SS2509 Hall Latch - High Sensitivity Packages Features and Benefits – 3 pin SOT23 (suffix SO) – – – – – – – – 3 pin SIP (suffix UA) Functional Block Diagram Application Examples – – – – – – – VDD Voltage Regulator Rpull Wide operating voltage range from 3.5V to 24V High magnetic sensitivity – Multi-purpose CMOS technology Low current consumption Chopper-stabilized amplifier stage Output driver with internal pull-up resistor Superior temperature stability Insensitive to physical stress SOT23 3L or flat SIP 3L both RoHS Compliant packages OUT Chopper Hall Plate Automotive, Consumer and Industrial Solid-state switch Brushless DC motor commutation Speed detection Angular position detection Linear position detection Proximity detection General Description GND UA Package Pin 1 – VDD Pin 2 – GND Pin 3 – OUT The SS2509 is a bipolar Hall effect sensor IC fabricated from mixed signal CMOS technology. The device integrates a voltage regulator, Hall sensor with dynamic offset cancellation system, Schmitt trigger and an output driver with internal pull-up resistor, all in a single package. SO Package Pin 1 – VDD Pin 2 – OUT Pin 3 – GND It incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic switch points. There are many applications for this HED – Hall Electronic Device - in addition to those listed above. The design, specifications and performance have been optimized for commutation applications in 5V and 12V brushless DC motors. Thanks to its wide operating voltage range and extended choice of temperature range, it is quite suitable for use in automotive, industrial and consumer applications. The device is delivered in a Small Outline Transistor (SOT) for surface mount process or in a Plastic Single In Line (SIP 3L flat) for through- hole mount. Both 3-lead packages are RoHS compliant. 1 V3.10 Nov 1, 2013 SS2509 Hall Latch - High Sensitivity Glossary of Terms MilliTesla (mT), Gauss RoHS SOT ESD BLDC Operating Point (BOP) Release Point (BRP) Units of magnetic flux density: 1mT = 10 Gauss Restriction of Hazardous Substances Small Outline Transistor (SOT package) - also referred with the package code “SO” Electro-Static Discharge Brush-Less Direct-Current Magnetic flux density applied on the branded side of the package which turns the output driver ON (VOUT = VDSon) Magnetic flux density applied on the branded side of the package which turns the output driver OFF (VOUT = high) Unique Features Based on mixed signal CMOS technology, SS2509 is a Hall-effect device with high magnetic sensitivity. This multi-purpose latch meets most of the application requirements. The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more stable magnetic characteristics and enables faster and more precise design. The wide operating voltage from 3.5V to 24V, low current consumption and large choice of operating temperature range according to “L”, and “E” specification make this device suitable for automotive, industrial and consumer applications. Pin Definitions and Descriptions SOT Pin № SIP Pin № Name Type Function 1 2 3 VDD OUT GND Supply Output Ground Supply Voltage pin Open Drain Output pin Ground pin 1 3 2 2 V3.10 Nov 1, 2013 SS2509 Hall Latch - High Sensitivity Absolute Maximum Ratings Parameter Supply Voltage Supply Current Output Voltage Output Current Storage Temperature Range Maximum Junction Temperature Symbol VDD IDD VOUT IOUT TS TJ Value 28 50 28 50 -50 to 150 165 Units V mA V mA °C °C Operating Temperature Range Temperature Suffix “E” Temperature Suffix “L” Symbol TA TA Value -40 to 85 -40 to 150 Units °C °C Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. General Electrical Specifications DC Operating Parameters TA = 25°C, VDD= 3.5V to 24V (unless otherwise specified) Parameter Symbol Supply Voltage Supply Current Output Saturation Voltage Output Leakage Current Output Rise Time Output Fall Time Internal pull-up resistor Maximum Switching Frequency Package Thermal Resistance VDD IDD VDSon IOFF tr tf Rpu FSW RTH Test Conditions Min Operating B < BRP IOUT = 20mA, B > BOP B < BRP VOUT = 24V RL = 1kΩ, CL = 20pF RL = 1kΩ, CL = 20pF ----Single layer (1S) Jedec board 3.5 Typ Max Units 24 5 0.5 10 V mA V µA µs µs kΩ KHz °C/W 1 0.25 0.25 12 10 301 9 15 Note: The output of SS2509 will be switched after the supply voltage is over 2.2V, but the magnetic characteristics won't be normal until the supply is over 3.5V. Magnetic Specifications DC Operating Parameters VDD = 3.5 to 24V (unless otherwise specified) Package Parameter Symbol Operating Point BOP Test Conditions Min Typ Max Units 5 23 40 G -40 -23 -5 G Ta=25°C UA Release Point BRP Hysteresis BHYST Operating Point BOP Vdd=5V DC 45 G -40 -23 -5 G 5 23 40 G Ta=25°C SO Release Point Hysteresis BRP Vdd=5V DC BHYST 45 3 G V3.10 Nov 1, 2013 SS2509 Hall Latch - High Sensitivity Output Behavior versus Magnetic Pole DC Operating Parameters TA = -40°C to 150°C, VDD = 3.5 to 24V (unless otherwise specified) Test Conditions (UA) Test Conditions (SO) OUT B < BRP B > BRP High B > BOP B < BOP Low The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be turned on(drops low) in the presence of a sufficiently strong North pole magnetic field applied to the marked face and turned off(hoists high) in the presence of a sufficiently strong South pole magnetic field. Detailed General Description The SS2509 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to operate properly. The OUT pin of these devices switches low (turns on) when a magnetic field perpendicular to the Hall sensor exceeds the operate point threshold, BOP. After turn-on, the output voltage is