Model # AP10D10N Rad-Hard Solid State SPDT Relay with Buffered Inputs 100 V, 10 Amp SSR is Manufactured in a Certified Class-K Facility Features • Industry’s First Rad-Hard Single Pole, Double Throw (SPDT) SSR • 100 V Breakdown Voltage • 10 Amp Design • Neutron Fluence Level >1.8E12 n/cm2 • Optically Coupled • Total Dose Capability >100 Krad (Si) • >1,000 VDC Input to Output Isolation • Buffered Input Stage • 3.3 V Compatible Logic Level Input • Hermetically Sealed Package Description The AP10D10N is a radiation hardened SPDT solid-state relay in a hermetic package. It is configured as a set of two independently actuated contacts, one being normally open and the other being normally closed (See Figure 3.). When actuated together, they perform the function of a single-pole-double-throw relay. The timing of these contacts (i.e. makebefore- break or break-before-make) is not controlled on this part number. For product with timing control, please see the AP10D10MM through AP10D10BB datasheets per Table 5. This device is characterized for >100 Krad (Si) total ionizing dose, and neutron fluence level of >1.8E12 n/cm2. The output FETs utilize advanced technology, and the device is actuated by standard inputs (i.e. 3.3 V and higher logic levels). Table 1 – Absolute Maximum Ratings (Tc = +25oC Unless Otherwise Noted) (Exceeding maximum ratings may damage the device.) Symbol Parameters / Test Conditions (Notes Page 3) Value Unit VS Output Voltage (5) 100 V IO Output Current (4) (5) 12 A VIN Input Buffer Voltage (Pin 4 & 6) (3) ± 7.0 V VIN Input Buffer Current ± 10 mA VDD Input Supply Voltage (Pin 5) (7) 10 V IDD Input Supply Current (7) 25 mA PDISS Power Dissipation (4) (5) 73 W TJ Operating Temperature Range -55 to +125 oC TS Storage Temperature Range -65 to +150 oC TL Lead Temperature 300 oC Rev Date: 12/11/2014 © API Technologies Corp. Proprietary Information Page # 1 | www.apitech.com | micro.apitech.com | +1.888.553.7531 | [email protected] Model # AP10D10N Table 2 – General Characteristics per Channel @ -55°C < TC < +125°C (Unless Otherwise Specified) Group A Subgroups Test Conditions Symbol Min. Typ. Max. Units -- VDD = 5.0V, IO = 10A VIN(TH) - -- 3.0 V Input-to-Output Leakage Current (1) -- VI-O = 1.0KVdc, dwell = 5.0s TC = 25°C II-O -- -- 1.0 mA Output Capacitance (1) -- VIN = 0.1V, f = 1.0MHz, VS = 25V, TC = 25°C COSS -- 110 -- pF Thermal Resistance (1) -- VIN = 3.3V, VDD = 5.0V (1, 4) RTHJC -- -- 1.5 °C/W MTBF (Per Channel) -- MIL-HDBK-217F, SF@Tc= 25°C 6.0 -- -- MHrs Weight -- -- -- -- 25 grams Units Parameter Input Buffer Threshold Voltage (1) (3) W Table 3 – Pre-Irradiation Electrical Characteristics per Channel @ -55°C < TC < +125°C (Unless Otherwise Specified) Parameter Group A Subgroups Test Conditions 1 Output On-Resistance Output Leakage Current Symbol 2 VIN = 3.3V VDD = 5.0V, IO= 10A 1 VIN = 0.1V, VS = 200V 2 VIN = 0.1V, VS = 150V RDS(ON) IO VDD = 5.0V, IO= 10A Input Supply Current 1, 2, 3 VDD = 10V, IO= 10A (1, 7) IDD Min. Typ. Max. -- -- 0.10 -- -- 0.20 -- -- 25 -- -- 250 -- 10 15 -- -- 25 -- -- 1.0 2, 3 VIN = 3.3V IIN -- -- 3.0 Turn-On Delay (6) 1, 2, 3 VIN = 3.3V, VDD = 5.0V, VS = 50V RL = 5Ω, P.W. = 50ms ton -- -- TBD Turn-Off Delay (6) 1, 2, 3 VIN = 0.1V, VDD = 5.0V, VS = 50V RL = 5Ω, P.W. = 50ms toff -- -- TBD Rise Time (2) (6) 1, 2, 3 VIN = 3.3V, VDD = 5.0V, VS = 50V RL = 5Ω, P.W. = 50ms tr -- -- TBD Fall Time (2) (6) 1, 2, 3 VIN = 0.1V, VDD = 5.0V, VS = 50V RL = 5Ω, P.W. = 50ms tf -- -- TBD 1 Input Buffer Current uA mA mA mS Rev Date: 12/11/2014 © API Technologies Corp. Proprietary Information Ohms Page # 2 | www.apitech.com | micro.apitech.com | +1.888.553.7531 | [email protected] Model # AP10D10N Table 4 – Post Total Dose Irradiation (8, 9) Electrical Characteristics per Channel @ 25°C (unless otherwise specified) Group A Subgroups Test Conditions Symbol Output On-Resistance 1 VIN = 3.3V, VDD = 5.0V, IO= 10A RDS(ON) Input Supply Current 1 VIN = 3.3V, VDD = 5.0V, IO= 10A IDD Output Leakage Current 1 VIN = 0.1V, VS = 100V IO 25 Input Buffer Current 1 VIN = 3.3V IIN 1.0 Turn-On Delay (6) 1 VIN = 3.3V, VDD = 5.0V, VS = 50V RL = 5W, PW = 50ms ton TBD 1 VIN = 0.1V, VDD = 5.0V, VS = 50V RL = 5W, PW = 50ms toff TBD Rise Time (2) (6) 1 VIN = 3.3V, VDD = 5.0V, VS = 50V RL = 5W, P.W. = 50ms tr TBD (2) (6) 1 VIN = 0.1V, VDD = 5.0V, VS = 50V RL = 5W, P.W. = 50ms tf TBD Parameter Turn-Off Delay Fall Time (6) Min. Typ. 10 Max. Units 0.10 Ohms 15 mA mA ms Notes for Maximum Ratings and Electrical Characteristic Tables 1. 2. 3. 4. 5. 6. 7. 8. 