relative to Vo 6 Micro-spectrometer C12666MA Timing chart Integration time CLK thw (ST) ST Video TRIG EOS tr(CLK) tf(CLK) CLK tr(ST) ST tf(ST) tvd Video KACCC0493EB Parameter Start pulse high period Start pulse rise/fall times Clock pulse duty ratio Clock pulse rise/fall times Video delay time Symbol thw(ST) tr(ST), tf(ST) tr(CLK), tf(CLK) tvd Min. 1030/f(CLK) 0 45 0 - Typ. 20 50 20 20 Max. 30 55 30 - Unit s ns % ns ns Note: The clock pulse should be set from high to low just once when the start pulse is low. The internal shift register starts operating at this timing. The integration time is determined by the start pulse intervals. However, since the charge integration of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge integration differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed. Video output is 1/4 of the clock pulse frequency. 7 Micro-spectrometer C12666MA Micro-spectrometer evaluation circuit C11351-10 (sold separately) The C11351-10 is a circuit board designed to simply evaluate the characteristics of the micro-spectrometer. The characteristics of the micro-spectrometer can be evaluated using the evaluation software by connecting the micro-spectrometer to a PC with a USB cable A9160 (AB type, sold separately)*11. Features Initial evaluation circuit for micro-spectrometer*12 Wavelength conversion factors of the micro-spectrometer can be input from a PC.*13 High A/D resolution (16-bit) USB powered *11: Compatible OS: Microsoft® Windows® 7 Professional SP1 (32-bit), Microsoft® Windows® 7 Professional SP1 (64-bit) Microsoft and Windows are registered trademarks of Microsoft Corporation in the United States and/or other countries. *12: The C11351-10 is a modified version of the C11351 evaluation circuit for the previous mini-spectrometer MS series (C10988MA-01, C11708MA). Only the sensor board has been modified. If you already have the C11351, you only have to purchase the C11351-03 (the sensor board for micro-spectrometers) to evaluate C12666MA micro-spectrometers. *13: A typical wavelength conversion factor is entered at the time of shipment of the C11351-10. To measure a spectrum with higher wavelength accuracy, it is necessary to input the wavelength conversion factor listed in the final inspection sheet that comes with each micro-spectrometer. Note: Since the C11351-10 is an evaluation circuit for the micro-spectrometer, the DLL function specifications are not available to users. Electrical characteristics Parameter Interface A/D conversion Clock pulse frequency Video rate Integration time Specification USB 2.0 16 800 200 5 to 10000 Unit bit kHz kHz ms Specification C12666MA 80 × 60 30 × 44 Unit mm mm Value +5 to +40 -20 to +70 Unit °C °C Structure Parameter Applicable spectrometer Control board Dimensions Sensor board Absolute maximum ratings Parameter Operating temperature*14 Storage temperature*14 *14: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. 8 Micro-spectrometer C12666MA Connection example USB cable A9160 (sold sepa p rately) separately) PC Detection source Control board Micro-spectrometer C12666MA (sold separately) Sensor board C11351-03 Micro-spectrometer evaluation circuit C11351-10 KACCC0759EA Evaluation software display example 9 Micro-spectrometer C12666MA Mini-spectrometer/micro-spectrometer lineup Type no. Type C10082CAH TM-UV/VIS-CCD High resolution C10082MD C10083CA C10083CAH Mini-spectrometer TM series C10082CA TM-UV/VIS-CCD High sensitivity TM-VIS/NIR-MOS-II Trigger-compatible C11118GA C13053MA C11007MA C11008MA Mini-spectrometer TG series Mini-spectrometer TG series C9914GB 6 TG-UV-CCD High resolution 200 to 400 500 to 1100 TG-RAMAN-I High resolution Back-thinned CCD image sensor CMOS linear image sensor 8 (λ=320 to 900 nm) Back-thinned CCD image sensor 1* (λ=320 to 900 nm) CMOS linear 8 image sensor High-sensitivity CMOS 8 linear image sensor Back-thinned CCD 3 image sensor Back-thinned CCD 1* image sensor IR-enhanced 5 CCD (λ=550 to 900 nm) Back-thinned image sensor Back-thinned CCD 0.3* image sensor 320 to 1000 TG-SWNIR-CCD-II IR-enhanced Image sensor 500 to 600 0.3* 790 to 920 IR-enhanced Back-thinned CCD image sensor TG2-NIR Mini-spectrometer Mini-spectrometer RC series FT series C9913GC 1* TG-RAMAN-II High resolution C11714CB C11482GA 200 to 800 TG-UV-CCD High sensitivity C9404CA Spectral resolution max. (nm) 6 TM-VIS/NIR-CCD High resolution C11697MB C11713CA Spectral response range (nm) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 600 TM-VIS/NIR-CCD High sensitivity TM-VIS/NIR-MOS Wide dynamic range C9405CB 400 TM-UV/VIS-MOS Wide dynamic range C10083MD C9404CAH 200 7 Non-cooled type 900 to 1700 TG-cooled NIR-I Low noise (cooled type) 7 TG-cooled NIR-II Low noise (cooled type) 1100 to 2200 TG-cooled NIR-III Low noise (cooled type) 900 to 2550 8 20 3.5 High sensitivity CMOS linear image sensor 9 CMOS linear image sensor 8 IR-enhanced CMOS linear image sensor Spectral resolution max. (nm) image sensor 9 CMOS linear image sensor 8 IR-enhanced CMOS linear image sensor Spectral resolution max. (nm) image sensor FT-SWIR-MOS-II 500 to 1100 Compact, thin RC-VIS-MOS 340 to 780 Spectrometer module RC-SWNIR-MOS 640 to 1050 Spectrometer module InGaAs linear image sensor * Typ. For installation into mobile measuring equipment C11009MA C11010MA Type Mini-spectrometer RC series Type no. 200 RC-VIS-MOS 400 Spectral response range (nm) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 600 340 to 780 Spectrometer head RC-SWNIR-MOS 640 to 1050 Spectrometer head For installation into mobile measuring equipment (ultra-compact type) C11708MA C12666MA Microspectrometer C10988MA-01 Type Mini-spectrometer MS series Type no. MS-VIS-MOS Spectrometer head MS-SWNIR-MOS Spectrometer head Spectrometer head 200 400 600 Spectral response range (nm) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 340 to 750 640 to 1050 340 to 780 14 20 15 CMOS linear image sensor CMOS linear image sensor 10 Micro-spectrometer C12666MA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions · Notice Technical information · Mini-spectrometer / Technical information Information described in this material is current as of December, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KACC1216E05 Dec. 2014 DN 11