RKD703KL Silicon Schottky Barrier Diode for high Speed Switching REJ03G1756-0200 Rev.2.00 Oct 20, 2009 Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • We can support the lineup of environmental friendly halogen free type on your demand. • Extremely small Flat Lead Package (EFP) is suitable for compact and high-density surface mount design. Ordering Information Part No Laser Mark Package Name Package Code RKD703KL R N EFP PXSF0002ZA-A Pin Arrangement 1 REJ03G1756-0200 Rev.2.00 Oct 20, 2009 Page 1 of 5 N − Cathode mark Mark 2 1. Cathode 2. Anode Taping Abbreviation (Quantity) R (10,000 pcs / reel) RKD703KL Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average forward current Non-Repetitive Peak forward surge current Junction temperature Storage temperature Symbol Value 30 100 200 125 –55 to +125 VRRM IO *1 IFSM *2 Tj Tstg Unit V mA mA °C °C Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 VF2 VF3 VF4 Min — — — — Typ — — — — Max 0.25 0.30 0.35 0.60 Unit V IR1 IR2 C Rth<j-a> — — — — — — — 800 6 50 5 — μA μA pF °C/W V V V Test Condition IF = 1 mA IF = 5 mA IF = 20 mA IF = 100 mA VR =10 V VR = 30 V VR = 1 V, f = 1 MHz Polyimide board *1 Notes: 1. Polyimide board 3.0 0.3 0.5 20h×15w×0.8t Unit: mm 1.0 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use. REJ03G1756-0200 Rev.2.00 Oct 20, 2009 Page 2 of 5 RKD703KL Main Characteristics 10-1 10-2 Pulse test 10-3 Ta=75°C 10-3 Reverse current IR (A) Forward current IF (A) 10 Pulse test -2 Ta=50°C Ta=25°C 10-4 10-5 10 -6 0 0.1 0.2 0.3 0.4 0.5 0.6 10 Ta=25°C 10-6 10-8 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 10 f = 1MHz Capacitance C (pF) Ta=50°C -5 10-7 10-7 10-8 Ta=75°C 10-4 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage REJ03G1756-0200 Rev.2.00 Oct 20, 2009 Page 3 of 5 RKD703KL 0.15 0.15 0A t T t D=— T D=1/6 Ta = 25°C 0.1 Sin D=1/3 D=1/2 DC 0.05 0 0 0.05 0.1 0.15 Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0V t T D=5/6 t D=— T Tj = 125°C 0.1 D=2/3 D=1/2 sin 0.05 0 0 10 20 30 Forward current IF (A) Reverse voltage VR (V) Fig.4 Forward power dissipation vs. Forward current Fig.5 Reverse power dissipation vs. Reverse voltage Average rectified current IO (A) 0.1 D=1/2 0.08 sin(θ=180°) DC D=1/3 0.06 D=1/6 0.04 0.02 0 –25 VR = VRRM/2 Tj = 125°C Rth(j-a) = 800°C/W 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.6 Average rectified current vs. Ambient temperature REJ03G1756-0200 Rev.2.00 Oct 20, 2009 Page 4 of 5 RKD703KL Package Dimensions Package Name EFP JEITA Package Code ⎯ RENESAS Code PXSF0002ZA-A Previous Code EFP / EFPV MASS[Typ.] 0.0007g D b E HE c A φb e1 Pattern of terminal position areas REJ03G1756-0200 Rev.2.00 Oct 20, 2009 Page 5 of 5 Reference Symbol A b c D E HE φb e1 Dimension in Millimeters Min 0.44 0.25 0.08 0.55 0.75 0.95 Nom 0.47 0.30 0.13 0.60 0.80 1.00 0.40 1.00 Max 0.50 0.35 0.18 0.65 0.85 1.05 Sales Strategic Planning Div. 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