Preliminary RJH60D1DPE Silicon N Channel IGBT Application: Inverter REJ03G1840-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 1. Gate 2. Collector 3. Emitter 4. Collecotor G 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to Emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C REJ03G1840-0100 Rev.1.00 Oct 14, 2009 Page 1 of 3 Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 θj-c Note2 Tj Ratings 600 ±30 16 8 32 8 32 70 1.79 150 Unit V V A A A A A W °C/ W °C Tstg –55 to +150 °C RJH60D1DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol ICES / IR Min — Typ — Max 100 Unit μA IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf — 4.0 — — — — — — — — — — — — — — 1.8 2.3 290 25 7.5 12.0 2.0 6.0 25 35 40 100 ±1 6.0 2.2 — — — — — — — — — — — μA V V V pF pF pF nC nC nC ns ns ns ns VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 8 A, VGE = 15 V Note3 IC = 16 A, VGE = 15 V Note3 FRD forward voltage VF trr 1.8 100 2.3 — V ns IF = 8 A Note3 FRD reverse recovery time — — Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Notes: 3. Pulse test. 4. Under development. −The specification potentially be changed without notice. REJ03G1840-0100 Rev.1.00 Oct 14, 2009 Page 2 of 3 Test Conditions VCE = 600 V, VGE = 0 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 8 A IC = 8 A RL = 37.5 Ω VGE = 15 V Rg = 5 Ω IF = 8 A diF/dt = 100 A/μs RJH60D1DPE Preliminary Package Dimension JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g (1.4) 4.44 ± 0.2 7.8 6.6 (1.5) 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 + 0.3 – 0.5 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Part No. RJH60D1DPE-00-J3 Quantity 1000 pcs REJ03G1840-0100 Rev.1.00 Oct 14, 2009 Page 3 of 3 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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