Preliminary Datasheet RJK03N2DPA 30V, 40A, 4.0mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0783EJ0200 Rev.2.00 Feb 12, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS Ratings 30 ±12 Unit V V ID Note1 ID(pulse) IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg 40 160 40 14 19.6 35 3.57 150 –55 to +150 A A A A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0783EJ0200 Rev.2.00 Feb 12, 2013 Page 1 of 6 RJK03N2DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — Typ — — — — 3.3 3.8 105 3350 405 250 2.1 27.2 7.6 7.8 6.0 4.4 63.3 Max — ± 0.5 1 2.5 4.0 4.8 — 4690 — — 4.2 — — — — — — Unit V A mA V m m S pF pF pF nC nC nC ns ns ns — — — 18.7 0.41 7.4 — — — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 24 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 20 A, VGS = 8.0 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 40 A VGS = 8 V, ID = 20 A VDD 10 V RL = 0.5 Rg = 4.7 IF = 2 A, VGS = 0 Note4 IF =40 A, VGS = 0 diF/ dt = 500 A/ s Notes: 4. Pulse test R07DS0783EJ0200 Rev.2.00 Feb 12, 2013 Page 2 of 6 RJK03N2DPA Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 30 20 PW = 10 ms 1 Operation in this area is limited by RDS(on) e Op ra tio 50 100 150 0.1 0.1 200 n Tc = 25 °C 1 shot Pulse 0 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 4.5 V 8V 2.5 V Pulse Test 40 Drain Current ID (A) Drain Current ID (A) 10 DC 10 100 s m Drain Current ID (A) 1000 1 Channel Dissipation Pch (W) 40 2.4 V 30 2.3 V 20 10 40 VDS = 5 V Pulse Test 30 20 10 VGS = 2.2 V 25°C Tc = 75°C –25°C Drain to Source Saturation Voltage VDS(on) (mV) 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current 100 200 Pulse Test Pulse Test 150 30 100 10 ID = 20 A 50 VGS = 4.5 V 3 10 A 8V 5A 0 3 6 9 12 Gate to Source Voltage VGS (V) R07DS0783EJ0200 Rev.2.00 Feb 12, 2013 1 1 3 10 30 100 300 1000 Drain Current ID (A) Page 3 of 6 RJK03N2DPA Preliminary Static Drain to Source On State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 10000 10 Pulse Test 3000 Capacitance C (pF) 8 ID = 5 A, 10 A, 20 A 6 VGS = 4.5 V 4 8V 5 A, 10 A, 20 A 2 1000 0 25 50 75 Crss 100 Case Temperature 10 0 100 125 150 Tc (°C) 9 VDS 20 6 3 VDD = 25 V 10 V 0 0 20 40 60 80 0 100 Reverse Drain Current IDR (A) 12 VDD = 25 V 10 V 10 20 30 50 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) VGS 40 30 10 Reverse Drain Current vs. Source to Drain Voltage 15 ID = 40 A VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 Coss 300 30 0 –25 Ciss Pulse Test 10 V 40 5V 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate Charge Qg (nc) Maximum Avalanche Energy vs. Channel Temperature Derating Avalanche Energy EAS (mJ) 25 20 15 10 5 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0783EJ0200 Rev.2.00 Feb 12, 2013 Page 4 of 6 RJK03N2DPA Preliminary Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 PDM 2 0.0 1 lse 0.0 pu t ho 1s 0.03 D= PW T PW T 0.01 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAS = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 10 V 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 8V 10% 10% VDS = 10 V 90% td(on) R07DS0783EJ0200 Rev.2.00 Feb 12, 2013 10% tr 90% td(off) tf Page 5 of 6 RJK03N2DPA Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PWSN0008DE-A Previous Code WPAK(3F)V MASS[Typ.] 0.075g 0.85Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK(3F) 4.23Typ 1.27Typ +0.1 -0.2 1.27Typ 0.5 ± 0.15 5.9 +0.1 -0.3 6.1 0.05Max 0Min Stand-off 0.545Typ 3.6 ± 0.2 3.92 ± 0.22 0.21Typ 0.42 ± 0.08 4.90 ± 0.1 (Sn plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Orderable Part Number RJK03N2DPA-00-J5A Quantity 3000 pcs Shipping Container Taping Note: The symbol of 2nd "-" is occasionally presented as "#". R07DS0783EJ0200 Rev.2.00 Feb 12, 2013 Page 6 of 6 Notice 1. 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