S20S30

MOSPEC
S20S30 thru S20S60
Schottky Barrier Rectifiers
SCHOTTKY BARRIER
RECTIFIERS
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
20 AMPERES
30-60 VOLTS
Features
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊150℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
TO-263 (D2-PAK)
＊ESD: 4KV(Min.) Human-Body Model
＊In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( Per diode )
Total Device (Rated VR), TC=125℃
Symbol
S20S
Unit
30
35
40
45
50 60
VRRM
VRWM
VR
30
35
40
45
50 60
V
VR(RMS)
21
25
28
32
35 42
V
IF(AV)
10
20
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
20
A
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single
phase, 60Hz)
IFSM
200
A
TJ , Tstg
-65 to +150
℃
Operating and Storage Junction Temperature
Range
ELECTRIAL CHARACTERISTICS
Characteristic
S20S
Symbol
30
Maximum Instantaneous Forward Voltage
( IF =10 Amp TC = 25℃)
( IF =10 Amp TC = 100℃)
Typical Thermal Resistance junction to case
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 100℃)
VF
35
40
0.55
0.48
45
Unit
50 60
0.70
0.60
V
Rθ j-c
3.4
℃/w
IR
0.5
20
mA
DIM
A
B
C
D
E
G
H
J
K
S
V
X
MILLIMETERS
MIN
MAX
8.12
8.92
9.90
10.30
4.23
4.83
0.51
0.89
1.27
1.53
2.54
BSC
2.03
2.79
0.31
0.51
2.29
2.79
14.60
15.88
1.57
1.83
--1.40
S20S30 Thru S20S60
NSTANTANEOUS FORWARD CURRENT (Amp.)
FIG-2 TYPICAL FORWARD CHARACTERISITICS
TJ=125℃
S20S50-60
TJ=25℃
S20S50-60
TJ=125℃
S20S30-45
TJ=25℃
S20S30-45
CASE TEMPERATURE (℃)
FORWARD VOLTAGE (Volts)
FIG-3 TYPICAL REVERSE CHARACTERISTICS
FIG-4 TYPICAL JUNCTION CAPACITANCE
o
Tj=100 c
o
Tj=75 c
o
Tj=25 c
PERCENT OF RATED REVERSE VOLTAGE (﹪)
JUNCTION CAPACITANCE (PF)
INSTANTANEOUS REVERSE CURRENT (mA.)
AVERAGE FORWARD RECTIFIED CURRENT (Amp.)
FIG-1 FORWARD CURRENT DERATING CURVE
S20S30-S20S45
S20S50-S20S60
REVERSE VOLTAGE (Volts)
PEAK FORWARD SURGE
CURRENT (Amp.)
FIG-5 PEAK FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
DJ-A