Preliminary Datasheet RJK5032DPD 500V - 3A - MOS FET High Speed Power Switching R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 Features Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) D 4 1. 2. 3. 4. G 12 3 Gate Drain Source Drain S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID (pulse) IDR Note1 IDR (pulse) Note2 IAP Note2 EAR Pch Note 3 ch-c Tch Tstg Value 500 30 3 6 3 6 3 0.5 40.3 3.1 150 –55 to +150 Unit V V A A A A A mJ W C/W C C Notes: 1. Pulse width limited by safe operating area. 2. STch = 25C, Tch 150C 3. Value at Tc = 25C R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 Page 1 of 6 RJK5032DPD Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 500 — — 3.5 — — — — — — — — — — — — — Typ — — — — 2.1 280 33 3.5 11 12 23 20 9.2 1.8 4.8 0.9 200 Max — 1 0.1 4.5 2.8 — — — — — — — — — — 1.5 — Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test Conditions ID = 1 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.5 A, VGS = 10 V Note 4 VDS = 25 V VGS = 0 f = 1 MHz ID = 1.5 A VGS = 10 V RL = 167 Rg = 10 VDD = 400 V VGS = 10 V ID = 3 A IF = 3 A, VGS = 0 Note 4 IF = 3 A, VGS = 0 diF/dt = 100 A/s 4. Pulse test R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 Page 2 of 6 RJK5032DPD Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 5 10 μs = Drain Current 0 μs 0.1 Operation in this area is limited by RDS(on) 0.01 0.001 0.1 1 1 Drain to Source on State Resistance RDS(on) (Ω) 1 25°C −25°C 0.01 0.001 2 4 6 20 VDS (V) VGS = 10 V Ta = 25°C Pulse Test 0.1 8 1 3 Drain Current 10 ID (A) Body-Drain Diode Reverse Recovery Time (Typical) 8 1000 VGS = 10 V Ta = 25°C Pulse Test ID = 3 A 4 2A 1A 2 0 −25 16 1 Static Drain to Source on State Resistance vs. Temperature (Typical) 6 12 10 VGS (V) Gate to Source Voltage 8 Static Drain to Source on State Resistance vs. Drain Current (Typical) VDS = 10 V Pulse Test Tc = 75°C 4 Drain to Source Voltage 0 25 50 75 Case Temperature R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 100 125 150 Tc (°C) Reverse Recovery Time trr (ns) ID (A) 5.2 V VDS (V) 10 Drain Current 2 0 Typical Transfer Characteristics Static Drain to Source on State Resistance RDS(on) (Ω) 5.6 V 0 1000 100 10 Drain to Source Voltage 0 10 V, 15 V VGS = 4.8 V Tc = 25°C 1 shot 0.1 4 6V 7V 3 10 1 Drain Current Ta = 25°C Pulse Test ID (A) 10 PW ID (A) 100 100 di/dt = 100 A/μs VGS = 0, Ta = 25°C 10 0.1 1 Reverse Drain Current 10 IDR (A) Page 3 of 6 RJK5032DPD Preliminary Typical Capacitance vs. Drain to Source Voltage 100 Coss 10 Crss 1 0.1 0 VGS = 0 f = 1 MHz Ta = 25°C 50 100 150 Drain to Source Voltage 200 250 800 400 12 200 2 1 0 0 0.4 0.8 Source to Drain Voltage R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 1.2 1.6 VSD (V) 4 6 8 10 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) Gate to Source Cutoff Voltage VGS(off) (V) IDR (A) Reverse Drain Current 2 4 0 0 0 8 3 8 VDD = 400 V 200 V 100 V Gate Charge 6 4 VDD = 100 V 200 V 400 V VDS Reverse Drain Current vs. Source to Drain Voltage (Typical) 5 VGS 600 VDS (V) VGS = 0 Ta = 25°C Pulse Test 16 ID = 3 A Ta = 25°C Gate to Source Voltage Capacitance C (pF) Ciss Drain to Source Voltage VDS (V) 1000 VGS (V) Dynamic Input Characteristics (Typical) VDS = 10 V 6 ID = 10 mA 4 1 mA 0.1 mA 2 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK5032DPD Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.1°C/W, Tc = 25°C 0.1 0.1 0.05 2 0.0 PDM 1 0.0 t pu o h 1s 0.01 10 μ D= lse PW T PW T 100 μ 1m 10 m Pulse Width 100 m 1 10 100 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 250 V 90% td(on) R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 tr 90% td(off) tf Page 5 of 6 RJK5032DPD Preliminary Package Dimensions Previous Code TMP3 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 0.76 0.1 ± 0.1 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Ordering Information Orderable Part Number RJK5032DPD-00#J2 R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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