ROHM 2SB1709

2SB1709
Transistors
Genera purpose amplification(−12V, −1.5A)
2SB1709
zExternal dimensions (Unit : mm)
zApplication
Low frequency amplifier
Driver
TSMT3
1.0MAX
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −200mV
at IC = −500mA / IB = −25mA
2.9
0.85
0.4
0.7
1.6
2.8
(3)
0.3~0.6
0~0.1
(2)
(1)
0.95 0.95
1.9
0.16
(1) Base
(2) Emitter
Each lead has same dimensions
(3) Collector
zPackaging specifications
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICP
PC
Power dissipation
Junction temperature
Tj
Range of storage temperature
Tstg
Limits
−15
−12
−6
−1.5
−3
500
150
−55~+150
Unit
V
V
V
A
A ∗1
mW∗2
°C
°C
Package
Type
Taping
Code
TL
Basic ordering unit (pieces)
3000
2SB1709
∗1Single pulse, PW=1ms
∗2Each Terhinal Mounted on a Recommended Land
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−15
−12
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−85
−
400
12
Max.
−
−
−
−100
−100
−200
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−10µA
IC=−1mA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−500mA, IB=−25mA
VCE=−2V, IC=−200mA ∗
VCE=−2V, IE=200mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
∗
∗ Pulsed
Rev.B
1/2
2SB1709
Transistors
VCE=−2V
PULSED
Ta=100°C
25°C
100
−40°C
10
0.001
0.01
0.1
1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
DC CURRENT GAIN : hFE
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
1
Ta=−40°C
25°C
100°C
0.1
Ta=100°C
25°C
−40°C
0.01
IC/IB=20
PULSED
0.001
0.001
0.01
0.1
1
10
10
1
Ta=25°C
PULSED
0.1
IC/IB=50
20
10
0.01
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
vs.collector current
Fig.3 Base-emitter saturation voltage
vs.collector current
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR CURRENT : IC (A)
1000
VCE=−2V
PULSED
1
Ta=100°C
25°C
−40°C
0.1
0.01
0.001
0
0.5
1
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.5 Grounded emitter propagation
characteristics
Ta=25°C
VCE=−2V
f=100MHz
100
10
0.001
0.01
0.1
1
EMITTER CURRENT : IE (A)
Fig.6 Gain bandwidth product
vs. emitter current
10
Fig.4 Collector-emitter saturation
voltage vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.1 DC current gain vs.
collector current
10
COLLECTOR CURRENT : IC (A)
100
Ta=25°C
IE=0mA
f=1MHz
10
1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1