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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation • 4-pin super minimold (18) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5015 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5015-T1 3 kpcs/reel • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V IC 30 mA Ptot 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Collector Current Total Power Dissipation Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10403EJ01V0DS (1st edition) (Previous No. P10394EJ2V0DS00) Date Published June 2003 CP(K) Printed in Japan The mark • shows major revised points. NEC Compound Semiconductor Devices 1993, 2003 2SC5015 ELECTRICAL CHARACTERISTICS (TA = +25°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 0.1 µA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 0.1 µA VCE = 3 V, IC = 10 mA 75 − 150 − VCE = 3 V, IC = 10 mA, f = 2 GHz − 12 − GHz S21e VCE = 3 V, IC = 10 mA, f = 2 GHz 9 11 − dB NF VCE = 3 V, IC = 3 mA, f = 2 GHz − 1.5 2.5 dB VCB = 3 V, IE = 0 mA, f = 1 MHz − 0.3 0.5 pF hFE DC Current Gain Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Noise Figure Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank KB Marking T83 hFE Value 75 to 150 Data Sheet PU10403EJ01V0DS 2SC5015 TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 200 150 100 50 0 75 100 125 150 1 0.5 0.2 0.1 1 2 5 10 20 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 Collector Current IC (mA) 10 1 0.1 0.01 0.001 100 f = 1 MHz Ambient Temperature TA (˚C) VCE = 1 V 0.0001 0.4 Collector Current IC (mA) 50 0.5 0.6 0.7 0.8 0.9 1.0 VCE = 2 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.9 0.8 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 VCE = 3 V 10 Collector Current IC (mA) Collector Current IC (mA) 100 25 2 1 0.1 0.01 0.001 25 200 µ A 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 40 µ A 20 15 10 5 IB = 20 µ A 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 4 6 8 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) Data Sheet PU10403EJ01V0DS 3 2SC5015 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 100 10 0.1 1 10 10 0.1 100 1 DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 Gain Bandwidth Product fT (GHz) 100 10 0.1 1 10 VCE = 3 V f = 2 GHz 12 10 8 6 4 2 0 1 100 2 Collector Current IC (mA) 5 10 20 50 Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. FREQUENCY INSERTION POWER GAIN vs. COLLECTOR CURRENT 12 50 VCE = 3 V IC = 10 mA Insertion Power Gain |S21e|2 (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 100 Collector Current IC (mA) VCE = 3 V 40 30 MAG 20 |S21e|2 10 0 0.1 0.2 0.5 1 2 VCE = 3 V f = 2 GHz 10 5 8 6 4 2 0 1 2 5 10 20 Collector Current IC (mA) Frequency f (GHz) 4 10 Collector Current IC (mA) 1 000 DC Current Gain hFE 100 Data Sheet PU10403EJ01V0DS 50 2SC5015 NOISE FIGURE vs. COLLECTOR CURRENT 5 Noise Figure NF (dB) VCE = 3 V f = 2 GHz 4 3 2 1 0 1 2 5 10 20 50 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ Data Sheet PU10403EJ01V0DS 5 2SC5015 PACKAGE DIMENSIONS 4-PIN SUPER MINIMOLD (18) (UNIT: mm) 2.1±0.2 0.65 0.3+0.1 –0.05 3 2 0.65 1.30 0.65 0.15+0.1 –0.05 4 0.3+0.1 –0.05 1 0 to 0.1 0.3 0.9±0.1 0.4+0.1 –0.05 0.60 1.25 T83 2.0±0.2 0.3+0.1 –0.05 1.25±0.1 PIN CONNECTIONS 1. 2. 3. 4. 6 Collector Emitter Base Emitter Data Sheet PU10403EJ01V0DS 2SC5015 • The information in this document is current as of June, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PU10403EJ01V0DS 7 2SC5015 For further information, please contact NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 E-mail: [email protected] TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0302-1