2SA893A Silicon PNP Epitaxial REJ03G0632-0200 (Previous ADE-208-1002) Rev.2.00 Aug.10.2005 Application • Low frequency high voltage amplifier • Complementary pair with 2SC1890A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 4 Symbol VCBO VCEO VEBO IC PC Tj Ratings –120 –120 –5 –50 300 150 Unit V V V mA mW °C Tstg –55 to +150 °C 2SA893A Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current DC current transfer ratio hFE*1 Min –120 — — 250 Base to emitter voltage VBE — — –0.75 V VCE = –12 V, IC = –2 mA VCE(sat) — — –0.5 V IC = –10 mA, IB = –1 mA fT — 120 — MHz VCE = –12 V, IC = –2 mA Collector output capacitance Cob — 1.8 — pF VCB = –25 V, IE = 0, f = 1 MHz Noise figure NF — 2 10 dB VCE = –6 V, IC = –50 µA Rg = 50 kΩ, f = 1 kHz Collector to emitter saturation voltage Gain bandwidth product Note: Symbol V(BR)CEO ICBO 1. The 2SA893A is grouped by hFE as follows. D E 250 to 500 400 to 800 Rev.2.00 Aug 10, 2005 page 2 of 4 Typ — — — — Max — — –0.5 800 Unit V µA µA Test conditions IC = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCB = –100 V, IE = 0 VCE = –12 V, IC = –2 mA 2SA893A Main Characteristics Typical Output Characteristics 300 –8 –4 –6 –4 –2 100 50 150 –2 µA –10 0 DC Current Transfer Ratio hFE –3 VCE = –12 V –1.0 –0.3 Ta =100 C 75 50 25 0 –25 –0.1 –0.03 –0.01 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 800 Ta = 100°C 75 50 25 0 –25 600 400 200 0 –0.01 –0.03 300 100 30 10 –10 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 4 –0.3 –1.0 –3 Collector Output Capacitance vs. Collector to Base Voltage –30 Collector Output Capacitance Cob (pF) VCE = –12 V –3 –0.1 Collector Current IC (mA) 1,000 –1.0 –50 VCE = –12 V Gain Bandwidth Product vs. Collector Current –0.3 –40 1,000 Base to Emitter Voltage VBE (V) –0.1 –30 DC Current Transfer Ratio vs. Collector Current –10 5 –0.01 –0.03 –20 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector Current IC (mA) W –10 –6 IB = 0 0 Ambient Temperature Ta (°C) Gain Bandwidth Product fT (MHz) m 100 –8 0 30 200 2 –2 – 2 0 8 –1 –16 –14 –12 = Collector Current IC (mA) –10 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 50 20 IE = 0 f = 1 MHz 10 5 2 1.0 0.5 –1 –3 –10 –30 –100 Collector to Base Voltage VCB (V) –10 –30 2SA893A Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA893ADTZ 2SA893AETZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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