NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
NCE1012E
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1012E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 20V,ID =0.6A
Schematic diagram
RDS(ON) <350mΩ @ VGS=4.5V
RDS(ON) <500mΩ @ VGS=2.5V
● High power and current handing capability
● Lead free product is acquired
● Gate-Source ESD protection
Marking and pin assignment
Application
● Battery operated systems
● Load/ power switching cell phones pagers
● Power supply converter circuits
SOT-523 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
1012E
NCE1012E
SOT-523
Ø180mm
8 mm
3000units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
ID
0.6
A
IDM
1
A
PD
150
mW
TJ,TSTG
-55 To 150
℃
RθJA
833
℃/W
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
BVDSS
VGS=0V ID=250μA
20
22
-
V
Off Characteristics
Drain-Source Breakdown Voltage
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NCE1012E
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Parameter
Symbol
Condition
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
IDSS
VDS=16V,VGS=0V
-
0.3
100
nA
Gate-Body Leakage Current
IGSS
VGS=±4.5V,VDS=0V
-
-
±1
μA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.5
0.75
1.2
V
Drain-Source On-State Resistance
RDS(ON)
VGS=2.5V, ID=0.5A
-
310
500
mΩ
VGS=4.5V, ID=0.6A
-
210
350
mΩ
VDS=10V,ID=0.4A
-
1
-
S
-
60
-
pF
-
15
-
pF
-
5
-
pF
-
5
-
nS
-
5
-
nS
-
25
-
nS
-
11
-
nS
-
750
-
pC
-
75
-
pC
-
225
-
pC
-
0.75
1.2
V
-
-
0.6
A
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
V = 10 V, R = 47Ω
ID= 200 mA,
VGEN = 4.5 V, RG = 10Ω
VDS = 10 V, VGS = 4.5 V,
ID = 250 mA
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
VSD
IS
VGS=0V,IS=0.6A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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NCE1012E
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Typical Electrical and Thermal Characteristics
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
PD Power(W)
Rdson On-Resistance(mΩ)
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
ID- Drain Current (mA)
Figure 6 Drain-Source On-Resistance
ID- Drain Current (A)
Normalized On-Resistance
Figure 3 Power Dissipation
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
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Figure 8 Drain-Source On-Resistance
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Pb Free Product
NCE1012E
C Capacitance (pF)
ID- Drain Current (mA)
http://www.ncepower.com
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 8 Capacitance vs Vds
Rdson (mΩ)
Is- Reverse Drain Current (A)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Vds Drain-Source Voltage (V)
Figure 11 Gate Charge
Figure 13 Safe Operation Area
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NCE1012E
r(t),Normalized Effective
Transient Thermal Impedance
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Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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NCE1012E
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SOT-523 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
0.700
0.900
0.028
0.035
A1
0.000
0.100
0.000
0.004
A2
0.700
0.800
0.028
0.031
b1
0.150
0.250
0.006
0.010
b2
0.250
0.350
0.010
0.014
c
0.100
0.200
0.004
0.008
D
1.500
1.700
0.059
0.067
E
0.700
0.900
0.028
0.035
e
e1
0.500 TYP.
0.900
L
0.020 TYP.
1.100
0.035
0.400REF.
0.043
0.016REF.
L1
0.260
0.460
0.010
0.018
θ°
0°
8°
0°
8°
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Wuxi NCE Power Semiconductor Co., Ltd
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NCE1012E
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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