polyfet rf devices MHCV01 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 20 to 1000 Mhz Gain = 30.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MHCV01 is a 10 Watt, high gain amplifier module covering a bandwidth of 20-1000 Mhz. This compact module design is suitable for military applications in a rugged environment. An ALC pin is provided to control the output power, gain and blanking of the module. Absolute Maximum Ratings (T=25 oC) Parameter DC supply Voltage 1 DC supply Voltage 2 AGC Voltage Symbol VDD1 VDD2 VAGC Value AGC Current VAGCI 1.00 Input Power Output Power Operating Case Temp. Storage Temperature Pin Pout Tc Tstg 0.050 25.0 32.0 10.0 -40 to +85 -45 to +100 Unit V V V mA W W o C oC Electrical Characteristics: ( T=25 oC Zs=Zl=50 ohms, Vdd = 28.0 Volts, Idq = 2.2 Amps ) Parameter Frequency Range Outut Power Power Gain Total Efficiency 2nd Harmonics Intermod - 2 tone Load Mismatch Tolerance Vagc Voltage Symbol BW Po PG Pulse Responese Time Pr Min Max 1000 10.0 30.0 h dso Im3 VSWR VAGC Typical 20 15 -30.00 -25.00 10:1 8.0 100.0 Unit Test Conditions Mhz 50 ohm load Watts Pin = 10.0 dbm Vagc = 8.0 V dB Pout = 10.0 Watts Vagc = 8.0 V Pout = 10.0 Watts % Pout = 10.0 Watts @ dBc Mhz dBc AvePwr= 5.0 Watts Relative All Phase Angles V Pin = 10.0 dBm, Pout =10.0 W uS POLYFET RF DEVICES Pulse source: Vagc REVISION 02/11/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MHCV01 MHCV01 Pout/Gain vs Pin, Freq=20MHz, Vds=28V, Vagc=8V, Idq=2.2A MHCV01 Pout/Gain vs Pin, Freq=500MHz, Vds=28V, Vagc=8V, Idq=2.2A 35.00 37.00 30.00 36.00 25.00 34.00 20.00 Pout 33.00 10.00 32.00 5.00 31.00 Pout in Watts 34.00 Gain 30.00 15.00 28.00 10.00 Gain in dB 20.00 15.00 32.00 35.00 Gain Gain in dB Pout in Watts 25.00 Pout 26.00 5.00 0.00 30.00 0.3 0.4 0.6 1.0 1.6 2.5 4.0 6.3 10.0 0.00 15.8 25.1 22.00 0.3 0.4 0.6 1.0 1.6 2.5 4.0 6.3 10.0 15.8 25.1 39.8 63.1 100.0 Pin in mW MHCV01 Pout/Gain vs Pin, Freq=1000MHz, Vds=28V, Vagc=8V, Idq=2.2A MHCV01 Pout/Gain/Eff vs. Vgs, Vds=28V, Pin=20mW, Freq=20MHz 30.00 37.00 25.00 35.00 33.00 Gain Pout 29.00 10.00 27.00 5.00 0.00 35 40.00% 30 35.00% 30.00% 25 25.00% 20 20.00% 15 15.00% 10 25.00 5 23.00 0 0.3 0.4 0.6 1.0 1.6 2.5 4.0 6.3 10.0 15.8 25.1 39.8 63.1 100.0 Pout Gain Efficeincy 10.00% 5.00% 0.00% 4 4.5 5 5.5 Pin in mW 6 6.5 7 7.5 8 Vgs in V MHCV01 Pout/Gain/Eff vs. Vgs, Vds=28V, Pin=20mW, Freq=1GHz MHCV01 Pout/Gain/Eff vs. Vgs, Vds=28V, Pin=20mW, Freq=500MHz 35 25.00% 35 20.00% 18.00% 30 30 20.00% 25 14.00% 15 8.00% 6.00% 10 Pout Gain Efficeincy 25 15.00% 20 15 10.00% Efficeincy 10.00% Efficeincy 12.00% 20 Pout in W & Gain in dB 16.00% Pout in W & Gain in dB Efficeincy 15.00 Gain in dB 31.00 Pout in W & Gain in dB Pin in mW 20.00 Pout in Watts 24.00 Pout Gain Efficeincy 10 5.00% 4.00% 5 5 2.00% 0 0.00% 4 4.5 5 5.5 6 6.5 7 7.5 8 0 0.00% 4 4.5 5 5.5 6 6.5 7 7.5 8 Vgs in V Vgs in V POLYFET RF DEVICES REVISION 02/11/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MHCV01 MHCV01 P1dBvsFreq, Vds=28V, Vagc=8V, Idq=2.2A MHCV01 Gain/Eff vs Freq, Vds=28V,Vagc=8V, Idq=2.2A Pout=10W 18.00 39.0 20.0% 16.00 37.0 19.0% 18.0% 35.0 P1dB Gain in dB 12.00 17.0% Gain 33.0 16.0% Efficiency 31.0 Eff in % P1dB in W 14.00 15.0% 10.00 29.0 14.0% 8.00 27.0 6.00 13.0% 25.0 20 100 200 300 400 500 600 700 800 900 1000 12.0% 20 100 200 300 Frequency in MHz 500 600 700 800 900 1000 Frequency in MHz MHCV01 IMD vs Freq, Vds=28V, Vagc=8V, Idq=2.2A, PEP=10W MHCV01 Harm vs Freq, Vds=28V, Vagc=8, Idq=2.2A, Pout=10W 0.0 -10.0 -10.0 -20.0 -20.0 -30.0 2nd -30.0 3rd IMD in dBc Harm Atten in dBc 400 IM3 -40.0 -40.0 -50.0 -50.0 -60.0 IM5 -70.0 -60.0 20 100 200 300 400 500 600 700 800 900 1000 20 100 200 300 400 500 600 700 800 900 1000 Frequency in MHz Frequency in MHz POLYFET RF DEVICES REVISION 02/11/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com