Polyfet RF Devices TB-170 L8821P-->LK421 Pout vs Pin Freq=30MHz Vds=12.5Vdc Idq=1.2A 24 27.0 Linear @5W 18 26.0 Pout 12 25.0 Gain Efficiency @15W= 35% 6 24.0 0 23.0 0 0.02 0.04 Pin in Watts Page 1 0.06 0.08 0.1 Gain in dB Pout in Watts P1dB=14W Polyfet RF Devices TB-170 L8821P-->LK421 Pout vs Pin Freq=250MHz Vds=12.5Vdc Idq=1.2A 36 30.0 Linear @7W 30 29.0 Pout 24 28.0 Gain in dB Pout in Watts P1dB=16W 18 27.0 12 Gain Efficiency @15W= 37% 26.0 6 0 25.0 0 0.02 0.04 Pin in Watts Page 1 0.06 0.08 0.1 Polyfet RF Devices TB-170 L8821P-->LK421 Pout vs Pin Freq=512MHz Vds=12.5Vdc Idq=1.2A 27.0 21 18 Linear @5W Pout 26.0 15 12 25.0 9 6 Gain 24.0 Efficiency @15W= 44% 3 0 23.0 0 0.02 0.04 Pin in Watts Page 1 0.06 0.08 0.1 Gain in dB Pout in Watts P1dB=14W Polyfet RF Devices TB-170 L8821P--->LK421 Gain/Efficiency vs Freq; Vds=12.5Vdc Idq=1.2A 100 40 90 32 Gain 80 70 Pout fixed at 15W 60 Efficiency 16 50 40 8 30 0 20 0 100 200 300 Freq in MHz Page 1 400 500 Eff in % Gain in dB 24 9 .1 p F 470pF 11 p F 2 2 A W G c o il D = 0 .0 8 5 " 2 tu rn R F in p u t 3 .9 10K 75 12pF 10K PO T 6 .2 p F 7 .5 V Z e n e r D io d e 1K 200 10nF L8821P 10nF 22 22 AW G 11 p F 1 2 5 m u fe rrite b in o c u la r U T 3 4 -5 0 2 in . 5 .1 p F 2 2 A W G D = 0 .0 8 5 " 1 /2 tu rn 7 .5 p F 470pF tra c e 11 p F 7 .5 V Z e n e r D io d e 1nF 5 .1 p F 15 10nF 15 18 5/29/02 5/29/02 8/16/02 J Citrolo Cunningham 1nF 1nF 18AW G e le c t. U T 8 5 -5 0 2 .5 in . 1 2 5 m u fe rrite b in o c u la r 10K 25V 47uF 5 .1 p F L8821P-->LK421 Vds=12.5Vdc Idq=1.2A TB 170 30-512Mhz 15W P1dB U T 3 4 -1 0 2 .5 in . 1 2 5 m u fe rrite b in o c u la r 8/16/02 10nF 10nF U T 3 4 -1 0 2 .5 in . 1 2 5 m u fe rrite b in o c u la r 1nF Cunningham 100 LK421 100 10nF 47pF J Citrolo 10nF U T 3 4 -1 0 1 .5 in . 1 2 5 m u fe rrite b in o c u la r 10K 10K PO T 1nF 1K 10nF 8 5 0 m u to ro id , 1 8 A W G 1 2 tu rn s R F o u tp u t + 1 2 .5 V D C