9. Specification is guaranteed by design. Rise and fall times are controlled internally. Inputs protected for VIN < 1.0V and VIN > 7.0V. Optically coupled Solid State Relays (in reality, a FET with isolated Gate drive) have relatively slow turn on and turn off times. Care must be taken to insure that transient currents during these times do not cause violation of SOA limits for the particular switch used. If transient conditions are present, we recommend that a complete simulation be performed by the end user to insure compliance with SOA requirements as specified in the data sheet of the applicable switching transistor. While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for product derating, as required for the application. Reference Figures 3 & 4 for Switching Test Circuits and Waveform; Output Voltage (VO) of Figure 4, Switching Test Waveform, is representative of the Output FET Drain-to-Source Voltage. Input Supply voltage shall not exceed 6 V @ T c > 70°C. Total Dose Irradiation takes place with an Input bias of 10mA applied and VDS = 80 V. API Technologies’ Marlborough Operations does not currently have a DLA certified Radiation Hardness Assurance Program. Radiation Performance API’s Radiation Hardened Solid State Relays are tested to verify their hardness capability. The hardness assurance program uses a Cobalt-60 (60 Co) Source and heavy ion irradiation. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparison. Rev Date: 12/11/2014 © API Technologies Corp. Proprietary Information Page # 3 | www.apitech.com | micro.apitech.com | +1.888.553.7531 | [email protected] Model # AP10D10N Table 5 - Ordering Information AP 10 D Breakdown Voltage 06 = 60 V 10 = 100 V 25 = 250 V 10 N Max Output Current 01 = 1 A 10 = 10 A 12 = 12 A Type C = Normally Closed N = Normally Open D = SPDT L = Latching -K -1 Screening Level K = Class-K Compliant H = Class-H Compliant E = Engineering Model Lead Bend Options 1 = No Bend 2 = Surface Mount 3 = Pkg with backtab, no leadbend 4 = Pkg with backtab, SMT leadbend Series A = First Series N = No set timing MM = Make/Make MB = Make/Break BM = Break/Make BB = Break/Break Table 6 - Screening Options Screening Levels Tests Mil-Std-883Method H K Compliant- MIL-PRF-38534 100 % Non-Destruct Wire-Pull Sample 100% 2023 Pre-Cap Visual N/A 100% 2017 Temperature Cycle 100% 100% 1010 Constant Acceleration 100% 100% 2001 PIND N/A 100% 2020 Pre-Burn-In Electrical (Ta= 25C) 100% 100% Burn-In 100% (240 Hours) 100% (320 Hours) 1015 Final Electrical 100% 100% (6) Hermeticity (Fine & Gross Leak) 100% 100% 1014 X-Ray (5) N/A 100% 2012 External Visual 100% 100% 2009 Rev Date: 12/11/2014 © API Technologies Corp. Proprietary Information Page # 4 | www.apitech.com | micro.apitech.com | +1.888.553.7531 | [email protected] Model # AP10D10N Figure 1 – Maximum Drain Current vs. Case Temperature per Channel Figure 2 – Functional Block Diagram Rev Date: 12/11/2014 © API Technologies Corp. Proprietary Information Page # 5 | www.apitech.com | micro.apitech.com | +1.888.553.7531 | [email protected] Model # AP10D10N Figure 3 – Switching Test Circuit Figure 4 – Switching Test Waveform Rev Date: 12/11/2014 © API Technologies Corp. Proprietary Information Page # 6 | www.apitech.com | micro.apitech.com | +1.888.553.7531 | [email protected] Model # AP10D10N Figure 5 – 8-Pin Package, Dimensions with SMT Lead Bend Figure 6 – 8-Pin Package, Dimensions with No Lead Bend Rev Date: 12/11/2014 © API Technologies Corp. Proprietary Information Page # 7 | www.apitech.com | micro.apitech.com | +1.888.553.7531 | [email protected] Model # AP10D10N Figure 7 – 8-Pin Tabbed Package, Dimensions with SMT Lead Bend Figure 8 – 8-Pin Tabbed Package, Dimensions with no Lead Bend Rev Date: 12/11/2014 © API Technologies Corp. Proprietary Information Page # 8 | www.apitech.com | micro.apitech.com | +1.888.553.7531 | [email protected] Model # AP10D10N Table 7 – Pin Designations Pin # Pin Description 1 OUT 1 + 2 OUT 1 - 3 INPUT GND 4 INPUT 1 5 VDD (+5V) 6 INPUT 2 7 OUT 2 - 8 OUT 2 + Case Outline Notes 1.- Dimensioning and Telebanking per ASME Y14.53M-1994 2.- Controlling Dimension: Inch 3.- Dimensions are shown in inches 4.- Tolerances are +/-0.005 UOS 5.- Lead Dimensions are prior to Hot Solder Dip (if used) 6.- Lead finish per MIL-PRF-38534, Finish A, hot solder dip (Sn 63/Pb37) only on SMT lead bend option. 7.- For no leadbend, leads exit package as above and extend out 0.5” minimum. Rev Date: 12/11/2014 © API Technologies Corp. Proprietary Information Page # 9 | www.apitech.com | micro.apitech.com | +1.888.553.7531 | [email protected]