1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0142-0300 Rev.3.00 May 24, 2007 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Part No. Cathode Mark Package Name Package Code 1SS286 GREEN 7 MHD GRZZ0002ZC-A 7 Pin Arrangement 2 1 Cathode band 1. Cathode 2. Anode REJ03G0142-0300 Rev.3.00 May 24, 2007 Page 1 of 4 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Reverse voltage VR Value 25 Unit V Forward current Power dissipation IF Pd 35 150 mA mW Junction temperature Storage temperature Tj Tstg 100 −55 to +100 °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF Reverse voltage Reverse current Capacitance *3 Capacitance deviation Forward voltage deviation *1 ESD-Capability *3 Min — Typ — Max 0.60 Unit V VR IR 25 — — — — 10 nA IF = 10 µA VR = 10 V C ∆C — — — — 1.20 0.10 pF pF VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz ∆VF — — 10 — — 10 — mV V IF = 10mA C = 200 pF, R = 0 Ω , Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 20 nA at VR = 10 V 2. Each group shall unify a multiple of 4 diodes 3. Not applied to taping-type products. REJ03G0142-0300 Rev.3.00 May 24, 2007 Page 2 of 4 V Test Condition IF = 10 mA 1SS286 Main Characteristic 10–6 10–1 10–3 Reverse current IR (A) Forward current IF (A) 10–2 10–4 10–5 10–6 10–7 10–7 10–8 10–9 10–8 10–9 0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 10 f = 1MHz Capacitance C (pF) 10–10 1.0 0.1 1.0 10 40 Reverse voltage VR (V) Fig.2 Capacitance vs. Reverse voltage REJ03G0142-0300 Rev.3.00 May 24, 2007 Page 3 of 4 1SS286 Package Dimensions JEITA Package Code RENESAS Code GRZZ0002ZC-A L Previous Code MHD / MHDV MASS[Typ.] 0.084g φb E L φD Package Name MHD Reference Symbol φb φD E L REJ03G0142-0300 Rev.3.00 May 24, 2007 Page 4 of 4 Dimension in Millimeters Min 26.0 Nom 0.4 2.0 - Max 2.4 - Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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