GB03SLT12-220 Silicon Carbide Power Schottky Diode Features Package • 1200 V Schottky rectifier • 175 °C maximum operating temperature • Zero reverse recovery charge • Positive temperature coefficient of VF • Extremely fast switching speeds • Temperature independent switching behavior • Lowest figure of merit QC/IF • RoHS Compliant VRRM = 1200 V IF QC = 3A = 11 nC Case PIN 1 CASE PIN 2 1 2 TO – 220AC Advantages Applications • Improved circuit efficiency (Lower overall cost) • Low switching losses • Ease of paralleling devices without thermal runaway • Smaller heat sink requirements • Industry's lowest reverse recovery charge • Industry's lowest device capacitance • Ideal for output switching of power supplies • Best in class reverse leakage current at operating temperature • Power Factor Correction (PFC) • Switched-Mode Power Supply (SMPS) • Solar Inverters • Wind Turbine Inverters • Motor Drives • Induction Heating • Uninterruptible Power Supply (UPS) • Voltage Clamping • High Voltage Multipliers Maximum Ratings, at Tj = 175 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current i2t value Power dissipation Operating and storage temperature Symbol Conditions IF TC ≤ 150 °C IF(RMS) TC ≤ 150 °C Values 1200 3 5 IF,SM TC = 25 °C, tp = 10 ms 10 IF,max TC = 25 °C, tp = 10 µs TC = 25 °C, tp = 10 ms 45 0.5 85 -55 to 175 VRRM ∫i2 dt Ptot TC = 25 °C Tj, Tstg Unit V A A A A A2s W °C Electrical Characteristics, at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions IF = 3 A, Tj = 25 °C Diode forward voltage VF Reverse current IR Total capacitive charge Switching time QC ts VR = 950 V, IF ≤ IF,max dIF/dt = 330 A/μs, Tj = 150 °C Total capacitance C VR = 3 V, f = 1 kHz, Tj = 25 °C VR = 200 V, f = 1 kHz, Tj = 25 °C IF = 3 A, Tj = 175 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 175 °C min. Values typ. 1.65 2.90 3 10 11 < 15 102 18 max. Unit V µA nC ns pF Thermal Characteristics Thermal resistance, junction - case RthJC 1.76 °C/W M 0.6 Nm Mechanical Properties Mounting torque 1. Considering worst case Zth conditions http://www.genesicsemi.com/index.php/sic-products/schottky November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 1 of 4 GB03SLT12-220 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Power Derating Curve Figure 4: Typical Current Derating Curves (D = tP/T, tP = 400 µs1) Figure 5: Typical Junction Capacitance versus Reverse Voltage Characteristics Figure 6: Typical Switching Energy versus Reverse Voltage Characteristics November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 2 of 4 GB03SLT12-220 Figure 7: Typical Current versus Pulse Duration Curves at TC =150 OC Figure 8: Typical Transient Thermal Impedance Package Dimensions: TO-220AC PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 3 of 4 GB03SLT12-220 Revision History Date 2010/11/20 Revision 1 Comments Second generation release Supersedes GA03SLT12-220 Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 4 of 4