MOSPEC S10S70 Thru S10S100 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. 5.0 AMPERES 70-100 VOLTS *Low Forward Voltage. *Low Switching noise. *High Current Capacity *Guarantee Reverse Avalanche. *Guard-Ring for Stress Protection. *Low Power Loss & High efficiency. *150℃ Operating Junction Temperature *Low Stored Charge Majority Carrier Conduction. *Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O *ESD: 4KV(Min.) Human-Body Model TO-263 (D2-PAK) *In compliance with EU RoHs 2002/95/EC directives MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Per diode Total Device (Rated VR), TC=125℃ Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half-wave, single phase,60Hz ) Operating and Storage Junction Temperature Range S10S Symbol Unit 70 80 90 100 VRRM VRWM VR 70 80 90 100 V VR(RMS) 49 56 63 70 V 5 10 A 125 A -65 to +150 ℃ IO IFSM TJ , TSTG ELECTRIAL CHARACTERISTICS Characteristic S10S Symbol 70 80 Maximum Instantaneous Forward Voltage (IF =5.0 Amp) VF Maximum Instantaneous Reverse Current (Rated DC Voltage, TC = 25℃) (Rated DC Voltage, TC = 125℃) IR 0.5 20 Maximum Thermal Resistance Junction to Case RθJc 4.2 Typical Junction Capacitance (Reverse Voltage of 4 volts & f=1 MHz) CP 0.75 300 Unit 90 100 0.85 V mA o 275 C/W PF DIM A B C D E G H J K S V X MILLIMETERS MIN MAX 8.12 8.92 9.90 10.30 4.23 4.83 0.51 0.89 1.27 1.53 2.54 BSC 2.03 2.79 0.31 0.51 2.29 2.79 14.60 15.88 1.57 1.83 --1.40 S10S70 thru S10S100 NSTANTANEOUS FORWARD CURRENT (Amp.) FIG-2 TYPICAL FORWARD CHARACTERISITICS S10S70,S10S80 S10S90,S10S100 CASE TEMPERATURE (℃) FORWARD VOLTAGE (Volts) FIG-3 TYPICAL REVERSE CHARACTERISTICS FIG-4 TYPICAL JUNCTION CAPACITANCE o Tj=125 c o Tj=75 c o Tj=25 c PERCENT OF RATED REVERSE VOLTAGE (﹪) PEAK FORWARD SURGE CURRENT (Amp.) FIG-5 PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60 Hz JUNCTION CAPACITANCE (PF) INSTANTANEOUS REVERSE CURRENT (mA.) AVERAGE FORWARD RECTIFIED CURRENT (Amp.) FIG-1 FORWARD CURRENT DERATING CURVE S10S70,-S10S80 S10S90,S10S100 REVERSE VOLTAGE (Volts)