Ordering number : EN2042B 2SD1685 Bipolar Transistor http://onsemi.com 20V, 5A, Low VCE(sat), NPN Single TO-126ML Applications • Strobe, voltage regulators, relay drivers, lamp drivers Features • • • Large current capacity • Fast switching time Low saturation voltage No insulator required when mounting because the leadframe of the chip is covered with plastic Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Unit 60 V 20 V VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 6 V 5 A 8 A 1.5 W 10 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7516A-002 • Package : TO-126ML • JEITA, JEDEC : TO-126 • Minimum Packing Quantity : 200 pcs./bag 2SD1685G 2SD1685F 8.0 4.0 3.6 3.3 1.0 Marking Electrical Connection 2 11.0 D1685 3 RANK LOT No. 1.5 7.5 3.0 1.4 1.0 1 3.0 1.6 0.8 0.8 0.75 15.5 0.7 2 3 1.7 1 1 : Emitter 2 : Collector 3 : Base 2.4 4.8 TO-126ML Semiconductor Components Industries, LLC, 2013 September, 2013 90512 YKIM/21599TH (KT)/4277TA, TS No.2042-1/6 2SD1685 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time min typ max ICBO IEBO VCB=50V, IE=0A VEB=5V, IC=0A hFE1 VCE=2V, IC=500mA hFE2 VCE=2V, IC=3A fT Cob VCE=10V, IC=50mA 120 VCB=10V, f=1MHz IC=3A, IB=60mA 45 VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions 120* Unit 100 nA 100 nA 560* 95 MHz pF 220 IC=3A, IB=60mA 500 mV 1.5 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 60 V IC=1mA, RBE=∞ 20 V V(BR)EBO ton IE=10μA, IC=0A 6 tstg tf See specified Test Circuit. V 30 ns 300 ns 40 ns * : The 2SD1685 is classified by 500mA hFE as follows : Rank hFE E 120 to 200 F 160 to 320 G 280 to 560 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 5Ω 50Ω + 100μF + 470μF VBE= --5V VCC=10V IC=10IB1= --10IB2=2A Ordering Information Package Shipping 2SD1685G Device TO-126ML 200pcs./bag 2SD1685F TO-126ML 200pcs./bag IC -- VCE 5 A 20mA 3 15mA 10mA 2 5mA 1 2 3 4 Collector-to-Emitter Voltage, VCE -- V m 50 4 A 60 m A 40m 3 20mA 15mA 2 10mA 5mA IB=0mA 0 5 ITR10012 A 30mA 1 IB=0mA 0 1 IC -- VCE 30mA 4 0 Pb Free 5 Collector Current, IC -- A Collector Current, IC -- A 40m memo 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 1.0 ITR10013 No.2042-2/6 2SD1685 IC -- VBE 6 5 DC Current Gain, hFE 3 2 0 0.2 0.4 0.6 --25 ° 1 C Ta= 7 25° 5°C C Collector Current, IC -- A 4 0.8 1.0 5 3 2 100 7 5 3 2 2 3 5 7 2 100 3 5 Collector Current, IC -- mA 100 25°C Ta=75°C --25°C 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A Collector Current, IC -- A 10 7 5 3 5 7 10 ITR10018 ASO 2 ICP DC IC 3 DC 2 5 7 0.1 2 3 5 7 1.0 2 3 Cob -- VCB 5 7 10 ITR10015 f=1MHz 100 7 5 3 2 2 3 5 7 2 10 3 5 7 100 ITR10017 VBE(sat) -- IC IC / IB=50 5 3 2 1.0 Ta= --25°C 7 5 25°C 75°C 3 2 0.1 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 ITR10019 1m s 1 10 0ms 0m s op era tio op era tio 1.0 3 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 3 2 7 3 5 5 7 0.01 10 5 7 3 10 1.0 7 1000 ITR10016 IC / IB=50 7 5 2 VCE(sat) -- IC 1000 7 Collector Current, IC -- A Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 7 10 --25°C 100 10 1.2 VCB=10V 10 2 ITR10014 f T -- IC 1000 25°C Ta=75°C 3 2 Base-to-Emitter Voltage, VBE -- V 10 VCE=2V 7 5 0 hFE -- IC 1000 VCE=2V nT c= 25 °C nT a= 7 25 °C 5 3 2 0.1 7 5 Ta=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V ITR10020 No.2042-3/6 2SD1685 Bag Packing Specification 2SD1685G, 2SD1685F No.2042-4/6 2SD1685 Outline Drawing 2SD1685G, 2SD1685F Mass (g) Unit 0.97 mm * For reference No.2042-5/6 2SD1685 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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