Preliminary Datasheet BCR1AM-14A R07DS1076EJ0100 Rev.1.00 May 30, 2013 700V-1A-Triac Low Power Use Features • • • • • • Planar Type IT (RMS) : 1 A VDRM :700 V IFGTI : 5 mA IRGTI, IRGTIII : 5 mA or 3mA(IGT:item1) IFGT III : 10 mA Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92*) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Maximum Ratings Parameter Voltage class 14 700 840 Symbol Repetitive peak off-state voltageNote1 Non- repetitive peak off-state voltageNote1 Notes: 1. Gate open. VDRM VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 1.0 Unit A Surge on-state current ITSM 10 A I2t 0.41 A2 s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 0.5 – 40 to +125 – 40 to +125 0.23 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass R07DS1076EJ0100 Rev.1.00 May 30, 2013 Unit V V Conditions Commercial frequency, sine full wave Note3 360° conduction, , Tc= 56°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Page 1 of 3 BCR1AM-14A Preliminary Electrical Characteristics Parameter Symbol BCR1AM-14A-1 (IGT item : 1) BCR1AM-14A Unit Test conditions Typ. — Max. 0.5 Min. — Typ. — Max. 0.5 mA Tj = 125°C VDRM applied Tc = 25°C, ITM = 1.5 A instantaneous measurement Tj = 25°C, VD = 6 V RL = 6 Ω, RG = 330 Ω Repetitive peak off-state current IDRM Min. — On-state voltage VTM — — 1.6 — — 1.6 V I II III VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 2.0 2.0 2.0 — — — — — — 2.0 2.0 2.0 V V V IV VFGTΙΙΙ — — 2.0 — — 2.0 V I II III IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 5 3 3 — — — — — — 5 5 5 mA mA mA IV IFGTΙΙΙ — — 10 — — 10 mA VGD 0.1 — — 0.1 — — Rth (j-c) (dv/dt)c — 1.0 — — 50 — — 2.0 — — 50 — Gate trigger voltageNote2 Note2 Gate trigger curent Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Tj = 25°C, VD = 6 V RL = 6 Ω, RG = 330 Ω Tj = 125°C VD = 1/2 VDRM Note3 °C/W Junction to case V/μs Tj = 125°C V Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.5 A/ms 3. Peak off-state voltage VD = 400 V R07DS1076EJ0100 Rev.1.00 May 30, 2013 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 3 BCR1AM-14A Preliminary Package Dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code T920 MASS[Typ.] 0.23g Unit: mm φ5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ0.7 Ordering Information Orderable Part Number BCR1AM-14A#B00 BCR1AM-14A-1#B00 BCR1AM-14A-A6#B00 BCR1AM-14A-A9#B00 BCR1AM-14A-TB#B00 BCR1AM-14A-1TB#B00 Note: Packing Bag Bag Bag Bag Adhesive Tape Adhesive Tape Quantity 500 pcs. 500 pcs. 500 pcs. 500 pcs. 2000 pcs. 2000 pcs. Remark Straight type Straight type, IGT item : 1 A6 Lead form A9 Lead form IGT item : 1 Please confirm the specification about the shipping in detail. R07DS1076EJ0100 Rev.1.00 May 30, 2013 Page 3 of 3 Notice 1. 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