NTE74HC02 Integrated Circuit TTL − High Speed CMOS, Quad 2

NTE74HC02
Integrated Circuit
TTL − High Speed CMOS,
Quad 2−Input NOR Gate
Description:
The NTE74HC02 is a NOR gate in a 14−Lead plastic DIP type package fabricated using advanced
silicon−gate CMOS technology which provides the inherent benefits of CMOS − low quiescent power
and wide power supply range. This device is input and output characteristic and pinout compatible
with standard NTE74LS logic families. All inputs are protected from static discharge damage by internal diodes to VCC and ground.
The NTE74HC02 is intended to interface between TTL and NMOS components and standard CMOS
devices. This device is also a plug−in replacement for LS−TTL devices and can be used to reduce
power consumption in existing designs.
Features:
D Output Drive Capability: 10 LSTTL Loads
D Outputs Directly Interface to CMOS, NMOS, and TTL
D Operating Voltage range: 2V to 6V
D Low Input Current: 1.0μA
D High Noise Immunity Characteristics of CMOS Devices
Absolute Maximum Ratings: (Note 1, Note 2)
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to +7.0V
DC Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to VCC +0.5V
DC Output Voltage, VOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to VCC + 0.5V
DC Input Current (Per Pin), IIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA
DC Output Current (Per Pin), IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25mA
DC VCC or GND Current (Per Pin), ICC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50mA
Power Dissipation (Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C
Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may
not function or be operable above the Recommended Operating Conditions and stressing the
parts to these levels is not recommended. In addition, extended exposure to stresses above
the Recommended Operating Conditions may effect device reliability. The Absolute Maximum
Ratings are stress ratings only.
Note 2. Unless otherwise specified, all voltages are referenced to GND.
Note 3. Power Dissipation temperature derating: 12mW/°C from +65°C to +85°C.
Recommended Operating Conditions:
Parameter
Symbol
Min
Typ
Max
Unit
VCC
2.0
−
6.0
V
VIN, VOUT
0
−
VCC
V
Operating Temperature Range
TA
−55
−
+125
°C
Input Rise or Fall Times
VCC = 2.0V
tr, tf
−
−
1000
ns
VCC = 4.5V
−
−
500
ns
VCC = 6.0V
−
−
400
ns
Supply Voltage
DC Input or Output Voltage
DC Electrical Characteristics: (Voltages Referenced to GND unless otherwise specified)
Parameter
Minimum High Level Input Voltage
Maximum Low Level Input Voltage
Minimum High Level Output Voltage
Symbol
VIH
VIH
VOH
Maximum Low Level Output Voltage
VOL
−55 to +25C
85C
125C
Unit
2.0
1.50
1.50
1.50
V
3.0
2.10
2.10
2.10
V
4.5
3.15
3.15
3.15
V
6.0
4.20
4.20
4.20
V
2.0
0.50
0.50
0.50
V
3.0
0.90
0.90
0.90
V
4.5
1.35
1.35
1.35
V
6.0
1.80
1.80
1.80
V
2.0
1.9
1.9
1.9
V
4.5
4.4
4.4
4.4
V
6.0
5.9
5.9
5.9
V
|IOUT| ≤ 2.4mA
3.0
2.48
2.34
2.20
V
IOUT| ≤ 4.0mA
4.5
3.98
3.84
3.70
V
IOUT| ≤ 5.2mA
6.0
5.48
5.34
5.20
V
2.0
0.1
0.1
0.1
V
4.5
0.1
0.1
0.1
V
6.0
0.1
0.1
0.1
V
|IOUT| ≤ 2.4mA
3.0
0.26
0.33
0.40
V
IOUT| ≤ 4.0mA
4.5
0.26
0.33
0.40
V
IOUT| ≤ 5.2mA
6.0
0.26
0.33
0.40
V
Test Conditions
VOUT = 0.1V or VCC −0.1V,
|IOUT ≤ 20μA|
VOUT = 0.1V or VCC −0.1V,
|IOUT| ≤ 20μA
VIN = VIH or VIL, |IOUT| ≤ 20μA
VIN = VIH
or VIL
VIN = VIH or VIL, |IOUT| ≤ 20μA
VIN = VIH
or VIL
Guaranteed Limits
VCC
(V)
Maximum Input Leakage Current
IIN
VIN = VCC or GND
6.0
±0.1
±1.0
±1.0
μA
Maximum Quiescent Supply Current
ICC
VIN = VCC or GND, IOUT = 0μA
6.0
2.0
20
40
μA
AC Electrical Characteristics: (tr = tf = 6ns, CL = 50pF unless otherwise specified)
Parameter
Maximum Propagation Delay,
Input A or B to Output Y
Symbol
tPLH,
tPHL
Test Conditions
Guaranteed Limits
VCC
(V)
−55 to +25C
85C
125C
Unit
2.0
75
95
110
ns
3.0
30
40
55
ns
4.5
15
19
22
ns
6.0
13
16
19
ns
AC Electrical Characteristics (Cont’d): (tr = tf = 6ns, CL = 50pF unless otherwise specified)
Parameter
Maximum Output Transition Time,
Any Output
Maximum Input Capacitance
Parameter
Power Dissipation Capacitance
(Per Buffer)
Symbol
Test Conditions
tTLH,
tTHL
Cin
Symbol
CPD
Guaranteed Limits
VCC
(V)
−55 to +25C
85C
125C
Unit
2.0
75
95
110
ns
3.0
30
40
55
ns
4.5
15
19
22
ns
6.0
13
16
19
ns
−
10
10
10
pF
Test Conditions
Typical @ +25C, VCC = 5V, VEE = 0V
Unit
22
pF
Note 4
Note 4. CPD determines the no load dynamic power consumption, PD = CPD VCC2 f + ICC VCC
A
L
L
H
H
Truth Table:
Inputs
Output
B
Y
L
H
H
L
L
L
H
L
Logic Diagram
A1
B1
A2
B2
2
1
3
5
4
6
Y1
Y2
Y=A+B
A3
B3
A4
B4
8
10
9
11
13
12
Pin14 = VCC
Pin7 = GND
Y3
Y4
Pin Connection Diagram
1Y 1
14 VCC
1A 2
1B 3
13 4Y
12 4B
2Y 4
11 4A
2A 5
10 3Y
2B 6
9 3B
GND 7
8 3A
14
8
1
7
.300 (7.62)
.785 (19.95) Max
.200
(5.08)
Max
.100 (2.45)
.600 (15.24)
.099 (2.5) Min