Lateral multimode (broad stripe) CW Laser Diode L9277 Series ■FEATURES ●Radiant output power (CW): 1 W ●Peak emission wavelength: 830 nm ●Emitting area size: 50 µm × 1 µm ■APPLICATIONS ●Pumping source for solid state laser ●Processing ●Medical instrument ●Measuring instrument ■ABSOLUTE MAXIMUM RATINGS (Top(C) = 25 °C) Parameter Symbol Value Unit Φe 35 mW Forward current If 140 mA Reverse voltage Vr 1.5 V Top(c) 0 to +50 °C Tstg -20 to +80 °C Radiant output power Operating temperature Storage temperature ■ELECTRICAL AND OPTICAL CHARACTERISTICS (Top(C) = 25 °C) Parameter Symbol Conditions Radiant output power Φe If = 1.2 A Forward current Iop Peak emission wavelength λc Spectral radiation half bandwidth ∆λ Forward voltage Vop Φe = 1 W Min. — Value Typ. 1 Max. — — 1.2 — A — 830 — nm — 2 — nm Unit W — 2 — V Parallel θ// Φe = 1 W — 8 — degree Vertical θ⊥ FWHM — 32 — degree Emitting area — Value at designing — 50 × 1 — µm Lasing threshold current Ith — — 0.35 — A Beam spread angle Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K. Lateral multimode (broad stripe) CW Laser Diode L9277 Series Figure 2: Typical emission spectrum Figure 1: Radiant output power vs. Forward current (typ.) (Top(C) = 25 °C) 1.4 (Top(C) = 25 °C, Φe = 1 W) 100 90 Relative radiant output power (%) Radiant output power Φe (W) 1.2 1 0.8 0.6 0.4 0.2 80 70 60 50 40 30 20 10 0 0 0.2 0.4 0.8 0.6 1 1.2 1.4 0 820 1.6 830 825 Forward current If (A) 835 840 Wavelength (nm) Figure 3: Directivity (typ.) (Top(C) = 25 °C, Φe = 1 W) 100 Relative radiant output power (%) 90 80 Parallel θ// 70 60 50 Vertical θ⊥ 40 30 20 10 0 -60 -40 -20 0 20 40 60 Angle (degree) 2.0±0.1 1.9±0.2 5.0±0.1 4.0±0.3 4.0±0.3 3.0±0.1 2.2±0.1 LD 6.0±0.1 8.0±0.1 1.0±0.2 1.9±0.2 1.0±0.1 +0.02 0.15 - 0.05 2.4±0.1 3.8±0.2 9.4±0.1 0.4 10.0±0.3 8.8±0.2 1.5±0.1 1.8±0.1 2.54±0.2 1.0 LD chip Light output LD chip 7.0±0.5 0.45±0.05 Lead +0.02 Light output 5.1±0.5 0.3 MAX. Glass window 2.0 MIN. 0.15 - 0.05 2.4±0.2 5.7±0.2 LD chip 1.0±0.1 2.0±0.1 7.0 MAX. ● L9277-72 Head Out OHS 2.65±0.2 ● L9277-62 Side Out OHS +0 9.0 - 0.1 9.3±0.2 ● L9277-42 9.0CD 2.4±0.2 Figure 4: Dimensional outline (unit: mm) LD anode LD cathode 6.0±0.1 LD anode LD cathode N.C. LD cathode LD anode (Case) HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 1-8-3, Shinmiyakoda, Kita-ku, Hamamatsu City, Shizuoka, 431-2103, Japan, Telephone: (81)53-484-1301, Fax: (81)53-484-1302, E-mail: [email protected] U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Cat. No. LCWLD2012E01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Road North, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] OCT. 2012 IP