HVGT HV200F04 4.0kV 200mA HIGH VOLTAGE DIODE Outline Drawings : mm HV200F04 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features High speed switching High Current 25 min. High surge resisitivity for CRT discharge High reliability design High Voltage 8.0 25 min. DO-308 Cathode Mark Applications X light Power supply Type Mark Laser Voltage doubler circuit Microwave emission power HV200F04 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition HV200F04 Units 4.0 kV 200 mA I FSM 10 Apeak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -40 to +125 °C HV200F04 Units Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=25°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 13 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 2.0 uA IR2 at 100°C,V R =VRRM 15 uA Maximum Reverse Recovery Time Trr at 25°C 100 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz 15 pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014