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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5336 25 pcs (Non reel) • Magazine case 2SC5336-T1 1 kpcs/reel • 12 mm wide embossed taping • Collector face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V IC 100 mA 1.2 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C 2 Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate (Copper plating) Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P10938EJ2V0DS00 (2nd edition) Date Published August 2001 NS CP(K) Printed in Japan The mark • shows major revised points. © 1996, 2001 2SC5336 ELECTRICAL CHARACTERISTICS (TA = +25°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA – – 1.0 µA Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA – – 1.0 µA VCE = 10 V, IC = 20 mA 50 120 250 – VCE = 10 V, IC = 20 mA – 6.5 – GHz S21e VCE = 10 V, IC = 20 mA, f = 1 GHz – 12 – dB Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.5 0.8 pF hFE DC Current Gain Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank RH RF RE Marking RH RF RE hFE Value 50 to 100 80 to 160 125 to 250 Data Sheet P10938EJ2V0DS 2SC5336 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2.0 1.0 0 f = 1 MHz 3.0 2.0 1.0 0.5 0.3 1 3 5 10 20 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 50 20 1 5 10 VCE = 10 V f = 1 GHz 5 3 2 1 0.5 0.3 1 50 3 5 10 20 30 50 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. FREQUENCY INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 10 V IC = 20 mA |S21e|2 20 MAG 10 0.2 30 10 100 0 5.0 150 VCE = 10 V 10 0.5 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 100 Gain Bandwidth Product fT (GHz) DC Current Gain hFE 200 50 Reverse Transfer Capacitance Cre (pF) Mounted on Ceramic Substrate (16 cm2 × 0.7 mm (t) ) 0.4 15 Insertion Power Gain |S21e|2 (dB) Total Power Dissipation Ptot (W) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.6 0.8 1.0 1.4 2.0 VCE = 10 V f = 1 GHz 10 5 0 1 3 5 10 20 30 50 100 Collector Current IC (mA) Frequency f (GHz) Data Sheet P10938EJ2V0DS 3 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V f = 1 GHz Noise Figure NF (dB) 6 5 4 3 2 1 0 0.5 1 5 10 50 3rd Order Intermodulation Distortion IM3 (dB) 2nd Order Intermodulation Distortion IM2 (dB) 2SC5336 IM3, IM2 vs. COLLECTOR CURRENT –100 VCE = 10 V, Vin = 100 dBµV/50 Ω –90 Rg = Re = 50 Ω IM2 : f = 90 + 100 MHz IM3 : f = 2 × 200 – 190 MHz –80 –60 IM2 –50 –40 –30 Collector Current IC (mA) 20 30 40 50 60 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 IM3 –70 Data Sheet P10938EJ2V0DS 70 2SC5336 S-PARAMETERS VCE = 10 V, IC = 20 mA Frequency S11 S21 S12 S22 (GHz) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.519 0.413 0.413 0.345 0.331 0.320 0.302 0.296 0.283 0.285 0.265 0.260 0.263 0.242 0.252 0.253 0.253 0.257 0.262 0.273 −74.5 −112.9 −133.4 −145.7 −153.8 −159.6 −166.8 −169.2 −173.2 −179.8 175.2 174.1 166.0 163.0 160.1 154.0 149.9 147.2 143.0 141.5 30.931 18.965 13.324 10.164 8.177 6.834 5.832 5.107 4.600 4.200 3.930 3.979 3.741 3.115 2.844 2.595 2.420 2.305 2.171 2.049 131.9 111.5 101.9 95.9 91.8 89.1 86.7 84.3 83.1 82.3 80.8 78.5 68.6 66.6 65.7 64.1 63.7 63.0 62.6 61.2 0.017 0.031 0.038 0.045 0.055 0.064 0.074 0.077 0.088 0.097 0.100 0.109 0.114 0.119 0.133 0.140 0.158 0.165 0.172 0.177 60.6 61.9 65.1 69.8 71.8 70.9 73.9 74.4 71.2 74.5 76.3 75.9 76.8 78.3 82.0 81.0 80.9 82.2 80.5 78.3 0.752 0.570 0.465 0.428 0.436 0.438 0.434 0.429 0.436 0.455 0.467 0.529 0.551 0.509 0.510 0.496 0.515 0.518 0.536 0.524 −30.2 −39.7 −39.8 −40.1 −41.1 −43.5 −47.5 −47.8 −46.5 −47.8 −46.8 −47.4 −55.8 −55.8 −58.5 −55.2 −54.8 −56.5 −58.6 −61.5 VCE = 10 V, IC = 40 mA Frequency S11 S21 S12 S22 (GHz) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.378 0.317 0.308 0.299 0.297 0.288 0.274 0.261 0.255 0.260 0.243 0.239 0.245 0.216 0.235 0.243 0.233 0.242 0.249 0.260 −97.1 −131.8 −150.1 −158.7 −165.5 −169.2 −173.7 −177.3 178.9 173.0 169.4 169.3 160.3 157.8 155.3 148.8 146.0 144.6 141.9 140.4 32.908 18.819 12.955 9.775 7.899 6.586 5.607 4.879 4.435 4.024 3.801 3.827 3.587 2.980 2.726 2.537 2.348 2.200 2.073 1.986 123.3 106.0 97.5 93.1 89.8 87.6 85.2 83.5 82.2 81.4 80.6 78.2 68.4 66.0 66.1 64.0 64.2 63.5 63.3 61.7 0.017 0.027 0.035 0.042 0.052 0.061 0.071 0.081 0.092 0.095 0.098 0.109 0.117 0.125 0.137 0.143 0.159 0.163 0.171 0.184 71.1 71.2 71.8 78.1 78.5 79.1 77.4 76.4 76.5 77.6 77.1 78.3 78.0 80.3 86.5 80.6 81.2 80.4 81.7 77.5 0.665 0.487 0.398 0.393 0.399 0.407 0.400 0.415 0.399 0.440 0.441 0.494 0.517 0.486 0.500 0.474 0.496 0.491 0.534 0.535 −34.7 −38.7 −38.5 −36.9 −37.6 −39.9 −44.6 −47.4 −46.2 −44.3 −45.2 −46.2 −55.4 −54.5 −59.0 −53.7 −56.8 −53.6 −58.0 −61.3 Data Sheet P10938EJ2V0DS 5 2SC5336 PACKAGE DIMENSIONS 4-PIN POWER MINIMOLD (UNIT: mm) 4.5±0.1 2.1 1.6 0.8 0.85 E B 2.45±0.1 C E 0.1 0.8 MIN. 1.55 3.95±0.25 0.3 1.5±0.1 0.46 ±0.06 0.42±0.06 0.25±0.02 0.42±0.06 1.5 3.0 PIN CONNECTIONS E : Emitter C: Collector B : Base 6 Data Sheet P10938EJ2V0DS 2SC5336 [MEMO] Data Sheet P10938EJ2V0DS 7 2SC5336 • The information in this document is current as of August, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4