Ordering number : ENA1076A 2SC4853A RF Transistor http://onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features • Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : ⏐S21e⏐2=7dB typ (f=1GHz) : NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Conditions Ratings Unit VCBO VCEO 12 V 6 V VEBO IC 1.5 V 15 mA 90 mW Junction Temperature PC Tj Storage Temperature Tstg 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7023A-009 • Package : MCP • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 2SC4853A-4-TL-E 0.2 0.15 3 Packing Type: TL Marking 0 to 0.08 1.25 2.1 0.425 2.0 LOT No. 1 2 0.65 0.9 R A N K LOT No. TL 0.3 Electrical Connection 0.3 0.425 CN 1 : Base 2 : Emitter 3 : Collector MCP 3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 80812 TKIM/D2408AB MSIM TC-00001797 No. A1076-1/8 2SC4853A Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ ICBO IEBO VCB=5V, IE=0A VEB=1V, IC=0A Gain-Bandwidth Product hFE fT VCE=1V, IC=1mA VCE=1V, IC=1mA Output Capacitance Cob 2 ⏐S21e⏐ 1 VCB=1V, f=1MHz VCE=1V, IC=1mA, f=1GHz 2 ⏐S21e⏐ 2 VCE=2V, IC=3mA, f=1GHz 10.5 NF1 VCE=1V, IC=1mA, f=1GHz 2.6 NF2 VCE=2V, IC=3mA, f=1GHz 1.9 Emitter Cutoff Current DC Current Gain Forward Transfer Gain Noise Figure Unit max 60* 1.0 μA 10 μA 270* 5 GHz 0.6 4.5 1.0 7 pF dB dB 4.5 dB dB * : The 2SC4853A is classified by 1mA hFE as follows : Rank hFE 3 60 to 120 4 90 to 180 5 135 to 270 Ordering Information Device Package Shipping memo MCP 3,000pcs./reel Pb Free 2SC4853A-4-TL-E IC -- VCE 20 hFE -- IC 1000 7 18 14 10 105μA 90μA 75μA 8 60μA 6 45μA 12 4 1 0 2 3 4 Collector-to-Emitter Voltage, VCE -- V IT14232 5 10 0.1 2 3 5 7 1.0 VC 5 V =2 E 3 1V 2 1.0 7 5 3 5 7 10 2 3 IT14233 Cob -- VCB 2 7 2 Collector Current, IC -- mA fT -- IC 10 3 2 7 2 6 VCE=2V 1V 100 15μA 5 2 2 3 IB=0μA 0 3 30μA 2 Gain-Bandwidth Product, fT -- GHz DC Current Gain, hFE 120μA 135μA 150μA Output Capacitance, Cob -- pF Collector Current, IC -- mA 5 16 f=1MHz 1.0 7 5 3 2 0.1 7 3 5 7 1.0 2 3 5 Collector Current, IC -- mA 7 2 10 ITR07582 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 ITR07583 Collector-to-Base Voltage, VCB -- V No. A1076-2/8 2SC4853A NF -- IC 10 Forward Transfer Gain, ⏐S21e⏐2 -- dB f=1GHz 6 4 V CE =1 V Noise Figure, NF -- dB 8 2 0 2 ⏐S21e⏐2 -- IC 14 2V f=1GHz 12 V =2 E VC 10 1V 8 6 4 2 0 3 5 7 2 1.0 3 5 7 2 10 Collector Current, IC -- mA ⏐S21e⏐2, NF -- V 2 5 7 2 1.0 3 Collector Current, IC -- mA CE 14 3 ITR07585 7 PC -- Ta 100 f=1GHz 5 ITR07584 90 IC=3mA Collector Dissipation, PC -- mW ⏐S21e⏐2, NF -- dB 12 10 2 ⏐S21e⏐ 1mA 8 6 4 IC=1mA NF 2 3mA 0 0 80 70 60 50 40 30 20 10 0 1 2 3 4 5 Collector-to-Emitter Voltage, VCE -- V 6 7 ITR07586 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14234 No. A1076-3/8 2SC4853A S Parameters S11e f=200MHz to 2000MHz(200MHz Step) S21e f=200MHz to 2000MHz(200MHz Step) 90° j50 120° j25 j150 150° j200 j250 j10 10 25 2.0GH z 0 --j10 50 100 150 VCE=2V IC=3mA 250 z GH 0.2 ±180° 0.2GHz --j250 --j200 --j150 V C IC = E =1V 1m A VCE=2V IC=3mA 30° V =1 V CE=1mA IC Hz 2G 0. z GH 2.0 2 4 8 6 0 --30° --150° --j100 --j25 --60° --120° --j50 --90° ITR07588 S12e f=200MHz to 2000MHz(200MHz Step) ITR07589 S22e f=200MHz to 2000MHz(200MHz Step) 90° j50 60° 120° j25 Hz 2G 0. ±180° 2.0 GH z j150 30° j200 j250 j10 V =2 A E m V C =3 IC 0.05 0.10 0.15 0.20 0 0 0.2 --j10 --30° --150° j100 0.5 20 10 2.0G Hz V =1 E C m V =1 A IC 150° 60° j100 --j25 100 VCE=2V IC=3mA z GH 2 . 0 --j250 --j200 --j150 VCE=1V IC=1mA --j100 --60° --120° --90° ITR07590 --j50 ITR07591 No. A1076-4/8 2SC4853A S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.940 0.863 0.778 0.698 0.608 0.546 0.470 0.418 0.388 0.354 ∠S11 -17.9 -33.7 -48.0 -60.5 -73.5 -84.7 -96.2 -106.4 -117.3 -127.0 ⏐S21⏐ 3.228 2.983 2.732 2.469 2.320 2.106 1.977 1.826 1.700 1.615 ∠S21 159.6 143.7 129.9 117.7 106.2 96.3 87.1 78.8 72.2 65.9 ⏐S12⏐ 0.058 0.107 0.145 0.173 0.195 0.210 0.129 0.224 0.230 0.234 ∠S12 77.1 66.6 58.1 50.9 45.4 40.9 37.6 35.3 33.8 32.9 ⏐S22⏐ 0.972 0.914 0.844 0.773 0.717 0.668 0.624 0.590 0.562 0.546 ∠S22 -12.2 -22.7 -31.7 -39.6 -46.0 -51.7 -56.5 -60.6 -64.3 -67.5 ∠S11 -30.6 -53.7 -71.7 -85.7 -99.0 -111.4 -122.6 -134.7 -148.0 -157.2 ⏐S21⏐ 7.428 6.016 4.908 4.073 3.494 3.033 2.694 2.422 2.205 2.061 ∠S21 149.3 128.5 113.6 101.9 92.7 84.4 77.4 70.9 65.9 60.8 ⏐S12⏐ 0.050 0.083 0.105 0.121 0.135 0.150 0.162 0.175 0.189 0.205 ∠S12 71.4 60.6 55.1 52.5 51.4 50.9 50.9 51.0 51.1 51.0 ⏐S22⏐ 0.916 0.778 0.672 0.597 0.548 0.514 0.492 0.475 0.461 0.456 ∠S22 -18.3 -30.2 -37.1 -41.9 -45.7 -49.2 -52.3 -55.6 -59.0 -61.8 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.839 0.672 0.536 0.431 0.360 0.310 0.265 0.242 0.228 0.217 No. A1076-5/8 2SC4853A Embossed Taping Specification 2SC4853A-4-TL-E No. A1076-6/8 2SC4853A Outline Drawing 2SC4853A-4-TL-E Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No. A1076-7/8 2SC4853A ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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