MOSPEC S10S30 thru S10S60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. 10 AMPERES 30-60 VOLTS Features *Low Forward Voltage. *Low Switching noise. *High Current Capacity *Guarantee Reverse Avalanche. *Guard-Ring for Stress Protection. *Low Power Loss & High efficiency. *150℃ Operating Junction Temperature *Low Stored Charge Majority Carrier Conduction. *Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O *ESD: 8KV(Min.) Human-Body Model *In compliance with EU RoHs 2002/95/EC directives TO-263 (D2-PAK) MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Total Device (Rated VR), TC=125℃ Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range S10S Symbol Unit 30 35 40 45 50 60 VRRM VRWM VR 30 35 40 45 50 60 V VR(RMS) 21 25 28 32 35 42 V IF(AV) 5.0 10 A IFM 10 A 125 A -65 to +150 ℃ IFSM TJ , Tstg ELECTRIAL CHARACTERISTICS Characteristic S10S Symbol 30 Maximum Instantaneous Forward Voltage ( IF =5 Amp TC = 25℃) ( IF =5 Amp TC = 100℃) Typical Thermal Resistance junction to case Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) VF 35 40 45 0.55 0.47 Unit 50 60 0.70 0.60 V Rθ j-c 4.2 ℃/w IR 0.5 20 mA DIM A B C D E G H J K S V X MILLIMETERS MIN MAX 8.12 8.92 9.90 10.30 4.23 4.83 0.51 0.89 1.27 1.53 2.54 BSC 2.03 2.79 0.31 0.51 2.29 2.79 14.60 15.88 1.57 1.83 --1.40 S10S30 Thru S10S60 NSTANTANEOUS FORWARD CURRENT (Amp.) FIG-2 TYPICAL FORWARD CHARACTERISITICS S10S30-S10S45 S10S50-S10S60 CASE TEMPERATURE (℃) FORWARD VOLTAGE (Volts) FIG-3 TYPICAL REVERSE CHARACTERISTICS FIG-4 TYPICAL JUNCTION CAPACITANCE o Tj=100 c o Tj=75 c o Tj=25 c PERCENT OF RATED REVERSE VOLTAGE (﹪) PEAK FORWARD SURGE CURRENT (Amp.) FIG-5 PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60 Hz JUNCTION CAPACITANCE (PF) INSTANTANEOUS REVERSE CURRENT (mA.) AVERAGE FORWARD RECTIFIED CURRENT (Amp.) FIG-1 FORWARD CURRENT DERATING CURVE S10S30-S10S45 S10S50-S10S60 REVERSE VOLTAGE (Volts)