MLCQ02 - Polyfet

polyfet rf devices
MLCQ02
Power RF Amplifiers
Power = 40.0 Watts
Bandwidth =
20 to 512 Mhz
Gain = 37.0 dB
Vdd = 28.0 Volts
50 ohms Input/Output Impedance
Description
The MLCQ02 is a 40 Watt, high gain
amplifier module covering a bandwidth of
20-512 Mhz. This compact module design is
suitable for military applications in a rugged
environment. An ALC pin is provided to
control the output power, gain and blanking of
the module.
Absolute Maximum Ratings (T=25 oC)
Parameter
DC supply Voltage 1
DC supply Voltage 2
AGC Voltage
Symbol
VDD1
VDD2
VAGC
Value
AGC Current
VAGCI
2.50
Input Power
Output Power
Operating Case Temp.
Storage Temperature
Pin
Pout
Tc
Tstg
32.0
8.5
0.025
60.0
-40 to +85
-55 to +100
Unit
V
V
V
mA
W
W
o
C
oC
Electrical Characteristics: ( T=25 oC Zs=Zl=50 ohms, Vdd = 28.0 Volts, Idq = 1.4 Amps )
Parameter
Frequency Range
Outut Power
Power Gain
Total Efficiency
2nd Harmonics
Intermod - 2 tone
Load Mismatch Tolerance
Vagc Voltage
Symbol
BW
Po
PG
Pulse Responese Time
Pr
Min
Max
512
40.0
37.0
h
dso
Im3
VSWR
VAGC
Typical
20
30
-30.00
-15.00
10:1
8.0
40.0
Unit
Test Conditions
Mhz
50 ohm load
Watts Pin = 10.0 dbm Vagc = 8.0 V
dB
Pout = 40.0 Watts Vagc = 8.0 V
Pout = 40.0 Watts
%
Pout = 40.0 Watts @
dBc
Mhz
dBc
AvePwr= 20.0 Watts
Relative All Phase Angles Pout = 40.0 Watts
V
Pin = 10.0 dBm, Pout = 40.0 W
uS
POLYFET RF DEVICES
Pulse source: RFin
REVISION
05/12/2010
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com
MLCQ02
Pout/Gain vs Pin: Freq=20MHz, Vds=28V, Vagc=8V, Idq=1.4A
80.00
Pout/Gain vs Pin: Freq=250MHz, Vds=28V, Vagc=8V, Idq=1.4A
70.00
44.00
70.00
43.00
60.00
42.00
42.00
60.00
40.00
40.00
38.00
Pout
30.00
36.00
41.00
40.00
39.00
30.00
38.00
20.00
37.00
Pout
20.00
36.00
10.00
0.00
34.00
10.00
32.00
0.00
35.00
34.00
15.85
7.94
3.98
2.00
1.00
0.50
0.25
0.13
0.06
15.85
7.94
3.98
2.00
1.00
0.50
0.25
0.13
0.06
Pin in mW
Pin in mW
Pout/Gain vs Pin: Freq=512MHz, Vds=28V, Vagc=8V, Idq=1.4A
Pout/Gain/Eff vs Vgs: Vds=28V, Pin=10dBm, Freq=20MHz
50
41.00
60.00
30.00%
40
37.00
Pout
36.00
20.00
35.00
10.00
34.00
0.00
25.00%
35
30
20.00%
25
15.00%
20
15
Efficeincy
Gain
30.00
Gain in dB
38.00
Pout in W & Gain in dB
39.00
40.00
35.00%
45
40.00
50.00
Pout in Watts
40.00
Gain
Gain in dB
Gain
50.00
Pout in Watts
50.00
Gain in dB
Pout in Watts
44.00
Pout
Gain
Efficeincy
10.00%
10
5.00%
33.00
15.85
7.94
3.98
2.00
1.00
0.50
0.25
0.13
0.06
5
0
0.00%
8
7.5
7
6.5
6
5.5
5
Pin in mW
Vgs in V
Pout/Gain/Eff vs Vgs: Vds=28V, Pin=10dBm, Freq=512MHz
Pout/Gain/Eff vs Vgs: Vds=28V, Pin=10dBm, Freq=250MHz
60
25.00%
50
50
20.00%
15.00%
30
10.00%
20
10
30.00%
25.00%
40
20.00%
30
15.00%
Pout
Gain
Efficeincy
20
10.00%
0.00%
8
7.5
8
7.5
7
6.5
6
5.5
5
7
0
6.5
0.00%
5.00%
6
10
5.5
5.00%
5
0
Pout
Gain
Efficeincy
35.00%
Efficeincy
40
Efficeincy
Pout in W & Gain in dB
60
30.00%
Pout in W & Gain in dB
70
Vgs in V
Vgs in V
POLYFET RF DEVICES
REVISION 05/12/2010
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com
MLCQ02
Gain/Eff vs Freq: Vds=28V,Vagc=8V, Idq=1.4APout=40W
46.0
P1dBvsFreq: Vds=28V,Vagc=8V,Idq=1.4A
60.00
45.0%
45.0
42.0
50.00
35.0%
40.00
30.0%
41.0
25.0%
40.0
Eff in %
Gain in dB
43.0
40.0%
P1dB in W
Efficiency
44.0
30.00
P1dB
20.00
39.0
20.0%
10.00
38.0
15.0%
Gain
37.0
0.00
36.0
10.0%
20
100
200
300
400
20
510
50
100
150
200
250
300
350
400
450
510
FrequencyinMHz
Frequency in MHz
IMD vs Freq: Vds=28V, Vagc=8V, Idq=1.40A, PEP=40W
Harmvs Freq: Vds=28V, Vagc=8, Idq=1.4A, Pout=40W
-10.0
0.0
-15.0
-10.0
-25.0
2nd
-30.0
3rd
IMD in dBc
Harm Atten in dBc
-20.0
-20.0
IM3
-30.0
IM5
-35.0
-40.0
-40.0
-50.0
-45.0
-60.0
-50.0
20
50
100
150
200
250
300
350
400
450
510
20
50
100
150
200
250
300
350
400
450
510
Frequency in MHz
Frequency in MHz
POLYFET RF DEVICES
REVISION 05/12/2010
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com