MKAL02 - Polyfet

polyfet rf devices
MKAL02
Power RF Amplifiers
Power = 100.0 Watts
Bandwidth =
2 to 100 Mhz
Gain = 50.0 dB
Vdd = 28.0 Volts
50 ohms Input/Output Impedance
Description
The MKAL02 is a 100 Watt, high gain
amplifier module covering a bandwidth of
2-100 Mhz. This compact module design is
suitable for military applications in a rugged
environment. An ALC pin is provided to
control the output power, gain and blanking of
the module.
Absolute Maximum Ratings (T=25 oC)
Parameter
DC supply Voltage 1
DC supply Voltage 2
AGC Voltage
Symbol
VDD1
VDD2
VAGC
Value
AGC Current
VAGCI
1.00
Input Power
Output Power
Operating Case Temp.
Storage Temperature
Pin
Pout
Tc
Tstg
32.0
9.0
0.002
120.0
-40 to +85
-55 to +100
Unit
V
V
V
mA
W
W
o
C
oC
Electrical Characteristics: ( T=25 oC Zs=Zl=50 ohms, Vdd = 28.0 Volts, Idq = 1.4 Amps )
Parameter
Frequency Range
Outut Power
Power Gain
Total Efficiency
2nd Harmonics
Intermod - 2 tone
Load Mismatch Tolerance
Vagc Voltage
Symbol
BW
Po
PG
Pulse Responese Time
Pr
Min
Max
100
100.0
50.0
h
dso
Im3
VSWR
VAGC
Typical
2
50
-30.00
-15.00
10:1
8.0
100.0
Unit
Test Conditions
Mhz
50 ohm load
Watts Pin = 0.0 dbm Vagc = 8.0 V
dB
Pout =100.0 Watts Vagc = 8.0 V
Pout =100.0 Watts
%
Pout =100.0 Watts @
dBc
Mhz
dBc
AvePwr= 50.0 Watts
Relative All Phase Angles Pout =100.0 Watts
0.0 dBm, Pout = 100.0 W
V
Pin =
uS
POLYFET RF DEVICES
Pulse source: Vagc
REVISION
04/05/2011
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com
MKAL02
Pout/Gain vs Pin: Freq=1.6MHz, Vds=28V, Vagc=8V, Idq=1.4A
Pout/Gain vs Pin: Freq=50MHz, Vds=28V, Vagc=8V, Idq=1.4A
120
120
60
59
100
100
57
57
54
Gain
40
Pout
40
60
Gain
Gain in dB
51
Gain in dB
53
60
Pout in Watts
55
80
Pout in Watts
80
Pout
49
51
20
20
47
0
0.03
0.08
0.13
0.20
0.32
Pin in mW
0.50
0
0.03
45
1.26
0.79
0.08
0.13
0.20
0.32
0.50
0.79
48
1.26
Pin in mW
Pout/Gain/Eff vs Vgs: Freq=1.6Mhz, Vds=28V, Pin=2dBm
Pout/Gain vs Pin: Freq=100MHz, Vds=28V, Vagc=8V, Idq=1.4A
120
60
100
120
60%
100
50%
80
40%
60
30%
40
20%
20
10%
Pout in Watts
54
Pout
40
Gain
Efficeincy
Gain in dB
60
Pout in W & Gain in dB
57
80
Pout
Gain
Efficeincy
51
20
0
0.03
0
4.5
48
0.08
0.13
0.20
0.32
0.50
0.79
1.26
0%
5
5.5
6
6.5
7
7.5
8
Vgs in V
Pin in mW
Pout/Gain/Eff vs Vgs: Freq=100MHz, Vds=28V, Pin=2dBm
Pout/Gain/Eff vs Vgs: Freq=50MHz, Vds=28V, Pin=2dBm
120
70%
120
100
60%
100
80%
70%
30%
40
20%
Gain
Efficeincy
Pout in W & Gain in dB
60
Pout
80
50%
40%
60
Efficeincy
40%
Efficeincy
Pout in W & Gain in dB
60%
50%
80
Pout
Gain
Efficeincy
30%
40
20%
20
0
4.5
10%
0%
5
5.5
6
6.5
7
7.5
8
20
10%
0
4.5
0%
5
5.5
Vgs in V
POLYFET RF DEVICES
6
6.5
Vgs in V
7
7.5
8
REVISION 04/05/2011
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com
MKAL02
Gain/Eff vs Freq: Vds=28V, Vagc=8V, Idq=1.4A, Pout=100W
P1dB vs Freq: Vds=28V, Vagc=8V, Idq=1.4A
100%
60
66
58
90%
56
56
80%
54
Gain in dB
36
52
Gain
70%
50
60%
48
Eff in %
P1dB in W
46
26
46
50%
Efficiency
44
16
40%
42
6
1.6
5
10
20
30
40
50
60
70
80
90
40
1.6
100
5
10
20
Frequency in MHz
30
40
50
60
70
80
30%
100
90
Frequency in MHz
IMD vs Freq: Vds=28V, Vagc=8V, Idq=1.4A, PEP=100W
100kHz seperation
Harm vs Freq: Vds=28V, Vagc=8V, Idq=1.4A, Pout=100W
5
-15.0
0
-5
-20.0
-15
-25.0
-20
2nd
3rd
-25
IMD in dBc
Harm Atten in dBc
-10
IM3
IM5
-30.0
-30
-35
-35.0
-40
-45
-40.0
1.6
10
20
30
40
50
60
70
80
90
100
1.6
10
20
Frequency in MHz
30
40
50
60
70
80
90
100
Frequency in MHz
POLYFET RF DEVICES
REVISION 04/05/2011
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com