HSC119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0188-0100Z (Previous: ADE-208-615) Rev.1.00 Mar.22.2004 Features • Low capacitance. (C = 2.0 pF max) • Short reverse recovery time. (trr = 3.0 ns max) • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HSC119 H1 UFP Pin Arrangement Cathode mark Mark 1 H1 2 1. Cathode 2. Anode Rev.1.00, Mar.22.2004, page 1 of 4 HSC119 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current VRM VR IFM IFSM *1 85 80 300 4 V V mA A Average rectified current Junction temperature Storage temperature IO Tj Tstg 100 125 –55 to +125 mA °C °C Note: 1. Within 1µs forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 Reverse current Capacitance Reverse recovery time*1 — — — — — — — — — — 0.8 1.2 0.1 2.0 3.0 V VF2 IR C trr IF = 10 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50 Ω Note: µA pF ns 1. Reverse recovery time test circuit DC Supply 0.1µF 3kΩ Sampling Rin = 50Ω Oscilloscope Ro = 50Ω Pulse Generator Trigger Rev.1.00, Mar.22.2004, page 2 of 4 HSC119 Main Characteristics 10–4 1.0 Reverse current IR (A) 10 –1 10–2 10–3 Ta = 75° C Ta = 25°C Ta = -25°C Forward current IF (A) 10–5 0 0.2 0.4 0.6 0.8 Ta=50°C 10 –7 Ta=25°C 10–8 10–9 10–10 1.0 1.2 10–11 0 20 40 60 80 100 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) Ta=75°C 10–6 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.1.00, Mar.22.2004, page 3 of 4 HSC119 Package Dimensions As of January, 2003 1.2 ± 0.10 0.13 ± 0.05 1.6 ± 0.10 0.6 ± 0.10 0.3 ± 0.05 0.8 ± 0.10 Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.1.00, Mar.22.2004, page 4 of 4 UFP — Conforms 0.0016 g Sales Strategic Planning Div. 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