NCE60R180,NCE60R180F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 mΩ gate charge. This super junction MOSFET fits the industry’s ID 21 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS) Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE60R180 TO-220 NCE60R180 NCE60R180F TO-220F NCE60R180F TO-220 Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V) VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C ID (DC) (Note 1) IDM (pluse) Pulsed drain current Maximum Power Dissipation(Tc=25℃) PD TO-220F Table 1. Derate above 25°C (Note 2) Single pulse avalanche energy (Note 1) Avalanche current Repetitive Avalanche energy ,tAR limited by Tjmax (Note 1) Wuxi NCE Power Semiconductor Co., Ltd Page 1 NCE60R180 NCE60R180F Unit 600 V ±30 V 21 21* A 13.2 13.2* A 63 63* A 200 34 W 1.6 0.27 W/°C EAS 690 mJ IAR 7 A EAR 1 mJ http://www.ncepower.com v1.0 NCE60R180,NCE60R180F Parameter Symbol dv/dt Drain Source voltage slope, VDS ≤480 V, 50 Unit V/ns dv/dt 15 V/ns TJ,TSTG -55...+150 °C Reverse diode dv/dt,VDS ≤480 V,ISD<ID Operating Junction and Storage Temperature Range NCE60R180 NCE60R180F * limited by maximum junction temperature Table 2. Thermal Characteristic Parameter Symbol NCE60R180 NCE60R180F Unit Thermal Resistance,Junction-to-Case(Maximum) RthJC 0.62 3.67 °C /W Thermal Resistance,Junction-to-Ambient (Maximum) RthJA 62.5 80 °C /W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=600V,VGS=0V Zero Gate Voltage Drain Current(Tc=125℃) IDSS Gate-Body Leakage Current 600 V 0.05 1 μA VDS=600V,VGS=0V 100 μA IGSS VGS=±30V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3 3.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10.5A 150 180 mΩ Forward Transconductance gFS VDS = 20V, ID = 10.5A 17.5 S Input Capacitance Clss 1950 PF Output Capacitance Coss 150 PF Reverse Transfer Capacitance Crss 5 PF Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Intrinsic gate resistance RG 2.5 Dynamic Characteristics VDS=50V,VGS=0V, F=1.0MHz VDS=480V,ID=21A, VGS=10V f = 1 MHz open drain 45 70 nC 9 nC 18 nC 1 Ω 11 nS nS Switching times Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=380V,ID=11A, 6 td(off) RG=4Ω,VGS=10V 61 100 nS 4.5 12 nS 21 A 63 A 1.3 V Turn-Off Delay Time Turn-Off Fall Time tf Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD Pulsed Source-drain current(Body Diode) ISDM Forward on voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm TC=25°C Tj=25°C,ISD=21A,VGS=0V Tj=25°C,IF=21A,di/dt=100A/μs 0.9 310 nS 5 uC 28 A Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω Wuxi NCE Power Semiconductor Co., Ltd Page 2 http://www.ncepower.com v1.0 NCE60R180,NCE60R180F TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area for TO-220 Figure2. Safe operating area for TO-220F Figure3. Source-Drain Diode Forward Voltage Figure5. Transfer characteristics Wuxi NCE Power Semiconductor Co., Ltd Figure4. Output characteristics Figure6. Static drain-source on resistance Page 3 http://www.ncepower.com v1.0 NCE60R180,NCE60R180F Figure7. RDS(ON) vs Junction Temperature Figure8. BVDSS vs Junction Temperature Figure9. Maximum ID vs Junction Temperature Figure11. Capacitance Wuxi NCE Power Semiconductor Co., Ltd Figure10. Gate charge waveforms Figure12. Transient Thermal Impedance for TO-220 Page 4 http://www.ncepower.com v1.0 NCE60R180,NCE60R180F Figure13. Transient Thermal Impedance for TO-220F Wuxi NCE Power Semiconductor Co., Ltd Page 5 http://www.ncepower.com v1.0 NCE60R180,NCE60R180F Test circuit 1)Gate charge test circuit & Waveform 2)Switch Time Test Circuit: 3)Unclamped Inductive Switching Test Circuit & Waveforms Wuxi NCE Power Semiconductor Co., Ltd Page 6 http://www.ncepower.com v1.0 NCE60R180,NCE60R180F TO-220-3L-C Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.400 4.600 0.173 0.181 A1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 D 9.910 10.250 0.390 0.404 E 8.9500 9.750 0.352 0.384 E1 12.650 12.950 0.498 0.510 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 F 2.650 2.950 0.104 0.116 H 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 L 12.900 13.400 0.508 0.528 L1 2.850 3.250 0.112 0.128 V Φ 7.500 REF. 3.400 Wuxi NCE Power Semiconductor Co., Ltd 0.295 REF. 3.800 Page 7 0.134 http://www.ncepower.com 0.150 v1.0 NCE60R180,NCE60R180F TO-220F Package Information Wuxi NCE Power Semiconductor Co., Ltd Page 8 http://www.ncepower.com v1.0 NCE60R180,NCE60R180F ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications. NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein. Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 9 http://www.ncepower.com v1.0