Catalog - Hamamatsu

PHOTOMULTIPLIER TUBE
R2496
Fast Time Response
10 mm (3/8 Inch) Diameter, 8-stage, Head-on, Bialkali Photocathode
FEATURES
●Coincident Resolving Time
with BaF2-BaF2/22Na ........................................... 0.45 ns
●Fast Time Response
Transit Time Spread (FWHM) ............................ 0.6 ns
●Quantum Efficiency at 225 nm .............................. 18 %
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
MateriaI
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Anode to Last Dynode
Direct Interelectrode
Anode to All Other Electrodes
Capacitances
Base
Operating Ambient Temperature
Storage Temperature
Weight
Suitable Socket
Description / Value
160 to 650
420
Bialkali
8
Fused silica
Linear focused
8
0.7
2.0
11-pin glass base
-30 to +50
-80 to +50
Approx. 5
E678-11N (supplied)
Unit
nm
nm
—
mm
—
—
—
pF
pF
—
°C
°C
g
—
Value
1500
0.03
Unit
V
mA
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode Current
Parameter
Between Anode and Cathode
CHARACTERISTICS (at 25 °C)
Cathode Sensitivity
Anode Sensitivity
Parameter
Luminous (2856 K)
Radiant at 420 nm
Blue Sensitivity Index (CS 5-58)
Luminous (2856 K)
Radiant at 420 nm
Gain
Anode Dark Current (After 30 minute storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
Transit Time Spread (FWHM)
Min.
60
—
—
30
—
—
—
—
—
—
Typ.
100
80
10.0
100
8.0 × 104
1.0 × 106
2
0.7
9.0
0.6
Max.
—
—
—
—
—
—
50
—
—
—
Unit
µA/lm
mA/W
—
A/lm
A/W
—
nA
ns
ns
ns
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8
P
Distribution Ratio
3
1.5
1.5
1
1
1
1
1
1
Supply Voltage: 1250 Vdc, K: Cathode, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R2496
Figure 1: Typical Spectral Response
TPMHB0566EA
107
TPMHB0567EA
CATHODE
RADIANT
SENSITIVITY
106
10
QUANTUM
EFFICIENCY
GAIN
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
100
Figure 2: Typical Gain Characteristics
1
104
0.1
0.01
105
200
400
600
103
500
800
WAVELENGTH (nm)
700
1000
1500
2000
SUPPLY VOLTAGE (V)
Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)
Socket E678-11N
(Supplied)
10.5 ± 0.5
8 MIN.
4.3
P
6
DY7
5
DY5
8
4
9 DY4
DY3 3
2
1
IC
11
K
10
DY2
10.5
9.5
SHORT PIN
3
10 MAX.
DY1
11 PIN BASE
DY6
11
45.0 ± 1.5
PHOTOCATHODE
DY8
7
3
FACEPLATE
TPMHA0442EA
9.5
TACCA0043EA
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
TPMH1229E02
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
DEC. 2010 IP