HVGT ESJC60S10 600mA 10kV HIGH VOLTAGE DIODES Outline Drawings : mm Finds use in applications such as Monitors, Static electricity dust collectors,Laser power supplies,ect.. Cathode Mark Lot No. o 7.0 o 1.28 Features High speed switching High Current 24 min. High surge resisitivity for CRT discharge High reliability design High Voltage 21 24 min. DO-721 Cathode Mark Applications X light Power supply Type Mark Laser Voltage doubler circuit Microwave emission power HVGT ESJC60S10 ESJC60S10 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Repetitive Peak Renerse Voltage Average Output Current Symbols Condition V RRM IO Ta=25°C,Resistive Load ESJC60S10 Units 10 kV 600 mA I FSM 30 Junction Temperature Tj 120 °C Allowable Operation Case Temperature Tc 120 °C Storage Temperature Tstg -40 to +125 °C Suege Current A peak Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions ESJC60S10 Units Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 12 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 5.0 uA IR2 at 100°C,V R =VRRM 50 uA Maximum Reverse Recovery Time Trr at 25°C -- nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz -- pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2015