polyfet rf devices MGMP01 Power RF Amplifiers Power = 1.0 Watts Bandwidth = 225 to 400 Mhz Gain = 18.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MGMP01 is a 1 Watt, linear, 10W P1dB, single stage high gain amplifier covering a bandwidth of 225-400 Mhz using SMA connectors for RF in and out. Input VSWR is <=1.5:1 and output VSWR is <=3:1. Module is unconditionally stable at all phase angles up to 10:1. External heat sink is required Absolute Maximum Ratings (T=25 oC) Parameter DC supply Voltage 1 DC supply Voltage 2 AGC Voltage Symbol VDD1 VDD2 VAGC AGC Current VAGCI Input Power Output Power Operating Case Temp. Storage Temperature Pin Pout Tc Tstg Value 32.0 Unit V V V mA 1.000 40.0 -40 to +85 -55 to +100 W W o C oC Electrical Characteristics: ( T=25 oC Zs=Zl=50 ohms, Vdd = 28.0 Volts, Idq = 1.4 Amps ) Parameter Frequency Range Outut Power Power Gain Total Efficiency 2nd Harmonics Intermod - 2 tone Load Mismatch Tolerance Vagc Voltage Symbol BW Po PG Pulse Responese Time Pr h dso Im3 VSWR VAGC Min Typical 225 400 1.0 18.0 2 -45.00 -40.00 10:1 Max Unit Test Conditions Mhz 50 ohm load Watts Pin = 12.0 dbm Vagc = 0.0 V dB Pout = 1.0 Watts Vagc = 0.0 V Pout = 1.0 Watts % Pout = 2.0 Watts @ dBc Mhz dBc AvePwr= 1.0 Watts Relative All Phase Angles Pout = 1.0 Watts Pin = 12.0 dBm, Pout = 1.0 W V uS POLYFET RF DEVICES Pulse source: REVISION 11/03/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MGMP01 MGMP01: Pout/Gain vs Pin, Freq=400MHz, Vds=28V, Idq=1.40A MGMP01: Pout/Gain vs Pin, Freq=225MHz, Vds=28V, Idq=1.40A 45 45 25 25 40 40 Gain 35 35 Gain 30 Gain in dB 20 15 Pout 25 20 15 15 10 20 Gain in dB Pout in Watts 20 Pout 25 Pout in Watts 30 15 10 P1dB= 20W 5 P1dB= 24W 5 0 0.00 0.25 0.50 0.75 Pin in Watts 1.00 10 1.50 1.25 0 0.00 0.10 0.20 0.40 0.50 Pin in Watts 0.60 0.70 10 0.90 0.80 MGMP01: P1dB vsFreq, Vds=28V, Idq=1.40A MGMP01: Gain/Eff vs Freq, Vds=28V, Idq=1.40APout=1W 30.0 0.30 10.0% 30.00 7.5% 25.00 27.5 22.5 17.5 15.0 5.0% Efficiency 12.5 Efficiency Gain in dB 20.0 P1dB in W Gain 25.0 P1dB 20.00 10.0 7.5 15.00 2.5% 5.0 2.5 0.0 10.00 225 0.0% 225 250 275 300 325 350 375 400 250 275 300 350 375 400 MGMP01: IM3 vs PEP, Typical, Vds=28V, Idq=1.40A 1MHz seperation MGMP01: Harm vs Power out, Typical, Vds=28V, Idq=1.40A -15.0 -20 -20.0 -25 -25.0 -35 2nd 3rd -40 IM3 in dBc -30 Harm Atten in dBc 325 Frequency in MHz Frequency in MHz -30.0 IM3 -35.0 -45 -40.0 -50 -45.0 -50.0 -55 1 2 4 10 20 30 40 1 2 4 10 20 30 40 PEP in Watts Power out in Watts POLYFET RF DEVICES REVISION 11/03/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com