ESJC30-05

HVGT
ESJC30-05
5kV 350mA HIGH VOLTAGE DIODE
Outline Drawings : mm
ESJC30-05 is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Cathode Mark
Lot No.
o 7.0
o 1.2
Features
High speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
20 min.
21
20 min.
DO-721
Cathode Mark
Applications
X light Power supply
Mark
Type
Laser
Microwave emission power
ESJC30
-05
ESJC30-05
Maximum Ratings and Characteristics
>>>>
Voltage doubler circuit
Absolute Maximum Ratings
Symbols
Items
Condition
ESJC30-05
Units
5.0
kV
350
mA
I FSM
15
Apeak
Junction Temperature
Tj
120
°C
Allowable Operation Case Temperature
Tc
120
°C
Storage Temperature
Tstg
-40 to +125
°C
V RRM
Repetitive Peak Renerse Voltage
IO
Average Output Current
Suege Current
Ta=25°C,Resistive Load
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
ESJC30-05
Units
Maximum Forward Voltage Drop
VF
at 25°C,IF=IF(AV)
14
V
Maximum Reverse Current
IR1
at 25°C,VR=VRRM
5.0
µA
IR2
at 100°C,VR=VRRM
50
µA
Maximum Reverse Recovery Time
Trr
at 25°C
150
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
15
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:[email protected]
2014