polyfet rf devices MLCQ03 Power RF Amplifiers Power = 60.0 Watts Bandwidth = 20 to 512 Mhz Gain = 37.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MLCQ03 is a 60 Watt, high gain amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is suitable for military applications in a rugged environment. An ALC pin is provided to control the output power, gain and blanking of the module. Absolute Maximum Ratings (T=25 oC) Parameter DC supply Voltage 1 DC supply Voltage 2 AGC Voltage Symbol VDD1 VDD2 VAGC Value AGC Current VAGCI 2.50 Input Power Output Power Operating Case Temp. Storage Temperature Pin Pout Tc Tstg 32.0 8.5 0.010 75.0 -40 to +85 -55 to +100 Unit V V V mA W W o C oC Electrical Characteristics: ( T=25 oC Zs=Zl=50 ohms, Vdd = 28.0 Volts, Idq = 1.4 Amps ) Parameter Frequency Range Outut Power Power Gain Total Efficiency 2nd Harmonics Intermod - 2 tone Load Mismatch Tolerance Vagc Voltage Symbol BW Po PG Pulse Responese Time Pr Min Max 512 60.0 37.0 h dso Im3 VSWR VAGC Typical 20 25 -30.00 -15.00 10:1 8.0 40.0 Unit Test Conditions Mhz 50 ohm load Watts Pin = 10.0 dbm Vagc = 8.0 V dB Pout = 60.0 Watts Vagc = 8.0 V Pout = 60.0 Watts % Pout = 60.0 Watts @ dBc Mhz dBc AvePwr= 30.0 Watts Relative All Phase Angles Pout = 60.0 Watts V Pin = 10.0 dBm, Pout = 60.0 W uS POLYFET RF DEVICES Pulse source: RFin REVISION 05/12/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MLCQ03 Pout/Gain vs Pin: Freq=20MHz, Vds=28V, Vagc=8V, Idq=1.4A 90.00 Pout/Gain vs Pin: Freq=250MHz, Vds=28V, Vagc=8V, Idq=1.4A 42.00 80.00 41.50 43.50 90.00 43.30 80.00 70.00 43.10 41.00 Gain 30.00 40.00 70.00 42.90 60.00 42.70 50.00 42.50 40.00 42.30 Pout 30.00 20.00 Gain in dB 40.50 Pout 40.00 Gain in dB 50.00 Pout in Watts Gain 60.00 Pout in Watts 100.00 42.10 20.00 41.90 10.00 41.70 0.00 41.50 39.50 10.00 0.00 39.00 Pin in mW Pout/Gain vs Pin: Freq=512MHz, Vds=28V, Vagc=8V, Idq=1.4A Pout/Gain/Eff vs. Vgs: Vds=28V, Pin=6dBm, Freq=20MHz 35.00% 45 43.00 90.00 40 80.00 30.00% 42.00 70.00 41.00 40.00 Pout 40.00 39.00 30.00 20.00 38.00 25.00% 30 25 20.00% 20 15.00% Efficeincy 50.00 Gain in dB Gain Pout in W & Gain in dB 35 60.00 Pout in Watts 6.31 5.01 3.98 3.16 2.51 2.00 1.58 1.26 1.00 0.79 0.63 0.50 0.40 0.32 0.25 10 7.94 6.31 5.01 3.98 3.16 2.51 2 1.58 1.26 1 0.79 0.63 0.5 0.4 0.32 Pin in mW Pout Gain Efficeincy 15 10.00% 10 10.00 0.00 37.00 5.00% 5 12.00 11.00 10.00 9.00 8.00 7.00 6.00 5.00 4.00 3.00 2.00 1.00 0.00 -1.00 -2.00 -3.00 -4.00 -5.00 0 0.00% 8 7.5 7 6.5 6 5.5 5 Pin in mW Vgs in V Pout/Gain/Eff vs. Vgs: Vds=28V, Pin=6dBm, Freq=512MHz 40.00% 60 35.00% 60 35.00% 30.00% 50 20.00% 30 15.00% 20 Pout Gain Efficeincy 30.00% 40 25.00% 30 20.00% Efficeincy 25.00% 40 40.00% 50 Pout in W & Gain in dB 70 Efficeincy Pout in W & Gain in dB Pout/Gain/Eff vs. Vgs: Vds=28V, Pin=6dBm, Freq=250MHz Pout Gain Efficeincy 15.00% 20 10.00% 10.00% 10 0 0.00% 8 7.5 7 8 7.5 7 6.5 6 5.5 5 6.5 0.00% 6 0 5.00% 5.5 5.00% 5 10 Vgs in V Vgs in V POLYFET RF DEVICES REVISION 05/12/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MLCQ03 Gain/Eff vs Freq: Vds=28V,Vagc=8V, Idq=1.4APout=60W 46.0 P1dBvsFreq: Vds=28V,Vagc=8V,Idq=1.4A 60 45.0% 45.0 Gain 40.0% 50 35.0% 40 42.0 30.0% 41.0 25.0% 40.0 Eff in % Gain in dB 43.0 P1dB in W 44.0 30 P1dB 20 39.0 20.0% Efficiency 38.0 10 15.0% 37.0 0 36.0 10.0% 20 100 200 300 400 20 510 50 100 150 200 250 300 350 400 450 510 FrequencyinMHz Frequency in MHz IMD vs Freq: Vds=28V, Vagc=8V, Idq=1.40A, PEP=60W Harmvs Freq: Vds=28V, Vagc=8, Idq=1.4A, Pout=60W -10.0 0.0 -5.0 -15.0 -15.0 -20.0 2nd -25.0 3rd -30.0 IMD in dBc Harm Atten in dBc -10.0 -20.0 IM3 IM5 -25.0 -35.0 -30.0 -40.0 -45.0 -50.0 -35.0 20 50 100 150 200 250 300 350 400 450 510 20 50 100 150 200 250 300 350 400 450 510 Frequency in MHz Frequency in MHz POLYFET RF DEVICES REVISION 05/12/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com