Datasheet

GB03SLT12-220
Silicon Carbide Power
Schottky Diode
Features
Package
• 1200 V Schottky rectifier
• 175 °C maximum operating temperature
• Zero reverse recovery charge
• Positive temperature coefficient of VF
• Extremely fast switching speeds
• Temperature independent switching behavior
• Lowest figure of merit QC/IF
• RoHS Compliant
VRRM
=
1200 V
IF
QC
=
3A
=
11 nC
Case
PIN 1
CASE
PIN 2
1
2
TO – 220AC
Advantages
Applications
• Improved circuit efficiency (Lower overall cost)
• Low switching losses
• Ease of paralleling devices without thermal runaway
• Smaller heat sink requirements
• Industry's lowest reverse recovery charge
• Industry's lowest device capacitance
• Ideal for output switching of power supplies
• Best in class reverse leakage current at operating temperature
• Power Factor Correction (PFC)
• Switched-Mode Power Supply (SMPS)
• Solar Inverters
• Wind Turbine Inverters
• Motor Drives
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Voltage Clamping
• High Voltage Multipliers
Maximum Ratings, at Tj = 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
i2t value
Power dissipation
Operating and storage temperature
Symbol
Conditions
IF
TC ≤ 150 °C
IF(RMS)
TC ≤ 150 °C
Values
1200
3
5
IF,SM
TC = 25 °C, tp = 10 ms
10
IF,max
TC = 25 °C, tp = 10 µs
TC = 25 °C, tp = 10 ms
45
0.5
85
-55 to 175
VRRM
∫i2 dt
Ptot
TC = 25 °C
Tj, Tstg
Unit
V
A
A
A
A
A2s
W
°C
Electrical Characteristics, at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
IF = 3 A, Tj = 25 °C
Diode forward voltage
VF
Reverse current
IR
Total capacitive charge
Switching time
QC
ts
VR = 950 V, IF ≤ IF,max
dIF/dt = 330 A/μs, Tj = 150 °C
Total capacitance
C
VR = 3 V, f = 1 kHz, Tj = 25 °C
VR = 200 V, f = 1 kHz, Tj = 25 °C
IF = 3 A, Tj = 175 °C
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
min.
Values
typ.
1.65
2.90
3
10
11
< 15
102
18
max.
Unit
V
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
RthJC
1.76
°C/W
M
0.6
Nm
Mechanical Properties
Mounting torque
1. Considering worst case Zth conditions
http://www.genesicsemi.com/index.php/sic-products/schottky
November 2010
Preliminary Datasheet
http://www.genesicsemi.com
Page 1 of 4
GB03SLT12-220
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Typical Power Derating Curve
Figure 4: Typical Current Derating Curves (D = tP/T, tP = 400 µs1)
Figure 5: Typical Junction Capacitance versus Reverse Voltage
Characteristics
Figure 6: Typical Switching Energy versus Reverse Voltage
Characteristics
November 2010
Preliminary Datasheet
http://www.genesicsemi.com
Page 2 of 4
GB03SLT12-220
Figure 7: Typical Current versus Pulse Duration Curves at TC =150 OC
Figure 8: Typical Transient Thermal Impedance
Package Dimensions:
TO-220AC
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
November 2010
Preliminary Datasheet
http://www.genesicsemi.com
Page 3 of 4
GB03SLT12-220
Revision History
Date
2010/11/20
Revision
1
Comments
Second generation release
Supersedes
GA03SLT12-220
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury
and/or property damage.
November 2010
Preliminary Datasheet
http://www.genesicsemi.com
Page 4 of 4