NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
2N7002A
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
General Features
● VDS = 60V,ID = 0.115A
RDS(ON) < 3.5Ω @ VGS=5V
RDS(ON) < 3Ω @ VGS=10V
● Lead free product is acquired
● Surface mount package
Schematic diagram
Application
●Direct logic-level interface: TTL/CMOS
●Drivers: relays, solenoids, lamps, hammers, display,
memories, transistors, etc.
●Battery operated systems
●Solid-state relays
Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
7002A
2N7002A
SOT-23
Ø180mm
8 mm
3000 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
0.115
A
IDM
0.8
A
PD
0.2
W
TJ,TSTG
-55 To 150
℃
RθJA
625
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60
68
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
-
-
1
μA
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Off Characteristics
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2N7002A
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Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1
1.7
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=5V, ID=0.05A
-
2.3
3.5
Ω
VGS=10V, ID=0.5A
-
2.1
3
Ω
VDS=10V,ID=0.2A
0.08
-
-
S
-
20
50
PF
-
10
20
PF
-
3.6
5
PF
-
10
-
nS
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=30V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=30V,ID=0.2A
-
50
-
nS
td(off)
VGS=10V,RGEN=10Ω
-
17
-
nS
-
10
-
nS
-
1.7
3
nC
-
-
1.2
V
-
-
0.115
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=10V,ID=0.115A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
VSD
IS
VGS=0V,IS=0.115A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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2N7002A
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Typical Electrical and Thermal Characteristics
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
ID- Drain Current (A)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 4 Transfer Characteristics
Rdson On-Resistance(Ω)
Rdson On-Resistance(Ω)
Figure 3 Output Characteristics
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Figure 5 Drain-Source On-Resistance
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Figure 6 Rdson vs Vgs
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2N7002A
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (mA)
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Vsd Source-Drain Voltage (V)
Qg Gate Charge (nC)
Figure 8 Source-DrainDiode Forward
ID- Drain Current (A)
Normalized On-Resistance
Figure 7 Gate Charge
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 10
Safe Operation Area
C Capacitance (pF)
Figure 9 Drain-Source On-Resistance
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
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2N7002A
r(t),Normalized Effective
Transient Thermal Impedance
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Square Wave Pluse Duration(sec)
Figure 12 Normalized Maximum Transient Thermal Impedance
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SOT-23 Package Information
Symbol
Dimensions in Millimeters
MIN.
MAX.
A
0.900
1.150
A1
0.000
0.100
A2
0.900
1.050
b
0.300
0.500
c
0.080
0.150
D
2.800
3.000
E
1.200
1.400
E1
2.250
2.550
e
e1
0.950TYP
1.800
L
2.000
0.550REF
L1
0.300
0.500
θ
0°
8°
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
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2N7002A
Attention:
■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that
■
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require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
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events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep. 2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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