VDSon. Note that the device latches, that is, a south pole of sufficient strength towards the branded surface of the device turns the device on. The device remains on if the south pole is removed (B→0). This latching property defines the device as a magnetic memory. When the magnetic field is reduced below the release point, BRP, the OUT pin turns off (goes high). The difference in the magnetic operating and release points is the hysteresis, BHYST, of the device. This built-in hysteresis prevents output oscillation near the switching point, and allows clean switching of the output even in the presence of external mechanical vibration and electrical noise. The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with equivalent strength and opposite direction drive the output high and low. Powering-on the device in the hysteresis region (less than BOP and higher than BRP) allows an indeterminate output Output level Output level OUT = High OUT = High BHYST BHYST OUT = Low OUT = Low BRP -23Gs typ 0mT BOP 23Gs typ BRP -23Gs typ Flux density UA package - Latch characteristic 0mT BOP 23Gs typ Flux density SO package - Latch characteristic 4 V3.10 Nov 1, 2013 SS2509 Hall Latch - High Sensitivity state. The correct state is attained after the first excursion beyond BOP or BRP. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on in the presence of a sufficiently strong North pole magnetic field applied to the marked face. Application Information It is strongly recommended that an external bypass capacitor be connected (in close proximity to the Hall sensor) between the supply (VDD Pin) and ground (GND Pin) of the device to reduce both external noise and noise generated by the chopper stabilization technique. As is shown in the two figures in next page, a 0.1μF capacitor is typical. For reverse voltage protection, it is recommended to connect a resistor or a diode in series with the VDD pin. When using a resistor, three points are important: - the resistor has to limit the reverse current to 50mA maximum (VCC / R1 ≤ 50mA) - the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1*IDD) - the resistor has to withstand the power dissipated in reverse voltage condition (PD = VCC2/R1) When using a diode, a reverse current cannot flow and the voltage drop is almost constant (≈0.7V). Therefore, a 100Ω/0.25W resistor for 5V application and a diode for higher supply voltage are recommended. Both solutions provide the required reverse voltage protection. When a weak power supply is used or when the device is intended to be used in noisy environment, it is recommended that the second following figure is used. The low-pass filter formed by R1 and C1 and the Zener diode Z1 bypass the disturbances or voltage spikes occurring on the device supply voltage VDD. The diode D1 provides additional reverse voltage protection. Automotive and Severe Environment Protection Circuit Typical Three-Wire Application Circuit R1:100 C1 VDD R2 D1 OUT SS2509 Z1 C1 VDD SS2509 R2 OUT C2 C2 GND GND The SS2509 have been optimized for commutation applications in 5V and 12V brushless DC motors. The follow figure is the typical application circuit for 3 phase brushless DC motors. 5 V3.10 Nov 1, 2013 SS2509 Hall Latch - High Sensitivity Standard information regarding manufacturability of Hall IC with different soldering processes Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: Reflow Soldering SMD’s (Surface Mount Devices) • IPC/JEDEC J-STD-020 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (classification reflow profiles according to table 5-2) • EIA/JEDEC JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles according to table 2) Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices) • EN60749-20 Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat • EIA/JEDEC JESD22-B106 and EN60749-15 Resistance to soldering temperature for through-hole mounted devices Iron Soldering THD’s (Through Hole Devices) • EN60749-15 Resistance to soldering temperature for through-hole mounted devices Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices) • EIA/JEDEC JESD22-B102 and EN60749-21 Solderability ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. 6 V3.10 Nov 1, 2013 SS2509 Hall Latch - High Sensitivity Package Information 2.13 1.87 0.75 ± 0.05 1.52 ± 0.1 Package UA, 3-Pin SIP: 3° ± 1° 1.00 1.20 45° ± 1° 4.0 ± 0.01 1 2 3 3.0 ± 0.01 Sensor Location Active Area Depth: 0.84(Nom) 3° ± 1° 6° ± 1° 3° ± 1° 6° ± 1° 1 2 0.05 ± 0.05 3 1.6.± 0.1 0.44± 0.01 0.38 ± 0.01 14 .5 ± 1 0.39± 0.01 Notes: 1). Controlling dimension : mm ; 2). Leads must be free of flash and plating voids ; 3). Do not bend leads within 1 mm of lead to package interface ; 4). PINOUT: Pin 1 VDD Pin 2 GND Pin 3 Output 1.27 2.54 7 V3.10 Nov 1, 2013 SS2509 Hall Latch - High Sensitivity Package SO, 3-Pin SOT-23: Notes 1). PINOUT: Top Pin 1 VDD Pin 2 Output Pin 3 GND 2). All dimensions are in millimeters; 3 2.60 1.50 3.00 1.80 1 2 1.70 2.10 Side Vie End 2.70 3.10 0.10 0.25 1.00 1.30 0.70 0.90 0.20 Min 0.00 0.10 0.35 0.50 SOT-23 Package Hall Location: Bottom View of SOT-23 Package 3 Chip 0.56 0.66 0.95 2 1 1.50 Ordering Information Part No. Pb-free Temperature Code Package Code Packing SS2509ESOT YES -40°C to 85°C SOT-23 7-in. reel, 3000 pieces/reel SS2509EUA YES -40°C to 85°C TO-92 Bulk, 1000 pieces/bag SS2509KSOT YES -40°C to 125°C SOT-23 7-in. reel, 3000 pieces/reel SS2509KUA YES -40°C to 125°C TO-92 Bulk, 1000 pieces/bag SS2509LSOT YES -40°C to 150°C SOT-23 7-in. reel, 3000 pieces/reel SS2509LUA YES -40°C to 150°C TO-92 Bulk, 1000 pieces/bag 8 V3.10 Nov 1, 2013