Pb Free Product NCE2011E http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features Schematic diagram ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired Marking and pin assignment ● Surface mount package Application ● PWM application ● Load switch TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2011E NCE2011E TSSOP-8 Ø330mm 12mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V ID 11 A IDM 44 A PD 1.6 W TJ,TSTG -55 To 150 ℃ RθJA 78 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - Wuxi NCE Power Semiconductor Co., Ltd Page 1 Typ Max Unit - V 1 μA Off Characteristics - v1.0 Pb Free Product NCE2011E http://www.ncepower.com Parameter Symbol Condition Min Typ Max Unit IGSS VGS=±10V,VDS=0V - - ±10 μA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.6 0.8 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=10A - 5.5 7 mΩ VGS=2.5V, ID=5.5A - 7 9 mΩ VDS=5V,ID=11A 25 - - S - 1710 - PF - 232 - PF - 200 - PF - 2.5 nS Gate-Body Leakage Current On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=10V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=10V,RL=1Ω - 7.2 nS td(off) VGS=10V,RGEN=3Ω - 49 nS - 10.8 nS - 17.5 nC - 1.5 - nC - 4.5 - nC - - 1.2 V - - 11 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=10A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD IS VGS=0V,IS=1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 Pb Free Product NCE2011E http://www.ncepower.com Typical Electrical and Thermal Characteristics Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID Drain Current (A) Figure 5 Output Characteristics Wuxi NCE Power Semiconductor Co., Ltd Figure 6 Drain-Source On-Resistance Page 3 v1.0 Pb Free Product NCE2011E ID- Drain Current (A) Normalized On-Resistance http://www.ncepower.com TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Wuxi NCE Power Semiconductor Co., Ltd Figure 12 Source- Drain Diode Forward Page 4 v1.0 Pb Free Product NCE2011E ID- Drain Current (A) http://www.ncepower.com Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 Pb Free Product NCE2011E http://www.ncepower.com Tssop-8 Package Information Symbol D E b c E1 A A2 A1 e L H Θ Wuxi NCE Power Semiconductor Co., Ltd Dimensions In Millimeters Min Max 2.900 3.100 4.300 4.500 0.190 0.300 0.090 0.200 6.250 6.550 1.100 0.800 1.000 0.020 0.150 0.65(BSC) 0.500 0.700 0.25(TYP) 1° 7° Page 6 v1.0 Pb Free Product http://www.ncepower.com NCE2011E Attention: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.0