MIL-PRF-38534 CERTIFIED FACILITY
0033
FET INPUT HIGH SPEED VOLTAGE
FOLLOWER/BUFFER AMPLIFIER
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088
(315) 701-6751
FEATURES:
Industry Wide LH0033/EL2005 Replacement
Low Input Offset - 2mV
Low Input Offset Drift - 25μV/°C
FET Input, Low Input Current - 50pA
High Slew Rate - 1500V/μS
Wide Bandwidth - 140MHz
High Output Current - ±100mA
Available to DLA SMD 5962-80014
DESCRIPTION:
The MSK 0033(B) is a high speed, wide bandwidth voltage follower/buffer amplifier that is pin compatible with all
other 0033 designs. The FET input is cascaded to force the input characteristics to remain constant over the full input
voltage range. Significantly improved performance in sample and hold circuits is achieved since the DC bias current
remains constant with input voltage. The FET input also makes the MSK 0033 very accurate since it produces
extremely low input bias current, input offset voltage and input offset voltage drift specifications. Transistion times in
the range of 2.5 nS make the MSK 0033 fast enough for most high speed voltage follower/buffer amplifier applications.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
Sample And Hold
Impedance Buffers For A to D's
High Speed Line Drivers
CRT Deflection Driver
PIN-OUT INFORMATION
1
2
3
4
5
6
Positive Driver Power Supply
N/C
N/C
N/C
Input
Offset Preset
1
7
8
9
10
11
12
Offset Adjust
N/C
Negative Driver Power Supply
Negative Power Supply
Output
Positive Power Supply
8548-8 Rev. E 12/11
10
ABSOLUTE MAXIMUM RATINGS
±VCC
IOUT
VIN
TC
Supply Voltage
±20V
Output Current
±120mA
Differential Input Voltage
±20V
Case Operating Temperature
(MSK 0033B)
-55°C to +125°C
(MSK 0033)
-40°C to +85°C
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TST
TLD
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TJ
RTH
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Storage Temperature Range -65°C to +150°C
Lead Temperature Range
300°C
(10 Seconds)
Junction Temperature
175°C
Thermal Resistance
65°C/W
Junction to Case
Output Devices Only
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ELECTRICAL SPECIFICATIONS
MSK 0033B
Group A
Test Conditions
Parameter
MSK 0033
Subgroup
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
STATIC
Supply Voltage Range
-
±10
±15
±18
±10
±15
±18
V
VIN=0V
1
-
±19
±22
-
±19
±25
mA
Short Pin 6 to Pin 7 VIN=0V
1
-
±2.0
±10
-
±5
±15
mV
Short Pin 6 to Pin 7 VIN=0V
2,3
-
±25
±250
-
-
-
μV/°C
3 8
Quiescent Current
INPUT
Offset Voltage
Offset Voltage Drift
Offset Adjust
Adjust to Zero
mV
-
±50
±500
pA
±10
-
±2
-
nA
Adjust to Zero
Pin 6=open RPOT=200Ω From Pin 7 to Pin 9
1,2,3
VCM=0V
1
-
±50
±100
Either Input
2,3
-
±2
F=DC
Input Bias Current 9
Input Impedance 3
-
-
10
-
-
10
-
Ω
Power Supply Rejection Ratio 2
±10V≤VS≤±20V
-
65
75
-
60
75
-
dB
Input Noise Density 3
F=10Hz to 1KHz
-
-
1.5
-
-
1.5
-
μVRMS
Input Noise Voltage 3
F=1KHz
-
-
40
-
-
40
-
nV/√Hz
VIN=±14V RL=1KΩ
4
±12
±12.5
-
±12
±12.5
-
V
VIN=±10.5V RL=100Ω
4
±90
±110
-
±90
±110
-
mA
2V step
-
-
25
-
-
25
-
nS
VIN=1VRMS RL=1KΩ
-
-
140
-
-
140
-
MHz
Slew Rate-Rising Edge
VOUT=±10V
4
1000
1500
-
1000
1500
-
V/μS
Slew Rate-Falling Edge
VOUT=±10V
4
500
700
-
500
700
-
V/μS
RS=100Ω VIN=1VRMS F=1KHz
4
0.97
0.99
-
0.95
0.98
-
V/V
12
12
OUTPUT
Output Voltage Swing
Output Current
Settling Time to 1% 2 3
Bandwidth (-3dB) 3
TRANSFER CHARACTERISTICS
Voltage Gain
NOTES:
Unless otherwise specified ±VCC = ±15 VDC.
Measured within a high speed amplifier feedback loop.
Devices shall be capable of meeting the parameter, but need not be tested. Typical parameters are for reference only.
Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
Military grade devices ('B' suffix) shall be 100% tested to subgroups 1,2,3 and 4.
Subgroup 5 and 6 testing available upon request.
Subgroup 1,4
TA=TC=+25°C
Subgroup 2,5
TA=TC=+125°C
Subgroup 3,6
TA=TC=-55°C
8 Electrical specifications are derated for power supply voltages other than ±15VDC.
9 Measurement made 0.5 seconds after application of power. Actual DC continuous test limit is 2.5 nA at 25°C.
10 Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.
1
2
3
4
5
6
7
2
8548-8 Rev. E 12/11
APPLICATION NOTES
HEAT SINKING
RθSA = ((TJ - TA)/PD) - (RθJC) - (RθCS)
= ((125°C - 80°C) / .64W) - 65°C/W - .15°C/W
= 70.3 - 65.15
= 5.2°C/W
To determine if a heat sink is necessary for your application
and if so, what type, refer to the thermal model and governing
equation below.
The heat sink in this example must have a thermal resistance
of no more than 5.2°C/W to maintain a junction temperature of
no more than +125°C.
Thermal Model:
OFFSET VOLTAGE ADJUST
See Figure 1. To externally null the offset voltage, connect a
200Ω potentiometer between Pins 7 and 10 and leave Pin 6
open. If offset null is not necessary, short Pin 6 to Pin 7 and
remove the 200Ω potentiometer. Do not connect Pin 7 to Vcc.
Governing Equation:
TJ=PD x (RθJC + RθCS + RθSA) + TA
Where
TJ = Junction Temperature
PD = Total Power Dissipation
RθJC = Junction to Case Thermal Resistance
RθCS = Case to Heat Sink Thermal Resistance
RθSA = Heat Sink to Ambient Thermal Resistance
TC = Case Temperature
TA = Ambient Temperature
TS = Sink Temperature
Example:
CURRENT LIMITING
This example demonstrates a worst case analysis for the buffer
output stage. This occurs when the output voltage is 1/2 the
power supply voltage. Under this condition, maximum power
transfer occurs and the output is under maximum stress.
See Figure 1. If no current limit is required, short Pin 1 to Pin
12 and Pin 9 to Pin 10 and delete Q1 thru Q4 connections. Q1
through Q4 and the Rlim resistors form a current source current
limit scheme and current limit resistor values can be calculated
as follows:
+Rlim ≅ Vbe
-Rlim ≅ Vbe
Isc
Isc
Since current limit is directly proportional to the base-emitter
voltage drop of the 2N2222's and 2N2907's in the current
limit scheme, the current limit value will change slightly with
ambient temperature changes. The base-emitter voltage drop
will decrease as temperature increases causing the actual current limit point to decrease.
Conditions:
VCC = ±16VDC
VO = ±8Vp Sine Wave, Freq. = 1KHz
RL = 100Ω
For a worst case analysis we will treat the ±8Vp sine wave
as an 8 VDC output voltage.
1.) Find Driver Power Dissipation
PD = (VCC-VO) (VO/RL)
= (16V-8V) (8V/100Ω)
= 640mW
2.) For conservative design, set TJ=+125°C Max.
3.) For this example, worst case TA=+80°C
4.) RθJC = 65°C/W from MSK 0033B Data Sheet
5.) RθCS = 0.15°C/W for most thermal greases
6.) Rearrange governing equation to solve for RθSA
POWER SUPPLY BYPASSING
Both the negative and the positive power supplies must be
effectively decoupled with a high and low frequency bypass
circuit to avoid power supply induced oscillation. An effective
decoupling scheme consists of a 0.1 microfarad ceramic capacitor in parallel with a 4.7 microfarad tantalum capacitor from
each power supply pin to ground.
3
8548-8 Rev. E 12/11
TYPICAL APPLICATIONS
4
8548-8 Rev. E 12/11
TYPICAL PERFORMANCE CURVES
5
8548-8 Rev. E 12/11
MECHANICAL SPECIFICATIONS
WEIGHT=2.8 GRAMS TYPICAL
ALL DIMENSIONS ARE ±0.010 INCHES UNLESS OTHERWISE LABELED
ORDERING INFORMATION
Part
Number
Screening Level
MSK0033
Industrial
MSK0033B
MIL-PRF-38534 Class H
8001401ZX
DLA - SMD
M.S. Kennedy Corp.
4707 Dey Road, Liverpool, New York 13088
Phone (315) 701-6751
FAX (315) 701-6752
www.mskennedy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
Please visit our website for the most recent revision of this datasheet.
6
8548-8 Rev. E 12/11